SG11201704275UA - Splitting of a solid using conversion of material - Google Patents
Splitting of a solid using conversion of materialInfo
- Publication number
- SG11201704275UA SG11201704275UA SG11201704275UA SG11201704275UA SG11201704275UA SG 11201704275U A SG11201704275U A SG 11201704275UA SG 11201704275U A SG11201704275U A SG 11201704275UA SG 11201704275U A SG11201704275U A SG 11201704275UA SG 11201704275U A SG11201704275U A SG 11201704275UA
- Authority
- SG
- Singapore
- Prior art keywords
- splitting
- conversion
- solid
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
- B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Dicing (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014017583 | 2014-11-27 | ||
DE102014017582 | 2014-11-27 | ||
DE102014018720.9A DE102014018720A1 (en) | 2014-11-27 | 2014-12-17 | Solid-state separation process with laser-based pre-damage |
DE102014018841.8A DE102014018841A1 (en) | 2014-11-27 | 2014-12-17 | Laser-based separation process |
DE102015000449.2A DE102015000449A1 (en) | 2015-01-15 | 2015-01-15 | Solid body distribution by means of material conversion |
PCT/EP2015/077981 WO2016083610A2 (en) | 2014-11-27 | 2015-11-27 | Splitting of a solid using conversion of material |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201704275UA true SG11201704275UA (en) | 2017-06-29 |
Family
ID=56075088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201704275UA SG11201704275UA (en) | 2014-11-27 | 2015-11-27 | Splitting of a solid using conversion of material |
Country Status (8)
Country | Link |
---|---|
US (3) | US11407066B2 (en) |
EP (5) | EP3399542B1 (en) |
JP (2) | JP6396505B2 (en) |
KR (5) | KR20180059569A (en) |
CN (3) | CN108838562B (en) |
MY (1) | MY174094A (en) |
SG (1) | SG11201704275UA (en) |
WO (1) | WO2016083610A2 (en) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016083610A2 (en) * | 2014-11-27 | 2016-06-02 | Siltectra Gmbh | Splitting of a solid using conversion of material |
DE102015000449A1 (en) | 2015-01-15 | 2016-07-21 | Siltectra Gmbh | Solid body distribution by means of material conversion |
EP4234156A3 (en) | 2014-11-27 | 2023-10-11 | Siltectra GmbH | Laser based slicing method |
JP6698468B2 (en) * | 2016-08-10 | 2020-05-27 | 株式会社ディスコ | Wafer generation method |
DE102017010284A1 (en) * | 2017-11-07 | 2019-05-09 | Siltectra Gmbh | Method of thinning component-coated solid layers |
DE102017003830A1 (en) | 2017-04-20 | 2018-10-25 | Siltectra Gmbh | Process for wafer production with defined aligned modification lines |
DE102017007585A1 (en) | 2017-08-11 | 2019-02-14 | Siltectra Gmbh | Apparatus and method for pressurizing stress-generating layers to improve a separation tear |
KR20200008566A (en) * | 2017-04-20 | 2020-01-28 | 실텍트라 게엠베하 | How to reduce the thickness of the solid state layer in which the component is provided |
JP6923877B2 (en) * | 2017-04-26 | 2021-08-25 | 国立大学法人埼玉大学 | Substrate manufacturing method |
DE102017007586A1 (en) | 2017-08-11 | 2019-02-14 | Siltectra Gmbh | Manufacturing plant for separating wafers from donor substrates |
WO2019044588A1 (en) * | 2017-09-04 | 2019-03-07 | リンテック株式会社 | Thinned plate member production method and thinned plate member production device |
JP6943388B2 (en) * | 2017-10-06 | 2021-09-29 | 国立大学法人埼玉大学 | Substrate manufacturing method |
CN107731887B (en) * | 2017-11-22 | 2020-05-19 | 武汉华星光电半导体显示技术有限公司 | Preparation method of flexible OLED display panel |
DE102018001327A1 (en) * | 2018-02-20 | 2019-08-22 | Siltectra Gmbh | Method for generating short subcritical cracks in solids |
JP7256604B2 (en) * | 2018-03-16 | 2023-04-12 | 株式会社ディスコ | Nondestructive detection method |
US10940611B2 (en) | 2018-07-26 | 2021-03-09 | Halo Industries, Inc. | Incident radiation induced subsurface damage for controlled crack propagation in material cleavage |
US11309191B2 (en) | 2018-08-07 | 2022-04-19 | Siltectra Gmbh | Method for modifying substrates based on crystal lattice dislocation density |
JP7327920B2 (en) * | 2018-09-28 | 2023-08-16 | 株式会社ディスコ | Diamond substrate production method |
WO2020090894A1 (en) | 2018-10-30 | 2020-05-07 | 浜松ホトニクス株式会社 | Laser processing device and laser processing method |
JP7285067B2 (en) | 2018-10-30 | 2023-06-01 | 浜松ホトニクス株式会社 | LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD |
JP7246919B2 (en) * | 2018-12-21 | 2023-03-28 | 浜松ホトニクス株式会社 | Laser processing method, semiconductor member manufacturing method, and laser processing apparatus |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) * | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
DE102019201438B4 (en) | 2019-02-05 | 2024-05-02 | Disco Corporation | Method for producing a substrate and system for producing a substrate |
WO2020213478A1 (en) * | 2019-04-19 | 2020-10-22 | 東京エレクトロン株式会社 | Processing device and processing method |
DE102019111985A1 (en) | 2019-05-08 | 2020-11-12 | Infineon Technologies Ag | METHOD FOR MANUFACTURING SILICON CARBIDE DEVICES AND WAFER COMPOSITES CONTAINING LASER MODIFIED ZONES IN A HANDLING SUBSTRATE |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
SE1950611A1 (en) | 2019-05-23 | 2020-09-29 | Ascatron Ab | Crystal efficient SiC device wafer production |
WO2021025086A1 (en) | 2019-08-06 | 2021-02-11 | 学校法人関西学院 | SiC SUBSTRATE PRODUCTION METHOD |
DE102019122614A1 (en) | 2019-08-22 | 2021-02-25 | Infineon Technologies Ag | STARTING SUBSTRATE, WAFER COMPOSITE AND METHOD FOR MANUFACTURING CRYSTALLINE SUBSTRATES AND SEMICONDUCTOR DEVICES |
WO2021060365A1 (en) | 2019-09-27 | 2021-04-01 | 学校法人関西学院 | Method for producing semiconductor substrates and device for producing semiconductor substrates |
JPWO2021060366A1 (en) | 2019-09-27 | 2021-04-01 |
Family Cites Families (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2681472B1 (en) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL. |
JPH06124913A (en) | 1992-06-26 | 1994-05-06 | Semiconductor Energy Lab Co Ltd | Laser treatment |
JPH0929472A (en) * | 1995-07-14 | 1997-02-04 | Hitachi Ltd | Method and device for splitting and chip material |
US7176108B2 (en) * | 2002-11-07 | 2007-02-13 | Soitec Silicon On Insulator | Method of detaching a thin film at moderate temperature after co-implantation |
US7176528B2 (en) * | 2003-02-18 | 2007-02-13 | Corning Incorporated | Glass-based SOI structures |
US7052978B2 (en) | 2003-08-28 | 2006-05-30 | Intel Corporation | Arrangements incorporating laser-induced cleaving |
US20060240275A1 (en) * | 2005-04-25 | 2006-10-26 | Gadkaree Kishor P | Flexible display substrates |
JP4907984B2 (en) | 2005-12-27 | 2012-04-04 | 浜松ホトニクス株式会社 | Laser processing method and semiconductor chip |
US8835802B2 (en) * | 2006-01-24 | 2014-09-16 | Stephen C. Baer | Cleaving wafers from silicon crystals |
US20070298529A1 (en) * | 2006-05-31 | 2007-12-27 | Toyoda Gosei, Co., Ltd. | Semiconductor light-emitting device and method for separating semiconductor light-emitting devices |
US20080070340A1 (en) * | 2006-09-14 | 2008-03-20 | Nicholas Francis Borrelli | Image sensor using thin-film SOI |
US7727790B2 (en) * | 2007-01-30 | 2010-06-01 | Goldeneye, Inc. | Method for fabricating light emitting diodes |
AU2008325223A1 (en) | 2007-11-02 | 2009-05-14 | President And Fellows Of Harvard College | Production of free-standing solid state layers by thermal processing of substrates with a polymer |
CN101740331B (en) * | 2008-11-07 | 2012-01-25 | 东莞市中镓半导体科技有限公司 | Method for nondestructively peeling GaN and sapphire substrate by solid laser |
KR20100070159A (en) * | 2008-12-17 | 2010-06-25 | 삼성전자주식회사 | Th1e fabricating meth1od of wafer |
ES2418142T3 (en) * | 2008-12-23 | 2013-08-12 | Siltectra Gmbh | Procedure for producing thin independent layers of solid-state materials with structured surfaces |
KR101651206B1 (en) * | 2009-05-26 | 2016-08-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Manufacturing method of soi substrate |
CN102714150B (en) * | 2009-12-07 | 2016-01-20 | Ipg微系统有限公司 | Laser lift-off system and method |
JP5614738B2 (en) * | 2010-01-26 | 2014-10-29 | 国立大学法人埼玉大学 | Substrate processing method |
JP5479924B2 (en) | 2010-01-27 | 2014-04-23 | 浜松ホトニクス株式会社 | Laser processing method |
JP5775266B2 (en) | 2010-05-18 | 2015-09-09 | 株式会社 オプト・システム | Method for dividing wafer-like substrate |
DE102010030358B4 (en) | 2010-06-22 | 2014-05-22 | Osram Opto Semiconductors Gmbh | Method for separating a substrate wafer |
JP6121901B2 (en) * | 2010-07-12 | 2017-04-26 | ロフィン−シナー テクノロジーズ インコーポレーテッド | Material processing by laser filament formation |
JP2012096274A (en) * | 2010-11-04 | 2012-05-24 | Disco Corp | Laser processing apparatus |
RU2459691C2 (en) * | 2010-11-29 | 2012-08-27 | Юрий Георгиевич Шретер | Method of separating surface layer of semiconductor chip (versions) |
JP5480169B2 (en) * | 2011-01-13 | 2014-04-23 | 浜松ホトニクス株式会社 | Laser processing method |
US20130312460A1 (en) | 2011-02-10 | 2013-11-28 | National University Corporation Saitama University | Manufacturing method of single crystal substrate and manufacturing method of internal modified layer-forming single crystal member |
JP6004339B2 (en) | 2011-02-10 | 2016-10-05 | 信越ポリマー株式会社 | Internal stress layer forming single crystal member and single crystal substrate manufacturing method |
CN103380482B (en) * | 2011-02-10 | 2016-05-25 | 信越聚合物株式会社 | Single crystallization base plate manufacture method and inner upgrading layer form single crystals parts |
JP5950269B2 (en) * | 2011-02-10 | 2016-07-13 | 国立大学法人埼玉大学 | Substrate processing method and substrate |
RU2469433C1 (en) * | 2011-07-13 | 2012-12-10 | Юрий Георгиевич Шретер | Method for laser separation of epitaxial film or layer of epitaxial film from growth substrate of epitaxial semiconductor structure (versions) |
JP2013046924A (en) * | 2011-07-27 | 2013-03-07 | Toshiba Mach Co Ltd | Laser dicing method |
JP5917862B2 (en) * | 2011-08-30 | 2016-05-18 | 浜松ホトニクス株式会社 | Processing object cutting method |
JP5899513B2 (en) | 2012-01-12 | 2016-04-06 | パナソニックIpマネジメント株式会社 | Substrate manufacturing method and modified layer forming apparatus |
JP5843393B2 (en) | 2012-02-01 | 2016-01-13 | 信越ポリマー株式会社 | Single crystal substrate manufacturing method, single crystal substrate, and internal modified layer forming single crystal member manufacturing method |
JP5995045B2 (en) | 2012-02-06 | 2016-09-21 | 信越ポリマー株式会社 | Substrate processing method and substrate processing apparatus |
US9214353B2 (en) | 2012-02-26 | 2015-12-15 | Solexel, Inc. | Systems and methods for laser splitting and device layer transfer |
CN202655797U (en) * | 2012-05-18 | 2013-01-09 | 杭州士兰明芯科技有限公司 | System for laser lift-off of LED (Light Emitting Diode) substrate |
CN102664221B (en) * | 2012-05-18 | 2015-05-27 | 杭州士兰明芯科技有限公司 | Light-emitting diode (LED) substrate lift-off method |
EP2754524B1 (en) * | 2013-01-15 | 2015-11-25 | Corning Laser Technologies GmbH | Method of and apparatus for laser based processing of flat substrates being wafer or glass element using a laser beam line |
WO2014113503A1 (en) * | 2013-01-16 | 2014-07-24 | QMAT, Inc. | Techniques for forming optoelectronic devices |
DE112014001676B4 (en) | 2013-03-27 | 2024-06-06 | Hamamatsu Photonics K.K. | Laser processing device and laser processing method |
DE102013007672A1 (en) * | 2013-05-03 | 2014-11-06 | Siltectra Gmbh | Process and apparatus for wafer production with predefined breakaway release point |
CN103380842B (en) | 2013-08-09 | 2015-03-18 | 山西省农业科学院经济作物研究所 | Method for preparing health care morning tea by utilizing whole plant powder of mung beans |
JP6531885B2 (en) * | 2013-10-07 | 2019-06-19 | 信越ポリマー株式会社 | Internally processed layer forming single crystal member and method of manufacturing the same |
DE102014013107A1 (en) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Novel wafer manufacturing process |
DE102015000449A1 (en) * | 2015-01-15 | 2016-07-21 | Siltectra Gmbh | Solid body distribution by means of material conversion |
WO2016083610A2 (en) | 2014-11-27 | 2016-06-02 | Siltectra Gmbh | Splitting of a solid using conversion of material |
EP4234156A3 (en) * | 2014-11-27 | 2023-10-11 | Siltectra GmbH | Laser based slicing method |
US11309191B2 (en) * | 2018-08-07 | 2022-04-19 | Siltectra Gmbh | Method for modifying substrates based on crystal lattice dislocation density |
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2015
- 2015-11-27 WO PCT/EP2015/077981 patent/WO2016083610A2/en active Application Filing
- 2015-11-27 EP EP18178276.4A patent/EP3399542B1/en active Active
- 2015-11-27 CN CN201810563830.3A patent/CN108838562B/en active Active
- 2015-11-27 US US15/531,329 patent/US11407066B2/en active Active
- 2015-11-27 MY MYPI2017701927A patent/MY174094A/en unknown
- 2015-11-27 EP EP18175761.8A patent/EP3395489A1/en active Pending
- 2015-11-27 KR KR1020187014524A patent/KR20180059569A/en active Application Filing
- 2015-11-27 SG SG11201704275UA patent/SG11201704275UA/en unknown
- 2015-11-27 KR KR1020237033908A patent/KR20230145246A/en active Search and Examination
- 2015-11-27 CN CN201580064710.3A patent/CN107107260B/en active Active
- 2015-11-27 CN CN201810564712.4A patent/CN108857049A/en active Pending
- 2015-11-27 KR KR1020177017549A patent/KR101864558B1/en active IP Right Grant
- 2015-11-27 EP EP22195120.5A patent/EP4122633A1/en active Pending
- 2015-11-27 JP JP2016570350A patent/JP6396505B2/en active Active
- 2015-11-27 EP EP15801449.8A patent/EP3223993A2/en not_active Withdrawn
- 2015-11-27 EP EP20151833.9A patent/EP3666445B1/en active Active
- 2015-11-27 KR KR1020207001035A patent/KR20200006641A/en not_active IP Right Cessation
- 2015-11-27 KR KR1020227014422A patent/KR102587022B1/en active IP Right Grant
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2018
- 2018-05-08 JP JP2018090077A patent/JP6748144B2/en active Active
- 2018-06-08 US US16/003,221 patent/US11833617B2/en active Active
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2023
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EP3399542A1 (en) | 2018-11-07 |
CN108838562B (en) | 2021-08-17 |
JP2017526161A (en) | 2017-09-07 |
CN108857049A (en) | 2018-11-23 |
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WO2016083610A3 (en) | 2016-09-22 |
US11833617B2 (en) | 2023-12-05 |
KR102587022B1 (en) | 2023-10-10 |
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