SG10201800388UA - SiC WAFER PRODUCING METHOD - Google Patents

SiC WAFER PRODUCING METHOD

Info

Publication number
SG10201800388UA
SG10201800388UA SG10201800388UA SG10201800388UA SG10201800388UA SG 10201800388U A SG10201800388U A SG 10201800388UA SG 10201800388U A SG10201800388U A SG 10201800388UA SG 10201800388U A SG10201800388U A SG 10201800388UA SG 10201800388U A SG10201800388U A SG 10201800388UA
Authority
SG
Singapore
Prior art keywords
ingot
wafer
producing method
end surface
separation layer
Prior art date
Application number
SG10201800388UA
Inventor
Hirata Kazuya
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201800388UA publication Critical patent/SG10201800388UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

SiC WAFER PRODUCING METHOD Disclosed herein is an SiC wafer producing method for producing a wafer from an ingot of single crystal SiC. The SiC wafer producing method includes an end surface planarizing step of planarizing an end surface of the ingot, a separation layer forming step of setting a focal point of a laser beam having a transmission wavelength to single crystal SiC inside the ingot at a predetermined depth from the end surface of the ingot, the predetermined depth corresponding to the thickness of the wafer to be produced, and next applying the laser beam to the ingot to thereby form a separation layer for separating the wafer from the ingot, a hard plate providing step of providing a hard plate through an adhesive on the end surface of the ingot in which the separation layer has been formed, and a separating step of separating the wafer with the hard plate from the ingot along the separation layer. (Figure 6A)
SG10201800388UA 2017-01-31 2018-01-16 SiC WAFER PRODUCING METHOD SG10201800388UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017015742A JP6781639B2 (en) 2017-01-31 2017-01-31 Wafer generation method

Publications (1)

Publication Number Publication Date
SG10201800388UA true SG10201800388UA (en) 2018-08-30

Family

ID=62843042

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201800388UA SG10201800388UA (en) 2017-01-31 2018-01-16 SiC WAFER PRODUCING METHOD

Country Status (8)

Country Link
US (1) US10573505B2 (en)
JP (1) JP6781639B2 (en)
KR (1) KR102287126B1 (en)
CN (1) CN108372434B (en)
DE (1) DE102018201298B4 (en)
MY (1) MY181614A (en)
SG (1) SG10201800388UA (en)
TW (1) TWI724273B (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7009194B2 (en) * 2017-12-12 2022-01-25 株式会社ディスコ Wafer generator and transport tray
JP7083572B2 (en) * 2018-04-09 2022-06-13 株式会社ディスコ Wafer processing method
JP7083573B2 (en) * 2018-04-09 2022-06-13 株式会社ディスコ Wafer processing method
JP7187215B2 (en) * 2018-08-28 2022-12-12 株式会社ディスコ SiC substrate processing method
JP7201367B2 (en) * 2018-08-29 2023-01-10 株式会社ディスコ SiC substrate processing method
JP7164396B2 (en) * 2018-10-29 2022-11-01 株式会社ディスコ wafer generator
JP7166893B2 (en) * 2018-11-21 2022-11-08 株式会社ディスコ Wafer generation method
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) * 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
JP7308652B2 (en) * 2019-04-26 2023-07-14 株式会社ディスコ Device chip manufacturing method
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP7330771B2 (en) * 2019-06-14 2023-08-22 株式会社ディスコ Wafer production method and wafer production apparatus
JP7259795B2 (en) * 2020-03-31 2023-04-18 株式会社デンソー Silicon carbide wafer manufacturing method, semiconductor substrate manufacturing method, and silicon carbide semiconductor device manufacturing method
CN113714649B (en) * 2021-08-25 2023-07-14 深圳市大族半导体装备科技有限公司 Method for manufacturing wafer
CN113714650A (en) * 2021-08-25 2021-11-30 大族激光科技产业集团股份有限公司 Method for manufacturing wafer
JP2023083924A (en) * 2021-12-06 2023-06-16 株式会社ディスコ Wafer generation method and wafer generation device
CN115971642A (en) * 2022-12-30 2023-04-18 山东天岳先进科技股份有限公司 Silicon carbide stripping sheet based on laser induced cracking and processing method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000094221A (en) 1998-09-24 2000-04-04 Toyo Advanced Technologies Co Ltd Electric discharge wire saw
JP2009290148A (en) * 2008-06-02 2009-12-10 Disco Abrasive Syst Ltd Method of dividing wafer
JP5645593B2 (en) * 2010-10-21 2014-12-24 株式会社ディスコ Wafer division method
JP6004338B2 (en) * 2011-02-10 2016-10-05 信越ポリマー株式会社 Single crystal substrate manufacturing method and internal modified layer forming single crystal member
WO2012108054A1 (en) * 2011-02-10 2012-08-16 信越ポリマー株式会社 Production method for monocrystalline substrate and production method for monocrystalline member with modified layer formed therein
JP5917862B2 (en) 2011-08-30 2016-05-18 浜松ホトニクス株式会社 Processing object cutting method
JP5607847B1 (en) * 2013-11-29 2014-10-15 古河電気工業株式会社 Adhesive tape for semiconductor processing
JP2015223589A (en) 2014-05-26 2015-12-14 株式会社ディスコ METHOD FOR PRODUCTION OF SiC PLATE-LIKE WORKPIECE
JP6399913B2 (en) * 2014-12-04 2018-10-03 株式会社ディスコ Wafer generation method
JP6395613B2 (en) * 2015-01-06 2018-09-26 株式会社ディスコ Wafer generation method
JP6395634B2 (en) * 2015-02-09 2018-09-26 株式会社ディスコ Wafer generation method
JP6456228B2 (en) * 2015-04-15 2019-01-23 株式会社ディスコ Thin plate separation method
JP6472333B2 (en) * 2015-06-02 2019-02-20 株式会社ディスコ Wafer generation method
JP6552898B2 (en) * 2015-07-13 2019-07-31 株式会社ディスコ Method for producing polycrystalline SiC wafer
JP6562819B2 (en) * 2015-11-12 2019-08-21 株式会社ディスコ Method for separating SiC substrate
CN105436710B (en) * 2015-12-30 2019-03-05 大族激光科技产业集团股份有限公司 A kind of laser-stripping method of Silicon Wafer

Also Published As

Publication number Publication date
CN108372434A (en) 2018-08-07
JP2018125390A (en) 2018-08-09
TW201829862A (en) 2018-08-16
DE102018201298A1 (en) 2018-08-02
KR102287126B1 (en) 2021-08-05
TWI724273B (en) 2021-04-11
US20180218896A1 (en) 2018-08-02
CN108372434B (en) 2021-09-07
DE102018201298B4 (en) 2020-11-12
KR20200067243A (en) 2020-06-12
US10573505B2 (en) 2020-02-25
MY181614A (en) 2020-12-29
JP6781639B2 (en) 2020-11-04

Similar Documents

Publication Publication Date Title
SG10201800388UA (en) SiC WAFER PRODUCING METHOD
SG10201803304XA (en) SiC WAFER PRODUCING METHOD
SG10201709401QA (en) SiC WAFER PRODUCING METHOD
SG10201709843YA (en) SiC WAFER PRODUCING METHOD
MY180538A (en) Wafer producing method
MY175831A (en) Wafer producing method
SG10201804286QA (en) Wafer producing apparatus
MY186677A (en) Sic wafer producing method
MY176317A (en) Polycrystalline sic wafer producing method
MY188444A (en) Wafer producing method
MY176320A (en) Wafer thinning method
MY177494A (en) Wafer producing method
MY195790A (en) Wafer Producing Method and Wafer Producing Apparatus
MY180611A (en) Sic substrate separating method
MY179207A (en) Wafer producing method
MY177233A (en) Wafer producing method
MY181116A (en) Wafer producing method
MY171644A (en) Wafer producing method
MY177241A (en) Thin plate separating method
MY180539A (en) Wafer producing method
MY181950A (en) Wafer processing method
MY177495A (en) Wafer thinning method
MY180541A (en) Wafer producing method
MY177492A (en) Wafer producing method
MY177237A (en) Wafer producing method