WO2000072360A3 - Junctionisolierter lateral-mosfet für high-/low-side-schalter - Google Patents

Junctionisolierter lateral-mosfet für high-/low-side-schalter Download PDF

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Publication number
WO2000072360A3
WO2000072360A3 PCT/DE2000/001492 DE0001492W WO0072360A3 WO 2000072360 A3 WO2000072360 A3 WO 2000072360A3 DE 0001492 W DE0001492 W DE 0001492W WO 0072360 A3 WO0072360 A3 WO 0072360A3
Authority
WO
WIPO (PCT)
Prior art keywords
low side
side switches
lateral mosfet
conductive
zone
Prior art date
Application number
PCT/DE2000/001492
Other languages
English (en)
French (fr)
Other versions
WO2000072360A2 (de
Inventor
Jenoe Tihanyi
Original Assignee
Infineon Technologies Ag
Jenoe Tihanyi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Jenoe Tihanyi filed Critical Infineon Technologies Ag
Publication of WO2000072360A2 publication Critical patent/WO2000072360A2/de
Publication of WO2000072360A3 publication Critical patent/WO2000072360A3/de
Priority to US10/017,638 priority Critical patent/US6541804B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Die Erfindung betrifft einen junctionisolierten Lateral-MOSFET für High-/Low-Side-Schalter, bei dem sich zwischen einer n-leitenden Source-Zone (2) und einer n-leitenden Drain-Zone (3) eine p-leitende Wand (4) zusammen mit der Source-Zone (2) und der Drain-Zone (3) bis zu einem p-leitenden Substrat (1) erstreckt, wobei die Source-Zone (2) und die Drain-Zone (3) durch ein p-leitendes Gebiet (5) umgeben sind.
PCT/DE2000/001492 1999-05-21 2000-05-12 Junctionisolierter lateral-mosfet für high-/low-side-schalter WO2000072360A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/017,638 US6541804B2 (en) 1999-05-21 2001-12-18 Junction-isolated lateral MOSFET for high-/low-side switches

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19923466A DE19923466B4 (de) 1999-05-21 1999-05-21 Junctionsisolierter Lateral-MOSFET für High-/Low-Side-Schalter
DE19923466.3 1999-05-21

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/017,638 Continuation US6541804B2 (en) 1999-05-21 2001-12-18 Junction-isolated lateral MOSFET for high-/low-side switches

Publications (2)

Publication Number Publication Date
WO2000072360A2 WO2000072360A2 (de) 2000-11-30
WO2000072360A3 true WO2000072360A3 (de) 2001-07-19

Family

ID=7908826

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/001492 WO2000072360A2 (de) 1999-05-21 2000-05-12 Junctionisolierter lateral-mosfet für high-/low-side-schalter

Country Status (3)

Country Link
US (1) US6541804B2 (de)
DE (1) DE19923466B4 (de)
WO (1) WO2000072360A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1162664A1 (de) 2000-06-09 2001-12-12 Motorola, Inc. Laterale Halbleiteranordnung mit niedrigem Einschaltwiderstand und Verfahren zu deren Herstellung
DE10137676B4 (de) 2001-08-01 2007-08-23 Infineon Technologies Ag ZVS-Brückenschaltung zum entlasteten Schalten
DE10255359B4 (de) * 2002-11-27 2008-09-04 Infineon Technologies Ag Transistor mit Füllbereichen im Source- und/oder Draingebiet
CN1333472C (zh) * 2005-04-04 2007-08-22 江苏奥雷光电有限公司 大功率发光二极管荧光粉固化工艺
US7420248B2 (en) * 2005-08-25 2008-09-02 International Business Machines Corporation Programmable random logic arrays using PN isolation
US8354698B2 (en) * 2010-01-28 2013-01-15 System General Corp. VDMOS and JFET integrated semiconductor device
US8901897B2 (en) 2012-03-02 2014-12-02 International Business Machines Corporation Operating a DC-DC converter
US9281748B2 (en) 2012-03-02 2016-03-08 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Operating a DC-DC converter
US9236347B2 (en) 2013-10-09 2016-01-12 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Operating and manufacturing a DC-DC converter
US9219422B1 (en) 2014-08-21 2015-12-22 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Operating a DC-DC converter including a coupled inductor formed of a magnetic core and a conductive sheet
US9379619B2 (en) 2014-10-21 2016-06-28 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Dividing a single phase pulse-width modulation signal into a plurality of phases
US9618539B2 (en) 2015-05-28 2017-04-11 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Sensing current of a DC-DC converter
EP3358626B1 (de) * 2017-02-02 2022-07-20 Nxp B.V. Verfahren zur herstellung einer halbleiterschaltvorrichtung
WO2019142406A1 (ja) * 2018-01-22 2019-07-25 住友電気工業株式会社 炭化珪素半導体装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649886A (en) * 1967-11-21 1972-03-14 Philips Corp Semiconductor device having a semiconductor body of which a surface is at least locally covered with an oxide film and method of manufacturing a planar semiconductor device
US4132998A (en) * 1977-08-29 1979-01-02 Rca Corp. Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate
US5294824A (en) * 1992-07-31 1994-03-15 Motorola, Inc. High voltage transistor having reduced on-resistance
US5348215A (en) * 1992-11-04 1994-09-20 Kevin Rafferty Method of bonding hard metal objects
DE19604044A1 (de) * 1996-02-05 1997-08-14 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
WO1997029518A1 (de) * 1996-02-05 1997-08-14 Siemens Aktiengesellschaft Durch feldeffekt steuerbares halbleiterbauelement
US5726469A (en) * 1994-07-20 1998-03-10 University Of Elec. Sci. & Tech. Of China Surface voltage sustaining structure for semiconductor devices
US5831320A (en) * 1995-12-02 1998-11-03 Lg Semicon Co., Ltd. High voltage metal oxide silicon field effect transistor

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DE4309764C2 (de) * 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
DE19748523C2 (de) * 1997-11-03 1999-10-07 Siemens Ag Halbleiterbauelement, Verfahren zum Herstellen eines derartigen Halbleiterbauelementes und Verwendung des Verfahrens
KR100273291B1 (ko) * 1998-04-20 2001-01-15 김영환 모스 전계 효과 트랜지스터의 제조 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649886A (en) * 1967-11-21 1972-03-14 Philips Corp Semiconductor device having a semiconductor body of which a surface is at least locally covered with an oxide film and method of manufacturing a planar semiconductor device
US4132998A (en) * 1977-08-29 1979-01-02 Rca Corp. Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate
US5294824A (en) * 1992-07-31 1994-03-15 Motorola, Inc. High voltage transistor having reduced on-resistance
US5348215A (en) * 1992-11-04 1994-09-20 Kevin Rafferty Method of bonding hard metal objects
US5726469A (en) * 1994-07-20 1998-03-10 University Of Elec. Sci. & Tech. Of China Surface voltage sustaining structure for semiconductor devices
US5831320A (en) * 1995-12-02 1998-11-03 Lg Semicon Co., Ltd. High voltage metal oxide silicon field effect transistor
DE19604044A1 (de) * 1996-02-05 1997-08-14 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
WO1997029518A1 (de) * 1996-02-05 1997-08-14 Siemens Aktiengesellschaft Durch feldeffekt steuerbares halbleiterbauelement

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ROSSEL P: "M.O.S. TECHNOLOGIES FOR SMART POWER AND HIGH-VOLTAGE CIRCUITS", ONDE ELECTRIQUE,FR,EDITIONS CHIRON S.A. PARIS, vol. 67, no. 6, 1 November 1987 (1987-11-01), pages 58 - 69, XP000111247, ISSN: 0030-2430 *

Also Published As

Publication number Publication date
DE19923466B4 (de) 2005-09-29
DE19923466A1 (de) 2000-11-30
US20020096697A1 (en) 2002-07-25
US6541804B2 (en) 2003-04-01
WO2000072360A2 (de) 2000-11-30

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