CN109273622B - 剥离方法 - Google Patents

剥离方法 Download PDF

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Publication number
CN109273622B
CN109273622B CN201811105357.0A CN201811105357A CN109273622B CN 109273622 B CN109273622 B CN 109273622B CN 201811105357 A CN201811105357 A CN 201811105357A CN 109273622 B CN109273622 B CN 109273622B
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China
Prior art keywords
layer
peeling
substrate
light
adhesive layer
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Expired - Fee Related
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CN201811105357.0A
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Chinese (zh)
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CN109273622A (zh
Inventor
青山智哉
千田章裕
小松立
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
CN201811105357.0A 2013-08-06 2014-07-29 剥离方法 Expired - Fee Related CN109273622B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013-163029 2013-08-06
JP2013163029 2013-08-06
CN201480044272.XA CN105474355B (zh) 2013-08-06 2014-07-29 剥离方法

Related Parent Applications (1)

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CN201480044272.XA Division CN105474355B (zh) 2013-08-06 2014-07-29 剥离方法

Publications (2)

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CN109273622A CN109273622A (zh) 2019-01-25
CN109273622B true CN109273622B (zh) 2021-03-12

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CN201480044272.XA Expired - Fee Related CN105474355B (zh) 2013-08-06 2014-07-29 剥离方法

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US (2) US9735398B2 (enExample)
JP (3) JP2015053479A (enExample)
KR (1) KR102224416B1 (enExample)
CN (2) CN109273622B (enExample)
TW (2) TWI685026B (enExample)
WO (1) WO2015019971A1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5899220B2 (ja) * 2010-09-29 2016-04-06 ポスコ ロール状の母基板を利用したフレキシブル電子素子の製造方法、フレキシブル電子素子及びフレキシブル基板
CN109273622B (zh) * 2013-08-06 2021-03-12 株式会社半导体能源研究所 剥离方法
TWI618131B (zh) 2013-08-30 2018-03-11 半導體能源研究所股份有限公司 剝離起點形成裝置及形成方法、疊層體製造裝置
TWI663722B (zh) 2013-09-06 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 發光裝置以及發光裝置的製造方法
TWI524998B (zh) * 2013-09-25 2016-03-11 友達光電股份有限公司 基板之黏結及分離的方法
US9937698B2 (en) 2013-11-06 2018-04-10 Semiconductor Energy Laboratory Co., Ltd. Peeling method and light-emitting device
US9229481B2 (en) 2013-12-20 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015125046A1 (en) 2014-02-19 2015-08-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and peeling method
JP6289286B2 (ja) 2014-06-25 2018-03-07 株式会社ジャパンディスプレイ 表示装置および表示装置の製造方法
KR102368997B1 (ko) 2014-06-27 2022-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치, 모듈, 전자 기기, 발광 장치의 제작 방법
KR101586996B1 (ko) * 2014-07-11 2016-01-22 한국기계연구원 금속모재 위에 증착된 금속막 분리장치
JP6634283B2 (ja) * 2014-12-29 2020-01-22 株式会社半導体エネルギー研究所 機能パネル
KR102632066B1 (ko) 2015-07-30 2024-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치의 제작 방법, 발광 장치, 모듈, 및 전자 기기
US10259207B2 (en) 2016-01-26 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming separation starting point and separation method
JP6863803B2 (ja) 2016-04-07 2021-04-21 株式会社半導体エネルギー研究所 表示装置
US10279576B2 (en) 2016-04-26 2019-05-07 Semiconductor Energy Laboratory Co., Ltd. Peeling method and manufacturing method of flexible device
KR102378976B1 (ko) * 2016-05-18 2022-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 모듈, 및 전자 기기
CN106019552B (zh) * 2016-06-23 2019-01-11 中国科学院西安光学精密机械研究所 消除被测物体表面盲点的显微镜辅助装置
KR102425705B1 (ko) * 2016-08-31 2022-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US10528198B2 (en) 2016-09-16 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Display panel, display device, input/output device, data processing device, and method for manufacturing the display panel
CN109891551B (zh) * 2016-11-03 2023-12-01 株式会社半导体能源研究所 半导体装置的制造方法
US10103478B1 (en) * 2017-06-23 2018-10-16 Amazon Technologies, Inc. Water resistant connectors with conductive elements
CN110998386B (zh) * 2017-08-16 2022-10-28 Ａｇｃ株式会社 聚合物光波导
KR102179165B1 (ko) * 2017-11-28 2020-11-16 삼성전자주식회사 캐리어 기판 및 상기 캐리어 기판을 이용한 반도체 패키지의 제조방법
JP7242362B2 (ja) * 2019-03-18 2023-03-20 キオクシア株式会社 半導体装置の製造方法
TWI710820B (zh) 2019-03-28 2020-11-21 友達光電股份有限公司 顯示裝置
CN110783253B (zh) * 2019-10-31 2022-05-24 京东方科技集团股份有限公司 一种显示基板的制作方法、显示基板和显示装置
US10849235B1 (en) * 2020-05-20 2020-11-24 Tactotek Oy Method of manufacture of a structure and structure
CN111873605B (zh) * 2020-09-04 2022-04-26 广东华中科技大学工业技术研究院 一种机械爪辅助撕膜装置及撕膜机构
KR102491000B1 (ko) * 2020-09-24 2023-01-26 세메스 주식회사 접착제층 제거 유닛 및 이를 이용하는 접착제층 제거 방법
CN114051453B (zh) * 2021-04-28 2023-08-04 奉贤淏 汽车着色膜蒸汽剥离装置
KR102878738B1 (ko) 2021-07-30 2025-10-30 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN114284460B (zh) * 2021-12-14 2024-04-16 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327836A (ja) * 2003-04-25 2004-11-18 Seiko Epson Corp 被転写体の転写方法、被転写体の製造方法、回路基板の製造方法、電気光学装置、及び電子機器
KR20080029887A (ko) * 2006-09-29 2008-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
JP2012150185A (ja) * 2011-01-17 2012-08-09 Ricoh Co Ltd 電気泳動表示素子の製造方法

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP0848415A1 (en) 1995-08-31 1998-06-17 Nitto Denko Corporation Method and apparatus for peeling protective adhesive tape from semiconductor wafer
CN1132223C (zh) 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法
US6072239A (en) 1995-11-08 2000-06-06 Fujitsu Limited Device having resin package with projections
JP4619462B2 (ja) 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
CN1495523A (zh) 1996-08-27 2004-05-12 ������������ʽ���� 转移方法和有源矩阵基板的制造方法
US6127199A (en) 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
KR100304161B1 (ko) 1996-12-18 2001-11-30 미다라이 후지오 반도체부재의제조방법
US6326279B1 (en) 1999-03-26 2001-12-04 Canon Kabushiki Kaisha Process for producing semiconductor article
US6452091B1 (en) 1999-07-14 2002-09-17 Canon Kabushiki Kaisha Method of producing thin-film single-crystal device, solar cell module and method of producing the same
US6391220B1 (en) 1999-08-18 2002-05-21 Fujitsu Limited, Inc. Methods for fabricating flexible circuit structures
AU776667B2 (en) 1999-11-29 2004-09-16 Canon Kabushiki Kaisha Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device
US7060153B2 (en) 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
SG101479A1 (en) 2000-09-14 2004-01-30 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4803884B2 (ja) 2001-01-31 2011-10-26 キヤノン株式会社 薄膜半導体装置の製造方法
JP4302335B2 (ja) 2001-05-22 2009-07-22 株式会社半導体エネルギー研究所 太陽電池の作製方法
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
WO2003010825A1 (fr) 2001-07-24 2003-02-06 Seiko Epson Corporation Procede de transfert, procede de fabrication d'un element en couche mince, procede de fabrication d'un circuit integre, substrat de circuit et son procede de fabrication, dispositif electro-optique et son procede de fabrication et carte a circuit integre et materiel electronique
JP5057619B2 (ja) 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW554398B (en) 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
TW558743B (en) 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
TW594947B (en) * 2001-10-30 2004-06-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TWI264121B (en) 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
US6953735B2 (en) 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
EP1363319B1 (en) 2002-05-17 2009-01-07 Semiconductor Energy Laboratory Co., Ltd. Method of transferring an object and method of manufacturing a semiconductor device
JP2004047823A (ja) 2002-07-12 2004-02-12 Tokyo Seimitsu Co Ltd ダイシングテープ貼付装置およびバックグラインド・ダイシングテープ貼付システム
TWI272641B (en) 2002-07-16 2007-02-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP2004140267A (ja) 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4471563B2 (ja) 2002-10-25 2010-06-02 株式会社ルネサステクノロジ 半導体装置の製造方法
WO2004040648A1 (ja) 2002-10-30 2004-05-13 Semiconductor Energy Laboratory Co., Ltd. 半導体装置および半導体装置の作製方法
US7056810B2 (en) 2002-12-18 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
JP4373085B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
CN1739129A (zh) * 2003-01-15 2006-02-22 株式会社半导体能源研究所 剥离方法及采用该剥离方法的显示装置的制造方法
KR101033797B1 (ko) 2003-01-15 2011-05-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 그 박리 방법을 사용한 표시 장치의 제작 방법
US7436050B2 (en) 2003-01-22 2008-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a flexible printed circuit
JP4151421B2 (ja) 2003-01-23 2008-09-17 セイコーエプソン株式会社 デバイスの製造方法
TWI356658B (en) 2003-01-23 2012-01-11 Toray Industries Members for circuit board, method and device for m
JP2004311955A (ja) 2003-03-25 2004-11-04 Sony Corp 超薄型電気光学表示装置の製造方法
US7241666B2 (en) 2003-10-28 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7608520B2 (en) 2003-11-06 2009-10-27 Panasonic Corporation Method for bonding substrate, bonded substrate, and direct bonded substrate
KR101095293B1 (ko) 2003-11-28 2011-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 제조 방법
KR101207442B1 (ko) 2003-12-15 2012-12-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 집적회로장치의 제조방법, 비접촉형 박막 집적회로장치 및 그 제조 방법, 비접촉형 박막 집적회로 장치를 가지는 아이디 태그 및 동전
US7271076B2 (en) 2003-12-19 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
US7015075B2 (en) 2004-02-09 2006-03-21 Freescale Semiconuctor, Inc. Die encapsulation using a porous carrier
CN100521117C (zh) 2004-02-25 2009-07-29 株式会社半导体能源研究所 半导体器件及其制造方法
JP2006049800A (ja) 2004-03-10 2006-02-16 Seiko Epson Corp 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器
US7282380B2 (en) * 2004-03-25 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101187403B1 (ko) 2004-06-02 2012-10-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
WO2006003816A1 (ja) 2004-07-02 2006-01-12 Sharp Kabushiki Kaisha フィルム剥離方法と装置
US7591863B2 (en) 2004-07-16 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip
CN100530575C (zh) 2004-07-30 2009-08-19 株式会社半导体能源研究所 层压系统、ic薄片、ic薄片卷、以及ic芯片的制造方法
WO2006011664A1 (en) 2004-07-30 2006-02-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101223197B1 (ko) 2004-09-24 2013-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제조방법
EP1814369A4 (en) 2004-10-01 2008-10-29 Toray Industries LONG FILM PCB AND PRODUCTION PROCESS AND PRODUCTION DEVICE THEREFOR
US7482248B2 (en) 2004-12-03 2009-01-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP4649198B2 (ja) 2004-12-20 2011-03-09 新光電気工業株式会社 配線基板の製造方法
CN101111938B (zh) 2005-01-28 2010-08-11 株式会社半导体能源研究所 半导体器件和制造它的方法
US7566633B2 (en) 2005-02-25 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5025145B2 (ja) * 2005-03-01 2012-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI413152B (zh) 2005-03-01 2013-10-21 Semiconductor Energy Lab 半導體裝置製造方法
JP4795743B2 (ja) 2005-05-19 2011-10-19 リンテック株式会社 貼付装置
CN100585806C (zh) 2005-05-20 2010-01-27 株式会社半导体能源研究所 半导体装置的制造方法
US8030132B2 (en) 2005-05-31 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including peeling step
US7465674B2 (en) 2005-05-31 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7485511B2 (en) * 2005-06-01 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit device and method for manufacturing integrated circuit device
JP5210501B2 (ja) * 2005-06-01 2013-06-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2006344618A (ja) 2005-06-07 2006-12-21 Fujifilm Holdings Corp 機能性膜含有構造体、及び、機能性膜の製造方法
JP4916680B2 (ja) 2005-06-30 2012-04-18 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法
EP1760776B1 (en) 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
US7767543B2 (en) 2005-09-06 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a micro-electro-mechanical device with a folded substrate
TWI424499B (zh) 2006-06-30 2014-01-21 Semiconductor Energy Lab 製造半導體裝置的方法
JP4402144B2 (ja) * 2006-09-29 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8137417B2 (en) 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
US7867907B2 (en) 2006-10-17 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4380709B2 (ja) * 2007-01-31 2009-12-09 セイコーエプソン株式会社 半導体装置の製造方法
CN101504930B (zh) 2008-02-06 2013-10-16 株式会社半导体能源研究所 Soi衬底的制造方法
JP2010050313A (ja) * 2008-08-22 2010-03-04 Seiko Epson Corp 薄膜転写方法及び薄膜電子デバイスの製造方法
JP5586920B2 (ja) * 2008-11-20 2014-09-10 株式会社半導体エネルギー研究所 フレキシブル半導体装置の作製方法
JP2010286774A (ja) * 2009-06-15 2010-12-24 Seiko Epson Corp 液晶パネル、その製造方法、マイクロレンズ基板、液晶パネル用対向基板
JP2011165788A (ja) * 2010-02-08 2011-08-25 Seiko Epson Corp 半導体素子基板の製造方法
US8507322B2 (en) 2010-06-24 2013-08-13 Akihiro Chida Semiconductor substrate and method for manufacturing semiconductor device
JP5714859B2 (ja) * 2010-09-30 2015-05-07 芝浦メカトロニクス株式会社 基板積層体、貼り合わせ装置、剥離装置、および基板の製造方法
KR101953724B1 (ko) * 2011-08-26 2019-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 모듈, 발광 장치, 발광 모듈의 제작 방법, 발광 장치의 제작 방법
CN102496667B (zh) * 2011-12-20 2014-05-07 中国科学院半导体研究所 GaN基薄膜芯片的制造方法
JP6277357B2 (ja) * 2012-08-03 2018-02-14 株式会社Ｊｏｌｅｄ 接合体の製造方法
CN109273622B (zh) * 2013-08-06 2021-03-12 株式会社半导体能源研究所 剥离方法
TWI663722B (zh) 2013-09-06 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 發光裝置以及發光裝置的製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327836A (ja) * 2003-04-25 2004-11-18 Seiko Epson Corp 被転写体の転写方法、被転写体の製造方法、回路基板の製造方法、電気光学装置、及び電子機器
KR20080029887A (ko) * 2006-09-29 2008-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
JP2012150185A (ja) * 2011-01-17 2012-08-09 Ricoh Co Ltd 電気泳動表示素子の製造方法

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