GB201708927D0 - Methods of plasma etching and plasma dicing - Google Patents

Methods of plasma etching and plasma dicing

Info

Publication number
GB201708927D0
GB201708927D0 GBGB1708927.7A GB201708927A GB201708927D0 GB 201708927 D0 GB201708927 D0 GB 201708927D0 GB 201708927 A GB201708927 A GB 201708927A GB 201708927 D0 GB201708927 D0 GB 201708927D0
Authority
GB
United Kingdom
Prior art keywords
plasma
methods
dicing
etching
plasma etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1708927.7A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPTS Technologies Ltd
Original Assignee
SPTS Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPTS Technologies Ltd filed Critical SPTS Technologies Ltd
Priority to GBGB1708927.7A priority Critical patent/GB201708927D0/en
Publication of GB201708927D0 publication Critical patent/GB201708927D0/en
Priority to US15/995,184 priority patent/US10872775B2/en
Priority to TW107119191A priority patent/TWI791531B/zh
Priority to KR1020180064448A priority patent/KR102364952B1/ko
Priority to JP2018107506A priority patent/JP7042165B2/ja
Priority to CN201810568915.0A priority patent/CN108987342B/zh
Priority to EP18176104.0A priority patent/EP3413341B1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
GBGB1708927.7A 2017-06-05 2017-06-05 Methods of plasma etching and plasma dicing Ceased GB201708927D0 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GBGB1708927.7A GB201708927D0 (en) 2017-06-05 2017-06-05 Methods of plasma etching and plasma dicing
US15/995,184 US10872775B2 (en) 2017-06-05 2018-06-01 Methods of plasma etching and plasma dicing
TW107119191A TWI791531B (zh) 2017-06-05 2018-06-04 電漿蝕刻及電漿切割方法
KR1020180064448A KR102364952B1 (ko) 2017-06-05 2018-06-04 플라즈마 에칭 및 플라즈마 다이싱 방법
JP2018107506A JP7042165B2 (ja) 2017-06-05 2018-06-05 プラズマエッチング方法及びプラズマダイシング方法
CN201810568915.0A CN108987342B (zh) 2017-06-05 2018-06-05 等离子体蚀刻和等离子体切割的方法
EP18176104.0A EP3413341B1 (en) 2017-06-05 2018-06-05 Method of plasma etching and plasma dicing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1708927.7A GB201708927D0 (en) 2017-06-05 2017-06-05 Methods of plasma etching and plasma dicing

Publications (1)

Publication Number Publication Date
GB201708927D0 true GB201708927D0 (en) 2017-07-19

Family

ID=59350031

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1708927.7A Ceased GB201708927D0 (en) 2017-06-05 2017-06-05 Methods of plasma etching and plasma dicing

Country Status (7)

Country Link
US (1) US10872775B2 (https=)
EP (1) EP3413341B1 (https=)
JP (1) JP7042165B2 (https=)
KR (1) KR102364952B1 (https=)
CN (1) CN108987342B (https=)
GB (1) GB201708927D0 (https=)
TW (1) TWI791531B (https=)

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US10818551B2 (en) * 2019-01-09 2020-10-27 Semiconductor Components Industries, Llc Plasma die singulation systems and related methods
US20210118734A1 (en) * 2019-10-22 2021-04-22 Semiconductor Components Industries, Llc Plasma-singulated, contaminant-reduced semiconductor die
KR102824210B1 (ko) * 2019-10-28 2025-06-25 삼성전자주식회사 반도체 소자 및 제조방법
US11721586B2 (en) * 2019-12-19 2023-08-08 Nxp B.V. Method and system for regulating plasma dicing rates
US11658103B2 (en) * 2020-09-11 2023-05-23 Qualcomm Incorporated Capacitor interposer layer (CIL) chiplet design with conformal die edge pattern around bumps
TWI771893B (zh) * 2021-02-03 2022-07-21 國立陽明交通大學 陣列式晶片的切割方法
CN114724948B (zh) * 2022-03-30 2025-11-04 青岛惠科微电子有限公司 硅片的湿法蚀刻方法和装置
US20240071828A1 (en) * 2022-08-31 2024-02-29 Texas Instruments Incorporated Methods of separating semiconductor dies
US20240258112A1 (en) * 2023-01-30 2024-08-01 Texas Instruments Incorporated Multi-loop time varying bosch process for 2-dimensional small cd high aspect ratio deep silicon trench etching

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US5514247A (en) * 1994-07-08 1996-05-07 Applied Materials, Inc. Process for plasma etching of vias
EP0731501A1 (en) * 1995-03-08 1996-09-11 International Business Machines Corporation Method for plasma etching an oxide/polycide structure
US6846746B2 (en) 2002-05-01 2005-01-25 Applied Materials, Inc. Method of smoothing a trench sidewall after a deep trench silicon etch process
JP4812512B2 (ja) 2006-05-19 2011-11-09 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
DE102007009913B4 (de) * 2007-02-28 2012-10-18 Advanced Micro Devices, Inc. Plasmaätzprozess mit hoher Ausbeute für Zwischenschichtdielektrika
JP2008217384A (ja) * 2007-03-05 2008-09-18 Hitachi Ltd 回路チップ及びその製造方法、並びにこれを搭載したｒｆｉｄ回路装置
CN101925983A (zh) * 2007-12-21 2010-12-22 苏威氟有限公司 用于生产微机电系统的方法
JP2010259160A (ja) 2009-04-22 2010-11-11 Sumitomo Precision Prod Co Ltd 発電装置およびシリコン片の製造方法
JP5676941B2 (ja) 2010-07-06 2015-02-25 キヤノン株式会社 配線基板の製造方法及び配線基板
US8871105B2 (en) * 2011-05-12 2014-10-28 Lam Research Corporation Method for achieving smooth side walls after Bosch etch process
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Also Published As

Publication number Publication date
CN108987342B (zh) 2023-07-18
KR102364952B1 (ko) 2022-02-17
KR20180133231A (ko) 2018-12-13
CN108987342A (zh) 2018-12-11
US20180350615A1 (en) 2018-12-06
EP3413341A1 (en) 2018-12-12
EP3413341B1 (en) 2022-04-27
TW201903889A (zh) 2019-01-16
JP7042165B2 (ja) 2022-03-25
TWI791531B (zh) 2023-02-11
US10872775B2 (en) 2020-12-22
JP2018207109A (ja) 2018-12-27

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)