CN1096108C - 硅片的制造装置 - Google Patents

硅片的制造装置 Download PDF

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Publication number
CN1096108C
CN1096108C CN96110121A CN96110121A CN1096108C CN 1096108 C CN1096108 C CN 1096108C CN 96110121 A CN96110121 A CN 96110121A CN 96110121 A CN96110121 A CN 96110121A CN 1096108 C CN1096108 C CN 1096108C
Authority
CN
China
Prior art keywords
grinding
mentioned
silicon wafer
grinding tool
tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN96110121A
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English (en)
Chinese (zh)
Other versions
CN1145531A (zh
Inventor
田中惠一
加贺谷修
畠中彻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Silicon Corp
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Silicon Corp, Mitsubishi Materials Corp filed Critical Mitsubishi Materials Silicon Corp
Publication of CN1145531A publication Critical patent/CN1145531A/zh
Application granted granted Critical
Publication of CN1096108C publication Critical patent/CN1096108C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/003—Multipurpose machines; Equipment therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
CN96110121A 1995-07-03 1996-07-03 硅片的制造装置 Expired - Lifetime CN1096108C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP191171/95 1995-07-03
JP19117195 1995-07-03
JP441596 1996-01-12
JP004415/96 1996-01-12
JP08978496A JP3923107B2 (ja) 1995-07-03 1996-04-11 シリコンウェーハの製造方法およびその装置
JP089784/96 1996-04-11

Publications (2)

Publication Number Publication Date
CN1145531A CN1145531A (zh) 1997-03-19
CN1096108C true CN1096108C (zh) 2002-12-11

Family

ID=27276263

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96110121A Expired - Lifetime CN1096108C (zh) 1995-07-03 1996-07-03 硅片的制造装置

Country Status (5)

Country Link
JP (1) JP3923107B2 (enExample)
KR (1) KR100457718B1 (enExample)
CN (1) CN1096108C (enExample)
DE (1) DE19626396B4 (enExample)
TW (1) TW303488B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1301184C (zh) * 2003-12-16 2007-02-21 汪开庆 加工半导体用兰宝石晶体基片的光学研磨机及其加工方法
CN102026774A (zh) * 2008-05-22 2011-04-20 信越半导体股份有限公司 两头磨削装置及芯片的制造方法

Families Citing this family (47)

* Cited by examiner, † Cited by third party
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JP3620554B2 (ja) * 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
JP2002346918A (ja) * 2001-05-29 2002-12-04 Speedfam Co Ltd 両面研磨装置
DE10132504C1 (de) 2001-07-05 2002-10-10 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung
DE10142400B4 (de) * 2001-08-30 2009-09-03 Siltronic Ag Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung
FR2850966B1 (fr) 2003-02-10 2005-03-18 Rhodia Polyamide Intermediates Procede de fabrication de composes dinitriles
FR2854891B1 (fr) 2003-05-12 2006-07-07 Rhodia Polyamide Intermediates Procede de preparation de dinitriles
EP2322503B1 (en) 2005-10-18 2014-12-31 Invista Technologies S.à.r.l. Process of making 3-aminopentanenitrile
PL387008A1 (pl) 2006-03-17 2009-05-11 Invista Technologies S.A.R.L. Sposób oczyszczania triorganofosforynów przez obróbkę dodatkiem zasadowym
DE102006062872B4 (de) * 2006-07-13 2012-06-14 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
DE102006062871B4 (de) * 2006-07-13 2012-06-21 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
US7919646B2 (en) 2006-07-14 2011-04-05 Invista North America S.A R.L. Hydrocyanation of 2-pentenenitrile
DE102007056627B4 (de) 2007-03-19 2023-12-21 Lapmaster Wolters Gmbh Verfahren zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
EP2146930A2 (en) 2007-05-14 2010-01-27 INVISTA Technologies S.à.r.l. High efficiency reactor and process
EP2164587B1 (en) 2007-06-13 2018-04-04 INVISTA Textiles (U.K.) Limited Process for improving adiponitrile quality
CN101910119B (zh) 2008-01-15 2013-05-29 因温斯特技术公司 用于制备和精制3-戊烯腈，和用于精制2-甲基-3-丁烯腈的方法
WO2009091790A1 (en) 2008-01-15 2009-07-23 Invista Technologies S.A.R.L. Hydrocyanation of pentenenitriles
JP5600867B2 (ja) * 2008-06-16 2014-10-08 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
JP2009302409A (ja) * 2008-06-16 2009-12-24 Sumco Corp 半導体ウェーハの製造方法
KR101610423B1 (ko) 2008-10-14 2016-04-08 인비스타 테크놀러지스 에스.에이 알.엘. 2-ｓｅｃ-알킬-4,5-디-(ｎ-알킬)페놀의 제조 방법
DE102009025242B4 (de) * 2009-06-17 2013-05-23 Siltronic Ag Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe
KR20120047251A (ko) 2009-08-07 2012-05-11 인비스타 테크놀러지스 에스.에이.알.엘. 디에스테르를 형성하기 위한 수소화 및 에스테르화
CN101708593B (zh) * 2009-12-08 2013-01-09 中国电子科技集团公司第四十五研究所 化学机械抛光心轴传动装置
CN101875181B (zh) * 2010-05-31 2012-02-22 青岛理工大学 脆硬材料磨削机床
CN101972983B (zh) * 2010-08-11 2013-01-09 中国电子科技集团公司第四十五研究所 化学机械抛光心轴装置
CN102172885B (zh) * 2011-01-31 2013-05-15 北京通美晶体技术有限公司 衬底的抛光装置及其抛光的衬底
CN102179734A (zh) * 2011-03-14 2011-09-14 刘晓明 超硬刀片钝化抛光机
CN102229093B (zh) * 2011-07-01 2013-09-18 中国电子科技集团公司第四十五研究所 一种应用在晶片抛光设备上的升降加压机构
DE102011089570A1 (de) 2011-12-22 2013-06-27 Siltronic Ag Führungskäfig zum beidseitigen Schleifen von mindestens einem scheibenförmigen Werkstück zwischen zwei rotierenden Arbeitsscheiben einer Schleifvorrichtung, Verfahren zur Herstellung des Führungskäfigs und Verfahren zum gleichzeitigen beidseitigen Schleifen von scheibenförmigen Werkstücken unter Verwendung des Führungskäfigs
CN103123865B (zh) * 2013-02-26 2015-05-27 宁波韵升股份有限公司 一种磁性产品加工方法及自动分选设备
CN104669105B (zh) * 2013-11-26 2017-12-29 浙江汇锋塑胶科技有限公司 一种蓝宝石触摸面板的两面研磨方法
CN103817572A (zh) * 2014-02-18 2014-05-28 河南机电高等专科学校 一种离合器摩擦钢片修复装置
CN103847032B (zh) * 2014-03-20 2016-01-06 德清晶辉光电科技有限公司 一种大直径超薄石英晶片的生产工艺
JP6707831B2 (ja) * 2015-10-09 2020-06-10 株式会社Sumco 研削装置および研削方法
JP6792363B2 (ja) * 2016-07-22 2020-11-25 株式会社ディスコ 研削装置
CN106425857A (zh) * 2016-11-18 2017-02-22 南京华东电子信息科技股份有限公司 一种新型中小型单片液晶面板抛光固定治具
CN107543837B (zh) * 2017-08-25 2020-02-21 郑州磨料磨具磨削研究所有限公司 一种砂轮精磨后硅片损伤层的检测方法
TWI656233B (zh) * 2017-10-26 2019-04-11 漢民科技股份有限公司 單晶圓處理裝置及其操作方法、傳送方法與準直器
CN108544329A (zh) * 2018-04-09 2018-09-18 中国工程物理研究院材料研究所 一种表面抛磨装置及其应用
DE212018000039U1 (de) * 2018-09-17 2018-10-23 Suzhou Maichuang Information Technology Co., Ltd. Automatische Schleifmaschine
JP7217409B2 (ja) * 2020-01-24 2023-02-03 株式会社東京精密 亀裂進展装置及び亀裂進展方法
CN112692722A (zh) * 2020-12-24 2021-04-23 江苏天科合达半导体有限公司 打磨设备、打磨盘的加工方法以及碳化硅晶片的加工方法
CN113752111B (zh) * 2021-09-30 2023-11-21 浙江仲全数控科技有限公司 一种立式双端面磨床
CN113815127B (zh) * 2021-10-20 2023-06-02 山东中恒建设集团有限公司 一种建筑施工用物料周转切割装置
CN115008318B (zh) * 2022-06-16 2025-03-28 南京工业职业技术大学 一种气动加载式双面环抛机
CN116652707A (zh) * 2023-06-30 2023-08-29 中原内配集团鼎锐科技有限公司 一种刀具钝化设备及其钝化加工方法
CN116967852B (zh) * 2023-07-18 2026-01-02 家颖科技(苏州)有限公司 一种陶瓷打磨方法
CN117564818A (zh) * 2023-12-07 2024-02-20 中国航发贵州黎阳航空动力有限公司 内端面高精密度磨削方法及磨削用标准块、标准块制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5113622A (en) * 1989-03-24 1992-05-19 Sumitomo Electric Industries, Ltd. Apparatus for grinding semiconductor wafer
JPH04307935A (ja) * 1991-04-05 1992-10-30 Fujikoshi Kikai Kogyo Kk ウエハーの両面同時研削方法とその装置
JPH06155450A (ja) * 1992-11-19 1994-06-03 Sumitomo Metal Ind Ltd マルチワイヤソーによる切断方法

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JPS59107854A (ja) * 1982-12-08 1984-06-22 Hitachi Ltd ウエハの両面同時研磨方法
JPS59169758A (ja) * 1983-03-15 1984-09-25 Toshiba Corp ウエハの研磨装置
JPS6384860A (ja) * 1986-09-26 1988-04-15 Hitachi Ltd 表面加工装置
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JPH06103678B2 (ja) * 1987-11-28 1994-12-14 株式会社東芝 半導体基板の加工方法
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JP2674665B2 (ja) * 1989-03-24 1997-11-12 住友電気工業株式会社 半導体ウェーハの研削装置
JPH0667070A (ja) * 1992-08-24 1994-03-11 Furukawa Electric Co Ltd:The 半導体レーザモジュール
JP2839801B2 (ja) * 1992-09-18 1998-12-16 三菱マテリアル株式会社 ウェーハの製造方法
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JP3047670B2 (ja) * 1993-04-08 2000-05-29 トヨタ自動車株式会社 電気自動車用エンジン駆動発電機の制御装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5113622A (en) * 1989-03-24 1992-05-19 Sumitomo Electric Industries, Ltd. Apparatus for grinding semiconductor wafer
JPH04307935A (ja) * 1991-04-05 1992-10-30 Fujikoshi Kikai Kogyo Kk ウエハーの両面同時研削方法とその装置
JPH06155450A (ja) * 1992-11-19 1994-06-03 Sumitomo Metal Ind Ltd マルチワイヤソーによる切断方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1301184C (zh) * 2003-12-16 2007-02-21 汪开庆 加工半导体用兰宝石晶体基片的光学研磨机及其加工方法
CN102026774A (zh) * 2008-05-22 2011-04-20 信越半导体股份有限公司 两头磨削装置及芯片的制造方法
CN102026774B (zh) * 2008-05-22 2013-04-17 信越半导体股份有限公司 两头磨削装置及芯片的制造方法

Also Published As

Publication number Publication date
JPH09248740A (ja) 1997-09-22
KR100457718B1 (ko) 2005-04-06
JP3923107B2 (ja) 2007-05-30
CN1145531A (zh) 1997-03-19
KR970008384A (ko) 1997-02-24
DE19626396A1 (de) 1997-01-16
TW303488B (enExample) 1997-04-21
DE19626396B4 (de) 2006-12-07

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