CN1096108C - 硅片的制造装置 - Google Patents
硅片的制造装置 Download PDFInfo
- Publication number
- CN1096108C CN1096108C CN96110121A CN96110121A CN1096108C CN 1096108 C CN1096108 C CN 1096108C CN 96110121 A CN96110121 A CN 96110121A CN 96110121 A CN96110121 A CN 96110121A CN 1096108 C CN1096108 C CN 1096108C
- Authority
- CN
- China
- Prior art keywords
- grinding
- mentioned
- silicon chip
- grinding tool
- pallet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/003—Multipurpose machines; Equipment therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Mining & Mineral Resources (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP191171/95 | 1995-07-03 | ||
JP19117195 | 1995-07-03 | ||
JP441596 | 1996-01-12 | ||
JP004415/96 | 1996-01-12 | ||
JP08978496A JP3923107B2 (ja) | 1995-07-03 | 1996-04-11 | シリコンウェーハの製造方法およびその装置 |
JP089784/96 | 1996-04-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1145531A CN1145531A (zh) | 1997-03-19 |
CN1096108C true CN1096108C (zh) | 2002-12-11 |
Family
ID=27276263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96110121A Expired - Lifetime CN1096108C (zh) | 1995-07-03 | 1996-07-03 | 硅片的制造装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP3923107B2 (zh) |
KR (1) | KR100457718B1 (zh) |
CN (1) | CN1096108C (zh) |
DE (1) | DE19626396B4 (zh) |
TW (1) | TW303488B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1301184C (zh) * | 2003-12-16 | 2007-02-21 | 汪开庆 | 加工半导体用兰宝石晶体基片的光学研磨机及其加工方法 |
CN102026774A (zh) * | 2008-05-22 | 2011-04-20 | 信越半导体股份有限公司 | 两头磨削装置及芯片的制造方法 |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3620554B2 (ja) * | 1996-03-25 | 2005-02-16 | 信越半導体株式会社 | 半導体ウェーハ製造方法 |
JP2002346918A (ja) * | 2001-05-29 | 2002-12-04 | Speedfam Co Ltd | 両面研磨装置 |
DE10132504C1 (de) | 2001-07-05 | 2002-10-10 | Wacker Siltronic Halbleitermat | Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung |
DE10142400B4 (de) * | 2001-08-30 | 2009-09-03 | Siltronic Ag | Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung |
FR2850966B1 (fr) | 2003-02-10 | 2005-03-18 | Rhodia Polyamide Intermediates | Procede de fabrication de composes dinitriles |
FR2854891B1 (fr) | 2003-05-12 | 2006-07-07 | Rhodia Polyamide Intermediates | Procede de preparation de dinitriles |
EP1948591A1 (en) | 2005-10-18 | 2008-07-30 | INVISTA Technologies S.à.r.l. | Process of making 3-aminopentanenitrile |
BRPI0709313A2 (pt) | 2006-03-17 | 2011-07-05 | Invista Tech Sarl | método de separação e método para a preparação de triorganofosfitos |
DE102006062872B4 (de) * | 2006-07-13 | 2012-06-14 | Peter Wolters Gmbh | Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben |
DE102006062871B4 (de) * | 2006-07-13 | 2012-06-21 | Peter Wolters Gmbh | Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben |
US7919646B2 (en) | 2006-07-14 | 2011-04-05 | Invista North America S.A R.L. | Hydrocyanation of 2-pentenenitrile |
DE102007056628B4 (de) * | 2007-03-19 | 2019-03-14 | Siltronic Ag | Verfahren und Vorrichtung zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben |
CN101687658B (zh) | 2007-05-14 | 2013-07-24 | 因温斯特技术公司 | 高效反应器和方法 |
WO2008157218A1 (en) | 2007-06-13 | 2008-12-24 | Invista Technologies S.A.R.L. | Process for improving adiponitrile quality |
EP2229353B1 (en) | 2008-01-15 | 2018-01-03 | INVISTA Textiles (U.K.) Limited | Hydrocyanation of pentenenitriles |
CN101910119B (zh) | 2008-01-15 | 2013-05-29 | 因温斯特技术公司 | 用于制备和精制3-戊烯腈,和用于精制2-甲基-3-丁烯腈的方法 |
JP5600867B2 (ja) * | 2008-06-16 | 2014-10-08 | 株式会社Sumco | 半導体ウェーハの製造方法 |
JP2009302409A (ja) * | 2008-06-16 | 2009-12-24 | Sumco Corp | 半導体ウェーハの製造方法 |
JP5619753B2 (ja) | 2008-10-14 | 2014-11-05 | インヴィスタテクノロジーズ エスアエルエル | 2−第二級−アルキル−4,5−ジ−(直鎖−アルキル)フェノール類を製造する方法 |
DE102009025242B4 (de) * | 2009-06-17 | 2013-05-23 | Siltronic Ag | Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe |
CN102471218B (zh) | 2009-08-07 | 2014-11-05 | 因温斯特技术公司 | 用于形成二酯的氢化并酯化 |
CN101708593B (zh) * | 2009-12-08 | 2013-01-09 | 中国电子科技集团公司第四十五研究所 | 化学机械抛光心轴传动装置 |
CN101875181B (zh) * | 2010-05-31 | 2012-02-22 | 青岛理工大学 | 脆硬材料磨削机床 |
CN101972983B (zh) * | 2010-08-11 | 2013-01-09 | 中国电子科技集团公司第四十五研究所 | 化学机械抛光心轴装置 |
CN102172885B (zh) * | 2011-01-31 | 2013-05-15 | 北京通美晶体技术有限公司 | 衬底的抛光装置及其抛光的衬底 |
CN102179734A (zh) * | 2011-03-14 | 2011-09-14 | 刘晓明 | 超硬刀片钝化抛光机 |
CN102229093B (zh) * | 2011-07-01 | 2013-09-18 | 中国电子科技集团公司第四十五研究所 | 一种应用在晶片抛光设备上的升降加压机构 |
DE102011089570A1 (de) | 2011-12-22 | 2013-06-27 | Siltronic Ag | Führungskäfig zum beidseitigen Schleifen von mindestens einem scheibenförmigen Werkstück zwischen zwei rotierenden Arbeitsscheiben einer Schleifvorrichtung, Verfahren zur Herstellung des Führungskäfigs und Verfahren zum gleichzeitigen beidseitigen Schleifen von scheibenförmigen Werkstücken unter Verwendung des Führungskäfigs |
CN103123865B (zh) * | 2013-02-26 | 2015-05-27 | 宁波韵升股份有限公司 | 一种磁性产品加工方法及自动分选设备 |
CN104669105B (zh) * | 2013-11-26 | 2017-12-29 | 浙江汇锋塑胶科技有限公司 | 一种蓝宝石触摸面板的两面研磨方法 |
CN103817572A (zh) * | 2014-02-18 | 2014-05-28 | 河南机电高等专科学校 | 一种离合器摩擦钢片修复装置 |
CN103847032B (zh) * | 2014-03-20 | 2016-01-06 | 德清晶辉光电科技有限公司 | 一种大直径超薄石英晶片的生产工艺 |
JP6707831B2 (ja) * | 2015-10-09 | 2020-06-10 | 株式会社Sumco | 研削装置および研削方法 |
JP6792363B2 (ja) * | 2016-07-22 | 2020-11-25 | 株式会社ディスコ | 研削装置 |
CN106425857A (zh) * | 2016-11-18 | 2017-02-22 | 南京华东电子信息科技股份有限公司 | 一种新型中小型单片液晶面板抛光固定治具 |
CN107543837B (zh) * | 2017-08-25 | 2020-02-21 | 郑州磨料磨具磨削研究所有限公司 | 一种砂轮精磨后硅片损伤层的检测方法 |
TWI656233B (zh) * | 2017-10-26 | 2019-04-11 | 漢民科技股份有限公司 | 單晶圓處理裝置及其操作方法、傳送方法與準直器 |
CN108544329A (zh) * | 2018-04-09 | 2018-09-18 | 中国工程物理研究院材料研究所 | 一种表面抛磨装置及其应用 |
WO2020056538A1 (zh) * | 2018-09-17 | 2020-03-26 | 苏州迈创信息技术有限公司 | 自动研磨机 |
CN113752111B (zh) * | 2021-09-30 | 2023-11-21 | 浙江仲全数控科技有限公司 | 一种立式双端面磨床 |
CN113815127B (zh) * | 2021-10-20 | 2023-06-02 | 山东中恒建设集团有限公司 | 一种建筑施工用物料周转切割装置 |
CN115008318A (zh) * | 2022-06-16 | 2022-09-06 | 南京工业职业技术大学 | 一种气动加载式双面环抛机 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5113622A (en) * | 1989-03-24 | 1992-05-19 | Sumitomo Electric Industries, Ltd. | Apparatus for grinding semiconductor wafer |
JPH04307935A (ja) * | 1991-04-05 | 1992-10-30 | Fujikoshi Kikai Kogyo Kk | ウエハーの両面同時研削方法とその装置 |
JPH06155450A (ja) * | 1992-11-19 | 1994-06-03 | Sumitomo Metal Ind Ltd | マルチワイヤソーによる切断方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5840265A (ja) * | 1981-08-28 | 1983-03-09 | Toshiba Corp | 両面ポリシング装置 |
JPS5972139A (ja) * | 1982-10-18 | 1984-04-24 | Toshiba Corp | 薄板材の加工方法 |
JPS59107854A (ja) * | 1982-12-08 | 1984-06-22 | Hitachi Ltd | ウエハの両面同時研磨方法 |
JPS59169758A (ja) * | 1983-03-15 | 1984-09-25 | Toshiba Corp | ウエハの研磨装置 |
JPS6384860A (ja) * | 1986-09-26 | 1988-04-15 | Hitachi Ltd | 表面加工装置 |
KR900001724B1 (ko) * | 1987-09-28 | 1990-03-19 | 주식회사 한국삼기 | 평면연마장치 |
JPH06103678B2 (ja) * | 1987-11-28 | 1994-12-14 | 株式会社東芝 | 半導体基板の加工方法 |
JP2555000B2 (ja) * | 1989-01-18 | 1996-11-20 | 鐘紡株式会社 | 硬脆材料の研磨方法 |
JP2674665B2 (ja) * | 1989-03-24 | 1997-11-12 | 住友電気工業株式会社 | 半導体ウェーハの研削装置 |
JPH0667070A (ja) * | 1992-08-24 | 1994-03-11 | Furukawa Electric Co Ltd:The | 半導体レーザモジュール |
JP2839801B2 (ja) * | 1992-09-18 | 1998-12-16 | 三菱マテリアル株式会社 | ウェーハの製造方法 |
US5389579A (en) * | 1993-04-05 | 1995-02-14 | Motorola, Inc. | Method for single sided polishing of a semiconductor wafer |
JP3047670B2 (ja) * | 1993-04-08 | 2000-05-29 | トヨタ自動車株式会社 | 電気自動車用エンジン駆動発電機の制御装置 |
-
1996
- 1996-04-11 JP JP08978496A patent/JP3923107B2/ja not_active Expired - Fee Related
- 1996-05-15 TW TW085105754A patent/TW303488B/zh not_active IP Right Cessation
- 1996-05-31 KR KR1019960019031A patent/KR100457718B1/ko active IP Right Grant
- 1996-07-01 DE DE19626396A patent/DE19626396B4/de not_active Expired - Lifetime
- 1996-07-03 CN CN96110121A patent/CN1096108C/zh not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5113622A (en) * | 1989-03-24 | 1992-05-19 | Sumitomo Electric Industries, Ltd. | Apparatus for grinding semiconductor wafer |
JPH04307935A (ja) * | 1991-04-05 | 1992-10-30 | Fujikoshi Kikai Kogyo Kk | ウエハーの両面同時研削方法とその装置 |
JPH06155450A (ja) * | 1992-11-19 | 1994-06-03 | Sumitomo Metal Ind Ltd | マルチワイヤソーによる切断方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1301184C (zh) * | 2003-12-16 | 2007-02-21 | 汪开庆 | 加工半导体用兰宝石晶体基片的光学研磨机及其加工方法 |
CN102026774A (zh) * | 2008-05-22 | 2011-04-20 | 信越半导体股份有限公司 | 两头磨削装置及芯片的制造方法 |
CN102026774B (zh) * | 2008-05-22 | 2013-04-17 | 信越半导体股份有限公司 | 两头磨削装置及芯片的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1145531A (zh) | 1997-03-19 |
TW303488B (zh) | 1997-04-21 |
DE19626396B4 (de) | 2006-12-07 |
JP3923107B2 (ja) | 2007-05-30 |
KR100457718B1 (ko) | 2005-04-06 |
DE19626396A1 (de) | 1997-01-16 |
JPH09248740A (ja) | 1997-09-22 |
KR970008384A (ko) | 1997-02-24 |
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ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: MITSUBISHI MATERIALS CORP. |
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C41 | Transfer of patent application or patent right or utility model | ||
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Owner name: SUMCO CORP. Free format text: FORMER NAME: MITSUBISHI MATERIALS SILICON CORP. |
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CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Co-patentee after: Mitsubishi Materials Corp. Patentee after: SUMCO Corp. Address before: Tokyo, Japan Co-patentee before: Mitsubishi Materials Corp. Patentee before: SUMITOMO MITSUBISHI SILICON Corp. |
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TR01 | Transfer of patent right |
Effective date of registration: 20111031 Address after: Tokyo, Japan Patentee after: SUMCO Corp. Address before: Tokyo, Japan Co-patentee before: Mitsubishi Materials Corp. Patentee before: Sumco Corp. Effective date of registration: 20111031 Address after: Tokyo, Japan Co-patentee after: Mitsubishi Materials Corp. Patentee after: SUMITOMO MITSUBISHI SILICON Corp. Address before: Tokyo, Japan Co-patentee before: Mitsubishi Materials Corp. Patentee before: Sumitomo Mitsubishi Silicon Corp. |
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CX01 | Expiry of patent term |
Granted publication date: 20021211 |
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EXPY | Termination of patent right or utility model |