CN1181522C - 具有改进的内部收气的热退火单晶硅片及其热处理工艺 - Google Patents

具有改进的内部收气的热退火单晶硅片及其热处理工艺 Download PDF

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Publication number
CN1181522C
CN1181522C CNB998106054A CN99810605A CN1181522C CN 1181522 C CN1181522 C CN 1181522C CN B998106054 A CNB998106054 A CN B998106054A CN 99810605 A CN99810605 A CN 99810605A CN 1181522 C CN1181522 C CN 1181522C
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wafer
oxygen
layer
concentration
heat treatment
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Expired - Fee Related
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CNB998106054A
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Chinese (zh)
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CN1321334A (zh
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�����ء�J����
罗伯特·J·福斯特
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SunEdison Inc
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SunEdison Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CNB998106054A 1998-09-02 1999-08-27 具有改进的内部收气的热退火单晶硅片及其热处理工艺 Expired - Fee Related CN1181522C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9892198P 1998-09-02 1998-09-02
US60/098,921 1998-09-02

Publications (2)

Publication Number Publication Date
CN1321334A CN1321334A (zh) 2001-11-07
CN1181522C true CN1181522C (zh) 2004-12-22

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CNB998106054A Expired - Fee Related CN1181522C (zh) 1998-09-02 1999-08-27 具有改进的内部收气的热退火单晶硅片及其热处理工艺

Country Status (8)

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US (2) US6361619B1 (cg-RX-API-DMAC7.html)
EP (1) EP1129471B1 (cg-RX-API-DMAC7.html)
JP (2) JP4405082B2 (cg-RX-API-DMAC7.html)
KR (1) KR100816696B1 (cg-RX-API-DMAC7.html)
CN (1) CN1181522C (cg-RX-API-DMAC7.html)
DE (2) DE69941196D1 (cg-RX-API-DMAC7.html)
TW (1) TW434652B (cg-RX-API-DMAC7.html)
WO (1) WO2000013209A2 (cg-RX-API-DMAC7.html)

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EP1879224A3 (en) * 2002-04-10 2008-10-29 MEMC Electronic Materials, Inc. Process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer
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KR100783440B1 (ko) * 2006-12-06 2007-12-07 주식회사 실트론 저산소 실리콘 웨이퍼의 결함 분석 방법
US20090004426A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
US20090004458A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Diffusion Control in Heavily Doped Substrates
US7977216B2 (en) 2008-09-29 2011-07-12 Magnachip Semiconductor, Ltd. Silicon wafer and fabrication method thereof
US7939432B2 (en) * 2008-12-15 2011-05-10 Macronix International Co., Ltd. Method of improving intrinsic gettering ability of wafer
JP2009224810A (ja) * 2009-07-06 2009-10-01 Sumco Corp シリコンウェーハの製造方法、シリコンウェーハ
EP2695186A1 (en) * 2011-04-06 2014-02-12 Isis Innovation Limited Heterogeneous integration of group iii-v or ii-vi materials with silicon or germanium
KR101383608B1 (ko) 2011-10-20 2014-04-10 주식회사 엘지실트론 저온 공정에서 근접 게터링 능력을 갖는 실리콘 웨이퍼 및 그 제조 방법
CN104651946B (zh) * 2015-03-19 2017-06-23 太原理工大学 基于硅氢键流密度法的硅波导表面光滑工艺
US9758317B2 (en) * 2015-07-12 2017-09-12 Eaglestone Inc. Low profile transfer conveyor for use with conveyor systems
CN107154353B (zh) * 2016-03-03 2020-01-24 上海新昇半导体科技有限公司 晶圆热处理的方法
JP7110204B2 (ja) * 2016-12-28 2022-08-01 サンエディソン・セミコンダクター・リミテッド イントリンシックゲッタリングおよびゲート酸化物完全性歩留まりを有するシリコンウエハを処理する方法
DE102017219255A1 (de) 2017-10-26 2019-05-02 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium
EP3929334A1 (de) 2020-06-23 2021-12-29 Siltronic AG Verfahren zur herstellung von halbleiterscheiben

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Also Published As

Publication number Publication date
US6361619B1 (en) 2002-03-26
JP2010004054A (ja) 2010-01-07
JP2002524844A (ja) 2002-08-06
DE69941196D1 (de) 2009-09-10
KR100816696B1 (ko) 2008-03-27
DE69928434D1 (de) 2005-12-22
EP1129471B1 (en) 2005-11-16
JP4681063B2 (ja) 2011-05-11
US20020170631A1 (en) 2002-11-21
CN1321334A (zh) 2001-11-07
US6686260B2 (en) 2004-02-03
TW434652B (en) 2001-05-16
JP4405082B2 (ja) 2010-01-27
KR20010086360A (ko) 2001-09-10
DE69928434T2 (de) 2006-07-27
WO2000013209A2 (en) 2000-03-09
EP1129471A2 (en) 2001-09-05
WO2000013209A3 (en) 2000-12-21

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