KR102364952B1 - 플라즈마 에칭 및 플라즈마 다이싱 방법 - Google Patents

플라즈마 에칭 및 플라즈마 다이싱 방법 Download PDF

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KR102364952B1
KR102364952B1 KR1020180064448A KR20180064448A KR102364952B1 KR 102364952 B1 KR102364952 B1 KR 102364952B1 KR 1020180064448 A KR1020180064448 A KR 1020180064448A KR 20180064448 A KR20180064448 A KR 20180064448A KR 102364952 B1 KR102364952 B1 KR 102364952B1
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etch
etching
plasma
main
dicing
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KR20180133231A (ko
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제이 안셀 올리버
하니시넥 마틴
홉킨스 자넷
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에스피티에스 테크놀러지스 리미티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H01L21/02274—
    • H01L21/31116—
    • H01L21/32136—
    • H01L21/78—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Dicing (AREA)
KR1020180064448A 2017-06-05 2018-06-04 플라즈마 에칭 및 플라즈마 다이싱 방법 Active KR102364952B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1708927.7 2017-06-05
GBGB1708927.7A GB201708927D0 (en) 2017-06-05 2017-06-05 Methods of plasma etching and plasma dicing

Publications (2)

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KR20180133231A KR20180133231A (ko) 2018-12-13
KR102364952B1 true KR102364952B1 (ko) 2022-02-17

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US (1) US10872775B2 (https=)
EP (1) EP3413341B1 (https=)
JP (1) JP7042165B2 (https=)
KR (1) KR102364952B1 (https=)
CN (1) CN108987342B (https=)
GB (1) GB201708927D0 (https=)
TW (1) TWI791531B (https=)

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US10818551B2 (en) * 2019-01-09 2020-10-27 Semiconductor Components Industries, Llc Plasma die singulation systems and related methods
US20210118734A1 (en) * 2019-10-22 2021-04-22 Semiconductor Components Industries, Llc Plasma-singulated, contaminant-reduced semiconductor die
KR102824210B1 (ko) * 2019-10-28 2025-06-25 삼성전자주식회사 반도체 소자 및 제조방법
US11721586B2 (en) * 2019-12-19 2023-08-08 Nxp B.V. Method and system for regulating plasma dicing rates
US11658103B2 (en) * 2020-09-11 2023-05-23 Qualcomm Incorporated Capacitor interposer layer (CIL) chiplet design with conformal die edge pattern around bumps
TWI771893B (zh) * 2021-02-03 2022-07-21 國立陽明交通大學 陣列式晶片的切割方法
CN114724948B (zh) * 2022-03-30 2025-11-04 青岛惠科微电子有限公司 硅片的湿法蚀刻方法和装置
US20240071828A1 (en) * 2022-08-31 2024-02-29 Texas Instruments Incorporated Methods of separating semiconductor dies
US20240258112A1 (en) * 2023-01-30 2024-08-01 Texas Instruments Incorporated Multi-loop time varying bosch process for 2-dimensional small cd high aspect ratio deep silicon trench etching

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CN108987342B (zh) 2023-07-18
GB201708927D0 (en) 2017-07-19
KR20180133231A (ko) 2018-12-13
CN108987342A (zh) 2018-12-11
US20180350615A1 (en) 2018-12-06
EP3413341A1 (en) 2018-12-12
EP3413341B1 (en) 2022-04-27
TW201903889A (zh) 2019-01-16
JP7042165B2 (ja) 2022-03-25
TWI791531B (zh) 2023-02-11
US10872775B2 (en) 2020-12-22
JP2018207109A (ja) 2018-12-27

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