WO2023116555A1 - 一种大面积石英晶片研磨装置及其研磨方法 - Google Patents

一种大面积石英晶片研磨装置及其研磨方法 Download PDF

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Publication number
WO2023116555A1
WO2023116555A1 PCT/CN2022/139437 CN2022139437W WO2023116555A1 WO 2023116555 A1 WO2023116555 A1 WO 2023116555A1 CN 2022139437 W CN2022139437 W CN 2022139437W WO 2023116555 A1 WO2023116555 A1 WO 2023116555A1
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Prior art keywords
grinding
quartz wafer
swing arm
disc
arm
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PCT/CN2022/139437
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English (en)
French (fr)
Inventor
徐建民
丁洁
张勇
王亮
苏皓
狄建兴
郝建军
张迎春
王华恩
张贤领
崔立志
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唐山国芯晶源电子有限公司
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Priority to US18/301,221 priority Critical patent/US20230249312A1/en
Publication of WO2023116555A1 publication Critical patent/WO2023116555A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks

Definitions

  • the invention relates to a quartz wafer grinding device and a grinding method thereof, in particular to a grinding device and a grinding method for a large-area quartz wafer.
  • Quartz single crystal thin substrate (referred to as quartz wafer) is the core component of the quartz crystal oscillator, and its performance index (such as the frequency value of the quartz crystal) is an important factor affecting the quality of the quartz crystal oscillator product.
  • the surface quality and thickness of the wafer determine its frequency. The good surface quality of the quartz wafer can effectively improve the force-frequency characteristics of the resonator. Any tiny defects on the surface of the quartz wafer will affect the working accuracy and reliability of the components.
  • the processing accuracy of quartz wafers has put forward nanometer-level requirements.
  • Double-sided grinding with fixed abrasives is an effective processing method that takes into account both high surface quality and high surface shape accuracy. It can improve the bonding error of paraffin during processing and the deformation caused by the stress difference between the two surfaces of the processed substrate.
  • large-area quartz crystals The thin substrate has a large diameter-to-thickness ratio and is relatively thin. During double-sided grinding, the close contact between the large-area quartz crystal thin substrate and the grinding disc will increase the resistance during processing, thereby causing damage to the thin substrate. Therefore, double-sided grinding is mainly suitable for ultra-precision processing of thicker substrates, and is not suitable for processing thin quartz crystal substrates.
  • the invention provides a large-area quartz wafer grinding device and its grinding method. It adopts a single-side grinding device to carry out rough grinding and finishing processing on two surfaces respectively, and through the improved design of two aspects of material removal and substrate holding, it can achieve The purpose of ensuring that the processed surface shape of a large-area quartz wafer meets the design requirements.
  • the present invention adopts the following technical solutions:
  • a large-area quartz wafer grinding device is provided with a base, a support arm assembly, a grinding disc, a rotating seat, a rotating motor, a loading block, and a repairing ring; the base is a square base arranged on a horizontal plane.
  • the support arm assembly is installed at both ends of the diagonal line of the base;
  • the support arm assembly includes a swing arm, a swing arm shaft, a swing arm motor, an adjustable arm and a roller, the lower end of the swing arm shaft is connected with the swing arm motor, and the swing arm
  • the upper end of the shaft is fixedly assembled with one end of the swing arm, the middle part of the swing arm is fitted with one end of the adjustable arm, and rollers are installed on the other end of the swing arm and the adjustable arm;
  • the grinding disc is installed on the rotating seat;
  • the rotating The seat is driven by a rotating motor;
  • the object-carrying block is set in the repairing ring, and a quartz wafer is bonded on the bottom surface of the object-carrying block.
  • the above-mentioned large-area quartz wafer grinding device is also provided with a dripper, and the dripper is placed on the platform behind the base, and the outlet of the dripping tube of the dripper is located above the center of the grinding disc.
  • the adjustable arm is an arc-shaped arm, and an assembly hole with a long hole structure is provided at the middle of the swing arm and at one end of the adjustable arm, and the swing arm and the adjustable arm are connected by a bolt assembly passing through the assembly hole. Arm fixed assembly.
  • the support arm assembly is further provided with a lock button, and the swing arm shaft is fixedly connected to the output shaft of the swing arm motor through the lock button.
  • the bottom surface of the grinding disc is provided with three sets of positioning pins uniformly arranged in the circumferential direction, and the rotating seat is provided with three sets of positioning holes for matching with the positioning pins.
  • a large-area quartz wafer grinding method using the above-mentioned grinding device to complete the large-area quartz wafer surface grinding operation, firstly, the quartz wafer thinned to a certain thickness is bonded to the loading block with wax, and then aluminum oxide, silicon carbide, Boron carbide or diamond performs rough grinding and finishing processing on the two surfaces respectively to remove damage defects on the surface and sub-surface of the quartz wafer, control its surface shape accuracy and sub-surface damage depth, and achieve the required thickness and surface shape accuracy; specific operations Proceed as follows:
  • step d carry out the second grinding of the quartz wafer, after repairing the disk and cleaning, carry out the second grinding of the quartz wafer according to step d;
  • the abrasive hardness selected is higher than 9, the diameter of the abrasive grain is less than 5 ⁇ m, the shape of the abrasive grain is a regular polygon, and the weight ratio of the abrasive grain is 1200#B4C:5.5 %; 1000#SiC: 18.8%; 1000#Al2O3: 75.7%; the weight ratio error is not more than 0.3% of the total weight of the abrasive.
  • the weight of the loading block is 5Kg
  • the rotation speed of the grinding disc is 50 rpm
  • the disc repairing and grinding time is 20 minutes.
  • the weight of the loading block is 5Kg
  • the rotation speed of the grinding disc is 50 rpm
  • the grinding time is 30 minutes.
  • the weight of the loading block is 5Kg
  • the rotation speed of the grinding disc is 50 rpm
  • the grinding time is 15 minutes.
  • the invention provides a large-area quartz wafer grinding device, which drives the grinding disc to rotate through the rotating motor and the rotating seat, drives the swing arm to swing left and right through the swing arm motor and the swing arm shaft, and then pushes the disc repair ring and the sleeve on the swing arm through the rollers on the swing arm.
  • the loading block in the disk repairing ring moves on the grinding disc, so as to realize the grinding of the quartz wafer surface bonded on the bottom surface of the loading block; the large-area quartz wafer grinding device of the present invention can adjust the loading block Adjust the pressure applied on the quartz wafer to remove the surface and subsurface damage defects of the quartz wafer, and control its surface shape accuracy and subsurface damage depth.
  • the present invention also provides a large-area quartz wafer grinding method, which aims at rough grinding and fine grinding of the two surfaces by using abrasive materials of different particle sizes such as aluminum oxide, silicon carbide, boron carbide or diamond. , realize the grinding process of large-area quartz wafers, and achieve the purpose of ensuring that the processed surface shape of large-area quartz wafers meets the design requirements.
  • abrasive materials of different particle sizes such as aluminum oxide, silicon carbide, boron carbide or diamond.
  • Fig. 1 is the schematic diagram of large-area quartz wafer grinding device of the present invention
  • Fig. 2 is the top view of Fig. 1;
  • Fig. 3 is a schematic diagram of the assembly relationship of the disk repairing ring, the loading block and the quartz wafer;
  • Fig. 4 is the bottom view of Fig. 3;
  • Fig. 5 and Fig. 6 are schematic diagrams of the working process of the large-area quartz wafer grinding device.
  • Base 2. Support arm assembly, 2-1. Swing arm motor, 2-2. Swing arm, 2-3. Adjustable arm, 2-4. Swing arm shaft, 2-5. Roller, 2- 6.
  • the large-area quartz wafer grinding device is provided with a base 1, a support arm assembly 2, a grinding disc 3, a rotating seat 4, a rotating motor 5, a loading Block 9, disk repairing ring 6 and drop feeder;
  • base 1 is the square base that is arranged on the horizontal plane, supports arm assembly 2 is installed at the two ends of base 1 diagonal, the platform at base 1 rear
  • the dripper is arranged on the top; the outlet of the dripping tube 8 of the dripper is located above the center position of the grinding disc 3; the grinding disc 3 is installed on the rotating seat 4, and three sets of edge
  • the positioning pins are evenly arranged in the circumferential direction, and three sets of positioning holes are provided on the rotating base 4 to cooperate with the positioning pins; the rotating base 4 is driven by the rotating motor 5; the loading block 9 is set on the repairing ring 6 Among them, several groups of quartz wafers 7 are bonded on the bottom surface of the loading block 9 .
  • the support arm assembly 2 includes a swing arm 2-2, a swing arm shaft 2-4, a swing arm motor 2-1, an adjustable arm 2-3, Roller 2-5 and lock button 2-7, the lower end of described swing arm shaft 2-4 is fixedly connected with the output shaft of swing arm motor 2-1 through lock button 2-7, and the upper end of swing arm shaft 2-4 is connected with One end of the swing arm 2-2 is fixedly assembled, the middle part of the swing arm 2-2 is fitted with one end of the adjustable arm 2-3, and the other ends of the swing arm 2-2 and the adjustable arm 2-3 are equipped with rollers 2-5
  • the adjustable arm 2-3 is an arc-shaped arm, and an assembly hole with a long hole structure is provided at the middle part of the swing arm 2-2 and one end of the adjustable arm 2-3, and the bolt assembly 2-6 passing through the assembly hole will The swing arm 2-2 is fixedly assembled with the adjustable arm 2-3.
  • the large-area quartz wafer grinding method of the present invention adopts above-mentioned grinding device to finish the large-area quartz wafer surface grinding operation, at first the quartz wafer 7 that is thinned to a certain thickness is bonded on the carrier with wax.
  • the above-mentioned abrasives are alumina, silicon carbide, boron carbide, etc., the hardness of the abrasive is higher than 9, the diameter of the abrasive grain is less than 5 ⁇ m, the shape of the abrasive grain is a regular polygon, and the weight ratio of the abrasive grain is 1200#B4C: 5.5%; 1000#SiC: 18.8%; 1000#Al2O3: 75.7%; the weight ratio error is not greater than 0.3% of the total weight of the abrasive.
  • the specific operation steps are as follows:
  • grinding disc repairing adjust the position of dripping tube 8, open the dripping device, after dripping an appropriate amount of abrasive on the grinding disc 3, put the spare loading block 9 (the weight of the loading block 9 is 5Kg), Put the disc repairing ring 6 on the outside of the loading block 9, reset the rotating speed of the grinding device to zero, open the grinding device, adjust the rotation speed of the rotating motor 5 to 50rpm, and adjust the swing arm motor 2-1 to the maximum speed, and start the grinding process.
  • the grinding disc 3 is repaired, and the grinding time is 20 minutes. After the disc repairing, clean the grinding disc 3, the loading block 9, and the repairing ring 6 with clean water, and then install the grinding disc 3 according to step b;

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

一种大面积石英晶片研磨装置及研磨方法，所述研磨装置设有基座、支撑臂组件、研磨盘、旋转座、旋转电机、载物块和修盘环；所述基座为布置在水平面上的方形基座，在基座对角线的两端安装支撑臂组件；所述支撑臂组件包括摆臂、摆臂轴、摆臂电机、可调节臂和滚轮，所述摆臂轴下端与摆臂电机连接，摆臂轴的上端与摆臂一端固定装配，所述摆臂中部与可调节臂一端配装，在摆臂及可调节臂的另一端均安装滚轮；所述研磨盘安装在旋转座上；所述旋转座由旋转电机驱动运转；所述载物块套装在修盘环中，在载物块底面上粘接石英晶片。本发明通过对材料去除和基片固持两方面的改进设计，达到保证大面积石英晶片的加工面形满足设计要求的目的。

Description

一种大面积石英晶片研磨装置及其研磨方法 技术领域
本发明涉及一种石英晶片研磨装置及其研磨方法，尤其是一种针对大面积石英晶片的研磨装置及其研磨方法。
背景技术
石英单晶体薄基片(简称石英晶片)是石英晶体振荡器的核心部件，其性能指标(例如石英晶体的频率值)是影响石英晶体振荡器产品质量的重要因素，在角度一定的情况下，石英晶片表面质量与厚度决定了它频率的大小，石英晶片良好的表面质量，可有效地改善谐振器的力-频特性，石英晶片表面任何微小缺陷都会影响元器件的工作精度和可靠性，因此对石英晶片的加工精度提出了纳米级要求。
在石英晶片的加工过程中，可通过研磨用来满足工件平面度的要求，后续再进行抛光加工，用来去除研磨引入的损伤，达到超光滑表面。固结磨料双面研磨是兼顾高表面质量和高面形精度的有效加工方法，能够改善加工过程中石蜡的粘结误差及加工基片两个表面应力差引起的变形问题，但大面积石英晶体薄基片径厚比大、厚度较薄，双面研磨时大面积石英晶体薄基片与研磨盘的紧密接触会使加工过程中的阻力增大，从而引起薄基片的破损。因此，双面研磨主要适用于较厚基片的超精密加工，并不适用于加工石英晶体薄基片。
发明内容
本发明提供一种大面积石英晶片研磨装置及其研磨方法，它采用单面研磨装置分别对两个表面进行粗研和精研加工，通过对材料去除和基片固持两方面的改进设计，达到保证大面积石英晶片的加工面形满足设计要求的目的。
为实现上述目的，本发明采用如下技术方案：
一种大面积石英晶片研磨装置，设有基座、支撑臂组件、研磨盘、旋转座、旋转电机、载物块和修盘环；所述基座为布置在水平面上的方形基座，在基座对角线的两端安装支撑臂组件；所述支撑臂组件包括摆臂、摆臂轴、摆臂电机、可调节臂和滚轮，所述摆臂轴下端与摆臂电机连接，摆臂轴的上端与摆臂一端固定装配，所述摆臂中部与可调节臂一端配装，在摆臂及可调节臂的另一端均安装滚轮；所述研磨盘安装在旋转座上；所述旋转座由旋转电机驱动运转；所述载物块套装在修盘环中，在载物块底面上粘接石英晶片。
上述大面积石英晶片研磨装置，还设有滴料器，所述滴料器置于基座后方的平台上，滴料器的滴料管出料口位于研磨盘中心位置的上方。
上述大面积石英晶片研磨装置，所述可调节臂为弧形臂，在摆臂中部与可调节臂一端均设置长孔结构的装配孔，通过穿过装配孔的螺栓组件将摆臂与可调节臂固定装配。
上述大面积石英晶片研磨装置，所述支撑臂组件还设有锁止钮，摆臂轴通过锁止钮实现与摆臂电机输出轴固定连接。
上述大面积石英晶片研磨装置，所述研磨盘底面设有三组沿周向均匀布置的定位销，在所述旋转座上设有与定位销配合的三组定位孔。
一种大面积石英晶片研磨方法，采用上述研磨装置完成大面积石英晶片表面研磨作业，首先将减薄到一定厚度的石英晶片用蜡粘接在载物块上，再用氧化铝、碳化硅、碳化硼或金刚石对两个表面分别进行粗研和精研加工，去除石英晶片表面及亚表面损伤缺陷，控制其面形精度及亚表面的损伤深度，达到要求的厚度和面形精度；具体操作步骤如下：
a、粘样，将载物块、石英晶片放到加热平台上加热至80℃，然后在载物块一个端面上均匀地涂上石蜡，再将若干石英晶片均匀地放在载物块上，轻轻挤压，排除气泡及多余的石蜡，取下载物块，在上面压上有重力的物体进行冷却，然后使用酒精将薄片边缘多余的石蜡清理干净；
b、研磨机调试，将两个支撑臂组件中的锁止钮松开，摆臂移至基座的外侧，将研磨盘放置在旋转座上，通过三个定位销与旋转座上的三个定位孔定位，然后移回两个摆臂，调整每一组支撑臂组件中的两个滚轮角度为90°～150°，并上下移动摆臂，使摆臂上的滚轮位于修盘环高度二分之一处，再以修盘环为基准调整可调节臂的轴向位置，使得在可调节臂移动至最外侧时，修盘环能够探出研磨盘，在可调节臂移动至最内侧时，修盘环能够经过研磨盘中心，然后将锁止钮锁紧。
c、研磨盘修盘，调整好滴料管位置，打开滴料器，在研磨盘上滴上适量磨料后，放上备用的载物块并套上修盘环，将研磨装置的转速归零，打开研磨装置，调节旋转电机转速，并将摆臂电机调节至最大速度，开始对研磨盘进行修盘，修盘结束后，用清水清洗研磨盘、载物块、修盘环，再按照步骤b将研磨盘安装好；
d、进行石英晶片的研磨，通过滴料器在研磨盘上滴上适量磨料，将粘有石英晶片的载物块倒置在研磨盘上，套上修盘环，设定研磨时间后打开研磨装置，调节旋转电机转速和摆臂电机速度，使研磨盘旋转，在支撑臂组件中滚轮带动下载物块横向往复移动，直到设定研磨时间后研磨装置停止运行；
e、再次对研磨盘修盘，取下载物块、修盘环和研磨盘，用清水清洗， 再按照步骤c进行再次修盘；
f、进行石英晶片的第二次研磨，修盘、清洗完成后，按照步骤d对石英晶片进行第二次研磨；
g、清洗，研磨结束后，用清水清洗粘有薄片的载物块、修盘环、研磨盘，再使用酒精清洗薄片及其周围。
上述大面积石英晶片研磨方法，在所述步骤c至步骤f中，选用的磨料硬度高于9，磨粒直径小于5μm，磨粒形状均为正多边形，磨料重量配比为1200#B4C：5.5％；1000#SiC：18.8％；1000#Al2O3：75.7％；重量配比误差均不大于磨料总重的0.3％.
上述大面积石英晶片研磨方法，在所述步骤c中，载物块重量为5Kg，研磨盘转速50rpm，修盘研磨时间为20分钟。
上述大面积石英晶片研磨方法，在所述步骤d中，载物块重量为5Kg，研磨盘转速50rpm，研磨时间为30分钟。
上述大面积石英晶片研磨方法，在所述步骤f中，载物块重量为5Kg，研磨盘转速50rpm，研磨时间为15分钟。
本发明提供一种大面积石英晶片研磨装置，通过旋转电机、旋转座带动研磨盘旋转，通过摆臂电机、摆臂轴带动摆臂左右摆动，再通过摆臂上滚轮推动修盘环及套装在修盘环中的载物块在研磨盘上移动，以此实现对粘接在载物块底面上的石英晶片表面的研磨；本发明所述的大面积石英晶片研磨装置可通过调节载物块的重量来调整施加在石英晶片上的压力，以去除石英晶片表面及亚表面损伤缺陷，控制其面形精度及亚表面的损伤深度。本发明还提供一种大面积石英晶片研磨方法，旨在通过大面积石英晶 片研磨装置，采用不同粒度的磨料氧化铝、碳化硅、碳化硼或金刚石对两个表面分别进行粗研和精研加工，实现大面积石英晶片的研磨加工，达到保证大面积石英晶片的加工面形满足设计要求的目的。
附图说明
图1是本发明所述大面积石英晶片研磨装置示意图；
图2是图1的俯视图；
图3是修盘环、载物块及石英晶片装配关系示意图；
图4是图3的仰视图；
图5、图6是大面积石英晶片研磨装置工作过程示意图。
图中各标号清单为：
1、基座；2、支撑臂组件，2-1、摆臂电机，2-2、摆臂，2-3、可调节臂，2-4、摆臂轴，2-5、滚轮,2-6、螺栓组件，2-7、锁止钮；3、研磨盘；4、转盘；5、旋转电机；6、修盘环；7、石英晶片；8、滴料管；9、载物块。
具体实施方式
下面结合附图及具体实施例对本发明作进一步说明。
参看图1、图2、图3、图4，本发明所述的大面积石英晶片研磨装置，设有基座1、支撑臂组件2、研磨盘3、旋转座4、旋转电机5、载物块9、修盘环6和滴料器；所述基座1为布置在水平面上的方形基座，在基座1对角线的两端安装支撑臂组件2，在基座1后方的平台上布置滴料器；所述滴料器的滴料管8出料口位于研磨盘3中心位置的上方；所述研磨盘3安装在旋转座4上，在研磨盘3的底面设有三组沿周向均匀布置的定位销，并在旋转座4上设有与定位销配合的三组定位孔；所述旋转座4由旋转电机5驱动运转；所述载物块9套装在修盘环6中，在载物块9的底面上粘接若干组石英晶片7。
参看图2，本发明所述的大面积石英晶片研磨装置，所述支撑臂组件2包括摆臂2-2、摆臂轴2-4、摆臂电机2-1、可调节臂2-3、滚轮2-5和锁止钮2-7，所述摆臂轴2-4下端通过锁止钮2-7实现与摆臂电机2-1输出 轴固定连接，摆臂轴2-4的上端与摆臂2-2一端固定装配，所述摆臂2-2中部与可调节臂2-3一端配装，在摆臂2-2及可调节臂2-3的另一端均安装滚轮2-5；所述可调节臂2-3为弧形臂，在摆臂2-2中部与可调节臂2-3一端均设置长孔结构的装配孔，通过穿过装配孔的螺栓组件2-6将摆臂2-2与可调节臂2-3固定装配。
参看图5、图6，本发明所述的大面积石英晶片研磨方法，它采用上述研磨装置完成大面积石英晶片表面研磨作业，首先将减薄到一定厚度的石英晶片7用蜡粘接在载物块9上，再用氧化铝、碳化硅、碳化硼或金刚石对两个表面分别进行粗研和精研加工，去除石英晶片7的表面及亚表面损伤缺陷，控制其面形精度及亚表面的损伤深度，达到要求的厚度和面形精度；上述磨料为氧化铝、碳化硅、碳化硼等，磨料硬度高于9，磨粒直径小于5μm，磨粒形状均为正多边形，磨料重量配比为1200#B4C：5.5％；1000#SiC：18.8％；1000#Al2O3：75.7％；重量配比误差均不大于磨料总重的0.3％。具体操作步骤如下：
a、粘样，将载物块9、石英晶片7放到加热平台上加热至80℃，然后在载物块9一个端面上均匀地涂上石蜡，再将若干石英晶片7均匀地放在载物块9上，轻轻挤压，排除气泡及多余的石蜡，取下载物块9，在上面压上有重力的物体进行冷却，然后使用酒精将薄片边缘多余的石蜡清理干净；
b、研磨机调试，将两个支撑臂组件2中的锁止钮2-7松开，摆臂2-2移至基座1的外侧，将研磨盘3放置在旋转座4上，通过三个定位销与旋转座上的三个定位孔定位，然后移回两个摆臂2-2，调整每一组支撑臂组件2中的两个滚轮2-5角度为90°～150°，并上下移动摆臂2-2，使滚轮2-5位于修盘环高度二分之一处，再以修盘环6为基准调整可调节臂2-3的轴向位置，使得在可调节臂2-3移动至最外侧时，修盘环6能够探出研磨盘3，在可调节臂2-3移动至最内侧时，修盘环6能够经过研磨盘3中心，然后将锁止钮2-7锁紧。
c、研磨盘修盘，调整好滴料管8位置，打开滴料器，在研磨盘3上 滴上适量磨料后，放上备用的载物块9(载物块9的重量为5Kg)，在载物块9的外面并套上修盘环6，将研磨装置的转速归零，打开研磨装置，调节旋转电机5转速为50rpm，并将摆臂电机2-1调节至最大速度，开始对研磨盘3进行修盘，修盘研磨时间为20分钟，修盘结束后，用清水清洗研磨盘3、载物块9、修盘环6，再按照步骤b将研磨盘3安装好；
d、进行石英晶片的研磨，通过滴料器在研磨盘上滴上适量磨料，将粘有石英晶片7的载物块9(载物块9的重量为5Kg)倒置在研磨盘3上，套上修盘环6，设定研磨时间后打开研磨装置，调节旋转电机5转速为50rpm，并将摆臂电机2-1调节至最大速度，使研磨盘3旋转，在支撑臂组件2中滚轮2-5带动下载物块9横向往复移动，研磨30分钟后研磨装置停止运行；
e、再次对研磨盘修盘，取下载物块9、修盘环6和研磨盘3，用清水清洗，再按照步骤c进行再次修盘；
f、进行石英晶片的第二次研磨，修盘、清洗完成后，按照步骤d对石英晶片7进行第二次研磨，研磨时间为15分钟；
g、清洗，第二次研磨结束后，用清水清洗粘有石英晶片7的载物块9、修盘环6、研磨盘3，再使用酒精清洗石英晶片7及其周。

Claims (8)

  1. 一种大面积石英晶片研磨方法，其特征在于：它采用研磨装置完成大面积石英晶片表面研磨作业，所述研磨装置设有基座(1)、支撑臂组件(2)、研磨盘(3)、旋转座(4)、旋转电机(5)、载物块(9)和修盘环(6)；所述基座(1)为布置在水平面上的方形基座，在基座(1)对角线的两端安装支撑臂组件(2)；所述支撑臂组件(2)包括摆臂(2-2)、摆臂轴(2-4)、摆臂电机(2-1)、可调节臂(2-3)和滚轮(2-5)，所述摆臂轴(2-4)下端与摆臂电机(2-1)连接，摆臂轴(2-4)的上端与摆臂(2-2)一端固定装配，所述摆臂(2-2)中部与可调节臂(2-3)一端配装，在摆臂(2-2)及可调节臂(2-3)的另一端均安装滚轮(2-5)；所述研磨盘(3)安装在旋转座(4)上；所述旋转座(4)由旋转电机(5)驱动运转；所述载物块(9)套装在修盘环(6)中，在载物块(9)底面上粘接石英晶片(7)；
    首先将减薄到一定厚度的石英晶片(7)用蜡粘接在载物块(9)上，再通过不同粒度的磨料(氧化铝、碳化硅、碳化硼或金刚石等)对两个表面分别进行粗研和精研加工，去除石英晶片(7)表面及亚表面损伤缺陷，控制其面形精度及亚表面的损伤深度，达到要求的厚度和面形精度；
    选用的磨料硬度高于9，磨粒直径小于5μm，磨粒形状均为正多边形，磨料重量配比为1200#B4C：5.5％；1000#SiC：18.8％；1000#Al2O3：75.7％；重量配比误差均不大于磨料总重的0.3％；
    具体操作步骤如下：
    a、粘样，将载物块(9)、石英晶片(7)放到加热平台上加热至80℃，然后在载物块(9)一个端面上均匀地涂上石蜡，再将若干石英晶片(7)均匀地放在载物块(9)上，轻轻挤压，排除气泡及多余的石蜡，取下载物块(9)，在上面压上有重力的物体进行冷却，然后使用酒精将薄片边缘多余的石蜡清理干净；
    b、研磨机调试，将两个支撑臂组件(2)中的锁止钮(2-7)松开，摆臂(2-2)移至基座(1)的外侧，将研磨盘(3)放置在旋转座(4)上，通过三个定位销与旋转座上的三个定位孔定位，然后移回两个摆臂(2-2)， 调整每一组支撑臂组件(2)中的两个滚轮(2-5)角度为90°～150°，并上下移动摆臂(2-2)，使滚轮(2-5)位于修盘环高度二分之一处，再以修盘环(6)为基准调整可调节臂(2-3)的轴向位置，使得在可调节臂(2-3)移动至最外侧时，修盘环(6)能够探出研磨盘(3)，在可调节臂(2-3)移动至最内侧时，修盘环(6)能够经过研磨盘(3)中心，然后将锁止钮(2-7)锁紧；
    c、研磨盘修盘，调整好滴料管(8)位置，打开滴料器，在研磨盘(3)上滴上适量磨料后，放上备用的载物块(9)并套上修盘环(6)，将研磨装置的转速归零，打开研磨装置，调节旋转电机(5)转速，并将摆臂电机(2-1)调节至最大速度，开始对研磨盘(3)进行修盘，修盘结束后，用清水清洗研磨盘(3)、载物块(9)、修盘环(6)，再按照步骤b将研磨盘(3)安装好；
    d、进行石英晶片的研磨，通过滴料器在研磨盘上滴上适量磨料，将粘有石英晶片(7)的载物块(9)倒置在研磨盘(3)上，套上修盘环(6)，设定研磨时间后打开研磨装置，调节旋转电机(5)转速和摆臂电机(2-1)速度，使研磨盘(3)旋转，在支撑臂组件(2)中滚轮(2-5)带动下载物块(9)横向往复移动，直到设定研磨时间后研磨装置停止运行；
    e、再次对研磨盘修盘，取下载物块(9)、修盘环(6)和研磨盘(3)，用清水清洗，再按照步骤c进行再次修盘；
    f、进行石英晶片的第二次研磨，修盘、清洗完成后，按照步骤d对石英晶片(7)进行第二次研磨；
    g、清洗，第二次研磨结束后，用清水清洗粘有石英晶片(7)的载物块(9)、修盘环(6)、研磨盘(3)，再使用酒精清洗石英晶片(7)及其周围。
  2. 根据权利要求1所述的大面积石英晶片研磨方法，其特征是：在所述步骤c中，载物块(9)重量为5Kg，研磨盘(3)转速50rpm，修盘研磨时间为20分钟。
  3. 根据权利要求1所述的大面积石英晶片研磨方法，其特征是：在所述步骤d中，载物块(9)重量为5Kg，研磨盘(3)转速50rpm，研磨 时间为30分钟。
  4. 根据权利要求1所述的大面积石英晶片研磨方法，其特征是：在所述步骤f中，载物块(9)重量为5Kg，研磨盘(3)转速50rpm，研磨时间为15分钟。
  5. 根据权利要求1所述的大面积石英晶片研磨方法，其特征在于：大面积石英晶片研磨装置还设有滴料器，所述滴料器置于基座(1)后方的平台上，滴料器的滴料管(8)出料口位于研磨盘(3)中心位置的上方。
  6. 根据权利要求5所述的大面积石英晶片研磨方法，其特征在于：大面积石英晶片研磨装置的所述可调节臂(2-3)为弧形臂，在摆臂(2-2)中部与可调节臂(2-3)一端均设置长孔结构的装配孔，通过穿过装配孔的螺栓组件(2-6)将摆臂(2-2)与可调节臂(2-3)固定装配。
  7. 根据权利要求6所述的大面积石英晶片研磨方法，其特征在于：大面积石英晶片研磨装置的所述支撑臂组件(2)还设有锁止钮，摆臂轴(2-4)通过锁止钮(2-7)实现与摆臂电机(2-1)输出轴固定连接。
  8. 根据权利要求7所述的大面积石英晶片研磨方法，其特征在于：大面积石英晶片研磨装置的所述研磨盘(3)底面设有三组沿周向均匀布置的定位销，在所述旋转座(4)上设有与定位销配合的三组定位孔。
PCT/CN2022/139437 2021-12-20 2022-12-16 一种大面积石英晶片研磨装置及其研磨方法 WO2023116555A1 (zh)

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