TW328609B - Field effect transistor with reduced delay variation - Google Patents

Field effect transistor with reduced delay variation

Info

Publication number
TW328609B
TW328609B TW085116362A TW85116362A TW328609B TW 328609 B TW328609 B TW 328609B TW 085116362 A TW085116362 A TW 085116362A TW 85116362 A TW85116362 A TW 85116362A TW 328609 B TW328609 B TW 328609B
Authority
TW
Taiwan
Prior art keywords
region
source
field effect
effect transistor
conduction type
Prior art date
Application number
TW085116362A
Other languages
English (en)
Inventor
Yoshiaki Kaneko
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of TW328609B publication Critical patent/TW328609B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L29/1075—
    • H01L29/42316—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
TW085116362A 1996-06-04 1996-12-31 Field effect transistor with reduced delay variation TW328609B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14184896 1996-06-04

Publications (1)

Publication Number Publication Date
TW328609B true TW328609B (en) 1998-03-21

Family

ID=15301576

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085116362A TW328609B (en) 1996-06-04 1996-12-31 Field effect transistor with reduced delay variation

Country Status (6)

Country Link
US (1) US5942773A (zh)
EP (1) EP0812020B1 (zh)
KR (1) KR100271344B1 (zh)
CN (2) CN1088542C (zh)
DE (1) DE69629456T2 (zh)
TW (1) TW328609B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5856217A (en) * 1997-04-10 1999-01-05 Hughes Electronics Corporation Modulation-doped field-effect transistors and fabrication processes
JPH11354541A (ja) 1998-06-11 1999-12-24 Fujitsu Quantum Devices Kk 半導体装置およびその製造方法
US6458640B1 (en) 2001-06-04 2002-10-01 Anadigics, Inc. GaAs MESFET having LDD and non-uniform P-well doping profiles
CN100416839C (zh) * 2003-10-13 2008-09-03 联华电子股份有限公司 局部耗尽soi金属氧化物半导体元件
TWI424408B (zh) * 2005-08-12 2014-01-21 Semiconductor Energy Lab 半導體裝置，和安裝有該半導體裝置的顯示裝置和電子裝置
US20130299895A1 (en) 2012-05-09 2013-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. Iii-v compound semiconductor device having dopant layer and method of making the same
JP6812764B2 (ja) * 2016-11-29 2021-01-13 日亜化学工業株式会社 電界効果トランジスタ
CN108258033B (zh) * 2016-12-29 2020-12-22 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856471A (ja) * 1981-09-30 1983-04-04 Fujitsu Ltd 化合物半導体装置
JPS58123753A (ja) * 1982-01-20 1983-07-23 Hitachi Ltd 半導体集積回路
JPH03104239A (ja) * 1989-09-19 1991-05-01 Fujitsu Ltd 半導体装置
JPH0427153A (ja) * 1990-05-23 1992-01-30 Fujitsu Ltd 半導体集積回路装置
JP3075831B2 (ja) * 1991-08-20 2000-08-14 三洋電機株式会社 電界効果型トランジスタ及びその製造方法
JPH0714989A (ja) * 1993-06-15 1995-01-17 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH084989A (ja) * 1994-06-22 1996-01-12 Fuji Oozx Inc 潤滑油の注油装置

Also Published As

Publication number Publication date
DE69629456D1 (de) 2003-09-18
KR100271344B1 (ko) 2000-12-01
CN1088542C (zh) 2002-07-31
CN1389929A (zh) 2003-01-08
EP0812020B1 (en) 2003-08-13
EP0812020A2 (en) 1997-12-10
EP0812020A3 (en) 1998-03-18
KR980005865A (ko) 1998-03-30
DE69629456T2 (de) 2004-04-08
CN1167341A (zh) 1997-12-10
US5942773A (en) 1999-08-24

Similar Documents

Publication Publication Date Title
TW344141B (en) An insulated gate field effect transistor having a crystalline channel region
EP0335750A3 (en) Vertical power mosfet having high withstand voltage and high switching speed
ATE515802T1 (de) Lateraler leistungs-mosfet
DE69332358D1 (de) Leistung-mosfet aus siliziumkarbid
TW335513B (en) Semiconductor component for high voltage
TW328154B (en) Field effect transistor and CMOS element
MY135374A (en) Semiconductor storage
CA2336933A1 (en) Silicon carbide horizontal channel buffered gate semiconductor devices
EP0371785A3 (en) Lateral conductivity modulated mosfet
MY111990A (en) Mos transistor and method for making the same
CA2054498A1 (en) Mis transistor
GB2346481A (en) Field effect transistor
TW328609B (en) Field effect transistor with reduced delay variation
TW357391B (en) Semiconductor device
AU8261498A (en) Power devices in wide bandgap semiconductor
WO2000072360A3 (de) Junctionisolierter lateral-mosfet für high-/low-side-schalter
EP0709897A4 (en) SEMICONDUCTOR DEVICE
EP0739035A3 (en) DRAM bit line contact
EP0348916A3 (en) Mosfet equivalent voltage drive semiconductor device
TW348322B (en) Power semiconductor device
WO2001031711A3 (en) Vertical insulated gate field-effect device and method of making the same
TW340965B (en) Process to separate the doping of polygate and source drain regions in dual gate field effect transistors
KR920008964A (ko) 전송 전하 증폭 장치
DE59813600D1 (de) Vertikal igbt mit einer soi-struktur
JPS52117587A (en) Insulating gate type field effect semiconductor device

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent