CN1153295C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1153295C
CN1153295C CNB971186790A CN97118679A CN1153295C CN 1153295 C CN1153295 C CN 1153295C CN B971186790 A CNB971186790 A CN B971186790A CN 97118679 A CN97118679 A CN 97118679A CN 1153295 C CN1153295 C CN 1153295C
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China
Prior art keywords
convention
trap
concentration
impurity layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB971186790A
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English (en)
Chinese (zh)
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CN1185658A (zh
Inventor
������ɽ����
山下朋弘
小森重树
犬石昌秀
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1185658A publication Critical patent/CN1185658A/zh
Application granted granted Critical
Publication of CN1153295C publication Critical patent/CN1153295C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/22—Subject matter not provided for in other groups of this subclass including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0191—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)
CNB971186790A 1996-08-26 1997-08-22 半导体器件及其制造方法 Expired - Fee Related CN1153295C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22393996A JP3958388B2 (ja) 1996-08-26 1996-08-26 半導体装置
JP223939/1996 1996-08-26
JP223939/96 1996-08-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNB2003101163756A Division CN1306615C (zh) 1996-08-26 1997-08-22 半导体器件及其制造方法

Publications (2)

Publication Number Publication Date
CN1185658A CN1185658A (zh) 1998-06-24
CN1153295C true CN1153295C (zh) 2004-06-09

Family

ID=16806078

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB971186790A Expired - Fee Related CN1153295C (zh) 1996-08-26 1997-08-22 半导体器件及其制造方法
CNB2003101163756A Expired - Fee Related CN1306615C (zh) 1996-08-26 1997-08-22 半导体器件及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB2003101163756A Expired - Fee Related CN1306615C (zh) 1996-08-26 1997-08-22 半导体器件及其制造方法

Country Status (6)

Country Link
US (1) US6420763B1 (enExample)
JP (1) JP3958388B2 (enExample)
KR (1) KR19980018840A (enExample)
CN (2) CN1153295C (enExample)
DE (1) DE19734512A1 (enExample)
TW (1) TW356597B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423615B1 (en) * 1999-09-22 2002-07-23 Intel Corporation Silicon wafers for CMOS and other integrated circuits
US6440805B1 (en) * 2000-02-29 2002-08-27 Mototrola, Inc. Method of forming a semiconductor device with isolation and well regions
US7145191B1 (en) * 2000-03-31 2006-12-05 National Semiconductor Corporation P-channel field-effect transistor with reduced junction capacitance
JP2003078032A (ja) 2001-09-05 2003-03-14 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2003158204A (ja) * 2001-11-22 2003-05-30 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
JP4232477B2 (ja) * 2003-02-13 2009-03-04 パナソニック株式会社 半導体集積回路の検証方法
EP1683193A1 (en) * 2003-10-22 2006-07-26 Spinnaker Semiconductor, Inc. Dynamic schottky barrier mosfet device and method of manufacture
JP2005142321A (ja) 2003-11-06 2005-06-02 Nec Electronics Corp 半導体集積回路装置およびその製造方法
EP1784869A1 (en) * 2004-07-15 2007-05-16 Spinnaker Semiconductor, Inc. Metal source power transistor and method of manufacture
US20060049464A1 (en) * 2004-09-03 2006-03-09 Rao G R Mohan Semiconductor devices with graded dopant regions
JP2006344735A (ja) * 2005-06-08 2006-12-21 Seiko Epson Corp 半導体装置
CN101326640A (zh) * 2005-10-12 2008-12-17 斯平内克半导体股份有限公司 软差错率为零的cmos器件
DE102006023876A1 (de) * 2006-05-19 2007-11-22 Carl Zeiss Smt Ag Optische Abbildungseinrichtung
US7872903B2 (en) * 2009-03-19 2011-01-18 Altera Corporation Volatile memory elements with soft error upset immunity

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442591A (en) * 1982-02-01 1984-04-17 Texas Instruments Incorporated High-voltage CMOS process
US4470191A (en) * 1982-12-09 1984-09-11 International Business Machines Corporation Process for making complementary transistors by sequential implantations using oxidation barrier masking layer
US4710477A (en) 1983-09-12 1987-12-01 Hughes Aircraft Company Method for forming latch-up immune, multiple retrograde well high density CMOS FET
US4633289A (en) 1983-09-12 1986-12-30 Hughes Aircraft Company Latch-up immune, multiple retrograde well high density CMOS FET
DE3340560A1 (de) * 1983-11-09 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Verfahren zum gleichzeitigen herstellen von schnellen kurzkanal- und spannungsfesten mos-transistoren in vlsi-schaltungen
US4764482A (en) * 1986-11-21 1988-08-16 General Electric Company Method of fabricating an integrated circuit containing bipolar and MOS transistors
JPS6410656A (en) * 1987-07-03 1989-01-13 Hitachi Ltd Complementary type semiconductor device
CN1020028C (zh) * 1987-08-18 1993-03-03 联邦德国Itt工业股份有限公司 制作cmos集成电路的注入井和岛的方法
JPH0196962A (ja) * 1987-10-08 1989-04-14 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタおよびその製造方法
JP2660056B2 (ja) 1989-09-12 1997-10-08 三菱電機株式会社 相補型ｍｏｓ半導体装置
JP2523409B2 (ja) 1990-05-02 1996-08-07 三菱電機株式会社 半導体記憶装置およびその製造方法
KR950009893B1 (ko) * 1990-06-28 1995-09-01 미쓰비시 뎅끼 가부시끼가이샤 반도체기억장치
JP2978345B2 (ja) 1992-11-26 1999-11-15 三菱電機株式会社 半導体装置の製造方法
JPH0758212A (ja) * 1993-08-19 1995-03-03 Sony Corp Ｃｍｏｓ集積回路
JP2682425B2 (ja) 1993-12-24 1997-11-26 日本電気株式会社 半導体装置の製造方法
US5393679A (en) 1994-04-05 1995-02-28 United Microelectronics Corporation Use of double charge implant to improve retrograde process PMOS punch through voltage
JPH07312423A (ja) * 1994-05-17 1995-11-28 Hitachi Ltd Ｍｉｓ型半導体装置
US5654213A (en) * 1995-10-03 1997-08-05 Integrated Device Technology, Inc. Method for fabricating a CMOS device
US5767556A (en) * 1996-02-21 1998-06-16 Nec Corporation Field effect transistor

Also Published As

Publication number Publication date
US20020020888A1 (en) 2002-02-21
CN1185658A (zh) 1998-06-24
CN1501504A (zh) 2004-06-02
JPH1070250A (ja) 1998-03-10
KR19980018840A (ko) 1998-06-05
CN1306615C (zh) 2007-03-21
US6420763B1 (en) 2002-07-16
TW356597B (en) 1999-04-21
JP3958388B2 (ja) 2007-08-15
DE19734512A1 (de) 1998-03-05

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Granted publication date: 20040609

Termination date: 20100822