CN110961803A - 金刚石基板生成方法 - Google Patents

金刚石基板生成方法 Download PDF

Info

Publication number
CN110961803A
CN110961803A CN201910869124.6A CN201910869124A CN110961803A CN 110961803 A CN110961803 A CN 110961803A CN 201910869124 A CN201910869124 A CN 201910869124A CN 110961803 A CN110961803 A CN 110961803A
Authority
CN
China
Prior art keywords
diamond
peeling
ingot
forming
crystal plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910869124.6A
Other languages
English (en)
Other versions
CN110961803B (zh
Inventor
野本朝辉
平田和也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN110961803A publication Critical patent/CN110961803A/zh
Application granted granted Critical
Publication of CN110961803B publication Critical patent/CN110961803B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/55Working by transmitting the laser beam through or within the workpiece for creating voids inside the workpiece, e.g. for forming flow passages or flow patterns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42Bombardment with radiation
    • H01L21/423Bombardment with radiation with high-energy radiation
    • H01L21/428Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23DPLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
    • B23D61/00Tools for sawing machines or sawing devices; Clamping devices for these tools
    • B23D61/006Oscillating saw blades
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/02Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing
    • B28D1/12Saw-blades or saw-discs specially adapted for working stone
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02376Carbon, e.g. diamond-like carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/02433Crystal orientation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mining & Mineral Resources (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

提供金刚石基板生成方法,能够从金刚石锭高效且廉价地生成金刚石基板。该金刚石基板生成方法包含如下的工序:剥离带形成工序,一边使金刚石锭(2)和聚光点(FP)在与结晶面(110)垂直的[110]方向上相对地移动一边对金刚石锭(2)照射激光光线(LB),从而形成剥离带(22);分度进给工序,将金刚石锭(2)和聚光点(FP)在与结晶面(001)平行且与[110]方向垂直的方向上相对地进行分度进给;剥离层形成工序,重复实施该剥离带形成工序和该分度进给工序而在金刚石锭(2)的内部形成与结晶面(001)平行的剥离层(24);以及剥离工序,从金刚石锭(2)的剥离层(24)剥离要生成的金刚石基板。

Description

金刚石基板生成方法
技术领域
本发明涉及金刚石基板生成方法,从结晶面(001)为平坦面的金刚石锭生成金刚石基板。
背景技术
IC、LSI等多个器件是在Si(硅)等晶片形状的半导体基板的上表面上层叠功能层且由交叉的多条分割预定线对该功能层进行划分而形成的,该半导体晶片通过切割装置、激光加工装置而分割成各个器件芯片,分割得到的各器件芯片被用于移动电话、个人计算机等电子设备。
近年来,从绝缘耐压、热传导率、物理特性优异的方面出发,将金刚石用作半导体基板备受关注(例如,参照下述专利文献1和2)。
专利文献1:日本特开2008-78611号公报
专利文献2:日本特开2015-57824号公报
但是,存在如下的问题:从金刚石锭高效地生成金刚石基板的技术仍在开发中,金刚石基板昂贵而不经济。
发明内容
由此,本发明的目的在于提供金刚石基板生成方法,能够从金刚石锭高效且廉价地生成金刚石基板。
根据本发明,提供金刚石基板生成方法,从结晶面(001)为平坦面的金刚石锭生成金刚石基板,其中,该金刚石基板生成方法具有如下的工序:聚光点定位工序,将对于金刚石具有透过性的波长的激光光线的聚光点定位于距离该平坦面相当于要生成的金刚石基板的厚度的深度;剥离带形成工序,在实施了该聚光点定位工序之后,一边使金刚石锭和聚光点在与结晶面(110)垂直的[110]方向上相对地移动一边对金刚石锭照射激光光线,从而形成剥离带;分度进给工序,在实施了该剥离带形成工序之后,将金刚石锭和聚光点在与结晶面(001)平行且与[110]方向垂直的方向上相对地进行分度进给;剥离层形成工序,重复实施该剥离带形成工序和该分度进给工序而在金刚石锭的内部形成与结晶面(001)平行的剥离层;以及剥离工序,在实施了该剥离层形成工序之后,从金刚石锭的该剥离层剥离要生成的金刚石基板。
优选在该分度进给工序中,按照相邻的剥离带接触的方式进行分度进给。
根据本发明的金刚石基板生成方法,能够从金刚石锭高效且廉价地生成金刚石基板。
附图说明
图1是金刚石锭的立体图。
图2的(a)是示出实施剥离带形成工序的状态的立体图,图2的(b)是示出实施剥离带形成工序的状态的主视图,图2的(c)是形成有剥离带的金刚石锭的剖视图。
图3的(a)是示出将金刚石锭定位于剥离装置的下方的状态的立体图,图3的(b)是示出实施剥离工序的状态的立体图,图3的(c)是金刚石锭和金刚石基板的立体图。
标号说明
2:金刚石锭;18:结晶构造被破坏的部分;20:裂纹;22:剥离带;24:剥离层;LB:激光光线;FP:聚光点。
具体实施方式
以下,参照附图对本发明的金刚石基板生成方法的优选实施方式进行说明。
在图1中示出能够实施本发明的金刚石基板生成方法的金刚石锭2。金刚石锭2整体形成为圆柱形状,金刚石锭2具有:结晶面(001)为平坦面的圆形状的第一端面4;与第一端面4相反的一侧的圆形状的第二端面6;以及位于第一端面4与第二端面6之间的周面8。在金刚石锭2的周面8上形成有与结晶面(110)平行的矩形状的定向平面10。另外,用图1中箭头表示与结晶面(110)垂直的[110]方向。
在本实施方式中,首先实施聚光点定位工序,将对于金刚石具有透过性的波长的激光光线的聚光点定位于距离平坦面相当于要生成的金刚石基板的厚度的深度。聚光点定位工序例如可以使用在图2中示出一部分的激光加工装置12来实施。
激光加工装置12具有:保持工作台14,其对金刚石锭2进行保持;以及聚光器16,其将对于金刚石具有透过性的波长的脉冲激光光线LB照射至保持工作台14所保持的金刚石锭2。保持工作台14构成为以沿上下方向延伸的轴线为中心而旋转自如,并且构成为分别在图2中箭头X所示的X轴方向和与X轴方向垂直的Y轴方向(图2中箭头Y所示的方向)上进退自如。另外,保持工作台14构成为能够从激光加工装置12的加工区域自如移动至后述的剥离装置26。另外,由X轴方向和Y轴方向所限定的平面实质上是水平的。
在本实施方式的聚光点定位工序中,首先借助适当的粘接剂(例如环氧树脂系粘接剂)将金刚石锭2固定于保持工作台14的上表面上。另外,也可以在保持工作台14的上表面上形成有多个吸引孔,在保持工作台14的上表面上生成吸引力而对金刚石锭2进行吸引保持。接着,利用激光加工装置12的拍摄单元(未图示)从上方对金刚石锭2进行拍摄,根据拍摄单元所拍摄的金刚石锭2的图像,使保持工作台14旋转和移动,从而将金刚石锭2的朝向调整为规定的朝向,并且调整金刚石锭2和聚光器16在XY平面上的位置。在将金刚石锭2的朝向调整为规定的朝向时,如图2的(a)所示,通过使定向平面10与Y轴方向一致,从而使垂直于结晶面(110)的[110]方向与X轴方向一致。接着,如图2的(b)所示,利用激光加工装置12的聚光点位置调整单元(未图示)使聚光器16升降,将对于金刚石具有透过性的波长的脉冲激光光线LB的聚光点FP定位于距离平坦的第一端面4相当于要生成的金刚石基板的厚度的深度(例如200μm)。
在实施了聚光点定位工序之后,实施剥离带形成工序,一边使金刚石锭2和聚光点FP在与结晶面(110)垂直的[110]方向上相对地移动,一边对金刚石锭2照射激光光线LB而形成剥离带。
在本实施方式的剥离带形成工序中,一边使保持工作台14在与垂直于结晶面(110)的[110]方向一致的X轴方向上按照规定的进给速度移动,一边从聚光器16对金刚石锭2照射对于金刚石具有透过性的波长的脉冲激光光线LB。于是,如图2的(c)所示,结晶构造通过脉冲激光光线LB的照射而被破坏,并且沿着[110]方向形成剥离带22,该剥离带22是裂纹20从结晶构造被破坏的部分18按照各向同性而延伸而得的。另外,在剥离带形成工序中,也可以代替保持工作台14而使聚光器16移动。
接着,实施分度进给工序,将金刚石锭2和聚光点FP在与结晶面(001)平行且与[110]方向垂直的方向上相对地进行分度进给。在本实施方式的分度进给工序中,将保持工作台14按照规定的转位量Li在与[110]方向垂直的Y轴方向上进行分度进给。另外,在分度进给工序中,也可以代替保持工作台14而对聚光器16进行分度进给。
并且,实施剥离层形成工序,重复实施多次剥离带形成工序和分度进给工序而在金刚石锭2的内部形成与结晶面(001)平行的剥离层。由此,如图2的(c)所示,能够在金刚石锭2的内部形成由多个剥离带22构成且强度降低的剥离层24。另外,在图2的(c)中,在相邻的剥离带22的裂纹20彼此之间设置有间隙,但优选在分度进给工序中按照相邻的剥离带22接触的方式进行分度进给。由此,能够使相邻的剥离带22彼此连结而进一步降低剥离层24的强度,从而在下述剥离工序中容易将金刚石基板从金刚石锭2剥离。
这样的剥离层形成工序例如可以在以下的加工条件下进行。另外,下述通行数是对金刚石锭2的同一部位进行脉冲激光光线LB的照射的次数。
Figure BDA0002202225370000041
在实施了剥离层形成工序之后,实施剥离工序,从金刚石锭2的剥离层24剥离要生成的金刚石基板。剥离工序可以使用在图3中示出一部分的剥离装置26来实施。剥离装置26包含:实质上水平延伸的臂28;以及附设在臂28的前端的电动机30。在电动机30的下表面上按照以沿上下方向延伸的轴线为中心而旋转自如的方式连结有圆盘状的吸附片32。该吸附片32构成为在下表面上对被加工物进行吸附,在吸附片32中内置有对吸附片32的下表面赋予超声波振动的超声波振动赋予单元(未图示)。
参照图3继续进行说明,在剥离工序中,首先将保持着金刚石锭2的保持工作台14移动至剥离装置26的吸附片32的下方。接着,使臂28下降,如图3的(b)所示,使吸附片32的下表面吸附在金刚石锭2的第一端面4(靠近剥离层24的端面)上。接着,使超声波振动赋予单元进行动作而对吸附片32的下表面赋予超声波振动,并且利用电动机30使吸附片32旋转。由此,如图3的(c)所示,能够从金刚石锭2的剥离层24剥离要生成的金刚石基板34。另外,金刚石基板34的剥离面36使用适当的平坦化装置来进行平坦化。
并且,在对剥离了金刚石基板34后的金刚石锭2的剥离面38进行了平坦化之后,重复进行上述的聚光点定位工序、剥离带形成工序、分度进给工序、剥离层形成工序以及剥离工序,从而能够从金刚石锭2生成多个金刚石基板34。因此,在本实施方式中,能够从金刚石锭2高效且廉价地生成金刚石基板34。

Claims (2)

1.一种金刚石基板生成方法,从结晶面(001)为平坦面的金刚石锭生成金刚石基板,其中,
该金刚石基板生成方法具有如下的工序:
聚光点定位工序,将对于金刚石具有透过性的波长的激光光线的聚光点定位于距离该平坦面相当于要生成的金刚石基板的厚度的深度;
剥离带形成工序,在实施了该聚光点定位工序之后,一边使金刚石锭和聚光点在与结晶面(110)垂直的[110]方向上相对地移动一边对金刚石锭照射激光光线,从而形成剥离带;
分度进给工序,在实施了该剥离带形成工序之后,将金刚石锭和聚光点在与结晶面(001)平行且与[110]方向垂直的方向上相对地进行分度进给;
剥离层形成工序,重复实施该剥离带形成工序和该分度进给工序而在金刚石锭的内部形成与结晶面(001)平行的剥离层;以及
剥离工序,在实施了该剥离层形成工序之后,从金刚石锭的该剥离层剥离要生成的金刚石基板。
2.根据权利要求1所述的金刚石基板生成方法,其中,
在该分度进给工序中,按照相邻的该剥离带接触的方式进行分度进给。
CN201910869124.6A 2018-09-28 2019-09-16 金刚石基板生成方法 Active CN110961803B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-183661 2018-09-28
JP2018183661A JP7327920B2 (ja) 2018-09-28 2018-09-28 ダイヤモンド基板生成方法

Publications (2)

Publication Number Publication Date
CN110961803A true CN110961803A (zh) 2020-04-07
CN110961803B CN110961803B (zh) 2022-09-30

Family

ID=69781241

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910869124.6A Active CN110961803B (zh) 2018-09-28 2019-09-16 金刚石基板生成方法

Country Status (8)

Country Link
US (1) US10950462B2 (zh)
JP (1) JP7327920B2 (zh)
KR (1) KR102629100B1 (zh)
CN (1) CN110961803B (zh)
DE (1) DE102019214897A1 (zh)
MY (1) MY192752A (zh)
SG (1) SG10201909034YA (zh)
TW (1) TWI812785B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024006433A (ja) 2022-07-01 2024-01-17 株式会社ディスコ ダイヤモンド基板製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005277136A (ja) * 2004-03-25 2005-10-06 Sharp Corp 基板製造方法および基板製造装置
US20070069255A1 (en) * 2005-09-12 2007-03-29 Samsung Electronics Co., Ltd. Mos transistors having optimized channel plane orientation, semiconductor devices including the same, and methods of fabricating the same
CN105665946A (zh) * 2014-12-04 2016-06-15 株式会社迪思科 晶片的生成方法
CN105750741A (zh) * 2015-01-06 2016-07-13 株式会社迪思科 晶片的生成方法
WO2016114382A1 (ja) * 2015-01-16 2016-07-21 住友電気工業株式会社 半導体基板の製造方法、半導体基板、複合半導体基板の製造方法、複合半導体基板、および半導体接合基板
US20170233889A1 (en) * 2014-08-08 2017-08-17 Sumitomo Electric Industries, Ltd. Method of manufacturing diamond, diamond, diamond composite substrate, diamond joined substrate, and tool
US20180056440A1 (en) * 2016-08-29 2018-03-01 Disco Corporation METHOD OF PRODUCING SiC WAFER
JP2018050066A (ja) * 2016-05-17 2018-03-29 エルシード株式会社 加工対象材料の切断方法
CN108447769A (zh) * 2017-02-16 2018-08-24 株式会社迪思科 晶片生成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890736A (ja) * 1981-11-25 1983-05-30 Toshiba Corp 半導体装置用サフアイア基板
JP5273635B2 (ja) 2006-08-25 2013-08-28 独立行政法人産業技術総合研究所 高効率間接遷移型半導体紫外線発光素子
JP5419101B2 (ja) 2008-07-01 2014-02-19 独立行政法人産業技術総合研究所 ダイヤモンド半導体装置及びその製造方法
RU2469433C1 (ru) * 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
WO2013126927A2 (en) * 2012-02-26 2013-08-29 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
JP6506520B2 (ja) * 2014-09-16 2019-04-24 株式会社ディスコ SiCのスライス方法
KR20200006641A (ko) * 2014-11-27 2020-01-20 실텍트라 게엠베하 재료의 전환을 이용한 고체의 분할
JP6604891B2 (ja) * 2016-04-06 2019-11-13 株式会社ディスコ ウエーハの生成方法
JP6959073B2 (ja) * 2017-08-30 2021-11-02 株式会社ディスコ レーザー加工装置
US10388526B1 (en) * 2018-04-20 2019-08-20 Semiconductor Components Industries, Llc Semiconductor wafer thinning systems and related methods
US11309191B2 (en) * 2018-08-07 2022-04-19 Siltectra Gmbh Method for modifying substrates based on crystal lattice dislocation density

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005277136A (ja) * 2004-03-25 2005-10-06 Sharp Corp 基板製造方法および基板製造装置
US20070069255A1 (en) * 2005-09-12 2007-03-29 Samsung Electronics Co., Ltd. Mos transistors having optimized channel plane orientation, semiconductor devices including the same, and methods of fabricating the same
US20170233889A1 (en) * 2014-08-08 2017-08-17 Sumitomo Electric Industries, Ltd. Method of manufacturing diamond, diamond, diamond composite substrate, diamond joined substrate, and tool
CN105665946A (zh) * 2014-12-04 2016-06-15 株式会社迪思科 晶片的生成方法
CN105750741A (zh) * 2015-01-06 2016-07-13 株式会社迪思科 晶片的生成方法
WO2016114382A1 (ja) * 2015-01-16 2016-07-21 住友電気工業株式会社 半導体基板の製造方法、半導体基板、複合半導体基板の製造方法、複合半導体基板、および半導体接合基板
JP2018050066A (ja) * 2016-05-17 2018-03-29 エルシード株式会社 加工対象材料の切断方法
US20180056440A1 (en) * 2016-08-29 2018-03-01 Disco Corporation METHOD OF PRODUCING SiC WAFER
CN108447769A (zh) * 2017-02-16 2018-08-24 株式会社迪思科 晶片生成方法

Also Published As

Publication number Publication date
JP7327920B2 (ja) 2023-08-16
SG10201909034YA (en) 2020-04-29
MY192752A (en) 2022-09-06
CN110961803B (zh) 2022-09-30
KR20200036731A (ko) 2020-04-07
US20200105543A1 (en) 2020-04-02
TWI812785B (zh) 2023-08-21
US10950462B2 (en) 2021-03-16
TW202013473A (zh) 2020-04-01
DE102019214897A1 (de) 2020-04-02
JP2020050563A (ja) 2020-04-02
KR102629100B1 (ko) 2024-01-24

Similar Documents

Publication Publication Date Title
CN108372434B (zh) SiC晶片的生成方法
CN108145307B (zh) SiC晶片的生成方法
KR102260340B1 (ko) SiC 웨이퍼의 생성 방법
CN107877011B (zh) SiC晶片的生成方法
CN107464778B (zh) 晶片生成方法
CN105047612B (zh) 晶片的加工方法
CN110911268B (zh) 晶片的生成方法和激光加工装置
JP6189208B2 (ja) ウエーハの加工方法
KR102178776B1 (ko) SiC 웨이퍼의 생성 방법
JP2011187479A (ja) ウエーハの加工方法
CN114055645A (zh) Si基板制造方法
JP2020035821A (ja) SiC基板の加工方法
CN110828297A (zh) 半导体基板的加工方法
CN110961803B (zh) 金刚石基板生成方法
KR102629098B1 (ko) 웨이퍼의 가공 방법
JP6305867B2 (ja) ウエーハの加工方法
CN107316833B (zh) 晶片的加工方法
JP2011228362A (ja) 半導体装置の製造方法
JP2018133370A (ja) ウエーハの加工方法
JP2019016731A (ja) ウェーハの加工方法
JP2018133371A (ja) ウエーハの加工方法
CN107309555B (zh) 晶片的加工方法
JP6346067B2 (ja) ウエーハの加工方法
TW201503253A (zh) 晶圓之加工方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant