JP6995523B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6995523B2 JP6995523B2 JP2017140493A JP2017140493A JP6995523B2 JP 6995523 B2 JP6995523 B2 JP 6995523B2 JP 2017140493 A JP2017140493 A JP 2017140493A JP 2017140493 A JP2017140493 A JP 2017140493A JP 6995523 B2 JP6995523 B2 JP 6995523B2
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- insulator
- oxide
- film
- conductor
- transistor
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Description
本実施の形態では、半導体装置の一形態を、図1乃至図11を用いて説明する。
以下では、本発明の一態様に係る半導体装置の一例について説明する。図1(A)、図1(B)、および図1(C)は、本発明の一態様に係るトランジスタ200、およびトランジスタ200と電気的に接続するプラグの上面図および断面図である。図1(A)は上面図であり、図1(B)は、図1(A)に示す一点鎖線L1-L2、図1(C)は、一点鎖線W1-W2に対応する断面図である。なお、図1(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
以下では、トランジスタ200の一例について説明する。
以下に、本発明に係る酸化物230について説明する。酸化物230として、酸化物半導体として機能する金属酸化物(以下、酸化物半導体ともいう)を用いることが好ましい。
以下では、本発明の一態様で開示されるトランジスタに用いることができるCAC(Cloud-Aligned Composite)-OSの構成について説明する。
酸化物半導体は、単結晶酸化物半導体と、それ以外の非単結晶酸化物半導体と、に分けられる。非単結晶酸化物半導体としては、例えば、CAAC-OS(c-axis aligned crystalline oxide semiconductor)、多結晶酸化物半導体、nc-OS(nanocrystalline oxide semiconductor)、擬似非晶質酸化物半導体(a-like OS:amorphous-like oxide semiconductor)および非晶質酸化物半導体などがある。
続いて、上記酸化物半導体をトランジスタに用いる場合について説明する。
ここで、酸化物半導体中における各不純物の影響について説明する。
以下に、図1に示した半導体装置の作製方法の一例を図2乃至図9を参照して説明する。なお、図中に示すL1-L2は、トランジスタ200のチャネル長方向の断面図である。また、図中に示すW1-W2は、トランジスタ200のチャネル幅方向の断面図である。
図10には、トランジスタ200に適応できる構造の一例を示す。図10(A)はトランジスタ200の上面を示す。なお、図の明瞭化のため、図10(A)において一部の膜は省略されている。また、図10(B)は、図10(A)に示す一点鎖線L1-L2に対応する断面図であり、図10(C)はW1-W2に対応する断面図である。
図11には、トランジスタ200に適応できる構造の一例を示す。図11(A)はトランジスタ200の上面を示す。なお、図の明瞭化のため、図11(A)において一部の膜は省略されている。また、図11(B)は、図11(A)に示す一点鎖線L1-L2に対応する断面図であり、図11(C)はW1-W2に対応する断面図である。
本実施の形態では、半導体装置の一形態を、図12乃至図15を用いて説明する。
本発明の一態様であるトランジスタ200を使用した、半導体装置(記憶装置)の一例を図12乃至図15に示す。
本発明の一態様の半導体装置は、図12に示すようにトランジスタ300、トランジスタ200、容量素子100を有する。トランジスタ200はトランジスタ300の上方に設けられ、容量素子100はトランジスタ300、およびトランジスタ200の上方に設けられている。
また、本実施の形態の変形例の一例を、図13に示す。図13は、図12と、トランジスタ300の構成が異なる。
本実施の形態のメモリセルアレイの一例を、図14に示す。図14は、図13に示す半導体装置を、マトリクス状に配置した場合における、行の一部を抜き出した回路図である。
本発明の一態様である半導体装置を使用した、記憶装置の一例を図15に示す。
トランジスタ400は、トランジスタ200と同じ層に形成されており、並行して作製することができるトランジスタである。トランジスタ400は、第1のゲート電極として機能する導電体460(導電体460a、および導電体460b)と、第2のゲート電極として機能する導電体405(導電体405a、および導電体405b)と、導電体460と接するバリア層470と、ゲート絶縁層として機能する絶縁体220、絶縁体222、絶縁体224、および絶縁体450と、チャネルが形成される領域を有する酸化物430cと、ソースまたはドレインの一方として機能する導電体440b、酸化物431a、および酸化物431bと、ソースまたはドレインの他方として機能する導電体440a、酸化物432a、および酸化物432bと、を有する。
以下では、本発明の一態様に係る試料1A、試料1B、試料1C、試料1D、試料1E、および試料1Fについて説明する。試料1A乃至試料1Fは、図16(A)に示す構造801、図16(B)に示す構造802、または図16(C)に示す構造803のいずれかを有する。
各試料において、絶縁体814が有する酸素量を測定した。なお、測定方法は、各試料の絶縁体815を除去した後、絶縁体814に対し、TDS分析を行なった。また、当該TDS分析においては、酸素分子に相当する質量電荷比m/z=32の放出量を測定した。TDS分析装置は、電子科学社製WA1000Sを用い、昇温レートは30℃/minとした。測定結果を、図17に示す。
以下では、本発明の一態様に係る試料2A、試料2B、試料2C、および試料2Dについて説明する。試料2A乃至試料2Dは、図18(A)に示す構造804、または図18(B)に示す構造805を有する。
各試料において、水素の脱離量を測定した。また、当該TDS分析においては、水素分子に相当する質量電荷比m/z=2の放出量を測定した。TDS分析装置は、電子科学社製WA1000Sを用い、昇温レートは30℃/minとした。測定結果を、図19に示す。
本項目では、本実施例に用いた試料3Aの構造、および作製方法について、説明する。
試料3Aの断面観察を行った。図20(B)は、試料3Aの走査透過電子顕微鏡(STEM:Scanning Transmission Electron Microscope)による明視野像である。
以下に、試料4A、および試料4Bの作製方法を説明する。
次に、試料4A、および試料4Bの電気特性として、Id-Vg特性を測定した。なお、比較用の従来例4A、および従来例4Bとして、従来の作製方法により半導体装置を作製し、従来例4A、および従来例4Bが有するトランジスタのId-Vg特性を測定した。
以下では、本発明の一態様に係る試料5A、試料5B、試料5C、試料5D、試料5E、試料5F、および比較例について説明する。試料5A、試料5B、試料5C、試料5D、試料5E、および試料5Fは、図22(A)に示す構造806を有する。構造806は、基板830と、基板830上の絶縁体831、絶縁体831上の絶縁体832、絶縁体832上の絶縁体833、絶縁体833上の膜834を有する。
各試料において、酸素の脱離量を測定した。また、当該TDS分析においては、酸素分子に相当する質量電荷比m/z=32の放出量を測定した。TDS分析装置は、電子科学社製WA1000Sを用い、昇温レートは30℃/minとした。測定結果を、図22(B)に示す。
本項目では、本実施例に用いた試料6A、試料6B、および試料6Cの構造、および作製方法について、説明する。
試料6A乃至試料6Cの断面観察を行うために、走査透過電子顕微鏡(STEM:Scanning Transmission Electron Microscope)による明視野像(以下、STEM画像ともいう)を取得した。
次に、試料6A乃至試料6Cにおいて、10種、各9個の構造に対し、導電体740と、導電体746、および導電体748とのケルビンコンタクト抵抗を測定した。その結果を図24(A)に示す。なお、図24(A)において、縦軸はケルビンコンタクト抵抗、横軸は開口の設計時の1辺の長さ[nm]とした。
ここで、試料6Bおよび試料6Cのコンタクト部の周辺領域に対して、元素分析を行った。元素分析は、エネルギー分散型X線分光法(EDX:Energy Dispersive X-ray spectroscopy)を用い、EDXマッピングを取得し、評価することによって、試料6Bおよび試料6Cの元素分析を行った結果について説明する。なお、EDX測定には、元素分析装置としてEDAX製エネルギー分散型X線分析装置Octane T Ultraを用いた。
以下に、試料7A乃至試料7Dの作製方法を説明する。
次に、試料7A乃至試料7Dが有するトランジスタ200の電気特性として、Id-Vg特性を測定した。なお、Id-Vg特性の測定は、トランジスタ200を用いたモジュールを作製するための接続配線を形成する工程の前後で行った。図25には、試料7A乃至試料7Dにおけるトランジスタ200を作製した後のId-Vg特性を示す。図26には、試料7A乃至試料7Dにおいて、トランジスタ200に加え、モジュールを作製するための接続配線を形成した後のトランジスタ200のId-Vg特性を示す。
次に、試料7A乃至試料7Dにおいて、導電体240と、導電体246、および導電体248とのケルビンコンタクト抵抗を測定した。その結果を図27に示す。なお、図27において、縦軸をケルビンコンタクト抵抗とした。
次に、トランジスタの電気特性が良好である試料7Dにおいて、トランジスタの密度が異なる領域のトランジスタ200を用いてストレス試験を行った。なお、各領域において、17424個のトランジスタ200の密度が、1.49個/μm2、2.96個/μm2、3.94個/μm2、または4.96個/μm2とした。
101 容量素子
110 導電体
112 導電体
120 導電体
130 絶縁体
150 絶縁体
200 トランジスタ
201 トランジスタ
205 導電体
205a 導電体
205A 導電膜
205b 導電体
205B 導電膜
210 絶縁体
212 絶縁体
214 絶縁体
216 絶縁体
218 導電体
220 絶縁体
222 絶縁体
224 絶縁体
230 酸化物
230a 酸化物
230A 酸化膜
230b 酸化物
230B 酸化膜
230c 酸化物
230C 酸化膜
240 導電体
240a 導電体
240A 導電膜
240b 導電体
240B 導電膜
244 バリア層
244a バリア層
244A バリア膜
244b バリア層
244B バリア膜
246 導電体
246a 導電体
246A 導電膜
246b 導電体
246c 導電体
248 導電体
248a 導電体
248A 導電膜
248b 導電体
248c 導電体
250 絶縁体
250A 絶縁膜
260 導電体
260a 導電体
260A 導電膜
260b 導電体
260B 導電膜
260c 導電体
270 バリア層
270A バリア膜
272 絶縁体
274 絶縁体
276 バリア層
276a バリア層
276A バリア膜
276b バリア層
276c バリア層
280 絶縁体
280A 絶縁膜
282 絶縁体
284 絶縁体
286 絶縁体
290a ハードマスク
290A 膜
290b ハードマスク
290B 膜
292A 膜
292B ハードマスク
292C ハードマスク
294A 膜
294B ハードマスク
296 レジストマスク
300 トランジスタ
301 トランジスタ
311 基板
313 半導体領域
314a 低抵抗領域
314b 低抵抗領域
315 絶縁体
316 導電体
320 絶縁体
322 絶縁体
324 絶縁体
326 絶縁体
328 導電体
330 導電体
350 絶縁体
352 絶縁体
354 絶縁体
356 導電体
400 トランジスタ
405 導電体
405a 導電体
405b 導電体
430c 酸化物
431a 酸化物
431b 酸化物
432a 酸化物
432b 酸化物
440 導電体
440a 導電体
440b 導電体
450 絶縁体
460 導電体
460a 導電体
460b 導電体
470 バリア層
500 構造
700 構造
702 基板
704 絶縁体
740 導電体
744 絶縁体
746 導電体
748 導電体
776 絶縁体
780 絶縁体
782 絶縁体
786 絶縁体
801 構造
802 構造
803 構造
804 構造
805 構造
806 構造
810 基板
811 絶縁体
812 導電体
813 バリア層
814 絶縁体
815 絶縁体
820 基板
821 絶縁体
822 絶縁体
823 バリア層
830 基板
831 絶縁体
832 絶縁体
833 絶縁体
834 膜
900 構造
902 基板
904 絶縁体
905 導電体
920 絶縁体
922 絶縁体
924 絶縁体
930 酸化物
946 導電体
948 導電体
976 絶縁体
980 絶縁体
982 絶縁体
986 絶縁体
3001 配線
3002 配線
3003 配線
3004 配線
3005 配線
3006 配線
3007 配線
3008 配線
3009 配線
3010 配線
Claims (5)
- 第1の酸化物半導体層と、
前記第1の酸化物半導体層上の第2の酸化物半導体層と、
前記第2の酸化物半導体層上の一対の第1の導電層と、
前記一対の第1の導電層上にそれぞれ配置された一対の第1のバリア層と、
前記一対の第1のバリア層上、及び前記第2の酸化物半導体層上の第3の酸化物半導体層と、
前記第3の酸化物半導体層上の第1の絶縁層と、
前記第1の絶縁層上のゲート電極と、
前記第1の酸化物半導体層の側面、前記第2の酸化物半導体層の側面、前記一対の第1の導電層の側面、前記一対の第1のバリア層の側面、及び前記第3の酸化物半導体層の側面と接する領域を有し、かつ、前記一対の第1のバリア層上、及び前記ゲート電極上に配置された過剰酸素領域を有する第2の絶縁層と、
前記第2の絶縁層上の第2のバリア層と、
前記第2のバリア層上の第3の絶縁層と、
前記第1のバリア層、前記第2の絶縁層、前記第2のバリア層、及び前記第3の絶縁層が有する開口の側壁に面するように配置された第3のバリア層と、
前記第3のバリア層を介して前記開口の側壁に面するように配置された第2の導電層と、
を有し、
前記第1のバリア層、及び前記第3のバリア層は、酸化アルミニウム、酸化ハフニウム、または酸化ガリウムを含み、
前記第2のバリア層は、酸化アルミニウム、または酸化ハフニウムを含むことを特徴とする半導体装置。 - 第1の酸化物半導体層と、
前記第1の酸化物半導体層上の第2の酸化物半導体層と、
前記第2の酸化物半導体層上の一対の第1の導電層と、
前記一対の第1の導電層上にそれぞれ配置された一対の第1のバリア層と、
前記一対の第1のバリア層上、及び前記第2の酸化物半導体層上の第3の酸化物半導体層と、
前記第3の酸化物半導体層上の第1の絶縁層と、
前記第1の絶縁層上のゲート電極と、
前記第1の酸化物半導体層の側面、前記第2の酸化物半導体層の側面、前記一対の第1の導電層の側面、前記一対の第1のバリア層の側面、及び前記第3の酸化物半導体層の側面と接する領域を有し、かつ、前記一対の第1のバリア層上、及び前記ゲート電極上に配置された過剰酸素領域を有する第2の絶縁層と、
前記第2の絶縁層上の第2のバリア層と、
前記第2のバリア層上の第3の絶縁層と、
前記第1のバリア層、前記第2の絶縁層、前記第2のバリア層、及び前記第3の絶縁層が有する開口の側壁に面するように配置された第3のバリア層と、
前記第3のバリア層を介して前記開口の側壁に面するように配置された第2の導電層と、
を有し、
前記開口において、前記第2の導電層は、前記一対の第1の導電層のいずれか一方と接する領域を有し、
前記第1のバリア層、及び前記第3のバリア層は、酸化アルミニウム、酸化ハフニウム、または酸化ガリウムを含み、
前記第2のバリア層は、酸化アルミニウム、または酸化ハフニウムを含むことを特徴とする半導体装置。 - 第1の酸化物半導体層と、
前記第1の酸化物半導体層上の第2の酸化物半導体層と、
前記第2の酸化物半導体層上の一対の第1の導電層と、
前記一対の第1の導電層上にそれぞれ配置された一対の第1のバリア層と、
前記一対の第1のバリア層上、及び前記第2の酸化物半導体層上の第3の酸化物半導体層と、
前記第3の酸化物半導体層上の第1の絶縁層と、
前記第1の絶縁層上のゲート電極と、
前記第1の酸化物半導体層の側面、前記第2の酸化物半導体層の側面、前記一対の第1の導電層の側面、前記一対の第1のバリア層の側面、及び前記第3の酸化物半導体層の側面と接する領域を有し、かつ、前記一対の第1のバリア層上、及び前記ゲート電極上に配置された過剰酸素領域を有する第2の絶縁層と、
前記第2の絶縁層上の第2のバリア層と、
前記第2のバリア層上の第3の絶縁層と、
前記第1のバリア層、前記第2の絶縁層、前記第2のバリア層、及び前記第3の絶縁層が有する開口の側壁に面するように配置された第3のバリア層と、
前記第3のバリア層を介して前記開口の側壁に面するように配置された第2の導電層と、
を有し、
前記第2の酸化物半導体層は、チャネル形成領域を有し、
前記開口において、前記第2の導電層は、前記一対の第1の導電層のいずれか一方と接する領域を有し、
前記第1のバリア層、及び前記第3のバリア層は、酸化アルミニウム、酸化ハフニウム、または酸化ガリウムを含み、
前記第2のバリア層は、酸化アルミニウム、または酸化ハフニウムを含むことを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記第3の酸化物半導体層は、前記第1のバリア層の上面と接する領域を有することを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一において、
前記第1のバリア層は、トランジスタのゲート絶縁膜としての機能を有することを特徴とする半導体装置。
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