CN108987342B - 等离子体蚀刻和等离子体切割的方法 - Google Patents

等离子体蚀刻和等离子体切割的方法 Download PDF

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Publication number
CN108987342B
CN108987342B CN201810568915.0A CN201810568915A CN108987342B CN 108987342 B CN108987342 B CN 108987342B CN 201810568915 A CN201810568915 A CN 201810568915A CN 108987342 B CN108987342 B CN 108987342B
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etch
etching
main
plasma
step during
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CN108987342A (zh
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奥立佛·J·安塞尔
马丁·哈尼辛克
珍妮特·霍普金斯
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SPTS Technologies Ltd
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SPTS Technologies Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Dicing (AREA)
CN201810568915.0A 2017-06-05 2018-06-05 等离子体蚀刻和等离子体切割的方法 Active CN108987342B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1708927.7 2017-06-05
GBGB1708927.7A GB201708927D0 (en) 2017-06-05 2017-06-05 Methods of plasma etching and plasma dicing

Publications (2)

Publication Number Publication Date
CN108987342A CN108987342A (zh) 2018-12-11
CN108987342B true CN108987342B (zh) 2023-07-18

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Country Link
US (1) US10872775B2 (https=)
EP (1) EP3413341B1 (https=)
JP (1) JP7042165B2 (https=)
KR (1) KR102364952B1 (https=)
CN (1) CN108987342B (https=)
GB (1) GB201708927D0 (https=)
TW (1) TWI791531B (https=)

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US10818551B2 (en) * 2019-01-09 2020-10-27 Semiconductor Components Industries, Llc Plasma die singulation systems and related methods
US20210118734A1 (en) * 2019-10-22 2021-04-22 Semiconductor Components Industries, Llc Plasma-singulated, contaminant-reduced semiconductor die
KR102824210B1 (ko) * 2019-10-28 2025-06-25 삼성전자주식회사 반도체 소자 및 제조방법
US11721586B2 (en) * 2019-12-19 2023-08-08 Nxp B.V. Method and system for regulating plasma dicing rates
US11658103B2 (en) * 2020-09-11 2023-05-23 Qualcomm Incorporated Capacitor interposer layer (CIL) chiplet design with conformal die edge pattern around bumps
TWI771893B (zh) * 2021-02-03 2022-07-21 國立陽明交通大學 陣列式晶片的切割方法
CN114724948B (zh) * 2022-03-30 2025-11-04 青岛惠科微电子有限公司 硅片的湿法蚀刻方法和装置
US20240071828A1 (en) * 2022-08-31 2024-02-29 Texas Instruments Incorporated Methods of separating semiconductor dies
US20240258112A1 (en) * 2023-01-30 2024-08-01 Texas Instruments Incorporated Multi-loop time varying bosch process for 2-dimensional small cd high aspect ratio deep silicon trench etching

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JP2017073439A (ja) * 2015-10-06 2017-04-13 株式会社ディスコ デバイスの製造方法

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EP0691678A2 (en) * 1994-07-08 1996-01-10 Applied Materials, Inc. Process for plasma etching of vias in a dielectric layer with removal of residues
EP0731501A1 (en) * 1995-03-08 1996-09-11 International Business Machines Corporation Method for plasma etching an oxide/polycide structure
JP2008217384A (ja) * 2007-03-05 2008-09-18 Hitachi Ltd 回路チップ及びその製造方法、並びにこれを搭載したｒｆｉｄ回路装置
KR20160029097A (ko) * 2013-07-02 2016-03-14 어플라이드 머티어리얼스, 인코포레이티드 높은 다이 파괴 강도 및 평활한 측벽을 위한 레이저 스크라이빙 및 플라즈마 에칭
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Publication number Publication date
GB201708927D0 (en) 2017-07-19
KR102364952B1 (ko) 2022-02-17
KR20180133231A (ko) 2018-12-13
CN108987342A (zh) 2018-12-11
US20180350615A1 (en) 2018-12-06
EP3413341A1 (en) 2018-12-12
EP3413341B1 (en) 2022-04-27
TW201903889A (zh) 2019-01-16
JP7042165B2 (ja) 2022-03-25
TWI791531B (zh) 2023-02-11
US10872775B2 (en) 2020-12-22
JP2018207109A (ja) 2018-12-27

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