KR100457718B1 - 실리콘웨이퍼의제조방법과그장치 - Google Patents

실리콘웨이퍼의제조방법과그장치 Download PDF

Info

Publication number
KR100457718B1
KR100457718B1 KR1019960019031A KR19960019031A KR100457718B1 KR 100457718 B1 KR100457718 B1 KR 100457718B1 KR 1019960019031 A KR1019960019031 A KR 1019960019031A KR 19960019031 A KR19960019031 A KR 19960019031A KR 100457718 B1 KR100457718 B1 KR 100457718B1
Authority
KR
South Korea
Prior art keywords
silicon wafer
grinding
grindstone
double
carrier
Prior art date
Application number
KR1019960019031A
Other languages
English (en)
Korean (ko)
Other versions
KR970008384A (ko
Inventor
케이이찌 타나카
오사무 카가야
토오루 하타나카
Original Assignee
미쓰비시 마테리알 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 마테리알 가부시키가이샤 filed Critical 미쓰비시 마테리알 가부시키가이샤
Publication of KR970008384A publication Critical patent/KR970008384A/ko
Application granted granted Critical
Publication of KR100457718B1 publication Critical patent/KR100457718B1/ko

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/003—Multipurpose machines; Equipment therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
KR1019960019031A 1995-07-03 1996-05-31 실리콘웨이퍼의제조방법과그장치 KR100457718B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP95-191171 1995-07-03
JP19117195 1995-07-03
JP96-004415 1996-01-12
JP441596 1996-01-12
JP96-089784 1996-04-11
JP08978496A JP3923107B2 (ja) 1995-07-03 1996-04-11 シリコンウェーハの製造方法およびその装置

Publications (2)

Publication Number Publication Date
KR970008384A KR970008384A (ko) 1997-02-24
KR100457718B1 true KR100457718B1 (ko) 2005-04-06

Family

ID=27276263

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960019031A KR100457718B1 (ko) 1995-07-03 1996-05-31 실리콘웨이퍼의제조방법과그장치

Country Status (5)

Country Link
JP (1) JP3923107B2 (zh)
KR (1) KR100457718B1 (zh)
CN (1) CN1096108C (zh)
DE (1) DE19626396B4 (zh)
TW (1) TW303488B (zh)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3620554B2 (ja) * 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
JP2002346918A (ja) * 2001-05-29 2002-12-04 Speedfam Co Ltd 両面研磨装置
DE10132504C1 (de) * 2001-07-05 2002-10-10 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung
DE10142400B4 (de) * 2001-08-30 2009-09-03 Siltronic Ag Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung
FR2850966B1 (fr) 2003-02-10 2005-03-18 Rhodia Polyamide Intermediates Procede de fabrication de composes dinitriles
FR2854891B1 (fr) 2003-05-12 2006-07-07 Rhodia Polyamide Intermediates Procede de preparation de dinitriles
CN1301184C (zh) * 2003-12-16 2007-02-21 汪开庆 加工半导体用兰宝石晶体基片的光学研磨机及其加工方法
ES2532982T3 (es) 2005-10-18 2015-04-06 Invista Technologies S.À.R.L. Proceso de preparación de 3-aminopentanonitrilo
CZ2008547A3 (cs) 2006-03-17 2009-06-10 Invista Technologies S. A. R. L. Zpusob purifikace triorganofosfitu ošetrením bazickým aditivem
DE102006062871B4 (de) * 2006-07-13 2012-06-21 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
DE102006062872B4 (de) * 2006-07-13 2012-06-14 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
US7919646B2 (en) 2006-07-14 2011-04-05 Invista North America S.A R.L. Hydrocyanation of 2-pentenenitrile
DE102007056627B4 (de) * 2007-03-19 2023-12-21 Lapmaster Wolters Gmbh Verfahren zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
US8906334B2 (en) 2007-05-14 2014-12-09 Invista North America S.A R.L. High efficiency reactor and process
CN101952004B (zh) 2007-06-13 2015-08-12 因温斯特技术公司 改善己二腈质量的方法
EP2229353B1 (en) 2008-01-15 2018-01-03 INVISTA Textiles (U.K.) Limited Hydrocyanation of pentenenitriles
CN101910119B (zh) 2008-01-15 2013-05-29 因温斯特技术公司 用于制备和精制3-戊烯腈，和用于精制2-甲基-3-丁烯腈的方法
JP4780142B2 (ja) * 2008-05-22 2011-09-28 信越半導体株式会社 ウェーハの製造方法
JP2009302409A (ja) * 2008-06-16 2009-12-24 Sumco Corp 半導体ウェーハの製造方法
JP5600867B2 (ja) * 2008-06-16 2014-10-08 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
KR101610423B1 (ko) 2008-10-14 2016-04-08 인비스타 테크놀러지스 에스.에이 알.엘. 2-ｓｅｃ-알킬-4,5-디-(ｎ-알킬)페놀의 제조 방법
DE102009025242B4 (de) * 2009-06-17 2013-05-23 Siltronic Ag Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe
WO2011017543A1 (en) 2009-08-07 2011-02-10 Invista Technologies S.A. R.L. Hydrogenation and esterification to form diesters
CN101708593B (zh) * 2009-12-08 2013-01-09 中国电子科技集团公司第四十五研究所 化学机械抛光心轴传动装置
CN101875181B (zh) * 2010-05-31 2012-02-22 青岛理工大学 脆硬材料磨削机床
CN101972983B (zh) * 2010-08-11 2013-01-09 中国电子科技集团公司第四十五研究所 化学机械抛光心轴装置
CN102172885B (zh) * 2011-01-31 2013-05-15 北京通美晶体技术有限公司 衬底的抛光装置及其抛光的衬底
CN102179734A (zh) * 2011-03-14 2011-09-14 刘晓明 超硬刀片钝化抛光机
CN102229093B (zh) * 2011-07-01 2013-09-18 中国电子科技集团公司第四十五研究所 一种应用在晶片抛光设备上的升降加压机构
DE102011089570A1 (de) 2011-12-22 2013-06-27 Siltronic Ag Führungskäfig zum beidseitigen Schleifen von mindestens einem scheibenförmigen Werkstück zwischen zwei rotierenden Arbeitsscheiben einer Schleifvorrichtung, Verfahren zur Herstellung des Führungskäfigs und Verfahren zum gleichzeitigen beidseitigen Schleifen von scheibenförmigen Werkstücken unter Verwendung des Führungskäfigs
CN103123865B (zh) * 2013-02-26 2015-05-27 宁波韵升股份有限公司 一种磁性产品加工方法及自动分选设备
CN104669105B (zh) * 2013-11-26 2017-12-29 浙江汇锋塑胶科技有限公司 一种蓝宝石触摸面板的两面研磨方法
CN103817572A (zh) * 2014-02-18 2014-05-28 河南机电高等专科学校 一种离合器摩擦钢片修复装置
CN103847032B (zh) * 2014-03-20 2016-01-06 德清晶辉光电科技有限公司 一种大直径超薄石英晶片的生产工艺
JP6707831B2 (ja) 2015-10-09 2020-06-10 株式会社Sumco 研削装置および研削方法
JP6792363B2 (ja) * 2016-07-22 2020-11-25 株式会社ディスコ 研削装置
CN106425857A (zh) * 2016-11-18 2017-02-22 南京华东电子信息科技股份有限公司 一种新型中小型单片液晶面板抛光固定治具
CN107543837B (zh) * 2017-08-25 2020-02-21 郑州磨料磨具磨削研究所有限公司 一种砂轮精磨后硅片损伤层的检测方法
TWI656233B (zh) * 2017-10-26 2019-04-11 漢民科技股份有限公司 單晶圓處理裝置及其操作方法、傳送方法與準直器
CN108544329A (zh) * 2018-04-09 2018-09-18 中国工程物理研究院材料研究所 一种表面抛磨装置及其应用
WO2020056538A1 (zh) * 2018-09-17 2020-03-26 苏州迈创信息技术有限公司 自动研磨机
JP7217409B2 (ja) * 2020-01-24 2023-02-03 株式会社東京精密 亀裂進展装置及び亀裂進展方法
CN112692722A (zh) * 2020-12-24 2021-04-23 江苏天科合达半导体有限公司 打磨设备、打磨盘的加工方法以及碳化硅晶片的加工方法
CN113752111B (zh) * 2021-09-30 2023-11-21 浙江仲全数控科技有限公司 一种立式双端面磨床
CN113815127B (zh) * 2021-10-20 2023-06-02 山东中恒建设集团有限公司 一种建筑施工用物料周转切割装置
CN115008318A (zh) * 2022-06-16 2022-09-06 南京工业职业技术大学 一种气动加载式双面环抛机

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840265A (ja) * 1981-08-28 1983-03-09 Toshiba Corp 両面ポリシング装置
JPS5972139A (ja) * 1982-10-18 1984-04-24 Toshiba Corp 薄板材の加工方法
KR890004828A (ko) * 1987-09-28 1989-05-10 정홍헌 평면 연마장치
JPH01143218A (ja) * 1987-11-28 1989-06-05 Toshiba Corp 半導体基板の加工方法
JPH02250771A (ja) * 1989-03-24 1990-10-08 Sumitomo Electric Ind Ltd 半導体ウェーハの研削装置
JPH06104229A (ja) * 1992-09-18 1994-04-15 Mitsubishi Materials Corp ウェーハの製造方法
US5389579A (en) * 1993-04-05 1995-02-14 Motorola, Inc. Method for single sided polishing of a semiconductor wafer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107854A (ja) * 1982-12-08 1984-06-22 Hitachi Ltd ウエハの両面同時研磨方法
JPS59169758A (ja) * 1983-03-15 1984-09-25 Toshiba Corp ウエハの研磨装置
JPS6384860A (ja) * 1986-09-26 1988-04-15 Hitachi Ltd 表面加工装置
JP2555000B2 (ja) * 1989-01-18 1996-11-20 鐘紡株式会社 硬脆材料の研磨方法
AU637087B2 (en) * 1989-03-24 1993-05-20 Sumitomo Electric Industries, Ltd. Apparatus for grinding semiconductor wafer
JPH0740565B2 (ja) * 1991-04-05 1995-05-01 不二越機械工業株式会社 ウエハーの両面同時研削方法とその装置
JPH0667070A (ja) * 1992-08-24 1994-03-11 Furukawa Electric Co Ltd:The 半導体レーザモジュール
JP2722975B2 (ja) * 1992-11-19 1998-03-09 住友金属工業株式会社 マルチワイヤソーによる切断方法
JP3047670B2 (ja) * 1993-04-08 2000-05-29 トヨタ自動車株式会社 電気自動車用エンジン駆動発電機の制御装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840265A (ja) * 1981-08-28 1983-03-09 Toshiba Corp 両面ポリシング装置
JPS5972139A (ja) * 1982-10-18 1984-04-24 Toshiba Corp 薄板材の加工方法
KR890004828A (ko) * 1987-09-28 1989-05-10 정홍헌 평면 연마장치
KR900001724B1 (ko) * 1987-09-28 1990-03-19 주식회사 한국삼기 평면연마장치
JPH01143218A (ja) * 1987-11-28 1989-06-05 Toshiba Corp 半導体基板の加工方法
JPH02250771A (ja) * 1989-03-24 1990-10-08 Sumitomo Electric Ind Ltd 半導体ウェーハの研削装置
JPH06104229A (ja) * 1992-09-18 1994-04-15 Mitsubishi Materials Corp ウェーハの製造方法
US5389579A (en) * 1993-04-05 1995-02-14 Motorola, Inc. Method for single sided polishing of a semiconductor wafer

Also Published As

Publication number Publication date
CN1145531A (zh) 1997-03-19
KR970008384A (ko) 1997-02-24
DE19626396A1 (de) 1997-01-16
JPH09248740A (ja) 1997-09-22
JP3923107B2 (ja) 2007-05-30
TW303488B (zh) 1997-04-21
CN1096108C (zh) 2002-12-11
DE19626396B4 (de) 2006-12-07

Similar Documents

Publication Publication Date Title
KR100457718B1 (ko) 실리콘웨이퍼의제조방법과그장치
JP3620554B2 (ja) 半導体ウェーハ製造方法
US6093087A (en) Wafer processing machine and a processing method thereby
EP1755156B1 (en) Process for producing silicon wafers
KR101605384B1 (ko) 양두 연삭 장치 및 웨이퍼의 제조 방법
CN110181355B (zh) 一种研磨装置、研磨方法及晶圆
TWI774805B (zh) 晶圓加工方法
JP3271658B2 (ja) 半導体シリコン単結晶ウェーハのラップ又は研磨方法
JP5517156B2 (ja) インゴットブロックの複合面取り加工装置
CN110010458B (zh) 控制半导体晶圆片表面形貌的方法和半导体晶片
EP1145296B1 (en) Semiconductor wafer manufacturing method
US5643405A (en) Method for polishing a semiconductor substrate
JPH10180624A (ja) ラッピング装置及び方法
JP2010194680A (ja) ワーク加工方法およびワーク加工装置
JP2002217149A (ja) ウエーハの研磨装置及び研磨方法
JP3138205B2 (ja) 高脆性材の両面研削装置
CN109571232B (zh) 晶圆研磨方法及其研磨系统
KR101328775B1 (ko) 실리콘 에피택셜 웨이퍼의 제조 방법
US6969302B1 (en) Semiconductor wafer grinding method
KR101390800B1 (ko) 웨이퍼 가공 장치 및 이를 이용한 웨이퍼 가공 방법
KR100555049B1 (ko) 웨이퍼 형상의 피가공물 가공 방법
KR101125740B1 (ko) 웨이퍼 연마 장치
CN111975627A (zh) 非规则碲锌镉晶片的研磨方法
KR20080113682A (ko) 웨이퍼용 연마 휠 및 이를 갖는 웨이퍼 이면 연마 장치
JP7525268B2 (ja) 平面研削装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
G170 Publication of correction
FPAY Annual fee payment

Payment date: 20131104

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20141105

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20151030

Year of fee payment: 12