SG10201910623VA - Wafer producing method - Google Patents
Wafer producing methodInfo
- Publication number
- SG10201910623VA SG10201910623VA SG10201910623VA SG10201910623VA SG10201910623VA SG 10201910623V A SG10201910623V A SG 10201910623VA SG 10201910623V A SG10201910623V A SG 10201910623VA SG 10201910623V A SG10201910623V A SG 10201910623VA SG 10201910623V A SG10201910623V A SG 10201910623VA
- Authority
- SG
- Singapore
- Prior art keywords
- producing method
- wafer producing
- wafer
- producing
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/047—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by ultrasonic cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0093—Working by laser beam, e.g. welding, cutting or boring combined with mechanical machining or metal-working covered by other subclasses than B23K
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018218399A JP7166893B2 (en) | 2018-11-21 | 2018-11-21 | Wafer generation method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201910623VA true SG10201910623VA (en) | 2020-06-29 |
Family
ID=70546010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201910623VA SG10201910623VA (en) | 2018-11-21 | 2019-11-13 | Wafer producing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US11446771B2 (en) |
JP (1) | JP7166893B2 (en) |
KR (1) | KR20200060250A (en) |
CN (1) | CN111203652B (en) |
DE (1) | DE102019217967A1 (en) |
SG (1) | SG10201910623VA (en) |
TW (1) | TWI838421B (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
JP7330771B2 (en) * | 2019-06-14 | 2023-08-22 | 株式会社ディスコ | Wafer production method and wafer production apparatus |
JP7408475B2 (en) * | 2020-04-16 | 2024-01-05 | 株式会社ディスコ | Peeling device |
CN111889896B (en) * | 2020-07-02 | 2022-05-03 | 松山湖材料实验室 | Ingot stripping method by ultrasonic-laser cooperation |
CN114670288B (en) * | 2022-03-08 | 2023-08-15 | 海目星激光科技集团股份有限公司 | Ultrasonic splitting method and splitting device |
CN114571540B (en) * | 2022-03-08 | 2024-03-19 | 海目星激光科技集团股份有限公司 | Ultrasonic splitting method |
CN114932635A (en) * | 2022-04-13 | 2022-08-23 | 深圳市米珈来智能装备有限公司 | Wafer separation equipment and method |
CN114932634A (en) * | 2022-04-13 | 2022-08-23 | 深圳市米珈来智能装备有限公司 | Wafer separation equipment and method |
CN116072541B (en) * | 2023-03-06 | 2023-08-22 | 北京科里特科技有限公司 | Method for manufacturing semiconductor device |
CN117133632B (en) * | 2023-10-26 | 2024-02-20 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Double-frequency ultrasonic crack propagation and single crystal SiC stripping device |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000094221A (en) | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | Electric discharge wire saw |
JP4787089B2 (en) * | 2006-06-26 | 2011-10-05 | 大日本スクリーン製造株式会社 | Substrate processing method and substrate processing apparatus |
US8623137B1 (en) * | 2008-05-07 | 2014-01-07 | Silicon Genesis Corporation | Method and device for slicing a shaped silicon ingot using layer transfer |
JP5509448B2 (en) | 2009-09-07 | 2014-06-04 | 国立大学法人埼玉大学 | Substrate slicing method |
JP5183777B2 (en) * | 2011-07-12 | 2013-04-17 | 株式会社カイジョー | Ultrasonic cleaning apparatus and ultrasonic cleaning method |
US9649722B2 (en) * | 2013-03-15 | 2017-05-16 | Illinois Institute Of Technology | Ultrasound-assisted water-confined laser micromachining |
JP6390898B2 (en) * | 2014-08-22 | 2018-09-19 | アイシン精機株式会社 | Substrate manufacturing method, workpiece cutting method, and laser processing apparatus |
JP6399913B2 (en) | 2014-12-04 | 2018-10-03 | 株式会社ディスコ | Wafer generation method |
JP6395634B2 (en) * | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | Wafer generation method |
JP6395633B2 (en) * | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | Wafer generation method |
JP6781639B2 (en) * | 2017-01-31 | 2020-11-04 | 株式会社ディスコ | Wafer generation method |
JP6858587B2 (en) * | 2017-02-16 | 2021-04-14 | 株式会社ディスコ | Wafer generation method |
JP6858586B2 (en) * | 2017-02-16 | 2021-04-14 | 株式会社ディスコ | Wafer generation method |
JP7187215B2 (en) * | 2018-08-28 | 2022-12-12 | 株式会社ディスコ | SiC substrate processing method |
JP7201367B2 (en) * | 2018-08-29 | 2023-01-10 | 株式会社ディスコ | SiC substrate processing method |
-
2018
- 2018-11-21 JP JP2018218399A patent/JP7166893B2/en active Active
-
2019
- 2019-11-01 KR KR1020190138785A patent/KR20200060250A/en not_active Application Discontinuation
- 2019-11-12 CN CN201911100198.XA patent/CN111203652B/en active Active
- 2019-11-13 SG SG10201910623VA patent/SG10201910623VA/en unknown
- 2019-11-15 US US16/685,393 patent/US11446771B2/en active Active
- 2019-11-20 TW TW108142069A patent/TWI838421B/en active
- 2019-11-21 DE DE102019217967.3A patent/DE102019217967A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
DE102019217967A1 (en) | 2020-05-28 |
CN111203652B (en) | 2022-11-08 |
JP2020088097A (en) | 2020-06-04 |
US20200156190A1 (en) | 2020-05-21 |
KR20200060250A (en) | 2020-05-29 |
CN111203652A (en) | 2020-05-29 |
TW202020962A (en) | 2020-06-01 |
US11446771B2 (en) | 2022-09-20 |
TWI838421B (en) | 2024-04-11 |
JP7166893B2 (en) | 2022-11-08 |
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