CN108372434B - SiC晶片的生成方法 - Google Patents
SiC晶片的生成方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000000853 adhesive Substances 0.000 claims abstract description 14
- 230000001070 adhesive effect Effects 0.000 claims abstract description 14
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 4
- 238000004299 exfoliation Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 102
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 69
- 229910010271 silicon carbide Inorganic materials 0.000 description 69
- 239000010410 layer Substances 0.000 description 49
- 238000002679 ablation Methods 0.000 description 3
- 229920006332 epoxy adhesive Polymers 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004830 Super Glue Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- FGBJXOREULPLGL-UHFFFAOYSA-N ethyl cyanoacrylate Chemical compound CCOC(=O)C(=C)C#N FGBJXOREULPLGL-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
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- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
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- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L33/005—Processes
Abstract
提供晶片生成方法,其能够经济地从单晶SiC晶锭生成晶片。一种SiC晶片的生成方法,其包括下述工序:端面平坦化工序,使晶锭(2)的端面平坦化;剥离层形成工序,将对于单晶SiC具有透过性的波长的激光光线(LB)的聚光点(FP)定位在距离晶锭(2)的端面相当于要生成的SiC晶片的厚度的深度,对晶锭(2)照射激光光线(LB),形成将晶片剥离的剥离层(42);硬板配设工序,利用粘接剂将硬板(44)配设于形成有剥离层(42)的晶锭(2)的端面;和剥离工序,将SiC晶片(58)与硬板(44)一同从晶锭(2)的剥离层(42)剥离。
Description
技术领域
本发明涉及一种晶片生成方法,其从单晶SiC晶锭生成晶片。
背景技术
IC、LSI、LED等器件是在以Si(硅)、Al2O3(蓝宝石)等为原材料的晶片的正面上层叠功能层并通过分割预定线进行划分而形成的。另外,功率器件、LED等是在以单晶SiC(碳化硅)为原材料的晶片的正面上层叠功能层并通过分割预定线进行划分而形成的。形成有器件的晶片通过切削装置、激光加工装置对分割预定线实施加工而分割成各个器件,分割得到的各器件被用于移动电话、个人计算机等电子设备中。
形成器件的晶片通常是通过利用划片锯将圆柱形状的晶锭薄薄地切断而生成的。切断得到的晶片的正面和背面通过研磨而精加工成镜面(参见专利文献1)。但是,在利用划片锯将晶锭切断并对切断得到的晶片的正面和背面进行研磨时,晶锭的大部分(70%~80%)会被浪费,存在不经济的问题。特别是在单晶SiC晶锭中,其硬度高,难以利用划片锯进行切断,需要花费相当长的时间,因而生产率差,并且晶锭的单价高,在高效地生成晶片方面存在问题。
因此,有人提出了下述技术:将波长对于单晶SiC具有透过性的激光光线的聚光点定位在单晶SiC晶锭的内部来对单晶SiC晶锭照射激光光线,从而在切断预定面上形成改质层,沿着形成有改质层的切断预定面将SiC晶片从单晶SiC晶锭剥离(参见专利文献2)。
现有技术文献
专利文献
专利文献1:日本特开2000-94221号公报
专利文献2:日本特开2013-49161号公报
发明内容
发明所要解决的课题
但是,在将晶片从晶锭剥离时、或者在晶片的正面形成器件时,为了使晶片具有强度而将从单晶SiC晶锭剥离的SiC晶片的厚度设定为700~800μm的程度,在将SiC晶片分割成各个器件时,为了改善散热性而将SiC晶片的背面磨削500~600μm的程度,将SiC晶片的厚度减薄至100μm左右,因而在更经济地生成SiC晶片的方面存在要解决的问题。
由此,本发明的目的在于提供一种SiC晶片的生成方法,其能够经济地从单晶SiC晶锭生成SiC晶片。
用于解决课题的手段
根据本发明,提供一种晶片生成方法,其为从单晶SiC晶锭生成SiC晶片的SiC晶片的生成方法,该晶片生成方法具备下述工序:端面平坦化工序,使单晶SiC晶锭的端面平坦化;剥离层形成工序,在实施该端面平坦化工序后,将波长对于单晶SiC具有透过性的激光光线的聚光点定位在距离单晶SiC晶锭的端面相当于要生成的SiC晶片的厚度的深度,对单晶SiC晶锭照射激光光线,形成将SiC晶片剥离的剥离层;硬板配设工序,利用粘接剂将硬板配设于形成有剥离层的单晶SiC晶锭的端面;剥离工序,在实施该硬板配设工序后,将SiC晶片与该硬板一同从单晶SiC晶锭的剥离层剥离;剥离面平坦化工序,使从单晶SiC晶锭剥离的SiC晶片的剥离面平坦化;和器件形成工序,在平坦化后的剥离面形成器件。
优选的是,单晶SiC晶锭具有:第一面;该第一面的相反侧的第二面;从该第一面至该第二面且相对于该第一面的垂线倾斜的c轴;和与该c轴垂直的c面,由该c面和该第一面形成偏离角,在该剥离层形成工序中,将波长对于单晶SiC具有透过性的激光光线的聚光点定位在距离该第一面相当于SiC晶片的厚度的深度,并且在与形成该偏离角的第2方向垂直的第1方向上使单晶SiC晶锭和该聚光点相对地移动,形成直线状的改质层和裂纹,该直线状的改质层是SiC分离成Si和C、接下来照射的激光光线被之前形成的C吸收而将SiC连锁性地分离成Si和C所形成的,在形成该偏离角的方向上使单晶SiC晶锭和该聚光点相对地移动,转位规定量,形成剥离层。
发明效果
本发明的SiC晶片的生成方法利用硬板对SiC晶片进行增强,从而无需为了防止在将SiC晶片从单晶SiC晶锭剥离时或在SiC晶片的正面形成器件时等的SiC晶片的损伤而使SiC晶片的厚度较厚为700~800μm的程度来使SiC晶片具有强度,即便SiC晶片的厚度较薄为200μm左右,也能防止在将SiC晶片从单晶SiC晶锭剥离时或在SiC晶片的正面形成器件时等的SiC晶片的损伤。
因此,在本发明的SiC晶片的生成方法中,能够使从单晶SiC晶锭剥离的SiC晶片的厚度较薄为200μm左右,因而能够削减为了改善散热性而将SiC晶片薄化时被磨削(被舍弃)的量,并且能够增大能够从单晶SiC晶锭生成的晶片数量,能够更经济地从单晶SiC晶锭生成SiC晶片。
附图说明
图1是单晶SiC晶锭的主视图(a)、俯视图(b)和立体图(c)。
图2是示出实施端面平坦化工序的状态的立体图。
图3是示出实施剥离层形成工序的状态的立体图(a)和主视图(b)。
图4是形成有剥离层的单晶SiC晶锭的俯视图(a)、B-B线剖视图(b)和D部放大图(c)。
图5是示出实施硬板配设工序的状态的立体图。
图6是示出实施剥离工序的状态的立体图(a)以及与硬板一同被剥离的晶片的立体图(b)。
图7是示出实施剥离面平坦化工序的状态的立体图。
图8是形成有器件的晶片的立体图。
图9是示出实施分割工序的状态的立体图。
图10是分割成各个器件的晶片的立体图。
具体实施方式
以下,参照附图对本发明的晶片生成方法的实施方式进行说明。
图1所示的整体为圆柱形状的六方晶单晶SiC晶锭2(以下称为“晶锭2”)具有:圆形状的第一面4;第一面4的相反侧的圆形状的第二面6;位于第一面4和第二面6之间的周面8;从第一面4至第二面6的c轴(<0001>方向);和与c轴垂直的c面({0001}面)。在图示的晶锭2中,c轴相对于第一面4的垂线10倾斜,由c面和第一面4形成偏离角α(例如α=1、3、6度)。在图1中用箭头A表示形成偏离角α的方向。另外,在晶锭2的周面8上形成有表示晶体取向的矩形状的第一定向平面12和第二定向平面14。第一定向平面12与形成偏离角α的方向A平行,第二定向平面14与形成偏离角α的方向A垂直。如在图1的(b)中所示的那样,在垂线10的方向上观察,第二定向平面14的长度L2比第一定向平面12的长度L1短(L2<L1)。
在本实施方式中,首先实施使晶锭2的端面平坦化的端面平坦化工序。端面平坦化工序例如可以使用在图2中示出其一部分的磨削装置16来实施。磨削装置16具备卡盘工作台18和磨削单元20。构成为在上表面吸附被加工物的卡盘工作台18利用旋转单元(未图示)以沿上下方向延伸的轴线为中心进行旋转。磨削单元20与电动机(未图示)连结,并且包括沿上下方向延伸的圆柱状的主轴22和固定于主轴22的下端的圆盘状的磨轮安装座24。在磨轮安装座24的下表面利用螺栓26固定有环状的磨削磨轮28。在磨削磨轮28的下表面的外周边缘部固定有在圆周方向隔开间隔以环状配置的多个磨削磨具30。如图2所示,磨削磨轮28的旋转中心相对于卡盘工作台18的旋转中心位移成磨削磨具30通过卡盘工作台18的旋转中心。因此,一边使卡盘工作台18与磨削磨轮28相互旋转,一边使保持于卡盘工作台18的上表面的被加工物的上表面与磨削磨具30接触的情况下,被加工物的整个上表面被磨削磨具30磨削。
继续参照图2进行说明,在端面平坦化工序中,首先使所要磨削的晶锭2的端面(图示的实施方式中为第一面4)朝上,使晶锭2吸附于磨削装置16的卡盘工作台18的上表面。或者,也可以使粘接剂(例如环氧树脂系粘接剂)介于所要磨削的晶锭2的端面的相反侧的端面(图示的实施方式中为第二面6)与卡盘工作台18的上表面之间,将晶锭2固定于卡盘工作台18。接着,按照从上方观察时为逆时针的方式,利用旋转单元使卡盘工作台18以规定的旋转速度(例如300rpm)进行旋转。另外,按照从上方观察时为逆时针的方式,利用电动机使主轴22以规定的旋转速度(例如6000rpm)进行旋转。接着,利用磨削装置16的升降单元(未图示)使主轴22下降,使磨削磨具30与所要磨削的晶锭2的端面接触。在使磨削磨具30与所要磨削的晶锭2的端面接触后,以规定的磨削进给速度(例如0.1μm/s)使主轴22下降。由此,能够使晶锭2的端面平坦化。
在实施端面平坦化工序后,实施剥离层形成工序:形成将晶片剥离的剥离层。剥离层形成工序例如可以使用在图3中示出其一部分的激光加工装置32来实施。激光加工装置32具备卡盘工作台34和聚光器36。构成为在上表面吸附被加工物的卡盘工作台34利用旋转单元以沿上下方向延伸的轴线为中心进行旋转,并且利用X方向移动单元在X方向上进退,利用Y方向移动单元在Y方向上进退(均未图示)。聚光器36包含聚光透镜,该聚光透镜用于对由激光加工装置12的脉冲激光光线振荡器所振荡出的脉冲激光光线LB进行会聚,并照射至被加工物(均未图示)。需要说明的是,X方向是图3中箭头X所示的方向,Y方向是图3中箭头Y所示的方向,是与X方向垂直的方向。X方向和Y方向所规定的平面实际上是水平的。
继续参照图3进行说明,在剥离面形成工序中,首先使晶锭2的平坦化后的端面(本实施方式中为第一面4)朝上,使晶锭2吸附于激光加工装置32的卡盘工作台34的上表面。或者,也可以使粘接剂(例如环氧树脂系粘接剂)介于晶锭2的平坦化后的端面的相反侧的端面(图示的实施方式中为第二面6)与卡盘工作台34的上表面之间,将晶锭2固定于卡盘工作台34。接着,利用激光加工装置32的拍摄单元(未图示),从晶锭2的平坦化后的端面的上方对晶锭2进行拍摄。接着,根据拍摄单元所拍摄的晶锭2的图像,利用激光加工装置32的X方向移动单元、Y方向移动单元和旋转单元使卡盘工作台34移动和旋转,由此将晶锭2的朝向调整为规定的朝向,并且对晶锭2和聚光器36在XY平面中的位置进行调整。将晶锭2的朝向调整为规定的朝向时,如图3的(a)所示,通过使第一定向平面12与Y方向一致,并且使第二定向平面14与X方向一致,从而使形成偏离角α的方向A与Y方向一致,并且使与形成偏离角α的方向A垂直的方向与X方向一致。接着,利用激光加工装置32的聚光点位置调整单元(未图示)使聚光器36升降,如图3的(b)所示那样,将聚光点FP定位在距离晶锭2的平坦化后的端面相当于要生成的晶片的厚度的深度(例如200μm左右)的位置。接着,进行改质层形成加工,一边使晶锭2和聚光点FP在与垂直于形成偏离角α的方向A的方向一致的X方向上相对地移动,一边将波长对于单晶SiC具有透过性的脉冲激光光线LB从聚光器36照射至晶锭2。如图3所示,在本实施方式中,在改质层形成加工中,不使聚光点FP移动,而利用X方向移动单元使卡盘工作台34以规定的加工进给速度相对于聚光点FP在X方向进行加工进给,同时将脉冲激光光线LB从聚光器36照射至晶锭2。
在进行改质层形成加工时,如图4所示,形成直线状的改质层38和从改质层38沿着c面向改质层38的两侧传播的裂纹40,其中,随着脉冲激光光线LB的照射,SiC分离成Si(硅)和C(碳),接下来照射的脉冲激光光线LB被之前形成的C吸收,SiC连锁性地分离成Si和C而形成直线状的改质层38,并且形成从改质层38沿着c面向改质层38的两侧传播的裂纹40。需要说明的是,在改质层形成加工中,在形成改质层38的深度,按照相邻的脉冲激光光线LB的光斑相互重叠的方式向使晶锭2和聚光点FP在X方向上相对地进行加工进给的同时对晶锭2照射脉冲激光光线LB而分离出Si和C的改质层38再次照射脉冲激光光线LB。为了使相邻的光斑相互重叠,由脉冲激光光线LB的重复频率F、晶锭2与聚光点FP的相对速度V和光斑的直径D所规定的G=(V/F)-D需要为G<0。另外,相邻的光斑的重叠率由|G|/D来规定。
继续参照图3和图4进行说明,在剥离层形成工序中,接着改质层形成加工继续在与形成偏离角α的方向A一致的Y方向上使晶锭2和聚光点FP按照规定的转位量相对地进行转位进给。在本实施方式中,不使聚光点FP移动,而利用Y方向移动单元使卡盘工作台34相对于聚光点FP在Y方向上按照规定的转位量Li进行转位进给。并且,通过在剥离层形成工序中交替地重复改质层形成加工和转位进给,如图4所示,能够在距离晶锭2的平坦化后的端面相当于要生成的晶片的厚度的深度形成由2个以上的改质层38和裂纹40构成的、用于将晶片从晶锭2剥离的剥离层42。在剥离层42中,在形成偏离角α的方向A上相邻的改质层38彼此通过裂纹40连结。这样的剥离层形成工序例如可以在下述加工条件下实施。
参照图5进行说明。在实施剥离层形成工序后,实施硬板配设工序:借助粘接剂将硬板44配设于形成有剥离层42的晶锭2的平坦化后的端面(本实施方式中为第一面4)。作为硬板配设工序中使用的硬板44,例如可以使用厚度为5mm左右的圆盘状的玻璃板、陶瓷板、合成树脂板(聚对苯二甲酸乙二醇酯(PET)或亚克力等),硬板44的材质可根据在实施硬板配设工序后进行的各种工序适当选择。与晶锭2的平坦化后的端面接触的硬板44的面优选与晶锭2的平坦化后的端面为基本相同的形状,或者为比晶锭2的平坦化后的端面大的形状。另外,硬板配设工序中使用的粘接剂可以为氰基丙烯酸酯系粘接剂(例如东亚合成株式会社的Aron Alpha(注册商标))。
在实施硬板配设工序后,实施剥离工序:将晶片与硬板44一同从晶锭2的剥离层42剥离。剥离工序例如可以使用在图6的(a)中示出其一部分的剥离装置46来实施。剥离装置46具备卡盘工作台48和剥离单元50。卡盘工作台48构成为在上表面吸附被加工物。剥离单元50包含实质上水平延伸的臂52和附设于臂52的前端的电动机54。在电动机54的下表面连结有圆盘状的吸附片56,该吸附片56以沿上下方向延伸的轴线为中心进行自由旋转。在构成为在下表面吸附被加工物的吸附片56中内设有对吸附片56的下表面施加超声波振动的超声波振动施加单元(未图示)。
继续参照图6进行说明,在剥离工序中,首先使配设有硬板44的晶锭2的端面侧(图示的实施方式中为第一面4侧)朝上,使晶锭2吸附于剥离装置46的卡盘工作台48的上表面。或者,也可以使粘接剂(例如环氧树脂系粘接剂)介于配设有硬板44的晶锭2的端面的相反侧的端面(本实施方式中为第二面6)与卡盘工作台48的上表面之间,将晶锭2固定于卡盘工作台48。接着,利用剥离装置46的升降单元(未图示)使臂52下降,如图6的(a)所示,使吸附片56的下表面吸附于硬板44的单面。接着,使超声波振动施加单元工作,对吸附片56的下表面施加超声波振动,并且使电动机54工作而使吸附片56旋转。由此,能够将晶片58与硬板44一同从晶锭2的剥离层42剥离。图6的(b)中示出使与硬板44一同从晶锭2的剥离层42剥离的晶片58的剥离面58a朝上的状态下的晶片58的立体图。
参照图7进行说明。在实施剥离工序后,实施剥离面平坦化工序:使从晶锭2剥离的晶片58的剥离面58a平坦化。能够使用上述磨削装置16实施的剥离面平坦化工序在将硬板44与晶片58粘接的状态下实施。在磨削工序中,首先使从晶锭2剥离的晶片58的剥离面58a朝上(即,使硬板44侧朝下),使晶片58和硬板44吸附于磨削装置16的卡盘工作台18的上表面。或者,也可以使粘接剂(例如环氧树脂系粘接剂)介于硬板44的单面与卡盘工作台18的上表面之间,将晶片58和硬板44固定于卡盘工作台18。接着,按照从上方观察时为逆时针的方式,利用旋转单元使卡盘工作台18以规定的旋转速度(例如300rpm)进行旋转。并且,按照从上方观察时为逆时针的方式,利用电动机使主轴22以规定的旋转速度(例如6000rpm)进行旋转。接着,利用磨削装置16的升降单元(未图示)使主轴22下降,使磨削磨具30与晶片58的剥离面58a接触。在使磨削磨具30与晶片58的剥离面58a接触后,以规定的磨削进给速度(例如0.1μm/s)使主轴22下降。由此,能够使从晶锭2剥离的晶片58的剥离面58a平坦化。
参照图8进行说明。在实施剥离面平坦化工序后,实施器件形成工序:在晶片58的平坦化后的剥离面58a形成功率器件、LED等器件60。器件形成工序在使硬板44粘接于晶片58的状态下实施。在图示的实施方式中,如图8所示,在晶片58的平坦化后的剥离面58a所形成的矩形状的器件60被格子状的分割预定线62所划分。
参照图9进行说明。在本实施方式中,在实施剥离面平坦化工序后,实施分割工序:将晶片58分割成各个器件60。能够使用上述激光加工装置32实施的分割工序在将硬板44与晶片58粘接的状态下实施。在分割工序中,首先使形成有器件60的晶片58的剥离面58a朝上(即,使硬板44侧朝下),使晶片58和硬板44吸附于激光加工装置32的卡盘工作台34的上表面。或者,也可以使粘接剂(例如环氧树脂系粘接剂)介于硬板44的单面与卡盘工作台34的上表面之间,将晶片58和硬板44固定于卡盘工作台34。接着,利用激光加工装置32的拍摄单元从上方对晶片58进行拍摄。接着,根据拍摄单元所拍摄的晶片58的图像,利用激光加工装置32的X方向移动单元、Y方向移动单元和旋转单元使卡盘工作台34移动和旋转,由此使格子状的分割预定线62与X方向和Y方向一致,并且将与X方向一致的位置的分割预定线62的一端部定位在聚光器36的正下方。接着,利用激光加工装置32的聚光点位置调整单元使聚光器36升降,将聚光点FP定位在晶片58的分割预定线62上。接着,实施烧蚀加工等分割加工:一边使晶片58和聚光点FP在X方向上相对地移动,一边从聚光器36对晶片58的分割预定线62的一端部至另一端部照射对于单晶SiC具有吸收性的脉冲激光光线LB。
在本实施方式中,在分割加工中,不使聚光点FP移动,而利用X方向移动单元使卡盘工作台34以规定的加工进给速度相对于聚光点FP在X方向进行加工进给,同时将脉冲激光光线LB从聚光器36照射至晶片58。接着,使晶片58和聚光点FP相对地在Y方向上按照分割预定线62的间隔的量进行转位进给。在本实施方式中,不使聚光点FP移动,而利用Y方向移动单元使卡盘工作台34相对于聚光点FP在Y方向上按照分割预定线62的间隔的量进行转位进给。并且,通过交替地重复烧蚀加工等分割加工和转位进给,对与X方向一致的所有分割预定线62实施分割加工。另外,利用旋转单元使卡盘工作台34旋转90度,并交替地重复烧蚀加工等分割加工和转位进给,由此也对与之前实施了分割加工的分割预定线62垂直的所有分割预定线62实施分割加工。由此,能够将晶片58分割成各个器件60。沿着晶片58的分割预定线62以格子状实施了分割加工的部分(加工线)用符号64表示。
参照图10进行说明。在本实施方式中,在实施分割工序后,实施对各个器件60进行拾取的拾取工序。在拾取工序中,例如使硬板44侧朝下地将晶片58和硬板44搭载于加热板(未图示)来进行加热。由此,介于晶片58与硬板44之间的粘接剂熔融,粘接力下降,因而能够利用适当的拾取单元(未图示)从硬板44来拾取各个器件60。
如上所述,在本发明的晶片生成方法中,利用硬板44对晶片58进行了增强,因而无需为了防止在将晶片58从晶锭2剥离时或在晶片58的正面形成器件60时等的晶片58的损伤而使晶片58的厚度较厚为700~800μm的程度来使晶片58具有强度,即便晶片58的厚度较薄为200μm左右,也能防止在将晶片58从晶锭2剥离时或在晶片58的正面形成器件60时等的晶片58的损伤。因此,在本发明的晶片生成方法中,能够使从晶锭2剥离的晶片58的厚度较薄为200μm左右,因而能够削减为了改善散热性而将晶片58薄化时被磨削(被舍弃)的量,并且能够增大能够从晶锭2生成的晶片数量,能够更经济地从晶锭2生成晶片58。
需要说明的是,在本实施方式中,对于在剥离层形成工序的改质层形成加工中在与形成偏离角α的方向A垂直的方向上使晶锭2和聚光点FP相对地移动、并且在剥离层形成工序的转位进给中在形成偏离角α的方向A上使晶锭2和聚光点FP相对地移动的例子进行了说明,但剥离层形成工序的改质层形成加工中的晶锭2和聚光点FP的相对移动方向也可以不是与形成偏离角α的方向A垂直的方向,并且剥离层形成工序的转位进给中的晶锭2与聚光点FP的相对移动方向也可以不是形成偏离角α的方向A。另外,在本实施方式中,对于c轴相对于第一面4的垂线10倾斜、由c面和第一面4形成有偏离角α的晶锭2的例子进行了说明,但在c轴相对于第一面的垂线不倾斜、c面与第一面的偏离角为0度(即,第一面的垂线与c轴一致)的单晶SiC晶锭的情况下,也能够实施本发明的晶片生成方法。
符号说明
2:单晶SiC晶锭
4:第一面(端面)
6:第二面
38:改质层
40:裂纹
42:剥离层
44:硬板
58:晶片
58a:剥离面
60:器件
α:偏离角
A:形成偏离角的方向
FP:聚光点
LB:脉冲激光光线
Claims (2)
1.一种晶片生成方法,其为从单晶SiC晶锭生成SiC晶片的SiC晶片的生成方法,
该晶片生成方法具备下述工序:
端面平坦化工序,使单晶SiC晶锭的端面平坦化;
剥离层形成工序,在实施该端面平坦化工序后,将波长对于单晶SiC具有透过性的激光光线的聚光点定位在距离单晶SiC晶锭的端面相当于要生成的SiC晶片的厚度的深度,对单晶SiC晶锭照射激光光线,形成将SiC晶片剥离的剥离层;
硬板配设工序,利用粘接剂将硬板配设于形成有剥离层的单晶SiC晶锭的端面;
剥离工序,将SiC晶片与该硬板配设工序中配设的硬板一同从单晶SiC晶锭的剥离层剥离;
剥离面平坦化工序,通过磨削加工使从单晶SiC晶锭剥离的SiC晶片的剥离面平坦化;和
器件形成工序,在平坦化后的剥离面形成器件,
在将该硬板配设工序中配设的硬板安装在SiC晶片的状态下实施该剥离面平坦化工序和该器件形成工序。
2.如权利要求1所述的晶片生成方法,其中,单晶SiC晶锭具有:第一面;该第一面的相反侧的第二面;从该第一面至该第二面且相对于该第一面的垂线倾斜的c轴;和与该c轴垂直的c面,由该c面和该第一面形成偏离角,
在该剥离层形成工序中,
将波长对于单晶SiC具有透过性的激光光线的聚光点定位在距离该第一面相当于SiC晶片的厚度的深度,并且在与形成该偏离角的第2方向垂直的第1方向上使单晶SiC晶锭和该聚光点相对地移动,形成直线状的改质层和裂纹,该直线状的改质层是SiC分离成Si和C、接下来照射的激光光线被之前形成的C吸收而将SiC连锁性地分离成Si和C所形成的,在形成该偏离角的方向上使单晶SiC晶锭和该聚光点相对地移动,转位规定量,形成剥离层。
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JP7164396B2 (ja) * | 2018-10-29 | 2022-11-01 | 株式会社ディスコ | ウエーハ生成装置 |
JP7166893B2 (ja) * | 2018-11-21 | 2022-11-08 | 株式会社ディスコ | ウエーハの生成方法 |
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US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) * | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
JP7308652B2 (ja) * | 2019-04-26 | 2023-07-14 | 株式会社ディスコ | デバイスチップの製造方法 |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
JP7330771B2 (ja) * | 2019-06-14 | 2023-08-22 | 株式会社ディスコ | ウエーハの生成方法およびウエーハの生成装置 |
JP7259795B2 (ja) * | 2020-03-31 | 2023-04-18 | 株式会社デンソー | 炭化珪素ウェハの製造方法、半導体基板の製造方法および炭化珪素半導体装置の製造方法 |
CN113714650A (zh) * | 2021-08-25 | 2021-11-30 | 大族激光科技产业集团股份有限公司 | 晶片的制造方法 |
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