CN1088542C - 减少了延迟变动的场效应晶体管 - Google Patents
减少了延迟变动的场效应晶体管 Download PDFInfo
- Publication number
- CN1088542C CN1088542C CN97102274A CN97102274A CN1088542C CN 1088542 C CN1088542 C CN 1088542C CN 97102274 A CN97102274 A CN 97102274A CN 97102274 A CN97102274 A CN 97102274A CN 1088542 C CN1088542 C CN 1088542C
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- field
- effect transistor
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Links
- 230000005669 field effect Effects 0.000 title claims abstract description 90
- 230000008859 change Effects 0.000 title description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 72
- 150000001875 compounds Chemical class 0.000 claims abstract description 69
- 239000012535 impurity Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 15
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- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000003466 welding Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 6
- 230000033228 biological regulation Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 28
- 238000005516 engineering process Methods 0.000 description 18
- 230000014509 gene expression Effects 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 239000002800 charge carrier Substances 0.000 description 9
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- 238000000137 annealing Methods 0.000 description 6
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- 230000005684 electric field Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
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- 239000013078 crystal Substances 0.000 description 2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14184896 | 1996-06-04 | ||
JP141848/96 | 1996-06-04 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN01117216A Division CN1389929A (zh) | 1996-06-04 | 2001-04-25 | 减少了延迟变动的场效应晶体管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1167341A CN1167341A (zh) | 1997-12-10 |
CN1088542C true CN1088542C (zh) | 2002-07-31 |
Family
ID=15301576
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN97102274A Expired - Lifetime CN1088542C (zh) | 1996-06-04 | 1997-01-17 | 减少了延迟变动的场效应晶体管 |
CN01117216A Pending CN1389929A (zh) | 1996-06-04 | 2001-04-25 | 减少了延迟变动的场效应晶体管 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN01117216A Pending CN1389929A (zh) | 1996-06-04 | 2001-04-25 | 减少了延迟变动的场效应晶体管 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5942773A (zh) |
EP (1) | EP0812020B1 (zh) |
KR (1) | KR100271344B1 (zh) |
CN (2) | CN1088542C (zh) |
DE (1) | DE69629456T2 (zh) |
TW (1) | TW328609B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5856217A (en) * | 1997-04-10 | 1999-01-05 | Hughes Electronics Corporation | Modulation-doped field-effect transistors and fabrication processes |
JPH11354541A (ja) | 1998-06-11 | 1999-12-24 | Fujitsu Quantum Devices Kk | 半導体装置およびその製造方法 |
US6458640B1 (en) | 2001-06-04 | 2002-10-01 | Anadigics, Inc. | GaAs MESFET having LDD and non-uniform P-well doping profiles |
CN100416839C (zh) * | 2003-10-13 | 2008-09-03 | 联华电子股份有限公司 | 局部耗尽soi金属氧化物半导体元件 |
TWI424408B (zh) * | 2005-08-12 | 2014-01-21 | Semiconductor Energy Lab | 半導體裝置,和安裝有該半導體裝置的顯示裝置和電子裝置 |
US20130299895A1 (en) | 2012-05-09 | 2013-11-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Iii-v compound semiconductor device having dopant layer and method of making the same |
JP6812764B2 (ja) * | 2016-11-29 | 2021-01-13 | 日亜化学工業株式会社 | 電界効果トランジスタ |
CN108258033B (zh) * | 2016-12-29 | 2020-12-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03104239A (ja) * | 1989-09-19 | 1991-05-01 | Fujitsu Ltd | 半導体装置 |
JPH084989A (ja) * | 1994-06-22 | 1996-01-12 | Fuji Oozx Inc | 潤滑油の注油装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5856471A (ja) * | 1981-09-30 | 1983-04-04 | Fujitsu Ltd | 化合物半導体装置 |
JPS58123753A (ja) * | 1982-01-20 | 1983-07-23 | Hitachi Ltd | 半導体集積回路 |
JPH0427153A (ja) * | 1990-05-23 | 1992-01-30 | Fujitsu Ltd | 半導体集積回路装置 |
JP3075831B2 (ja) * | 1991-08-20 | 2000-08-14 | 三洋電機株式会社 | 電界効果型トランジスタ及びその製造方法 |
JPH0714989A (ja) * | 1993-06-15 | 1995-01-17 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
-
1996
- 1996-12-23 US US08/779,958 patent/US5942773A/en not_active Expired - Lifetime
- 1996-12-30 EP EP96309556A patent/EP0812020B1/en not_active Expired - Lifetime
- 1996-12-30 DE DE69629456T patent/DE69629456T2/de not_active Expired - Lifetime
- 1996-12-31 TW TW085116362A patent/TW328609B/zh not_active IP Right Cessation
-
1997
- 1997-01-17 CN CN97102274A patent/CN1088542C/zh not_active Expired - Lifetime
- 1997-01-17 KR KR1019970001250A patent/KR100271344B1/ko not_active IP Right Cessation
-
2001
- 2001-04-25 CN CN01117216A patent/CN1389929A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03104239A (ja) * | 1989-09-19 | 1991-05-01 | Fujitsu Ltd | 半導体装置 |
JPH084989A (ja) * | 1994-06-22 | 1996-01-12 | Fuji Oozx Inc | 潤滑油の注油装置 |
Non-Patent Citations (1)
Title |
---|
IEEE JOURNAL OF SOLID-STARE CIRCUITS VOL 25 NO 6 1990.12.1 CANFIELD P C RT AL AL-WELL GAAS MISFET TECHNOLOGY OFR MIXED-MODE APPLICATION * |
Also Published As
Publication number | Publication date |
---|---|
DE69629456T2 (de) | 2004-04-08 |
KR980005865A (ko) | 1998-03-30 |
EP0812020A2 (en) | 1997-12-10 |
EP0812020B1 (en) | 2003-08-13 |
DE69629456D1 (de) | 2003-09-18 |
EP0812020A3 (en) | 1998-03-18 |
KR100271344B1 (ko) | 2000-12-01 |
TW328609B (en) | 1998-03-21 |
US5942773A (en) | 1999-08-24 |
CN1389929A (zh) | 2003-01-08 |
CN1167341A (zh) | 1997-12-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
CI01 | Publication of corrected invention patent application |
Correction item: Denomination of Invention Correct: Field effect transistors with reduced delay variation False: Field effect transistors with reduced sub delay variations Number: 50 Page: 73 Volume: 13 |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090116 Address after: Tokyo, Japan Patentee after: Fujitsu Microelectronics Ltd. Address before: Kanagawa, Japan Patentee before: Fujitsu Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20090116 |
|
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU LTD |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa Patentee before: Fujitsu Microelectronics Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Kanagawa Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
CX01 | Expiry of patent term |
Granted publication date: 20020731 |
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EXPY | Termination of patent right or utility model |