SG10201910623VA - Wafer producing method - Google Patents

Wafer producing method

Info

Publication number
SG10201910623VA
SG10201910623VA SG10201910623VA SG10201910623VA SG10201910623VA SG 10201910623V A SG10201910623V A SG 10201910623VA SG 10201910623V A SG10201910623V A SG 10201910623VA SG 10201910623V A SG10201910623V A SG 10201910623VA SG 10201910623V A SG10201910623V A SG 10201910623VA
Authority
SG
Singapore
Prior art keywords
producing method
wafer producing
wafer
producing
Prior art date
Application number
SG10201910623VA
Inventor
Yamamoto Ryohei
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201910623VA publication Critical patent/SG10201910623VA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/047Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by ultrasonic cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0093Working by laser beam, e.g. welding, cutting or boring combined with mechanical machining or metal-working covered by other subclasses than B23K
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02378Silicon carbide
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608Silicon carbide
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52Ceramics
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG10201910623VA 2018-11-21 2019-11-13 Wafer producing method SG10201910623VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018218399A JP7166893B2 (en) 2018-11-21 2018-11-21 Wafer generation method

Publications (1)

Publication Number Publication Date
SG10201910623VA true SG10201910623VA (en) 2020-06-29

Family

ID=70546010

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201910623VA SG10201910623VA (en) 2018-11-21 2019-11-13 Wafer producing method

Country Status (7)

Country Link
US (1) US11446771B2 (en)
JP (1) JP7166893B2 (en)
KR (1) KR20200060250A (en)
CN (1) CN111203652B (en)
DE (1) DE102019217967A1 (en)
SG (1) SG10201910623VA (en)
TW (1) TWI838421B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP7330771B2 (en) * 2019-06-14 2023-08-22 株式会社ディスコ Wafer production method and wafer production apparatus
JP7408475B2 (en) * 2020-04-16 2024-01-05 株式会社ディスコ Peeling device
CN111889896B (en) * 2020-07-02 2022-05-03 松山湖材料实验室 Ingot stripping method by ultrasonic-laser cooperation
CN114670288B (en) * 2022-03-08 2023-08-15 海目星激光科技集团股份有限公司 Ultrasonic splitting method and splitting device
CN114571540B (en) * 2022-03-08 2024-03-19 海目星激光科技集团股份有限公司 Ultrasonic splitting method
CN114932635A (en) * 2022-04-13 2022-08-23 深圳市米珈来智能装备有限公司 Wafer separation equipment and method
CN114932634A (en) * 2022-04-13 2022-08-23 深圳市米珈来智能装备有限公司 Wafer separation equipment and method
CN116072541B (en) * 2023-03-06 2023-08-22 北京科里特科技有限公司 Method for manufacturing semiconductor device
CN117133632B (en) * 2023-10-26 2024-02-20 西北电子装备技术研究所(中国电子科技集团公司第二研究所) Double-frequency ultrasonic crack propagation and single crystal SiC stripping device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000094221A (en) 1998-09-24 2000-04-04 Toyo Advanced Technologies Co Ltd Electric discharge wire saw
JP4787089B2 (en) * 2006-06-26 2011-10-05 大日本スクリーン製造株式会社 Substrate processing method and substrate processing apparatus
US8623137B1 (en) * 2008-05-07 2014-01-07 Silicon Genesis Corporation Method and device for slicing a shaped silicon ingot using layer transfer
JP5509448B2 (en) 2009-09-07 2014-06-04 国立大学法人埼玉大学 Substrate slicing method
JP5183777B2 (en) * 2011-07-12 2013-04-17 株式会社カイジョー Ultrasonic cleaning apparatus and ultrasonic cleaning method
US9649722B2 (en) * 2013-03-15 2017-05-16 Illinois Institute Of Technology Ultrasound-assisted water-confined laser micromachining
JP6390898B2 (en) * 2014-08-22 2018-09-19 アイシン精機株式会社 Substrate manufacturing method, workpiece cutting method, and laser processing apparatus
JP6399913B2 (en) 2014-12-04 2018-10-03 株式会社ディスコ Wafer generation method
JP6395634B2 (en) * 2015-02-09 2018-09-26 株式会社ディスコ Wafer generation method
JP6395633B2 (en) * 2015-02-09 2018-09-26 株式会社ディスコ Wafer generation method
JP6781639B2 (en) * 2017-01-31 2020-11-04 株式会社ディスコ Wafer generation method
JP6858587B2 (en) * 2017-02-16 2021-04-14 株式会社ディスコ Wafer generation method
JP6858586B2 (en) * 2017-02-16 2021-04-14 株式会社ディスコ Wafer generation method
JP7187215B2 (en) * 2018-08-28 2022-12-12 株式会社ディスコ SiC substrate processing method
JP7201367B2 (en) * 2018-08-29 2023-01-10 株式会社ディスコ SiC substrate processing method

Also Published As

Publication number Publication date
DE102019217967A1 (en) 2020-05-28
CN111203652B (en) 2022-11-08
JP2020088097A (en) 2020-06-04
US20200156190A1 (en) 2020-05-21
KR20200060250A (en) 2020-05-29
CN111203652A (en) 2020-05-29
TW202020962A (en) 2020-06-01
US11446771B2 (en) 2022-09-20
TWI838421B (en) 2024-04-11
JP7166893B2 (en) 2022-11-08

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