TWI791531B - 電漿蝕刻及電漿切割方法 - Google Patents

電漿蝕刻及電漿切割方法 Download PDF

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Publication number
TWI791531B
TWI791531B TW107119191A TW107119191A TWI791531B TW I791531 B TWI791531 B TW I791531B TW 107119191 A TW107119191 A TW 107119191A TW 107119191 A TW107119191 A TW 107119191A TW I791531 B TWI791531 B TW I791531B
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Taiwan
Prior art keywords
etch
etching
plasma
main
silicon
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TW107119191A
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English (en)
Chinese (zh)
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TW201903889A (zh
Inventor
奧利薇 J 安塞爾
馬汀 哈尼西尼克
珍娜 霍普金斯
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英商Ｓｐｔｓ科技公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Dicing (AREA)
TW107119191A 2017-06-05 2018-06-04 電漿蝕刻及電漿切割方法 TWI791531B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
??1708927.7 2017-06-05
GB1708927.7 2017-06-05
GBGB1708927.7A GB201708927D0 (en) 2017-06-05 2017-06-05 Methods of plasma etching and plasma dicing

Publications (2)

Publication Number Publication Date
TW201903889A TW201903889A (zh) 2019-01-16
TWI791531B true TWI791531B (zh) 2023-02-11

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TW107119191A TWI791531B (zh) 2017-06-05 2018-06-04 電漿蝕刻及電漿切割方法

Country Status (7)

Country Link
US (1) US10872775B2 (https=)
EP (1) EP3413341B1 (https=)
JP (1) JP7042165B2 (https=)
KR (1) KR102364952B1 (https=)
CN (1) CN108987342B (https=)
GB (1) GB201708927D0 (https=)
TW (1) TWI791531B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10818551B2 (en) * 2019-01-09 2020-10-27 Semiconductor Components Industries, Llc Plasma die singulation systems and related methods
US20210118734A1 (en) * 2019-10-22 2021-04-22 Semiconductor Components Industries, Llc Plasma-singulated, contaminant-reduced semiconductor die
KR102824210B1 (ko) * 2019-10-28 2025-06-25 삼성전자주식회사 반도체 소자 및 제조방법
US11721586B2 (en) * 2019-12-19 2023-08-08 Nxp B.V. Method and system for regulating plasma dicing rates
US11658103B2 (en) * 2020-09-11 2023-05-23 Qualcomm Incorporated Capacitor interposer layer (CIL) chiplet design with conformal die edge pattern around bumps
TWI771893B (zh) * 2021-02-03 2022-07-21 國立陽明交通大學 陣列式晶片的切割方法
CN114724948B (zh) * 2022-03-30 2025-11-04 青岛惠科微电子有限公司 硅片的湿法蚀刻方法和装置
US20240071828A1 (en) * 2022-08-31 2024-02-29 Texas Instruments Incorporated Methods of separating semiconductor dies
US20240258112A1 (en) * 2023-01-30 2024-08-01 Texas Instruments Incorporated Multi-loop time varying bosch process for 2-dimensional small cd high aspect ratio deep silicon trench etching

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201310525A (zh) * 2011-05-12 2013-03-01 蘭姆研究公司 在布氏蝕刻製程後獲得平滑之側壁之方法
TW201405646A (zh) * 2012-07-13 2014-02-01 應用材料股份有限公司 用於高晶粒破裂強度與清潔側壁的雷射劃線及電漿蝕刻
US20140051232A1 (en) * 2012-08-20 2014-02-20 William F. Burghout Semiconductor die singulation method
TW201528352A (zh) * 2013-12-06 2015-07-16 應用材料股份有限公司 用於雷射劃線與電漿蝕刻晶圓切割製程的網狀印刷遮罩
EP3012857A1 (en) * 2014-10-21 2016-04-27 ams AG Method of producing an opening with smooth vertical sidewall in a semiconductor substrate
TW201637094A (zh) * 2013-03-06 2016-10-16 帕斯馬舍門有限責任公司 用於電漿切割半導體晶圓之方法和設備

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5620525A (en) * 1990-07-16 1997-04-15 Novellus Systems, Inc. Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
US5514247A (en) * 1994-07-08 1996-05-07 Applied Materials, Inc. Process for plasma etching of vias
EP0731501A1 (en) * 1995-03-08 1996-09-11 International Business Machines Corporation Method for plasma etching an oxide/polycide structure
US6846746B2 (en) 2002-05-01 2005-01-25 Applied Materials, Inc. Method of smoothing a trench sidewall after a deep trench silicon etch process
JP4812512B2 (ja) 2006-05-19 2011-11-09 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
DE102007009913B4 (de) * 2007-02-28 2012-10-18 Advanced Micro Devices, Inc. Plasmaätzprozess mit hoher Ausbeute für Zwischenschichtdielektrika
JP2008217384A (ja) * 2007-03-05 2008-09-18 Hitachi Ltd 回路チップ及びその製造方法、並びにこれを搭載したｒｆｉｄ回路装置
CN101925983A (zh) * 2007-12-21 2010-12-22 苏威氟有限公司 用于生产微机电系统的方法
JP2010259160A (ja) 2009-04-22 2010-11-11 Sumitomo Precision Prod Co Ltd 発電装置およびシリコン片の製造方法
JP5676941B2 (ja) 2010-07-06 2015-02-25 キヤノン株式会社 配線基板の製造方法及び配線基板
US8450188B1 (en) 2011-08-02 2013-05-28 Micro Processing Technology, Inc. Method of removing back metal from an etched semiconductor scribe street
JP5957926B2 (ja) 2012-02-09 2016-07-27 セイコーエプソン株式会社 半導体装置の製造方法
GB2499816A (en) 2012-02-29 2013-09-04 Oxford Instr Nanotechnology Tools Ltd Controlling deposition and etching in a chamber with fine time control of parameters and gas flow
US9034733B2 (en) 2012-08-20 2015-05-19 Semiconductor Components Industries, Llc Semiconductor die singulation method
US9368404B2 (en) 2012-09-28 2016-06-14 Plasma-Therm Llc Method for dicing a substrate with back metal
US9153493B1 (en) 2013-01-16 2015-10-06 Micro Processing Technology, Inc. System for separating devices from a semiconductor wafer
US8980726B2 (en) 2013-01-25 2015-03-17 Applied Materials, Inc. Substrate dicing by laser ablation and plasma etch damage removal for ultra-thin wafers
US20150011073A1 (en) * 2013-07-02 2015-01-08 Wei-Sheng Lei Laser scribing and plasma etch for high die break strength and smooth sidewall
US9224615B2 (en) * 2013-09-11 2015-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Noble gas bombardment to reduce scallops in bosch etching
US8906745B1 (en) 2013-09-12 2014-12-09 Micro Processing Technology, Inc. Method using fluid pressure to remove back metal from semiconductor wafer scribe streets
US9460966B2 (en) * 2013-10-10 2016-10-04 Applied Materials, Inc. Method and apparatus for dicing wafers having thick passivation polymer layer
CN104576506A (zh) 2013-10-22 2015-04-29 中微半导体设备(上海)有限公司 一种刻蚀硅通孔的方法
CN103646917B (zh) * 2013-11-28 2016-04-13 中微半导体设备(上海)有限公司 硅通孔形成方法
JP6250429B2 (ja) 2014-02-13 2017-12-20 エスアイアイ・セミコンダクタ株式会社 半導体装置およびその製造方法
US9275902B2 (en) * 2014-03-26 2016-03-01 Applied Materials, Inc. Dicing processes for thin wafers with bumps on wafer backside
JP2016018838A (ja) 2014-07-07 2016-02-01 株式会社リコー シリコン基板の加工方法
JP6566812B2 (ja) * 2015-09-25 2019-08-28 三菱電機株式会社 炭化珪素半導体装置及びその製造方法
JP6564670B2 (ja) * 2015-10-06 2019-08-21 株式会社ディスコ デバイスの製造方法
JP6476419B2 (ja) * 2016-02-04 2019-03-06 パナソニックＩｐマネジメント株式会社 素子チップの製造方法および素子チップ
JP6476418B2 (ja) * 2016-02-04 2019-03-06 パナソニックＩｐマネジメント株式会社 素子チップの製造方法および電子部品実装構造体の製造方法
JP6575874B2 (ja) * 2016-03-09 2019-09-18 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
JP6604476B2 (ja) * 2016-03-11 2019-11-13 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
JP2018056502A (ja) * 2016-09-30 2018-04-05 株式会社ディスコ デバイスウエーハの加工方法
JP6524562B2 (ja) * 2017-02-23 2019-06-05 パナソニックＩｐマネジメント株式会社 素子チップおよびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201310525A (zh) * 2011-05-12 2013-03-01 蘭姆研究公司 在布氏蝕刻製程後獲得平滑之側壁之方法
TW201405646A (zh) * 2012-07-13 2014-02-01 應用材料股份有限公司 用於高晶粒破裂強度與清潔側壁的雷射劃線及電漿蝕刻
US20140051232A1 (en) * 2012-08-20 2014-02-20 William F. Burghout Semiconductor die singulation method
TW201637094A (zh) * 2013-03-06 2016-10-16 帕斯馬舍門有限責任公司 用於電漿切割半導體晶圓之方法和設備
TW201528352A (zh) * 2013-12-06 2015-07-16 應用材料股份有限公司 用於雷射劃線與電漿蝕刻晶圓切割製程的網狀印刷遮罩
EP3012857A1 (en) * 2014-10-21 2016-04-27 ams AG Method of producing an opening with smooth vertical sidewall in a semiconductor substrate

Also Published As

Publication number Publication date
CN108987342B (zh) 2023-07-18
GB201708927D0 (en) 2017-07-19
KR102364952B1 (ko) 2022-02-17
KR20180133231A (ko) 2018-12-13
CN108987342A (zh) 2018-12-11
US20180350615A1 (en) 2018-12-06
EP3413341A1 (en) 2018-12-12
EP3413341B1 (en) 2022-04-27
TW201903889A (zh) 2019-01-16
JP7042165B2 (ja) 2022-03-25
US10872775B2 (en) 2020-12-22
JP2018207109A (ja) 2018-12-27

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