SG10201909034YA - Diamond substrate producing method - Google Patents

Diamond substrate producing method

Info

Publication number
SG10201909034YA
SG10201909034YA SG10201909034YA SG10201909034YA SG10201909034YA SG 10201909034Y A SG10201909034Y A SG 10201909034YA SG 10201909034Y A SG10201909034Y A SG 10201909034YA SG 10201909034Y A SG10201909034Y A SG 10201909034YA SG 10201909034Y A SG10201909034Y A SG 10201909034YA
Authority
SG
Singapore
Prior art keywords
producing method
diamond substrate
substrate producing
diamond
substrate
Prior art date
Application number
SG10201909034YA
Other languages
English (en)
Inventor
Hirata Kazuya
Nomoto Asahi
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201909034YA publication Critical patent/SG10201909034YA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/55—Working by transmitting the laser beam through or within the workpiece for creating voids inside the workpiece, e.g. for forming flow passages or flow patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
    • B23D61/00—Tools for sawing machines or sawing devices; Clamping devices for these tools
    • B23D61/006—Oscillating saw blades
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • H01L21/428—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/02—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing
    • B28D1/12—Saw-blades or saw-discs specially adapted for working stone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02376—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Mining & Mineral Resources (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
SG10201909034YA 2018-09-28 2019-09-27 Diamond substrate producing method SG10201909034YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018183661A JP7327920B2 (ja) 2018-09-28 2018-09-28 ダイヤモンド基板生成方法

Publications (1)

Publication Number Publication Date
SG10201909034YA true SG10201909034YA (en) 2020-04-29

Family

ID=69781241

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201909034YA SG10201909034YA (en) 2018-09-28 2019-09-27 Diamond substrate producing method

Country Status (8)

Country Link
US (1) US10950462B2 (zh)
JP (1) JP7327920B2 (zh)
KR (1) KR102629100B1 (zh)
CN (1) CN110961803B (zh)
DE (1) DE102019214897A1 (zh)
MY (1) MY192752A (zh)
SG (1) SG10201909034YA (zh)
TW (1) TWI812785B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024006433A (ja) 2022-07-01 2024-01-17 株式会社ディスコ ダイヤモンド基板製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890736A (ja) * 1981-11-25 1983-05-30 Toshiba Corp 半導体装置用サフアイア基板
KR100641365B1 (ko) * 2005-09-12 2006-11-01 삼성전자주식회사 최적화된 채널 면 방위를 갖는 모스 트랜지스터들, 이를구비하는 반도체 소자들 및 그 제조방법들
JP2005277136A (ja) * 2004-03-25 2005-10-06 Sharp Corp 基板製造方法および基板製造装置
JP5273635B2 (ja) 2006-08-25 2013-08-28 独立行政法人産業技術総合研究所 高効率間接遷移型半導体紫外線発光素子
WO2010001705A1 (ja) 2008-07-01 2010-01-07 独立行政法人産業技術総合研究所 ダイヤモンド半導体装置及びその製造方法
RU2469433C1 (ru) * 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
WO2013126927A2 (en) * 2012-02-26 2013-08-29 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
JP6575522B2 (ja) * 2014-08-08 2019-09-18 住友電気工業株式会社 ダイヤモンドの製造方法
JP6506520B2 (ja) * 2014-09-16 2019-04-24 株式会社ディスコ ＳｉＣのスライス方法
JP6396505B2 (ja) * 2014-11-27 2018-09-26 シルテクトラ ゲゼルシャフト ミット ベシュレンクター ハフトゥング 物質変化による固体分離
JP6358940B2 (ja) * 2014-12-04 2018-07-18 株式会社ディスコ ウエーハの生成方法
JP6391471B2 (ja) * 2015-01-06 2018-09-19 株式会社ディスコ ウエーハの生成方法
JP6822146B2 (ja) 2015-01-16 2021-01-27 住友電気工業株式会社 半導体基板の製造方法及び複合半導体基板の製造方法
JP6604891B2 (ja) * 2016-04-06 2019-11-13 株式会社ディスコ ウエーハの生成方法
WO2017199784A1 (ja) 2016-05-17 2017-11-23 エルシード株式会社 加工対象材料の切断方法
JP6723877B2 (ja) * 2016-08-29 2020-07-15 株式会社ディスコ ウエーハ生成方法
JP6858586B2 (ja) * 2017-02-16 2021-04-14 株式会社ディスコ ウエーハ生成方法
JP6959073B2 (ja) * 2017-08-30 2021-11-02 株式会社ディスコ レーザー加工装置
US10388526B1 (en) * 2018-04-20 2019-08-20 Semiconductor Components Industries, Llc Semiconductor wafer thinning systems and related methods
US11309191B2 (en) * 2018-08-07 2022-04-19 Siltectra Gmbh Method for modifying substrates based on crystal lattice dislocation density

Also Published As

Publication number Publication date
MY192752A (en) 2022-09-06
TWI812785B (zh) 2023-08-21
DE102019214897A1 (de) 2020-04-02
JP7327920B2 (ja) 2023-08-16
US10950462B2 (en) 2021-03-16
CN110961803A (zh) 2020-04-07
TW202013473A (zh) 2020-04-01
CN110961803B (zh) 2022-09-30
KR20200036731A (ko) 2020-04-07
JP2020050563A (ja) 2020-04-02
KR102629100B1 (ko) 2024-01-24
US20200105543A1 (en) 2020-04-02

Similar Documents

Publication Publication Date Title
SG10201910623VA (en) Wafer producing method
SG10201702358YA (en) Wafer producing method
SG10201704123PA (en) Wafer producing method
EP3588653A4 (en) SINGLE CELL PRODUCTION METHOD
SG11201607359XA (en) Polishing composition, polishing method, and method for producing substrate
EP3276050A4 (en) Method for producing silicon carbide single crystal
GB2589994B (en) Method for producing GaN layered substrate
EP3666729C0 (en) PROCESS FOR THE PRODUCTION OF NANO-SULFUR
PL3351520T3 (pl) Sposób wytwarzania polikryształu diamentowego i polikryształ diamentowy
EP3352197A4 (en) METHOD FOR MANUFACTURING A COMPOSITE SUBSTRATE OF SiC
GB2543968B (en) Coir substrate and apparatus and method for the production thereof
EP3794631A4 (en) METHODS OF FORMING LARGE AREA DIAMOND SUBSTRATES
EP3588654A4 (en) PROCESS FOR PRODUCING A MONOCELL
EP3690085A4 (en) PROCESS FOR THE PRODUCTION OF A SINGLE CRYSTAL OF SILICON CARBIDE
EP3675604A4 (en) METHOD OF MANUFACTURING A CERAMIC SUBSTRATE AND A CERAMIC SUBSTRATE
PL3942107T3 (pl) Sposób wytwarzania
EP3103898A4 (en) Diamond substrate and method for manufacturing diamond substrate
PL3733651T3 (pl) Sposób wytwarzania kalkobutrolu
EP3470555A4 (en) METHOD FOR PRODUCING SUBSTRATE
EP3890000A4 (en) PROCESS FOR MAKING A DIAMOND SUBSTRATE
SG11202103772WA (en) Fluorescent diamond and method for producing same
GB2591348B (en) Method for producing GaN laminate substrate
SG10201909034YA (en) Diamond substrate producing method
EP3536441A4 (en) PROCESS FOR FORMING PERIODIC THIN STRUCTURAL GROOVES ON A DIAMOND SURFACE
GB2575351B (en) Method for producing homoepitaxial diamond layers