JP7009933B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7009933B2
JP7009933B2 JP2017213329A JP2017213329A JP7009933B2 JP 7009933 B2 JP7009933 B2 JP 7009933B2 JP 2017213329 A JP2017213329 A JP 2017213329A JP 2017213329 A JP2017213329 A JP 2017213329A JP 7009933 B2 JP7009933 B2 JP 7009933B2
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JP
Japan
Prior art keywords
trench
semiconductor device
layer
gate electrode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017213329A
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English (en)
Japanese (ja)
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JP2019087591A (ja
JP2019087591A5 (https=
Inventor
正和 伊藤
宏樹 坂根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2017213329A priority Critical patent/JP7009933B2/ja
Priority to PCT/JP2018/040772 priority patent/WO2019088241A1/ja
Priority to CN201880071034.6A priority patent/CN111295765B/zh
Publication of JP2019087591A publication Critical patent/JP2019087591A/ja
Publication of JP2019087591A5 publication Critical patent/JP2019087591A5/ja
Priority to US16/862,790 priority patent/US11508836B2/en
Application granted granted Critical
Publication of JP7009933B2 publication Critical patent/JP7009933B2/ja
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/205—Nanosized electrodes, e.g. nanowire electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/687—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having cavities, e.g. porous gate dielectrics having gasses therein

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
JP2017213329A 2017-11-03 2017-11-03 半導体装置 Active JP7009933B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017213329A JP7009933B2 (ja) 2017-11-03 2017-11-03 半導体装置
PCT/JP2018/040772 WO2019088241A1 (ja) 2017-11-03 2018-11-01 半導体装置
CN201880071034.6A CN111295765B (zh) 2017-11-03 2018-11-01 半导体装置
US16/862,790 US11508836B2 (en) 2017-11-03 2020-04-30 Semiconductor device including trench gate structure with specific volume ratio of gate electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017213329A JP7009933B2 (ja) 2017-11-03 2017-11-03 半導体装置

Publications (3)

Publication Number Publication Date
JP2019087591A JP2019087591A (ja) 2019-06-06
JP2019087591A5 JP2019087591A5 (https=) 2020-04-09
JP7009933B2 true JP7009933B2 (ja) 2022-01-26

Family

ID=66333276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017213329A Active JP7009933B2 (ja) 2017-11-03 2017-11-03 半導体装置

Country Status (4)

Country Link
US (1) US11508836B2 (https=)
JP (1) JP7009933B2 (https=)
CN (1) CN111295765B (https=)
WO (1) WO2019088241A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250142878A1 (en) * 2023-10-25 2025-05-01 Hon Young Semiconductor Corporation Semiconductor device and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006114853A (ja) 2004-10-18 2006-04-27 Toshiba Corp 半導体装置及びその製造方法
JP2007088010A (ja) 2005-09-20 2007-04-05 Denso Corp 半導体装置およびその製造方法
JP2013251397A (ja) 2012-05-31 2013-12-12 Denso Corp 半導体装置
JP2015213163A (ja) 2014-04-15 2015-11-26 ローム株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2874062B2 (ja) * 1991-02-25 1999-03-24 松下電子工業株式会社 薄膜トランジスタの製造方法
TW442972B (en) * 1999-10-01 2001-06-23 Anpec Electronics Corp Fabricating method of trench-type gate power metal oxide semiconductor field effect transistor
US7217950B2 (en) * 2002-10-11 2007-05-15 Nissan Motor Co., Ltd. Insulated gate tunnel-injection device having heterojunction and method for manufacturing the same
JP4534500B2 (ja) * 2003-05-14 2010-09-01 株式会社デンソー 半導体装置の製造方法
JP2007005723A (ja) * 2005-06-27 2007-01-11 Toshiba Corp 半導体装置
JP2007043123A (ja) 2005-07-01 2007-02-15 Toshiba Corp 半導体装置
JP5609939B2 (ja) * 2011-09-27 2014-10-22 株式会社デンソー 半導体装置
JP5935948B2 (ja) * 2013-08-06 2016-06-15 富士電機株式会社 トレンチゲートｍｏｓ型半導体装置およびその製造方法
JP6459791B2 (ja) * 2014-07-14 2019-01-30 株式会社デンソー 半導体装置およびその製造方法
JP2014232895A (ja) 2014-09-11 2014-12-11 株式会社村田製作所 積層セラミックコンデンサ
KR102509260B1 (ko) * 2015-11-20 2023-03-14 삼성디스플레이 주식회사 실리콘 연마 슬러리, 다결정 실리콘의 연마방법 및 박막 트랜지스터 기판의 제조방법
US10643852B2 (en) * 2016-09-30 2020-05-05 Semiconductor Components Industries, Llc Process of forming an electronic device including exposing a substrate to an oxidizing ambient

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006114853A (ja) 2004-10-18 2006-04-27 Toshiba Corp 半導体装置及びその製造方法
JP2007088010A (ja) 2005-09-20 2007-04-05 Denso Corp 半導体装置およびその製造方法
JP2013251397A (ja) 2012-05-31 2013-12-12 Denso Corp 半導体装置
JP2015213163A (ja) 2014-04-15 2015-11-26 ローム株式会社 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
JP2019087591A (ja) 2019-06-06
CN111295765A (zh) 2020-06-16
CN111295765B (zh) 2023-04-18
US11508836B2 (en) 2022-11-22
WO2019088241A1 (ja) 2019-05-09
US20200312986A1 (en) 2020-10-01

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