JP7283890B2 - 溝ゲート構造およびシールド領域を備えた炭化ケイ素半導体モジュール - Google Patents
溝ゲート構造およびシールド領域を備えた炭化ケイ素半導体モジュール Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 110
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 106
- 239000004065 semiconductor Substances 0.000 title claims description 64
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 55
- 239000002019 doping agent Substances 0.000 claims description 46
- 210000000746 body region Anatomy 0.000 claims description 36
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000000284 resting effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 66
- 229920002120 photoresistant polymer Polymers 0.000 description 20
- 238000000034 method Methods 0.000 description 15
- 239000007943 implant Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 11
- 238000002513 implantation Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 150000002736 metal compounds Chemical class 0.000 description 7
- 239000010936 titanium Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 SiC metal oxide Chemical class 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 238000013404 process transfer Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
Claims (14)
- 半導体モジュールにおいて、
前記半導体モジュールは、ゲート構造(150)と、コンタクト構造(315)と、シールド領域(160)と、を有しており、
前記ゲート構造(150)は、第1の表面(101)から出発して炭化ケイ素ボディ(100)内に延在しており、前記第1の表面(101)に対して平行な第1の水平方向(191)に沿った前記ゲート構造(150)の幅(w1)は、前記第1の表面(101)に対して垂直な前記ゲート構造(150)の垂直方向の寸法(v1)よりも小さく、
前記コンタクト構造(315)は、前記第1の表面(101)から出発して前記炭化ケイ素ボディ(100)内に延在しており、
前記ゲート構造(150)および前記コンタクト構造(315)は、前記第1の水平方向(191)に沿って交互に設けられており、
前記シールド領域(160)は、前記炭化ケイ素ボディ(100)内において、前記コンタクト構造(315)の底部に接しており、前記第1の水平方向(191)に沿って、前記ゲート構造(150)から間隔を空けて設けられており、
前記ゲート構造(150)は、ゲート誘電体(159)およびゲート電極(155)を有しており、前記ゲート電極(155)は、前記ゲート誘電体(159)に接している、金属構造(170)の第1の区間(171)を有しており、
前記コンタクト構造(315)は、前記炭化ケイ素ボディ(100)に接している、前記金属構造(170)の第2の区間(172)を有している、
半導体モジュール。 - 前記第1の水平方向(191)に沿った前記シールド領域(160)の幅(w4)は、前記コンタクト構造(315)の幅(w2)よりも大きい、
請求項1記載の半導体モジュール。 - 前記ゲート構造(150)と前記コンタクト構造(315)との間に形成されている、前記炭化ケイ素ボディ(100)のメサ区間(190)は、ボディ領域(120)を有しており、前記ボディ領域(120)は、ドリフト構造(130)と共に第1のpn接合部(pn1)を形成しており、ソース領域(110)と共に第2のpn接合部(pn2)を形成しており、前記ドリフト構造(130)は、前記シールド領域(160)と共に第3のpn接合部(pn3)を形成している、
請求項1または2記載の半導体モジュール。 - 前記ボディ領域(120)は、前記ゲート構造(150)に接している主区間(121)を有しており、前記主区間(121)と前記コンタクト構造(315)との間に、前記主区間(121)よりもドーパント濃度が高い、前記コンタクト構造(315)に接しているコンタクト区間(129)を有している、
請求項3記載の半導体モジュール。 - 前記コンタクト区間(129)は、前記ソース領域(110)の下の前記炭化ケイ素ボディ(100)内に埋設されるので、前記ソース領域(110)は、前記コンタクト区間(129)を前記第1の表面(101)から分離し、
前記コンタクト区間(129)および前記ソース領域(110)の両方は、前記コンタクト構造(315)の側壁に接触し、
前記ゲート構造(150)および/または前記コンタクト構造(315)は、前記第1の表面(101)と同一平面上にある、
請求項4記載の半導体モジュール。 - 前記第1の水平方向(191)に沿った前記メサ区間(190)のメサ幅(w3)は、前記ゲート構造(150)の前記垂直方向の寸法(v1)よりも小さい、
請求項3から5までのいずれか1項記載の半導体モジュール。 - 前記ドリフト構造(130)に接している、前記コンタクト構造(315)の区間は、ショットキーコンタクト(SC)を形成している、
請求項3から6までのいずれか1項記載の半導体モジュール。 - 前記コンタクト構造(315)の垂直方向の寸法(v2)は、前記ゲート構造(150)の前記垂直方向の寸法(v1)よりも大きい、
請求項1から7までのいずれか1項記載の半導体モジュール。 - 前記金属構造(170)は、少なくとも1つの第1の部分層(173)および第2の部分層(174)を有しており、
前記ゲート構造(150)における前記第1の部分層(173)は、前記ゲート誘電体(159)に接しており、前記コンタクト構造(315)における前記第1の部分層(173)は、前記炭化ケイ素ボディ(100)に接しており、
前記第2の部分層(174)は、前記第1の部分層(173)に載置されている、
請求項1から8までのいずれか1項記載の半導体モジュール。 - 前記ゲート構造(150)における前記第1の部分層(173)および前記コンタクト構造(315)における前記第1の部分層(173)は、同一の組成を有している、
請求項9記載の半導体モジュール。 - 前記ゲート構造(150)の相互に対向している側壁は、主格子面である、
請求項1から10までのいずれか1項記載の半導体モジュール。 - 前記第1の表面(101)から、前記シールド領域(160)における最大ドーパント濃度までの距離(v4)は、前記ゲート構造(150)の前記垂直方向の寸法(v1)よりも大きい、
請求項1から11までのいずれか1項記載の半導体モジュール。 - 前記ゲート構造(150)および前記コンタクト構造(315)は、前記第1の表面(101)に対して平行であり、前記第1の水平方向(191)に対して直交する第2の水平方向に対して平行な長手方向軸線を備えるように帯状に形成されている、
請求項1から12までのいずれか1項記載の半導体モジュール。 - 前記ゲート構造(150)の相互に対向している側壁は、前記炭化ケイ素ボディ(100)の(11-20)格子面に対して平行にかつ前記第1の表面(101)に対して垂直に配向されている、
請求項1から13までのいずれか1項記載の半導体モジュール。
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