KR100457718B1 - 실리콘웨이퍼의제조방법과그장치 - Google Patents

실리콘웨이퍼의제조방법과그장치 Download PDF

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Publication number
KR100457718B1
KR100457718B1 KR1019960019031A KR19960019031A KR100457718B1 KR 100457718 B1 KR100457718 B1 KR 100457718B1 KR 1019960019031 A KR1019960019031 A KR 1019960019031A KR 19960019031 A KR19960019031 A KR 19960019031A KR 100457718 B1 KR100457718 B1 KR 100457718B1
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KR
South Korea
Prior art keywords
silicon wafer
grinding
grindstone
double
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019960019031A
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English (en)
Korean (ko)
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KR970008384A (ko
Inventor
케이이찌 타나카
오사무 카가야
토오루 하타나카
Original Assignee
미쓰비시 마테리알 가부시키가이샤
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Publication of KR970008384A publication Critical patent/KR970008384A/ko
Application granted granted Critical
Publication of KR100457718B1 publication Critical patent/KR100457718B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/003—Multipurpose machines; Equipment therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
KR1019960019031A 1995-07-03 1996-05-31 실리콘웨이퍼의제조방법과그장치 Expired - Lifetime KR100457718B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP95-191171 1995-07-03
JP19117195 1995-07-03
JP441596 1996-01-12
JP96-004415 1996-01-12
JP08978496A JP3923107B2 (ja) 1995-07-03 1996-04-11 シリコンウェーハの製造方法およびその装置
JP96-089784 1996-04-11

Publications (2)

Publication Number Publication Date
KR970008384A KR970008384A (ko) 1997-02-24
KR100457718B1 true KR100457718B1 (ko) 2005-04-06

Family

ID=27276263

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960019031A Expired - Lifetime KR100457718B1 (ko) 1995-07-03 1996-05-31 실리콘웨이퍼의제조방법과그장치

Country Status (5)

Country Link
JP (1) JP3923107B2 (enExample)
KR (1) KR100457718B1 (enExample)
CN (1) CN1096108C (enExample)
DE (1) DE19626396B4 (enExample)
TW (1) TW303488B (enExample)

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JP3620554B2 (ja) * 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
JP2002346918A (ja) * 2001-05-29 2002-12-04 Speedfam Co Ltd 両面研磨装置
DE10132504C1 (de) 2001-07-05 2002-10-10 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung
DE10142400B4 (de) * 2001-08-30 2009-09-03 Siltronic Ag Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung
FR2850966B1 (fr) 2003-02-10 2005-03-18 Rhodia Polyamide Intermediates Procede de fabrication de composes dinitriles
FR2854891B1 (fr) 2003-05-12 2006-07-07 Rhodia Polyamide Intermediates Procede de preparation de dinitriles
CN1301184C (zh) * 2003-12-16 2007-02-21 汪开庆 加工半导体用兰宝石晶体基片的光学研磨机及其加工方法
EP2322503B1 (en) 2005-10-18 2014-12-31 Invista Technologies S.à.r.l. Process of making 3-aminopentanenitrile
PL387008A1 (pl) 2006-03-17 2009-05-11 Invista Technologies S.A.R.L. Sposób oczyszczania triorganofosforynów przez obróbkę dodatkiem zasadowym
DE102006062872B4 (de) * 2006-07-13 2012-06-14 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
DE102006062871B4 (de) * 2006-07-13 2012-06-21 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
US7919646B2 (en) 2006-07-14 2011-04-05 Invista North America S.A R.L. Hydrocyanation of 2-pentenenitrile
DE102007056627B4 (de) 2007-03-19 2023-12-21 Lapmaster Wolters Gmbh Verfahren zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
EP2146930A2 (en) 2007-05-14 2010-01-27 INVISTA Technologies S.à.r.l. High efficiency reactor and process
EP2164587B1 (en) 2007-06-13 2018-04-04 INVISTA Textiles (U.K.) Limited Process for improving adiponitrile quality
CN101910119B (zh) 2008-01-15 2013-05-29 因温斯特技术公司 用于制备和精制3-戊烯腈，和用于精制2-甲基-3-丁烯腈的方法
WO2009091790A1 (en) 2008-01-15 2009-07-23 Invista Technologies S.A.R.L. Hydrocyanation of pentenenitriles
JP4780142B2 (ja) * 2008-05-22 2011-09-28 信越半導体株式会社 ウェーハの製造方法
JP5600867B2 (ja) * 2008-06-16 2014-10-08 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
JP2009302409A (ja) * 2008-06-16 2009-12-24 Sumco Corp 半導体ウェーハの製造方法
KR101610423B1 (ko) 2008-10-14 2016-04-08 인비스타 테크놀러지스 에스.에이 알.엘. 2-ｓｅｃ-알킬-4,5-디-(ｎ-알킬)페놀의 제조 방법
DE102009025242B4 (de) * 2009-06-17 2013-05-23 Siltronic Ag Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe
KR20120047251A (ko) 2009-08-07 2012-05-11 인비스타 테크놀러지스 에스.에이.알.엘. 디에스테르를 형성하기 위한 수소화 및 에스테르화
CN101708593B (zh) * 2009-12-08 2013-01-09 中国电子科技集团公司第四十五研究所 化学机械抛光心轴传动装置
CN101875181B (zh) * 2010-05-31 2012-02-22 青岛理工大学 脆硬材料磨削机床
CN101972983B (zh) * 2010-08-11 2013-01-09 中国电子科技集团公司第四十五研究所 化学机械抛光心轴装置
CN102172885B (zh) * 2011-01-31 2013-05-15 北京通美晶体技术有限公司 衬底的抛光装置及其抛光的衬底
CN102179734A (zh) * 2011-03-14 2011-09-14 刘晓明 超硬刀片钝化抛光机
CN102229093B (zh) * 2011-07-01 2013-09-18 中国电子科技集团公司第四十五研究所 一种应用在晶片抛光设备上的升降加压机构
DE102011089570A1 (de) 2011-12-22 2013-06-27 Siltronic Ag Führungskäfig zum beidseitigen Schleifen von mindestens einem scheibenförmigen Werkstück zwischen zwei rotierenden Arbeitsscheiben einer Schleifvorrichtung, Verfahren zur Herstellung des Führungskäfigs und Verfahren zum gleichzeitigen beidseitigen Schleifen von scheibenförmigen Werkstücken unter Verwendung des Führungskäfigs
CN103123865B (zh) * 2013-02-26 2015-05-27 宁波韵升股份有限公司 一种磁性产品加工方法及自动分选设备
CN104669105B (zh) * 2013-11-26 2017-12-29 浙江汇锋塑胶科技有限公司 一种蓝宝石触摸面板的两面研磨方法
CN103817572A (zh) * 2014-02-18 2014-05-28 河南机电高等专科学校 一种离合器摩擦钢片修复装置
CN103847032B (zh) * 2014-03-20 2016-01-06 德清晶辉光电科技有限公司 一种大直径超薄石英晶片的生产工艺
JP6707831B2 (ja) * 2015-10-09 2020-06-10 株式会社Sumco 研削装置および研削方法
JP6792363B2 (ja) * 2016-07-22 2020-11-25 株式会社ディスコ 研削装置
CN106425857A (zh) * 2016-11-18 2017-02-22 南京华东电子信息科技股份有限公司 一种新型中小型单片液晶面板抛光固定治具
CN107543837B (zh) * 2017-08-25 2020-02-21 郑州磨料磨具磨削研究所有限公司 一种砂轮精磨后硅片损伤层的检测方法
TWI656233B (zh) * 2017-10-26 2019-04-11 漢民科技股份有限公司 單晶圓處理裝置及其操作方法、傳送方法與準直器
CN108544329A (zh) * 2018-04-09 2018-09-18 中国工程物理研究院材料研究所 一种表面抛磨装置及其应用
DE212018000039U1 (de) * 2018-09-17 2018-10-23 Suzhou Maichuang Information Technology Co., Ltd. Automatische Schleifmaschine
JP7217409B2 (ja) * 2020-01-24 2023-02-03 株式会社東京精密 亀裂進展装置及び亀裂進展方法
CN112692722A (zh) * 2020-12-24 2021-04-23 江苏天科合达半导体有限公司 打磨设备、打磨盘的加工方法以及碳化硅晶片的加工方法
CN113752111B (zh) * 2021-09-30 2023-11-21 浙江仲全数控科技有限公司 一种立式双端面磨床
CN113815127B (zh) * 2021-10-20 2023-06-02 山东中恒建设集团有限公司 一种建筑施工用物料周转切割装置
CN115008318B (zh) * 2022-06-16 2025-03-28 南京工业职业技术大学 一种气动加载式双面环抛机
CN116652707A (zh) * 2023-06-30 2023-08-29 中原内配集团鼎锐科技有限公司 一种刀具钝化设备及其钝化加工方法
CN116967852B (zh) * 2023-07-18 2026-01-02 家颖科技(苏州)有限公司 一种陶瓷打磨方法
CN117564818A (zh) * 2023-12-07 2024-02-20 中国航发贵州黎阳航空动力有限公司 内端面高精密度磨削方法及磨削用标准块、标准块制备方法

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Publication number Priority date Publication date Assignee Title
JPS5840265A (ja) * 1981-08-28 1983-03-09 Toshiba Corp 両面ポリシング装置
JPS5972139A (ja) * 1982-10-18 1984-04-24 Toshiba Corp 薄板材の加工方法
KR890004828A (ko) * 1987-09-28 1989-05-10 정홍헌 평면 연마장치
JPH01143218A (ja) * 1987-11-28 1989-06-05 Toshiba Corp 半導体基板の加工方法
JPH02250771A (ja) * 1989-03-24 1990-10-08 Sumitomo Electric Ind Ltd 半導体ウェーハの研削装置
JPH06104229A (ja) * 1992-09-18 1994-04-15 Mitsubishi Materials Corp ウェーハの製造方法
US5389579A (en) * 1993-04-05 1995-02-14 Motorola, Inc. Method for single sided polishing of a semiconductor wafer

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JP2555000B2 (ja) * 1989-01-18 1996-11-20 鐘紡株式会社 硬脆材料の研磨方法
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JPH0740565B2 (ja) * 1991-04-05 1995-05-01 不二越機械工業株式会社 ウエハーの両面同時研削方法とその装置
JPH0667070A (ja) * 1992-08-24 1994-03-11 Furukawa Electric Co Ltd:The 半導体レーザモジュール
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Publication number Priority date Publication date Assignee Title
JPS5840265A (ja) * 1981-08-28 1983-03-09 Toshiba Corp 両面ポリシング装置
JPS5972139A (ja) * 1982-10-18 1984-04-24 Toshiba Corp 薄板材の加工方法
KR890004828A (ko) * 1987-09-28 1989-05-10 정홍헌 평면 연마장치
KR900001724B1 (ko) * 1987-09-28 1990-03-19 주식회사 한국삼기 평면연마장치
JPH01143218A (ja) * 1987-11-28 1989-06-05 Toshiba Corp 半導体基板の加工方法
JPH02250771A (ja) * 1989-03-24 1990-10-08 Sumitomo Electric Ind Ltd 半導体ウェーハの研削装置
JPH06104229A (ja) * 1992-09-18 1994-04-15 Mitsubishi Materials Corp ウェーハの製造方法
US5389579A (en) * 1993-04-05 1995-02-14 Motorola, Inc. Method for single sided polishing of a semiconductor wafer

Also Published As

Publication number Publication date
JPH09248740A (ja) 1997-09-22
CN1096108C (zh) 2002-12-11
JP3923107B2 (ja) 2007-05-30
CN1145531A (zh) 1997-03-19
KR970008384A (ko) 1997-02-24
DE19626396A1 (de) 1997-01-16
TW303488B (enExample) 1997-04-21
DE19626396B4 (de) 2006-12-07

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