CN110310990B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN110310990B
CN110310990B CN201810844576.4A CN201810844576A CN110310990B CN 110310990 B CN110310990 B CN 110310990B CN 201810844576 A CN201810844576 A CN 201810844576A CN 110310990 B CN110310990 B CN 110310990B
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semiconductor region
semiconductor
region
conductivity type
type
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Chinese (zh)
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CN110310990A (zh
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玉城朋宏
中村和敏
下条亮平
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/128—Anode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201810844576.4A 2018-03-20 2018-07-27 半导体装置 Active CN110310990B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-053338 2018-03-20
JP2018053338A JP6935351B2 (ja) 2018-03-20 2018-03-20 半導体装置

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CN110310990A CN110310990A (zh) 2019-10-08
CN110310990B true CN110310990B (zh) 2022-05-24

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CN (1) CN110310990B (https=)

Families Citing this family (7)

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US11393812B2 (en) * 2017-12-28 2022-07-19 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
JP7204544B2 (ja) * 2019-03-14 2023-01-16 株式会社東芝 半導体装置
JP2021128993A (ja) * 2020-02-13 2021-09-02 サンケン電気株式会社 半導体装置およびスイッチングシステム
JP7296907B2 (ja) * 2020-03-10 2023-06-23 株式会社東芝 半導体装置
CN111987089A (zh) * 2020-08-19 2020-11-24 株洲中车时代半导体有限公司 逆导型igbt功率集成模块
JP7848526B2 (ja) * 2022-03-15 2026-04-21 富士電機株式会社 半導体装置
JP7834617B2 (ja) * 2022-09-14 2026-03-24 株式会社東芝 半導体装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
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JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
JP4156717B2 (ja) * 1998-01-13 2008-09-24 三菱電機株式会社 半導体装置
JP4070485B2 (ja) * 2001-05-09 2008-04-02 株式会社東芝 半導体装置
DE102006050338B4 (de) * 2006-10-25 2011-12-29 Infineon Technologies Austria Ag Halbleiterbauelement mit verbessertem Speicherladung zu Dioden-Softness Trade-off
JP5206541B2 (ja) 2008-04-01 2013-06-12 株式会社デンソー 半導体装置およびその製造方法
US7932583B2 (en) * 2008-05-13 2011-04-26 Infineon Technologies Austria Ag Reduced free-charge carrier lifetime device
JP2010183018A (ja) * 2009-02-09 2010-08-19 Toshiba Corp 半導体装置
JP5515922B2 (ja) * 2010-03-24 2014-06-11 富士電機株式会社 半導体装置
JP5678469B2 (ja) * 2010-05-07 2015-03-04 株式会社デンソー 半導体装置
JP6301776B2 (ja) * 2010-05-26 2018-03-28 三菱電機株式会社 半導体装置
JP5582102B2 (ja) * 2010-07-01 2014-09-03 株式会社デンソー 半導体装置
US8384151B2 (en) * 2011-01-17 2013-02-26 Infineon Technologies Austria Ag Semiconductor device and a reverse conducting IGBT
US9520465B2 (en) * 2011-07-27 2016-12-13 Kabushiki Kaisha Toyota Chuo Kenkyusho Diode, semiconductor device, and MOSFET
JP5742711B2 (ja) 2011-12-28 2015-07-01 株式会社デンソー 半導体装置
JP2013149761A (ja) * 2012-01-18 2013-08-01 Fuji Electric Co Ltd 半導体装置
JP5924420B2 (ja) * 2012-12-20 2016-05-25 トヨタ自動車株式会社 半導体装置
US9337270B2 (en) * 2013-12-19 2016-05-10 Infineon Technologies Ag Semiconductor device
JP2015170654A (ja) * 2014-03-05 2015-09-28 株式会社東芝 半導体装置
JP6158123B2 (ja) * 2014-03-14 2017-07-05 株式会社東芝 半導体装置
JP6197773B2 (ja) * 2014-09-29 2017-09-20 トヨタ自動車株式会社 半導体装置
JP6392133B2 (ja) * 2015-01-28 2018-09-19 株式会社東芝 半導体装置
JP6274154B2 (ja) * 2015-05-27 2018-02-07 トヨタ自動車株式会社 逆導通ｉｇｂｔ
JP6445952B2 (ja) * 2015-10-19 2018-12-26 株式会社東芝 半導体装置
CN107086217B (zh) * 2016-02-16 2023-05-16 富士电机株式会社 半导体装置
JP2016195271A (ja) * 2016-07-04 2016-11-17 三菱電機株式会社 半導体装置
JP6652515B2 (ja) 2017-02-09 2020-02-26 株式会社東芝 半導体装置
US10439038B2 (en) * 2017-02-09 2019-10-08 Kabushiki Kaisha Toshiba Semiconductor device and electrical apparatus
JP2019145708A (ja) * 2018-02-22 2019-08-29 株式会社東芝 半導体装置
US10636898B2 (en) * 2018-08-15 2020-04-28 Kabushiki Kaisha Toshiba Semiconductor device

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Publication number Publication date
CN110310990A (zh) 2019-10-08
US20190296132A1 (en) 2019-09-26
JP6935351B2 (ja) 2021-09-15
JP2019165180A (ja) 2019-09-26
US10700184B2 (en) 2020-06-30

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