KR19980018840A - 반도체 장치 및 그 제조 방법 (Semiconductor Device and Method of Manufacturing Thereof) - Google Patents

반도체 장치 및 그 제조 방법 (Semiconductor Device and Method of Manufacturing Thereof) Download PDF

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Publication number
KR19980018840A
KR19980018840A KR1019970039793A KR19970039793A KR19980018840A KR 19980018840 A KR19980018840 A KR 19980018840A KR 1019970039793 A KR1019970039793 A KR 1019970039793A KR 19970039793 A KR19970039793 A KR 19970039793A KR 19980018840 A KR19980018840 A KR 19980018840A
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KR
South Korea
Prior art keywords
laid
well
semiconductor substrate
impurity
impurity layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019970039793A
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English (en)
Korean (ko)
Inventor
도모히로 야마시따
시게끼 고모리
모사히데 이누이시
Original Assignee
기따오까 다까시
미쯔비시 덴기 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 기따오까 다까시, 미쯔비시 덴기 가부시끼가이샤 filed Critical 기따오까 다까시
Publication of KR19980018840A publication Critical patent/KR19980018840A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/22—Subject matter not provided for in other groups of this subclass including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0191—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1019970039793A 1996-08-26 1997-08-21 반도체 장치 및 그 제조 방법 (Semiconductor Device and Method of Manufacturing Thereof) Withdrawn KR19980018840A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP22393996A JP3958388B2 (ja) 1996-08-26 1996-08-26 半導体装置
JP96-223939 1996-08-26

Publications (1)

Publication Number Publication Date
KR19980018840A true KR19980018840A (ko) 1998-06-05

Family

ID=16806078

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970039793A Withdrawn KR19980018840A (ko) 1996-08-26 1997-08-21 반도체 장치 및 그 제조 방법 (Semiconductor Device and Method of Manufacturing Thereof)

Country Status (6)

Country Link
US (1) US6420763B1 (enExample)
JP (1) JP3958388B2 (enExample)
KR (1) KR19980018840A (enExample)
CN (2) CN1306615C (enExample)
DE (1) DE19734512A1 (enExample)
TW (1) TW356597B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100479398B1 (ko) * 2001-11-22 2005-03-30 미쓰비시덴키 가부시키가이샤 반도체 기억 장치

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* Cited by examiner, † Cited by third party
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US6423615B1 (en) * 1999-09-22 2002-07-23 Intel Corporation Silicon wafers for CMOS and other integrated circuits
US6440805B1 (en) * 2000-02-29 2002-08-27 Mototrola, Inc. Method of forming a semiconductor device with isolation and well regions
US7145191B1 (en) * 2000-03-31 2006-12-05 National Semiconductor Corporation P-channel field-effect transistor with reduced junction capacitance
JP2003078032A (ja) 2001-09-05 2003-03-14 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4232477B2 (ja) * 2003-02-13 2009-03-04 パナソニック株式会社 半導体集積回路の検証方法
EP1683193A1 (en) * 2003-10-22 2006-07-26 Spinnaker Semiconductor, Inc. Dynamic schottky barrier mosfet device and method of manufacture
JP2005142321A (ja) 2003-11-06 2005-06-02 Nec Electronics Corp 半導体集積回路装置およびその製造方法
EP1784869A1 (en) * 2004-07-15 2007-05-16 Spinnaker Semiconductor, Inc. Metal source power transistor and method of manufacture
US20060049464A1 (en) * 2004-09-03 2006-03-09 Rao G R Mohan Semiconductor devices with graded dopant regions
JP2006344735A (ja) * 2005-06-08 2006-12-21 Seiko Epson Corp 半導体装置
US7821075B2 (en) * 2005-10-12 2010-10-26 Avolare 2, Llc CMOS device with zero soft error rate
DE102006023876A1 (de) * 2006-05-19 2007-11-22 Carl Zeiss Smt Ag Optische Abbildungseinrichtung
US7872903B2 (en) 2009-03-19 2011-01-18 Altera Corporation Volatile memory elements with soft error upset immunity

Family Cites Families (19)

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US4442591A (en) * 1982-02-01 1984-04-17 Texas Instruments Incorporated High-voltage CMOS process
US4470191A (en) * 1982-12-09 1984-09-11 International Business Machines Corporation Process for making complementary transistors by sequential implantations using oxidation barrier masking layer
US4633289A (en) 1983-09-12 1986-12-30 Hughes Aircraft Company Latch-up immune, multiple retrograde well high density CMOS FET
US4710477A (en) 1983-09-12 1987-12-01 Hughes Aircraft Company Method for forming latch-up immune, multiple retrograde well high density CMOS FET
DE3340560A1 (de) * 1983-11-09 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Verfahren zum gleichzeitigen herstellen von schnellen kurzkanal- und spannungsfesten mos-transistoren in vlsi-schaltungen
US4764482A (en) * 1986-11-21 1988-08-16 General Electric Company Method of fabricating an integrated circuit containing bipolar and MOS transistors
JPS6410656A (en) * 1987-07-03 1989-01-13 Hitachi Ltd Complementary type semiconductor device
CN1020028C (zh) * 1987-08-18 1993-03-03 联邦德国Itt工业股份有限公司 制作cmos集成电路的注入井和岛的方法
JPH0196962A (ja) * 1987-10-08 1989-04-14 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタおよびその製造方法
JP2660056B2 (ja) 1989-09-12 1997-10-08 三菱電機株式会社 相補型ｍｏｓ半導体装置
JP2523409B2 (ja) 1990-05-02 1996-08-07 三菱電機株式会社 半導体記憶装置およびその製造方法
KR950009893B1 (ko) * 1990-06-28 1995-09-01 미쓰비시 뎅끼 가부시끼가이샤 반도체기억장치
JP2978345B2 (ja) 1992-11-26 1999-11-15 三菱電機株式会社 半導体装置の製造方法
JPH0758212A (ja) * 1993-08-19 1995-03-03 Sony Corp Ｃｍｏｓ集積回路
JP2682425B2 (ja) 1993-12-24 1997-11-26 日本電気株式会社 半導体装置の製造方法
US5393679A (en) 1994-04-05 1995-02-28 United Microelectronics Corporation Use of double charge implant to improve retrograde process PMOS punch through voltage
JPH07312423A (ja) * 1994-05-17 1995-11-28 Hitachi Ltd Ｍｉｓ型半導体装置
US5654213A (en) * 1995-10-03 1997-08-05 Integrated Device Technology, Inc. Method for fabricating a CMOS device
US5767556A (en) * 1996-02-21 1998-06-16 Nec Corporation Field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100479398B1 (ko) * 2001-11-22 2005-03-30 미쓰비시덴키 가부시키가이샤 반도체 기억 장치

Also Published As

Publication number Publication date
CN1153295C (zh) 2004-06-09
US6420763B1 (en) 2002-07-16
CN1306615C (zh) 2007-03-21
JPH1070250A (ja) 1998-03-10
DE19734512A1 (de) 1998-03-05
US20020020888A1 (en) 2002-02-21
CN1185658A (zh) 1998-06-24
JP3958388B2 (ja) 2007-08-15
TW356597B (en) 1999-04-21
CN1501504A (zh) 2004-06-02

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