JP7283890B2 - 溝ゲート構造およびシールド領域を備えた炭化ケイ素半導体モジュール - Google Patents

溝ゲート構造およびシールド領域を備えた炭化ケイ素半導体モジュール Download PDF

Info

Publication number
JP7283890B2
JP7283890B2 JP2018223610A JP2018223610A JP7283890B2 JP 7283890 B2 JP7283890 B2 JP 7283890B2 JP 2018223610 A JP2018223610 A JP 2018223610A JP 2018223610 A JP2018223610 A JP 2018223610A JP 7283890 B2 JP7283890 B2 JP 7283890B2
Authority
JP
Japan
Prior art keywords
contact
gate
section
layer
semiconductor module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018223610A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019102814A5 (https=
JP2019102814A (ja
Inventor
ベアグナー ヴォルフガング
シエミエニエツ ラルフ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of JP2019102814A publication Critical patent/JP2019102814A/ja
Publication of JP2019102814A5 publication Critical patent/JP2019102814A5/ja
Priority to JP2023082625A priority Critical patent/JP2023096135A/ja
Application granted granted Critical
Publication of JP7283890B2 publication Critical patent/JP7283890B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0121—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors
    • H10D64/0123—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2018223610A 2017-12-01 2018-11-29 溝ゲート構造およびシールド領域を備えた炭化ケイ素半導体モジュール Active JP7283890B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023082625A JP2023096135A (ja) 2017-12-01 2023-05-18 溝ゲート構造およびシールド領域を備えた炭化ケイ素半導体モジュール

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017128633.0 2017-12-01
DE102017128633.0A DE102017128633B4 (de) 2017-12-01 2017-12-01 Siliziumcarbid-halbleiterbauelement mit grabengatestrukturen und abschirmgebieten

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023082625A Division JP2023096135A (ja) 2017-12-01 2023-05-18 溝ゲート構造およびシールド領域を備えた炭化ケイ素半導体モジュール

Publications (3)

Publication Number Publication Date
JP2019102814A JP2019102814A (ja) 2019-06-24
JP2019102814A5 JP2019102814A5 (https=) 2021-10-28
JP7283890B2 true JP7283890B2 (ja) 2023-05-30

Family

ID=66547642

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2018223610A Active JP7283890B2 (ja) 2017-12-01 2018-11-29 溝ゲート構造およびシールド領域を備えた炭化ケイ素半導体モジュール
JP2023082625A Pending JP2023096135A (ja) 2017-12-01 2023-05-18 溝ゲート構造およびシールド領域を備えた炭化ケイ素半導体モジュール

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023082625A Pending JP2023096135A (ja) 2017-12-01 2023-05-18 溝ゲート構造およびシールド領域を備えた炭化ケイ素半導体モジュール

Country Status (4)

Country Link
US (4) US11043560B2 (https=)
JP (2) JP7283890B2 (https=)
CN (1) CN109873030A (https=)
DE (1) DE102017128633B4 (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014117780B4 (de) 2014-12-03 2018-06-21 Infineon Technologies Ag Halbleiterbauelement mit einer Grabenelektrode und Verfahren zur Herstellung
DE102014119465B3 (de) 2014-12-22 2016-05-25 Infineon Technologies Ag Halbleitervorrichtung mit streifenförmigen trenchgatestrukturen, transistormesas und diodenmesas
DE102018103973B4 (de) 2018-02-22 2020-12-03 Infineon Technologies Ag Siliziumcarbid-halbleiterbauelement
US10937901B2 (en) * 2018-03-14 2021-03-02 Fuji Electric Co., Ltd. Insulated gate semiconductor device with injuction supression structure and method of manufacturing same
DE102019111308A1 (de) 2018-05-07 2019-11-07 Infineon Technologies Ag Siliziumcarbid halbleiterbauelement
IT201800007780A1 (it) * 2018-08-02 2020-02-02 St Microelectronics Srl Dispositivo mosfet in carburo di silicio e relativo metodo di fabbricazione
DE102018124740B4 (de) 2018-10-08 2025-08-28 Infineon Technologies Ag Verfahren zur herstellung eines halbleiterbauelements
US10903322B2 (en) 2018-11-16 2021-01-26 Infineon Technologies Ag SiC power semiconductor device with integrated body diode
US10985248B2 (en) 2018-11-16 2021-04-20 Infineon Technologies Ag SiC power semiconductor device with integrated Schottky junction
US10586845B1 (en) 2018-11-16 2020-03-10 Infineon Technologies Ag SiC trench transistor device and methods of manufacturing thereof
EP3843132B1 (en) * 2019-04-16 2024-11-27 Fuji Electric Co., Ltd. Semiconductor device and production method
JP7240970B2 (ja) * 2019-06-27 2023-03-16 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE102019119121B3 (de) * 2019-07-15 2020-09-03 Infineon Technologies Ag Graben-kontaktstruktur enthaltende halbleitervorrichtung und herstellungsverfahren
DE102019121859B3 (de) * 2019-08-14 2020-11-26 Infineon Technologies Ag Siliziumcarbid-vorrichtung mit graben-gate
JP2021044517A (ja) * 2019-09-13 2021-03-18 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
DE102019129412A1 (de) 2019-10-31 2021-05-06 Infineon Technologies Ag Siliziumcarbid-vorrichtung mit graben-gatestruktur und herstellungsverfahren
JP7670277B2 (ja) * 2019-11-18 2025-04-30 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
CN111599858B (zh) * 2019-12-24 2021-08-20 湖南大学 一种抑制dv/dt，di/dt噪音产生的高压SiC IGBT的结构
JP7382559B2 (ja) * 2019-12-25 2023-11-17 株式会社ノベルクリスタルテクノロジー トレンチ型ｍｅｓｆｅｔ
CN113270495A (zh) * 2020-02-14 2021-08-17 苏州华太电子技术有限公司 Vdmosfet器件结构及其制作方法
CN114503280B (zh) * 2020-04-16 2026-04-24 富士电机株式会社 半导体装置及半导体装置的制造方法
EP3930006A1 (en) * 2020-06-24 2021-12-29 Infineon Technologies AG Semiconductor device including trench gate structure and buried shielding region and method of manufacturing
CN116195070B (zh) * 2020-09-30 2024-11-26 三菱电机株式会社 碳化硅半导体装置的制造方法、碳化硅半导体装置以及电力变换装置
CN114373748B (zh) * 2020-10-15 2024-07-09 上海瀚薪科技有限公司 碳化硅半导体组件以及整合二极管及场效晶体管的组件
US12119377B2 (en) 2020-12-21 2024-10-15 Infineon Technologies Ag SiC devices with shielding structure
US11367775B1 (en) * 2020-12-21 2022-06-21 Infineon Technologies Ag Shielding structure for SiC devices
CN114975576B (zh) * 2021-02-19 2025-08-26 苏州东微半导体股份有限公司 半导体功率器件
US11302776B1 (en) 2021-05-31 2022-04-12 Genesic Semiconductor Inc. Method and manufacture of robust, high-performance devices
DE102021119199A1 (de) 2021-07-23 2023-01-26 Infineon Technologies Ag Gate-Grabenstruktur enthaltende Halbleitervorrichtung
DE102021121138B3 (de) * 2021-08-13 2023-02-02 Infineon Technologies Ag Halbleitervorrichtungen und verfahren zum herstellen einer halbleitervorrichtung
JP7697313B2 (ja) * 2021-08-17 2025-06-24 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7701610B2 (ja) * 2021-09-02 2025-07-02 ミネベアパワーデバイス株式会社 半導体装置、半導体装置の製造方法、電力変換装置
US12604504B2 (en) 2021-11-23 2026-04-14 Infineon Technologies Ag Shielding structure for silicon carbide devices
EP4228004A1 (en) 2022-02-09 2023-08-16 Infineon Technologies AG Silicon carbide device with metallic interface layers and method of manufacturing
CN114496785B (zh) * 2022-04-18 2022-08-02 深圳芯能半导体技术有限公司 一种t型底部保护的沟槽型碳化硅mosfet及其制备方法
CN114551589B (zh) * 2022-04-26 2022-09-09 安建科技(深圳)有限公司 一种功率半导体器件及其制备方法
CN115425089A (zh) * 2022-11-07 2022-12-02 广东芯聚能半导体有限公司 半导体结构及其制备方法
CN118610262B (zh) * 2024-07-15 2025-02-11 扬州扬杰电子科技股份有限公司 一种SiC UMOSFET器件及其制备方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008117826A (ja) 2006-11-01 2008-05-22 Toshiba Corp 電力用半導体素子
JP2010021175A (ja) 2008-07-08 2010-01-28 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2012178536A (ja) 2011-02-02 2012-09-13 Rohm Co Ltd 半導体装置およびその製造方法
JP2013243207A (ja) 2012-05-18 2013-12-05 Toyota Central R&D Labs Inc 炭化珪素単結晶を主材料とする半導体装置
JP2014053595A (ja) 2012-08-07 2014-03-20 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2014110402A (ja) 2012-12-04 2014-06-12 Rohm Co Ltd 半導体装置
JP2015072974A (ja) 2013-10-02 2015-04-16 日産自動車株式会社 半導体装置の製造方法
JP2016163047A (ja) 2015-03-03 2016-09-05 インフィネオン テクノロジーズ アクチエンゲゼルシャフトＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ ＡＧ 六方晶格子を有する半導体ボディにトレンチゲート構造を備えた半導体デバイス
JP2017079251A (ja) 2015-10-20 2017-04-27 富士電機株式会社 半導体装置および半導体装置の製造方法
CN106876471A (zh) 2017-03-31 2017-06-20 西安电子科技大学 双槽umosfet器件

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
EP1267415A3 (en) * 2001-06-11 2009-04-15 Kabushiki Kaisha Toshiba Power semiconductor device having resurf layer
KR100582374B1 (ko) * 2004-09-08 2006-05-22 매그나칩 반도체 유한회사 고전압 트랜지스터 및 그 제조 방법
DE112006003742B4 (de) * 2006-02-07 2015-06-03 Mitsubishi Electric Corp. Halbleitervorrichtung und Verfahren zur Herstellung dergleichen
US7612407B2 (en) * 2006-08-07 2009-11-03 Force-Mos Technology Corp. Ltd Trenched MOSFET device configuration with reduced mask processes
US8704295B1 (en) * 2008-02-14 2014-04-22 Maxpower Semiconductor, Inc. Schottky and MOSFET+Schottky structures, devices, and methods
EP2248159A4 (en) * 2008-02-14 2011-07-13 Maxpower Semiconductor Inc SEMICONDUCTOR COMPONENT STRUCTURES AND SAME PROCESSES
US7936009B2 (en) * 2008-07-09 2011-05-03 Fairchild Semiconductor Corporation Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein
US8354711B2 (en) * 2010-01-11 2013-01-15 Maxpower Semiconductor, Inc. Power MOSFET and its edge termination
WO2011133481A2 (en) * 2010-04-20 2011-10-27 Maxpower Semiconductor Inc. Power mosfet with embedded recessed field plate and methods of fabrication
JP5729806B2 (ja) * 2010-10-07 2015-06-03 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置および半導体装置の製造方法
US8680607B2 (en) * 2011-06-20 2014-03-25 Maxpower Semiconductor, Inc. Trench gated power device with multiple trench width and its fabrication process
US20130059434A1 (en) * 2011-09-07 2013-03-07 Tao Yang Method for manufacturing electrodes and wires in gate last process
US20130164895A1 (en) * 2011-12-12 2013-06-27 Maxpower Semiconductor, Inc. Trench-Gated Power Devices with Two Types of Trenches and Reliable Polycidation
US9024379B2 (en) * 2012-02-13 2015-05-05 Maxpower Semiconductor Inc. Trench transistors and methods with low-voltage-drop shunt to body diode
US8637922B1 (en) 2012-07-19 2014-01-28 Infineon Technologies Ag Semiconductor device
US9293558B2 (en) 2012-11-26 2016-03-22 Infineon Technologies Austria Ag Semiconductor device
DE102014107325B4 (de) 2014-05-23 2023-08-10 Infineon Technologies Ag Halbleiterbauelement und verfahren zum herstellen eines halbleiterbauelements
DE102014109846B4 (de) 2014-07-14 2020-06-18 Infineon Technologies Austria Ag Leistungs-MOSFET und Verfahren zum Herstellen eines Leistungs-MOSFET
US9455249B2 (en) * 2014-08-13 2016-09-27 Alpha And Omega Semiconductor Incorporated Planar srfet using no additional masks and layout method
DE102014119465B3 (de) 2014-12-22 2016-05-25 Infineon Technologies Ag Halbleitervorrichtung mit streifenförmigen trenchgatestrukturen, transistormesas und diodenmesas
DE102015103072B4 (de) * 2015-03-03 2021-08-12 Infineon Technologies Ag Halbleitervorrichtung mit grabenstruktur einschliesslich einer gateelektrode und einer kontaktstruktur fur ein diodengebiet
JP6304445B2 (ja) * 2015-03-16 2018-04-04 富士電機株式会社 半導体装置の製造方法
US9634129B2 (en) * 2015-06-02 2017-04-25 Semiconductor Component Industries, Llc Insulated gate bipolar transistor (IGBT) and related methods
DE102015113605B4 (de) * 2015-08-18 2018-09-27 Infineon Technologies Austria Ag Halbleitervorrichtung, die einen vertikalen PN-Übergang zwischen einem Bodybereich und einem Driftbereich enthält
JP6478884B2 (ja) 2015-09-11 2019-03-06 株式会社東芝 半導体装置
US20170345905A1 (en) * 2016-05-24 2017-11-30 Infineon Technologies Ag Wide-Bandgap Semiconductor Device with Trench Gate Structures
US20180358449A1 (en) * 2017-06-12 2018-12-13 Maxpower Semiconductor Inc. Fabrication of Trench-Gated Wide-Bandgap Devices
US12284817B2 (en) * 2016-06-10 2025-04-22 Maxpower Semiconductor Inc. Trench-gated heterostructure and double-heterostructure active devices
DE102018010445B4 (de) * 2017-03-24 2025-07-10 Infineon Technologies Ag Siliziumcarbid-halbleitervorrichtung und herstellungsverfahren
JP6432638B2 (ja) 2017-04-27 2018-12-05 豊田合成株式会社 半導体装置の動作方法および設計方法
DE102017110508B4 (de) * 2017-05-15 2023-03-02 Infineon Technologies Ag Halbleitervorrichtung mit Transistorzellen und einer Driftstruktur und Herstellungsverfahren
JP7280666B2 (ja) * 2017-05-17 2023-05-24 ローム株式会社 半導体装置およびその製造方法
JP7059556B2 (ja) * 2017-10-05 2022-04-26 富士電機株式会社 半導体装置
JP7029711B2 (ja) * 2017-11-29 2022-03-04 国立研究開発法人産業技術総合研究所 半導体装置
US10937901B2 (en) * 2018-03-14 2021-03-02 Fuji Electric Co., Ltd. Insulated gate semiconductor device with injuction supression structure and method of manufacturing same
DE102018127797B4 (de) * 2018-11-07 2022-08-04 Infineon Technologies Ag Einen siliziumcarbid-körper enthaltende halbleitervorrichtung

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008117826A (ja) 2006-11-01 2008-05-22 Toshiba Corp 電力用半導体素子
JP2010021175A (ja) 2008-07-08 2010-01-28 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2012178536A (ja) 2011-02-02 2012-09-13 Rohm Co Ltd 半導体装置およびその製造方法
JP2013243207A (ja) 2012-05-18 2013-12-05 Toyota Central R&D Labs Inc 炭化珪素単結晶を主材料とする半導体装置
JP2014053595A (ja) 2012-08-07 2014-03-20 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2014110402A (ja) 2012-12-04 2014-06-12 Rohm Co Ltd 半導体装置
JP2015072974A (ja) 2013-10-02 2015-04-16 日産自動車株式会社 半導体装置の製造方法
JP2016163047A (ja) 2015-03-03 2016-09-05 インフィネオン テクノロジーズ アクチエンゲゼルシャフトＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ ＡＧ 六方晶格子を有する半導体ボディにトレンチゲート構造を備えた半導体デバイス
JP2017079251A (ja) 2015-10-20 2017-04-27 富士電機株式会社 半導体装置および半導体装置の製造方法
CN106876471A (zh) 2017-03-31 2017-06-20 西安电子科技大学 双槽umosfet器件

Also Published As

Publication number Publication date
US11043560B2 (en) 2021-06-22
JP2023096135A (ja) 2023-07-06
US20190172910A1 (en) 2019-06-06
JP2019102814A (ja) 2019-06-24
US12324203B2 (en) 2025-06-03
US20230395663A1 (en) 2023-12-07
CN109873030A (zh) 2019-06-11
DE102017128633A1 (de) 2019-06-06
DE102017128633B4 (de) 2024-09-19
US11855147B2 (en) 2023-12-26
US20210273054A1 (en) 2021-09-02
US20250275203A1 (en) 2025-08-28

Similar Documents

Publication Publication Date Title
JP7283890B2 (ja) 溝ゲート構造およびシールド領域を備えた炭化ケイ素半導体モジュール
US11177354B2 (en) Method of manufacturing silicon carbide semiconductor devices
CN101221989B (zh) SiC肖特基势垒半导体器件
JP7786512B2 (ja) 半導体装置
JP6625673B2 (ja) 半導体デバイスおよびその製造方法
EP2620983B1 (en) Semiconductor element and manufacturing method therefor
US8564060B2 (en) Semiconductor device with large blocking voltage and manufacturing method thereof
CN110190125A (zh) 碳化硅半导体器件
KR20210063491A (ko) 고전압 mosfet 장치 및 상기 장치의 제조방법
TW200937639A (en) Structure and method for forming power devices with carbon-containing region
JP2019096878A (ja) エッジ終端構造を有するシリコンカーバイド半導体部品
CN101425539A (zh) 高迁移率沟槽金属氧化物半导体场效应晶体管
US11881512B2 (en) Method of manufacturing semiconductor device with silicon carbide body
US20250151323A1 (en) Process of forming an electronic device including a transistor structure
CN112234100A (zh) 包括沟槽接触结构的半导体器件及制造方法
JP7439417B2 (ja) 超接合半導体装置および超接合半導体装置の製造方法
JP7851878B2 (ja) 半導体装置
US20260052738A1 (en) Power semiconductor devices and methods of forming the same
JP2024130307A (ja) 半導体装置
CN117637850A (zh) 碳化硅mos器件及其制备方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210914

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210914

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221026

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20221027

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230104

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230419

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230518

R150 Certificate of patent or registration of utility model

Ref document number: 7283890

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150