SG11201913310RA - Etching method and etching device - Google Patents

Etching method and etching device

Info

Publication number
SG11201913310RA
SG11201913310RA SG11201913310RA SG11201913310RA SG11201913310RA SG 11201913310R A SG11201913310R A SG 11201913310RA SG 11201913310R A SG11201913310R A SG 11201913310RA SG 11201913310R A SG11201913310R A SG 11201913310RA SG 11201913310R A SG11201913310R A SG 11201913310RA
Authority
SG
Singapore
Prior art keywords
etching
etching method
etching device
Prior art date
Application number
SG11201913310RA
Inventor
Akitaka Shimizu
Shuichiro Uda
Takeshi Saito
Taiki Kato
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG11201913310RA publication Critical patent/SG11201913310RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity
SG11201913310RA 2017-06-30 2018-05-11 Etching method and etching device SG11201913310RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017128222A JP6929148B2 (en) 2017-06-30 2017-06-30 Etching method and etching equipment
PCT/JP2018/018364 WO2019003663A1 (en) 2017-06-30 2018-05-11 Etching method and etching device

Publications (1)

Publication Number Publication Date
SG11201913310RA true SG11201913310RA (en) 2020-01-30

Family

ID=64741426

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201913310RA SG11201913310RA (en) 2017-06-30 2018-05-11 Etching method and etching device

Country Status (7)

Country Link
US (1) US11443952B2 (en)
JP (1) JP6929148B2 (en)
KR (1) KR102576634B1 (en)
CN (1) CN110809817B (en)
SG (1) SG11201913310RA (en)
TW (1) TWI791540B (en)
WO (1) WO2019003663A1 (en)

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JP7120098B2 (en) * 2019-03-19 2022-08-17 新東工業株式会社 Equipment for producing tetrahydroborate and method for producing tetrahydroborate
JP7221115B2 (en) * 2019-04-03 2023-02-13 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
US11651969B2 (en) * 2019-07-18 2023-05-16 Kioxia Corporation Etching method, semiconductor manufacturing apparatus, and method of manufacturing semiconductor device
JP7413093B2 (en) * 2019-07-18 2024-01-15 キオクシア株式会社 Etching method, semiconductor manufacturing equipment, and semiconductor device manufacturing method
WO2021054147A1 (en) * 2019-09-17 2021-03-25 東京エレクトロン株式会社 Plasma treatment apparatus
JP7394694B2 (en) * 2019-09-17 2023-12-08 東京エレクトロン株式会社 plasma processing equipment
JP7030858B2 (en) * 2020-01-06 2022-03-07 株式会社Kokusai Electric Semiconductor device manufacturing methods, substrate processing devices and programs
JP7323476B2 (en) * 2020-02-19 2023-08-08 住友電気工業株式会社 Semiconductor device manufacturing method
JP2021153141A (en) * 2020-03-24 2021-09-30 東京エレクトロン株式会社 Method for processing substrate and substrate processing device
CN111900075A (en) * 2020-06-22 2020-11-06 中国科学院微电子研究所 Silicon nitride film, deposition method thereof and semiconductor device
JP7174016B2 (en) 2020-07-16 2022-11-17 株式会社Kokusai Electric Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and program
JP7450512B2 (en) * 2020-10-07 2024-03-15 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
KR20220097202A (en) * 2020-12-31 2022-07-07 세메스 주식회사 Substrate processing method and substrate processing apparatus
CN115298803A (en) * 2021-02-19 2022-11-04 株式会社日立高新技术 Etching method and etching apparatus
CN117157734A (en) * 2022-03-29 2023-12-01 株式会社国际电气 Substrate processing method, semiconductor device manufacturing method, program, and substrate processing apparatus

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07335612A (en) 1994-06-13 1995-12-22 Hitachi Ltd Manufacture of semiconductor integrated circuit device
JP4071069B2 (en) * 2002-08-28 2008-04-02 東京エレクトロン株式会社 Insulating film etching method
JP4877747B2 (en) * 2006-03-23 2012-02-15 東京エレクトロン株式会社 Plasma etching method
JP4833878B2 (en) 2007-01-31 2011-12-07 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
US8119545B2 (en) * 2008-03-31 2012-02-21 Tokyo Electron Limited Forming a silicon nitride film by plasma CVD
US8999856B2 (en) * 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US20130045605A1 (en) * 2011-08-18 2013-02-21 Applied Materials, Inc. Dry-etch for silicon-and-nitrogen-containing films
US8679982B2 (en) * 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
KR102107256B1 (en) * 2012-05-23 2020-05-06 도쿄엘렉트론가부시키가이샤 Substrate processing apparatus and substrate processing method
JP2014049466A (en) * 2012-08-29 2014-03-17 Tokyo Electron Ltd Etching processing method and substrate processing apparatus
JP2015073035A (en) 2013-10-03 2015-04-16 東京エレクトロン株式会社 Etching method
JP6239339B2 (en) 2013-10-17 2017-11-29 東京エレクトロン株式会社 Etching apparatus, etching method, and substrate mounting mechanism
US20150371865A1 (en) * 2014-06-19 2015-12-24 Applied Materials, Inc. High selectivity gas phase silicon nitride removal
JP2016058590A (en) * 2014-09-11 2016-04-21 株式会社日立ハイテクノロジーズ Plasma processing method
JP6426489B2 (en) * 2015-02-03 2018-11-21 東京エレクトロン株式会社 Etching method

Also Published As

Publication number Publication date
US11443952B2 (en) 2022-09-13
US20210151326A1 (en) 2021-05-20
JP6929148B2 (en) 2021-09-01
JP2019012759A (en) 2019-01-24
TW201921482A (en) 2019-06-01
TWI791540B (en) 2023-02-11
KR20200019983A (en) 2020-02-25
WO2019003663A1 (en) 2019-01-03
CN110809817B (en) 2024-03-15
CN110809817A (en) 2020-02-18
KR102576634B1 (en) 2023-09-11

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