CN111295765B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN111295765B
CN111295765B CN201880071034.6A CN201880071034A CN111295765B CN 111295765 B CN111295765 B CN 111295765B CN 201880071034 A CN201880071034 A CN 201880071034A CN 111295765 B CN111295765 B CN 111295765B
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CN
China
Prior art keywords
trench
semiconductor device
layer
gate electrode
gate
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Active
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CN201880071034.6A
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English (en)
Chinese (zh)
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CN111295765A (zh
Inventor
伊藤正和
坂根宏树
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/205—Nanosized electrodes, e.g. nanowire electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/687—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having cavities, e.g. porous gate dielectrics having gasses therein

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  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
CN201880071034.6A 2017-11-03 2018-11-01 半导体装置 Active CN111295765B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017213329A JP7009933B2 (ja) 2017-11-03 2017-11-03 半導体装置
JP2017-213329 2017-11-03
PCT/JP2018/040772 WO2019088241A1 (ja) 2017-11-03 2018-11-01 半導体装置

Publications (2)

Publication Number Publication Date
CN111295765A CN111295765A (zh) 2020-06-16
CN111295765B true CN111295765B (zh) 2023-04-18

Family

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CN201880071034.6A Active CN111295765B (zh) 2017-11-03 2018-11-01 半导体装置

Country Status (4)

Country Link
US (1) US11508836B2 (https=)
JP (1) JP7009933B2 (https=)
CN (1) CN111295765B (https=)
WO (1) WO2019088241A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250142878A1 (en) * 2023-10-25 2025-05-01 Hon Young Semiconductor Corporation Semiconductor device and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04268734A (ja) * 1991-02-25 1992-09-24 Matsushita Electron Corp 薄膜トランジスタの製造方法
JP2007088010A (ja) * 2005-09-20 2007-04-05 Denso Corp 半導体装置およびその製造方法
JP2015213163A (ja) * 2014-04-15 2015-11-26 ローム株式会社 半導体装置および半導体装置の製造方法
CN106537598A (zh) * 2014-07-14 2017-03-22 株式会社电装 半导体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW442972B (en) * 1999-10-01 2001-06-23 Anpec Electronics Corp Fabricating method of trench-type gate power metal oxide semiconductor field effect transistor
US7217950B2 (en) * 2002-10-11 2007-05-15 Nissan Motor Co., Ltd. Insulated gate tunnel-injection device having heterojunction and method for manufacturing the same
JP4534500B2 (ja) * 2003-05-14 2010-09-01 株式会社デンソー 半導体装置の製造方法
JP4791723B2 (ja) * 2004-10-18 2011-10-12 株式会社東芝 半導体装置及びその製造方法
JP2007005723A (ja) * 2005-06-27 2007-01-11 Toshiba Corp 半導体装置
JP2007043123A (ja) 2005-07-01 2007-02-15 Toshiba Corp 半導体装置
JP5609939B2 (ja) * 2011-09-27 2014-10-22 株式会社デンソー 半導体装置
JP2013251397A (ja) 2012-05-31 2013-12-12 Denso Corp 半導体装置
JP5935948B2 (ja) * 2013-08-06 2016-06-15 富士電機株式会社 トレンチゲートｍｏｓ型半導体装置およびその製造方法
JP2014232895A (ja) 2014-09-11 2014-12-11 株式会社村田製作所 積層セラミックコンデンサ
KR102509260B1 (ko) * 2015-11-20 2023-03-14 삼성디스플레이 주식회사 실리콘 연마 슬러리, 다결정 실리콘의 연마방법 및 박막 트랜지스터 기판의 제조방법
US10643852B2 (en) * 2016-09-30 2020-05-05 Semiconductor Components Industries, Llc Process of forming an electronic device including exposing a substrate to an oxidizing ambient

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04268734A (ja) * 1991-02-25 1992-09-24 Matsushita Electron Corp 薄膜トランジスタの製造方法
JP2007088010A (ja) * 2005-09-20 2007-04-05 Denso Corp 半導体装置およびその製造方法
JP2015213163A (ja) * 2014-04-15 2015-11-26 ローム株式会社 半導体装置および半導体装置の製造方法
CN106537598A (zh) * 2014-07-14 2017-03-22 株式会社电装 半导体装置

Also Published As

Publication number Publication date
JP2019087591A (ja) 2019-06-06
CN111295765A (zh) 2020-06-16
JP7009933B2 (ja) 2022-01-26
US11508836B2 (en) 2022-11-22
WO2019088241A1 (ja) 2019-05-09
US20200312986A1 (en) 2020-10-01

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