CN109478514A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN109478514A
CN109478514A CN201780043080.0A CN201780043080A CN109478514A CN 109478514 A CN109478514 A CN 109478514A CN 201780043080 A CN201780043080 A CN 201780043080A CN 109478514 A CN109478514 A CN 109478514A
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CN
China
Prior art keywords
insulator
barrier layer
oxide
film
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201780043080.0A
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English (en)
Chinese (zh)
Inventor
山根靖正
仓田求
方堂凉太
石山贵久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to CN202211629502.1A priority Critical patent/CN115799342A/zh
Publication of CN109478514A publication Critical patent/CN109478514A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
CN201780043080.0A 2016-07-26 2017-07-13 半导体装置 Pending CN109478514A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211629502.1A CN115799342A (zh) 2016-07-26 2017-07-13 半导体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2016146342 2016-07-26
JP2016-146342 2016-07-26
JP2017-026908 2017-02-16
JP2017026908 2017-02-16
PCT/IB2017/054229 WO2018020350A1 (en) 2016-07-26 2017-07-13 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202211629502.1A Division CN115799342A (zh) 2016-07-26 2017-07-13 半导体装置

Publications (1)

Publication Number Publication Date
CN109478514A true CN109478514A (zh) 2019-03-15

Family

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Family Applications (2)

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CN201780043080.0A Pending CN109478514A (zh) 2016-07-26 2017-07-13 半导体装置
CN202211629502.1A Pending CN115799342A (zh) 2016-07-26 2017-07-13 半导体装置

Family Applications After (1)

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Country Status (6)

Country Link
US (1) US10236390B2 (enrdf_load_stackoverflow)
JP (1) JP6995523B2 (enrdf_load_stackoverflow)
KR (2) KR20190032414A (enrdf_load_stackoverflow)
CN (2) CN109478514A (enrdf_load_stackoverflow)
TW (1) TWI731121B (enrdf_load_stackoverflow)
WO (1) WO2018020350A1 (enrdf_load_stackoverflow)

Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN114127932A (zh) * 2019-07-12 2022-03-01 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
US11362034B2 (en) 2018-04-04 2022-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a laminate contact plug of specified configuration including a conductive metal oxide layer

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TWI737665B (zh) * 2016-07-01 2021-09-01 日商半導體能源硏究所股份有限公司 半導體裝置以及半導體裝置的製造方法
KR20190032414A (ko) * 2016-07-26 2019-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN111316448A (zh) * 2017-11-09 2020-06-19 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
JPWO2019166921A1 (ja) 2018-03-02 2021-02-12 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP7235418B2 (ja) * 2018-05-18 2023-03-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2020047732A (ja) * 2018-09-18 2020-03-26 キオクシア株式会社 磁気記憶装置
WO2020084415A1 (ja) * 2018-10-26 2020-04-30 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11211461B2 (en) 2018-12-28 2021-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US11289475B2 (en) * 2019-01-25 2022-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
WO2020208458A1 (ja) * 2019-04-12 2020-10-15 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11349023B2 (en) * 2019-10-01 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integration of p-channel and n-channel E-FET III-V devices without parasitic channels
KR102819716B1 (ko) * 2020-06-12 2025-06-13 삼성전자주식회사 3차원 반도체 장치 및 반도체 장치의 제조방법
JP2023118505A (ja) * 2022-02-15 2023-08-25 キオクシア株式会社 半導体装置
CN119404607A (zh) * 2022-06-17 2025-02-07 株式会社半导体能源研究所 半导体装置、存储装置
CN120570082A (zh) * 2023-01-20 2025-08-29 株式会社半导体能源研究所 半导体装置

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US11362034B2 (en) 2018-04-04 2022-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a laminate contact plug of specified configuration including a conductive metal oxide layer
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KR102613288B1 (ko) 2023-12-12
CN115799342A (zh) 2023-03-14
KR20190032414A (ko) 2019-03-27
KR20220080017A (ko) 2022-06-14
TW201816988A (zh) 2018-05-01
US20180033892A1 (en) 2018-02-01
TWI731121B (zh) 2021-06-21
WO2018020350A1 (en) 2018-02-01
JP6995523B2 (ja) 2022-01-14
JP2018133550A (ja) 2018-08-23
US10236390B2 (en) 2019-03-19

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Application publication date: 20190315