CN109873030A - 具有沟槽栅极结构和屏蔽区域的碳化硅半导体器件 - Google Patents

具有沟槽栅极结构和屏蔽区域的碳化硅半导体器件 Download PDF

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Publication number
CN109873030A
CN109873030A CN201811453294.8A CN201811453294A CN109873030A CN 109873030 A CN109873030 A CN 109873030A CN 201811453294 A CN201811453294 A CN 201811453294A CN 109873030 A CN109873030 A CN 109873030A
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gate
trench
semiconductor devices
contact structures
contact
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R.西米尼克
W.贝格纳
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Infineon Technologies AG
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Infineon Technologies AG
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0121—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors
    • H10D64/0123—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201811453294.8A 2017-12-01 2018-11-30 具有沟槽栅极结构和屏蔽区域的碳化硅半导体器件 Pending CN109873030A (zh)

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DE102017128633.0 2017-12-01
DE102017128633.0A DE102017128633B4 (de) 2017-12-01 2017-12-01 Siliziumcarbid-halbleiterbauelement mit grabengatestrukturen und abschirmgebieten

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111599858A (zh) * 2019-12-24 2020-08-28 湖南大学 一种抑制dv/dt，di/dt噪音产生的高压SiC IGBT的结构
CN112234100A (zh) * 2019-07-15 2021-01-15 英飞凌科技股份有限公司 包括沟槽接触结构的半导体器件及制造方法
CN113270495A (zh) * 2020-02-14 2021-08-17 苏州华太电子技术有限公司 Vdmosfet器件结构及其制作方法
CN114551589A (zh) * 2022-04-26 2022-05-27 安建科技(深圳)有限公司 一种功率半导体器件及其制备方法
CN115425089A (zh) * 2022-11-07 2022-12-02 广东芯聚能半导体有限公司 半导体结构及其制备方法
TWI827147B (zh) * 2021-09-02 2023-12-21 日商日立功率半導體股份有限公司 半導體裝置、半導體裝置之製造方法及電力轉換裝置
CN118610262A (zh) * 2024-07-15 2024-09-06 扬州扬杰电子科技股份有限公司 一种SiC UMOSFET器件及其制备方法

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014117780B4 (de) 2014-12-03 2018-06-21 Infineon Technologies Ag Halbleiterbauelement mit einer Grabenelektrode und Verfahren zur Herstellung
DE102014119465B3 (de) 2014-12-22 2016-05-25 Infineon Technologies Ag Halbleitervorrichtung mit streifenförmigen trenchgatestrukturen, transistormesas und diodenmesas
DE102018103973B4 (de) 2018-02-22 2020-12-03 Infineon Technologies Ag Siliziumcarbid-halbleiterbauelement
US10937901B2 (en) * 2018-03-14 2021-03-02 Fuji Electric Co., Ltd. Insulated gate semiconductor device with injuction supression structure and method of manufacturing same
DE102019111308A1 (de) 2018-05-07 2019-11-07 Infineon Technologies Ag Siliziumcarbid halbleiterbauelement
IT201800007780A1 (it) * 2018-08-02 2020-02-02 St Microelectronics Srl Dispositivo mosfet in carburo di silicio e relativo metodo di fabbricazione
DE102018124740B4 (de) 2018-10-08 2025-08-28 Infineon Technologies Ag Verfahren zur herstellung eines halbleiterbauelements
US10903322B2 (en) 2018-11-16 2021-01-26 Infineon Technologies Ag SiC power semiconductor device with integrated body diode
US10985248B2 (en) 2018-11-16 2021-04-20 Infineon Technologies Ag SiC power semiconductor device with integrated Schottky junction
US10586845B1 (en) 2018-11-16 2020-03-10 Infineon Technologies Ag SiC trench transistor device and methods of manufacturing thereof
EP3843132B1 (en) * 2019-04-16 2024-11-27 Fuji Electric Co., Ltd. Semiconductor device and production method
JP7240970B2 (ja) * 2019-06-27 2023-03-16 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE102019121859B3 (de) * 2019-08-14 2020-11-26 Infineon Technologies Ag Siliziumcarbid-vorrichtung mit graben-gate
JP2021044517A (ja) * 2019-09-13 2021-03-18 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
DE102019129412A1 (de) 2019-10-31 2021-05-06 Infineon Technologies Ag Siliziumcarbid-vorrichtung mit graben-gatestruktur und herstellungsverfahren
JP7670277B2 (ja) * 2019-11-18 2025-04-30 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7382559B2 (ja) * 2019-12-25 2023-11-17 株式会社ノベルクリスタルテクノロジー トレンチ型ｍｅｓｆｅｔ
CN114503280B (zh) * 2020-04-16 2026-04-24 富士电机株式会社 半导体装置及半导体装置的制造方法
EP3930006A1 (en) * 2020-06-24 2021-12-29 Infineon Technologies AG Semiconductor device including trench gate structure and buried shielding region and method of manufacturing
CN116195070B (zh) * 2020-09-30 2024-11-26 三菱电机株式会社 碳化硅半导体装置的制造方法、碳化硅半导体装置以及电力变换装置
CN114373748B (zh) * 2020-10-15 2024-07-09 上海瀚薪科技有限公司 碳化硅半导体组件以及整合二极管及场效晶体管的组件
US12119377B2 (en) 2020-12-21 2024-10-15 Infineon Technologies Ag SiC devices with shielding structure
US11367775B1 (en) * 2020-12-21 2022-06-21 Infineon Technologies Ag Shielding structure for SiC devices
CN114975576B (zh) * 2021-02-19 2025-08-26 苏州东微半导体股份有限公司 半导体功率器件
US11302776B1 (en) 2021-05-31 2022-04-12 Genesic Semiconductor Inc. Method and manufacture of robust, high-performance devices
DE102021119199A1 (de) 2021-07-23 2023-01-26 Infineon Technologies Ag Gate-Grabenstruktur enthaltende Halbleitervorrichtung
DE102021121138B3 (de) * 2021-08-13 2023-02-02 Infineon Technologies Ag Halbleitervorrichtungen und verfahren zum herstellen einer halbleitervorrichtung
JP7697313B2 (ja) * 2021-08-17 2025-06-24 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US12604504B2 (en) 2021-11-23 2026-04-14 Infineon Technologies Ag Shielding structure for silicon carbide devices
EP4228004A1 (en) 2022-02-09 2023-08-16 Infineon Technologies AG Silicon carbide device with metallic interface layers and method of manufacturing
CN114496785B (zh) * 2022-04-18 2022-08-02 深圳芯能半导体技术有限公司 一种t型底部保护的沟槽型碳化硅mosfet及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101626033A (zh) * 2008-07-09 2010-01-13 飞兆半导体公司 屏蔽栅沟槽fet结构及其形成方法
US20120086060A1 (en) * 2010-10-07 2012-04-12 Elpida Memory, Inc. Semiconductor device and method of forming the same
US20170110571A1 (en) * 2015-10-20 2017-04-20 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
EP1267415A3 (en) * 2001-06-11 2009-04-15 Kabushiki Kaisha Toshiba Power semiconductor device having resurf layer
KR100582374B1 (ko) * 2004-09-08 2006-05-22 매그나칩 반도체 유한회사 고전압 트랜지스터 및 그 제조 방법
DE112006003742B4 (de) * 2006-02-07 2015-06-03 Mitsubishi Electric Corp. Halbleitervorrichtung und Verfahren zur Herstellung dergleichen
US7612407B2 (en) * 2006-08-07 2009-11-03 Force-Mos Technology Corp. Ltd Trenched MOSFET device configuration with reduced mask processes
JP5132123B2 (ja) * 2006-11-01 2013-01-30 株式会社東芝 電力用半導体素子
US8704295B1 (en) * 2008-02-14 2014-04-22 Maxpower Semiconductor, Inc. Schottky and MOSFET+Schottky structures, devices, and methods
EP2248159A4 (en) * 2008-02-14 2011-07-13 Maxpower Semiconductor Inc SEMICONDUCTOR COMPONENT STRUCTURES AND SAME PROCESSES
JP4877286B2 (ja) * 2008-07-08 2012-02-15 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US8354711B2 (en) * 2010-01-11 2013-01-15 Maxpower Semiconductor, Inc. Power MOSFET and its edge termination
WO2011133481A2 (en) * 2010-04-20 2011-10-27 Maxpower Semiconductor Inc. Power mosfet with embedded recessed field plate and methods of fabrication
JP5498431B2 (ja) * 2011-02-02 2014-05-21 ローム株式会社 半導体装置およびその製造方法
US8680607B2 (en) * 2011-06-20 2014-03-25 Maxpower Semiconductor, Inc. Trench gated power device with multiple trench width and its fabrication process
US20130059434A1 (en) * 2011-09-07 2013-03-07 Tao Yang Method for manufacturing electrodes and wires in gate last process
US20130164895A1 (en) * 2011-12-12 2013-06-27 Maxpower Semiconductor, Inc. Trench-Gated Power Devices with Two Types of Trenches and Reliable Polycidation
US9024379B2 (en) * 2012-02-13 2015-05-05 Maxpower Semiconductor Inc. Trench transistors and methods with low-voltage-drop shunt to body diode
JP5991020B2 (ja) * 2012-05-18 2016-09-14 株式会社豊田中央研究所 炭化珪素単結晶を主材料とする半導体装置
US8637922B1 (en) 2012-07-19 2014-01-28 Infineon Technologies Ag Semiconductor device
JP6299102B2 (ja) * 2012-08-07 2018-03-28 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US9293558B2 (en) 2012-11-26 2016-03-22 Infineon Technologies Austria Ag Semiconductor device
JP2014110402A (ja) * 2012-12-04 2014-06-12 Rohm Co Ltd 半導体装置
JP6221592B2 (ja) * 2013-10-02 2017-11-01 日産自動車株式会社 半導体装置の製造方法
DE102014107325B4 (de) 2014-05-23 2023-08-10 Infineon Technologies Ag Halbleiterbauelement und verfahren zum herstellen eines halbleiterbauelements
DE102014109846B4 (de) 2014-07-14 2020-06-18 Infineon Technologies Austria Ag Leistungs-MOSFET und Verfahren zum Herstellen eines Leistungs-MOSFET
US9455249B2 (en) * 2014-08-13 2016-09-27 Alpha And Omega Semiconductor Incorporated Planar srfet using no additional masks and layout method
DE102014119465B3 (de) 2014-12-22 2016-05-25 Infineon Technologies Ag Halbleitervorrichtung mit streifenförmigen trenchgatestrukturen, transistormesas und diodenmesas
DE102015103067B3 (de) * 2015-03-03 2016-09-01 Infineon Technologies Ag Halbleitervorrichtung mit trenchgatestrukturen in einem halbleiterkörper mit hexagonalem kristallgitter
DE102015103072B4 (de) * 2015-03-03 2021-08-12 Infineon Technologies Ag Halbleitervorrichtung mit grabenstruktur einschliesslich einer gateelektrode und einer kontaktstruktur fur ein diodengebiet
JP6304445B2 (ja) * 2015-03-16 2018-04-04 富士電機株式会社 半導体装置の製造方法
US9634129B2 (en) * 2015-06-02 2017-04-25 Semiconductor Component Industries, Llc Insulated gate bipolar transistor (IGBT) and related methods
DE102015113605B4 (de) * 2015-08-18 2018-09-27 Infineon Technologies Austria Ag Halbleitervorrichtung, die einen vertikalen PN-Übergang zwischen einem Bodybereich und einem Driftbereich enthält
JP6478884B2 (ja) 2015-09-11 2019-03-06 株式会社東芝 半導体装置
US20170345905A1 (en) * 2016-05-24 2017-11-30 Infineon Technologies Ag Wide-Bandgap Semiconductor Device with Trench Gate Structures
US20180358449A1 (en) * 2017-06-12 2018-12-13 Maxpower Semiconductor Inc. Fabrication of Trench-Gated Wide-Bandgap Devices
US12284817B2 (en) * 2016-06-10 2025-04-22 Maxpower Semiconductor Inc. Trench-gated heterostructure and double-heterostructure active devices
DE102018010445B4 (de) * 2017-03-24 2025-07-10 Infineon Technologies Ag Siliziumcarbid-halbleitervorrichtung und herstellungsverfahren
CN106876471B (zh) * 2017-03-31 2019-12-17 西安电子科技大学 双槽umosfet器件
JP6432638B2 (ja) 2017-04-27 2018-12-05 豊田合成株式会社 半導体装置の動作方法および設計方法
DE102017110508B4 (de) * 2017-05-15 2023-03-02 Infineon Technologies Ag Halbleitervorrichtung mit Transistorzellen und einer Driftstruktur und Herstellungsverfahren
JP7280666B2 (ja) * 2017-05-17 2023-05-24 ローム株式会社 半導体装置およびその製造方法
JP7059556B2 (ja) * 2017-10-05 2022-04-26 富士電機株式会社 半導体装置
JP7029711B2 (ja) * 2017-11-29 2022-03-04 国立研究開発法人産業技術総合研究所 半導体装置
US10937901B2 (en) * 2018-03-14 2021-03-02 Fuji Electric Co., Ltd. Insulated gate semiconductor device with injuction supression structure and method of manufacturing same
DE102018127797B4 (de) * 2018-11-07 2022-08-04 Infineon Technologies Ag Einen siliziumcarbid-körper enthaltende halbleitervorrichtung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101626033A (zh) * 2008-07-09 2010-01-13 飞兆半导体公司 屏蔽栅沟槽fet结构及其形成方法
US20120086060A1 (en) * 2010-10-07 2012-04-12 Elpida Memory, Inc. Semiconductor device and method of forming the same
US20170110571A1 (en) * 2015-10-20 2017-04-20 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112234100A (zh) * 2019-07-15 2021-01-15 英飞凌科技股份有限公司 包括沟槽接触结构的半导体器件及制造方法
CN117410342A (zh) * 2019-07-15 2024-01-16 英飞凌科技股份有限公司 包括沟槽接触结构的半导体器件及制造方法
CN111599858A (zh) * 2019-12-24 2020-08-28 湖南大学 一种抑制dv/dt，di/dt噪音产生的高压SiC IGBT的结构
CN111599858B (zh) * 2019-12-24 2021-08-20 湖南大学 一种抑制dv/dt，di/dt噪音产生的高压SiC IGBT的结构
CN113270495A (zh) * 2020-02-14 2021-08-17 苏州华太电子技术有限公司 Vdmosfet器件结构及其制作方法
TWI827147B (zh) * 2021-09-02 2023-12-21 日商日立功率半導體股份有限公司 半導體裝置、半導體裝置之製造方法及電力轉換裝置
CN114551589A (zh) * 2022-04-26 2022-05-27 安建科技(深圳)有限公司 一种功率半导体器件及其制备方法
CN114551589B (zh) * 2022-04-26 2022-09-09 安建科技(深圳)有限公司 一种功率半导体器件及其制备方法
CN115425089A (zh) * 2022-11-07 2022-12-02 广东芯聚能半导体有限公司 半导体结构及其制备方法
CN118610262A (zh) * 2024-07-15 2024-09-06 扬州扬杰电子科技股份有限公司 一种SiC UMOSFET器件及其制备方法

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