CN108695394A - 薄膜晶体管、其制备方法、阵列基板及显示装置 - Google Patents

薄膜晶体管、其制备方法、阵列基板及显示装置 Download PDF

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CN108695394A
CN108695394A CN201710221302.5A CN201710221302A CN108695394A CN 108695394 A CN108695394 A CN 108695394A CN 201710221302 A CN201710221302 A CN 201710221302A CN 108695394 A CN108695394 A CN 108695394A
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gate electrode
active layer
tft
film transistor
thin film
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徐攀
李永谦
袁志东
蔡振飞
袁粲
李蒙
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to CN201710221302.5A priority Critical patent/CN108695394A/zh
Priority to PCT/CN2017/116903 priority patent/WO2018184403A1/en
Priority to US16/063,774 priority patent/US20210167155A1/en
Priority to EP17877378.4A priority patent/EP3507834A4/en
Publication of CN108695394A publication Critical patent/CN108695394A/zh
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Abstract

本发明公开了一种薄膜晶体管、其制备方法、阵列基板及显示装置，由于栅电极具有底部以及由底部的边缘向面向有源层方向延伸的侧壁，栅电极的底部在衬底基板的正投影覆盖有源层在衬底基板的正投影，且栅电极的侧壁作为有源层的侧面的遮光层。即利用栅电极的底部帮有源层阻挡来自下方的光，利用栅电极的侧壁帮有源层阻挡横向方向射来的光，避免有源层的侧面受光照射，从而可以整体降低光对有源层的照射，保证薄膜晶体管的器件特性的稳定性。

Description

薄膜晶体管、其制备方法、阵列基板及显示装置
技术领域
本发明涉及半导体技术领域，尤指一种薄膜晶体管、其制备方法、阵列基板及显示装置。
背景技术
随着平板显示行业的发展，对显示装置的要求越来越高，其中对面板中薄膜晶体管的迁移率也提出了更高的要求。目前，现有的薄膜晶体管(Thin Film Transistor，TFT)一般为非晶硅薄膜晶体管，非晶硅薄膜晶体管即薄膜晶体管的有源层为非晶硅材料，非晶硅薄膜晶体管的载流子的迁移率较低，其电子迁移率为0.1-1cm2V-1s-1，不能适应目前显示行业的发展。因此开发了低温多晶硅(LTPS，Low Temperature Poly Silicon)薄膜晶体管和氧化物(Oxide)薄膜晶体管。
LTPS薄膜晶体管即薄膜晶体管的有源层为低温多晶硅材料，低温多晶硅是指在较低温度下将非晶硅转变为多晶硅，LTPS薄膜晶体管其载流子迁移率很高约为100-500cm2V- 1s-1，但是其均匀性问题很难解决，因而在面向大尺寸面板的应用时，出现了很难克服的障碍。氧化物薄膜晶体管即薄膜晶体管的有源层为氧化物半导体材料，氧化物薄膜晶体管在保证较好的大尺寸均匀性的前提下，可以做到其载流子迁移率为10cm2V-1s-1。因此，氧化物薄膜晶体管由于迁移率高、均一性好、透明以及制作工艺简单，可以更好地满足大尺寸显示面板的需求，而备受人们的关注。
但是氧化物薄膜晶体管其器件特性容易受光照影响，一般光包括外界的自然光和显示器自身发出的光。通常氧化物薄膜晶体管在光照之后阈值电压会向负向偏移，特别是在OLED显示器中阈值电压的偏移会造成显示品质的下降以及显示的亮度的不稳定。
发明内容
有鉴于此，本发明实施例提供了一种薄膜晶体管、其制备方法、阵列基板及显示装置，用以解决现有技术中存在的光照对薄膜晶体管的影响。
本发明实施例提供的一种薄膜晶体管，包括：衬底基板，依次位于所述衬底基板上栅电极，栅极绝缘层，有源层和源漏电极；
所述栅电极具有底部以及由所述底部的边缘向面向所述有源层方向延伸的侧壁，所述栅电极的底部在所述衬底基板的正投影覆盖所述有源层在所述衬底基板的正投影，且所述栅电极的侧壁作为所述有源层的侧面的遮光层。
较佳地，在本发明实施例提供的薄膜晶体管中，所述栅电极的侧壁相对所述栅电极的底部的高度大于或等于所述有源层的上表面相对所述栅电极的底部的高度。
较佳地，在本发明实施例提供的薄膜晶体管中，所述栅电极的侧壁包围对应的所述有源层。
较佳地，在本发明实施例提供的薄膜晶体管中，所述栅电极面向所述有源层一侧设置有凹槽，所述凹槽的底部构成所述栅电极的底部，所述凹槽的侧壁构成所述栅电极的侧壁。
较佳地，在本发明实施例提供的薄膜晶体管中，，所述衬底基板面向所述栅电极一侧设置有凹槽，所述栅电极的底部覆盖所述凹槽的底部，所述栅电极的侧壁贴覆于所述凹槽的侧壁上。
较佳地，在本发明实施例提供的薄膜晶体管中，还包括位于所述源漏电极上方的钝化层；和/或
位于所述有源层与所述源漏电极之间的刻蚀阻挡层；所述源漏电极通过贯穿所述刻蚀阻挡层的过孔与所述有源层电连接。
较佳地，为了阻挡来自有源层上方的光，在本发明实施例提供的薄膜晶体管中，还包括位于所述钝化层上方的滤光层；
所述滤光层在所述衬底基板的正投影覆盖所述有源层在所述衬底基板的正投影。
较佳地，在本发明实施例提供的薄膜晶体管中，所述滤光层为红色滤光层。
较佳地，在本发明实施例提供的薄膜晶体管中，所述有源层的材料为氧化物半导体材料。
相应地，本发明实施例还提供了一种阵列基板，包括本发明实施例提供的上述任一种薄膜晶体管。
相应地，本发明实施例还提供了一种显示装置，包括本发明实施例提供的上述任一种阵列基板。
相应地，本发明实施例还提供了一种薄膜晶体管的制备方法，包括：
在所述衬底基板上形成栅电极的图形；其中，所述栅电极具有底部以及由所述底部的边缘向面向所述有源层方向延伸的侧壁；
形成覆盖所述栅电极的图形的栅极绝缘层；
在所述栅极绝缘层上形成有源层的图形；其中，所述栅电极的底部在所述衬底基板的正投影覆盖所述有源层在所述衬底基板的正投影，且所述栅电极的侧壁作为所述有源层的侧面的遮光层；
在所述有源层上方形成源漏电极的图形。
较佳地，在本发明实施例提供的上述制备方法中，在所述衬底基板上形成栅电极的图形具体包括：
在衬底基板上形成栅电极薄膜；
对所述栅电极薄膜进行构图形成栅电极的图形；其中所述栅电极中设置有凹槽，且所述凹槽的底部构成所述栅电极的底部，所述凹槽的侧壁构成所述栅电极的侧壁。
较佳地，在本发明实施例提供的上述制备方法中，采用半色调掩模板或灰色调掩模板对所述栅电极薄膜进行构图，通过一次构图工艺形成所述栅电极的图形。
较佳地，在本发明实施例提供的上述制备方法中，
在所述衬底基板上形成栅电极的图形具体包括：
在所述衬底基板中形成凹槽；
在形成有所述凹槽的衬底基板上形成栅电极薄膜，且所述栅电极薄膜的厚度小于所述凹槽的厚度；
对所述栅电极薄膜进行构图，至少保留覆盖所述凹槽底部和贴覆于所述凹槽侧壁的栅电极薄膜，形成所述栅电极的图形，其中所述栅电极的底部覆盖所述凹槽的底部，所述栅电极的侧壁贴覆于所述凹槽的侧壁上。
本发明有益效果如下：
本发明实施例提供的上述薄膜晶体管、其制备方法、阵列基板及显示装置，由于栅电极具有底部以及由底部的边缘向面向有源层方向延伸的侧壁，栅电极的底部在衬底基板的正投影覆盖有源层在衬底基板的正投影，且栅电极的侧壁作为有源层的侧面的遮光层。即利用栅电极的的底部帮有源层阻挡来自下方的光，利用栅电极的侧壁帮有源层阻挡横向方向射来的光，避免有源层的侧面受光照射，从而可以整体降低光对有源层的照射，保证薄膜晶体管的器件特性的稳定性。
附图说明
图1为本发明实施例提供的一种薄膜晶体管的结构示意图；
图2为本发明实施例提供的另一种薄膜晶体管的结构示意图；
图3为本发明实施例提供的另一种薄膜晶体管的结构示意图；
图4为本发明实施例提供的阵列基板的结构示意图；
图5为本发明实施例提供的薄膜晶体管的制备方法的流程示意图；
图6a至图6d为本发明实施例提供的一种制备方法中形成栅电极的图形的过程中执行各步骤后的结构示意；
图7a至图7c为本发明实施例提供的另一种制备方法中形成栅电极的图形的过程中执行各步骤后的结构示意。
具体实施方式
下面结合附图，对本发明实施例提供的薄膜晶体管、其制备方法、阵列基板及显示装置的具体实施方式进行详细地说明。
其中，附图中各膜层厚度和形状不反映薄膜晶体管的真实比例，目的只是示意说明本发明内容。
本发明实施例提供的一种薄膜晶体管，如图1和图2所示，包括：衬底基板01，依次位于衬底基板01上栅电极02，栅极绝缘层03，有源层04和源漏电极05；
栅电极02具有底部以及由底部的边缘向面向有源层04方向延伸的侧壁，栅电极02的底部在衬底基板01的正投影覆盖有源层04在衬底基板01的正投影，且栅电极02的侧壁作为有源层04的侧面的遮光层。
本发明实施例提供的上述薄膜晶体管，栅电极具有底部以及由底部的边缘向面向有源层方向延伸的侧壁，栅电极的底部在衬底基板的正投影覆盖有源层在衬底基板的正投影，且栅电极的侧壁作为有源层的侧面的遮光层。即利用栅电极的的底部帮有源层阻挡来自下方的光，利用栅电极的侧壁帮有源层阻挡横向方向射来的光，避免有源层的侧面受光照射，从而可以整体降低光对有源层的照射，保证薄膜晶体管的器件特性的稳定性。
在具体实施时，在本发明实施例提供的薄膜晶体管中，如图1和图2所示，栅电极02的侧壁相对栅电极02的底部的高度h1大于或等于有源层04的上表面相对栅电极02的底部的高度h2。
较佳地，在本发明实施例提供给的薄膜晶体管中，栅电极的侧壁包围对应的有源层。这样可以保证有源层的侧面完全被栅电极包围，最大程度的保证有源层的侧面不能被光照射到。
在具体实施时，在本发明实施例提供的薄膜晶体管中，如图2所示，栅电极02面向有源层04一侧设置有凹槽，凹槽的底部构成栅电极02的底部，所凹槽的侧壁构成栅电极02的侧壁。这样可以通过一次构图工艺在形成栅电极图形时，直接在栅电极上形成凹槽，在现有薄膜晶体管的制备工艺基础上不用单独增加构图工艺。
或者，在具体实施时，在本发明实施例提供的薄膜晶体管中，或如图1所示，衬底基板01面向栅电极02一侧设置有凹槽，栅电极02的底部覆盖凹槽的底部，栅电极02的侧壁贴覆于凹槽的侧壁上。
需要说明的是，在本发明实施例提供的薄膜晶体管中，衬底基板是指位于栅电极下方所有膜层，例如衬底基板可以仅是一个基板，这时凹槽就位于基板中，当然衬底基板也可以是包括基板以及基板上的一些膜层，这时凹槽可以位于相邻的至少一层膜层中，在此不作限定。
在具体实施时，由于在衬底基板上形成凹槽的工艺一般比较复杂，因此较佳地，在本发明实施了提供的薄膜晶体管中，凹槽位于栅电极上。
在具体实施时，当有源层的材料为氧化物半导体材料时，有源层对光比较敏感，因此本发明实施例提供的薄膜晶体管的结构尤为适用于氧化物薄膜晶体管。
因此，在具体实施时，本发明实施例提供的薄膜晶体管，有源层的材料为氧化物半导体材料。
在具体实施时，在本发明实施提供的薄膜晶体管中，如图3所示，还包括位于源漏电极05上方的钝化层06。利用钝化层06对源漏电极05以及有源层04进行保护。
在具体实施时，本发明实施例提供的薄膜晶体管中，为了避免形成源漏电极时对有源层造成损伤，如图3所示，还包括位于有源层04与源漏电极05之间的刻蚀阻挡层07；
源漏电极05通过贯穿刻蚀阻挡层07的过孔与有源层04电连接。
进一步地，在本发明实施例提供的薄膜晶体管中，为了防止有源层上方的光照射至有源层上，如图3所示，还包括位于钝化层06上方的滤光层08；
滤光层08在衬底基板01的正投影覆盖有源层04在衬底基板01的正投影。
较佳地，在本发明实施例提供的薄膜晶体管中，滤光层为红色滤光层。这是因为有源层一般对短波光例如可见光中的绿光和蓝光比较敏感，而长波光例如红光对有源层的影响不大，因此滤光层只要能滤掉短波光就能极大的降低有源层线上方的光对有源层的影响。并且将滤光层设置为红色滤光层还可以与显示面板中的像素区域的红色滤光层同层制备，从而可以减少构图工艺，节约成本。
当然，在具体实施时，在本发明实施例提供的薄膜晶体管中，滤光层也可以是由遮光材料制作，这样滤光层可以遮挡所有的光，但是会增加一道构图工艺。
基于同一发明构思，本发明实施例还提供了一种阵列基板，包括本发明实施例提供的上述薄膜晶体管，该阵列基板的实施可以参见上述薄膜晶体管的实施例，重复之处不再赘述。
本发明实施例提供的上述阵列基板，栅电极具有底部以及由底部的边缘向面向有源层方向延伸的侧壁，栅电极的底部在衬底基板的正投影覆盖有源层在衬底基板的正投影，且栅电极的侧壁作为有源层的侧面的遮光层。即利用栅电极的的底部帮有源层阻挡来自下方的光，利用栅电极的侧壁帮有源层阻挡横向方向射来的光，避免有源层的侧面受光照射，从而可以整体降低光对有源层的照射，保证薄膜晶体管的器件特性的稳定性。
在具体实施时，当本发明实施例提供的上述阵列基板应用于OLED显示面板时，如图4所示，在滤光层08上一般还设置有发光层09和阴极层10，阴极层10反射回来的光可以被滤光层08滤掉。
基于同一发明构思，本发明实施例还提供了一种显示装置，包括本发明实施例提供的上述阵列基板，该显示装置可以是液晶显示装置，也可以是OLED显示装置，对于显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本发明的限制。该显示装置的实施可以参见上述阵列基板的实施例，重复之处不再赘述。
在具体实施时，该显示装置可以为：显示面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。该显示装置的实施可以参见上述显示面板的实施例，重复之处不再赘述。
在具体实施时，液晶显示装置中光照对薄膜晶体管的影响对显示品质的影响不是很明显，但是OLED显示装置由于属于电流驱动，光照对薄膜晶体管的影响对显示品质的影响特别明显，因此，本发明实施例提供的显示装置应用于OLED显示装置效果更佳。
基于统一发明构思，本发明实施了还提供了一种薄膜晶体管的制备方法，如5图所示，包括以下步骤：
S501、在衬底基板上形成栅电极的图形；其中，栅电极具有底部以及由底部的边缘向面向有源层方向延伸的侧壁；
S502、形成覆盖栅电极的图形的栅极绝缘层；
S503、在栅极绝缘层上形成有源层的图形；其中，栅电极的底部在衬底基板的正投影覆盖有源层在衬底基板的正投影，且栅电极的侧壁作为有源层的侧面的遮光层；
S504、在有源层上方形成源漏电极的图形。
本发明实施例提供的上述制备方法，由于栅电极具有底部以及由底部的边缘向面向有源层方向延伸的侧壁，栅电极的底部在衬底基板的正投影覆盖有源层在衬底基板的正投影，且栅电极的侧壁作为有源层的侧面的遮光层。即利用栅电极的的底部帮有源层阻挡来自下方的光，利用栅电极的侧壁帮有源层阻挡横向方向射来的光，避免有源层的侧面受光照射，从而可以整体降低光对有源层的照射，保证薄膜晶体管的器件特性的稳定性。
在具体实施时，在本发明实施例提供的制备方法中，步骤S501在衬底基板上形成栅电极的图形具体包括：
在衬底基板上形成栅电极薄膜；
对栅电极薄膜进行构图形成栅电极的图形；其中栅电极中设置有凹槽，且凹槽的底部构成栅电极的底部，凹槽的侧壁构成栅电极的侧壁。
在具体实施时，为了减少构图次数，在本发明实施例提供的制备方法中，采用半色调掩模板或灰色调掩模板对栅电极薄膜进行构图，通过一次构图工艺形成栅电极的图形。具体过程如下：
(1)在衬底基板01上形成栅电极薄膜11，如图6a所示；
(2)在栅电极薄膜11上形成光刻胶层12，如图6b所示；
(3)利用半色调(或灰色调)掩模板13对光刻胶层12进行处理，定义出栅电极的图性，其中掩膜板13中部分透光区A对应凹槽所在的区域；如图6c所示；
(4)以处理后的光刻胶层12为掩膜，刻蚀栅电极薄膜11，从而形成栅电极02的图形，如图6d所示。
在具体实施时，在本发明实施例提供的上述制备方法中，通过调节掩膜板中部分透光区的透光率可以调节凹槽的深度。
或者，在具体实施时，在本发明实施例提供的制备方法中，步骤S501在衬底基板上形成栅电极的图形具体包括：在衬底基板上形成栅电极的图形具体包括：
(1)在衬底基板01中形成凹槽，如图7a所示；
(2)在形成有凹槽的衬底基板01上形成栅电极薄膜11，且栅电极薄膜11的厚度小于凹槽的厚度，如图7b所示；
(3)对栅电极薄膜11进行构图，至少保留覆盖凹槽底部和贴覆于凹槽侧壁的栅电极薄膜11，形成栅电极02的图形，其中栅电极02的底部覆盖凹槽的底部，栅电极02的侧壁贴覆于凹槽的侧壁上，如图7c所示。
需要说明的是，在本发明实施例提供的上述制备方法中，构图工艺可只包括光刻工艺，或，可以包括光刻工艺以及刻蚀步骤，同时还可以包括打印、喷墨等其他用于形成预定图形的工艺；光刻工艺是指包括成膜、曝光、显影等工艺过程的利用光刻胶、掩模板、曝光机等形成图形的工艺。在具体实施时，可根据本发明中所形成的结构选择相应的构图工艺。
本发明实施例提供的上述薄膜晶体管、其制备方法、阵列基板及显示装置，由于栅电极具有底部以及由底部的边缘向面向有源层方向延伸的侧壁，栅电极的底部在衬底基板的正投影覆盖有源层在衬底基板的正投影，且栅电极的侧壁作为有源层的侧面的遮光层。即利用栅电极的的底部帮有源层阻挡来自下方的光，利用栅电极的侧壁帮有源层阻挡横向方向射来的光，避免有源层的侧面受光照射，从而可以整体降低光对有源层的照射，保证薄膜晶体管的器件特性的稳定性。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (15)

1.一种薄膜晶体管，包括：衬底基板，依次位于所述衬底基板上的栅电极，栅极绝缘层，有源层和源漏电极；其特征在于：
所述栅电极具有底部以及由所述底部的边缘向面向所述有源层方向延伸的侧壁，所述栅电极的底部在所述衬底基板的正投影覆盖所述有源层在所述衬底基板的正投影，且所述栅电极的侧壁作为所述有源层的侧面的遮光层。
2.如权利要求1所述的薄膜晶体管，其特征在于，所述栅电极的侧壁相对所述栅电极的底部的高度大于或等于所述有源层的上表面相对所述栅电极的底部的高度。
3.如权利要求2所述的薄膜晶体管，其特征在于，所述栅电极的侧壁包围对应的所述有源层。
4.如权利要求3所述的薄膜晶体管，其特征在于，所述栅电极面向所述有源层一侧设置有凹槽，所述凹槽的底部构成所述栅电极的底部，所述凹槽的侧壁构成所述栅电极的侧壁。
5.如权利要求3所述的薄膜晶体管，其特征在于，所述衬底基板面向所述栅电极一侧设置有凹槽，所述栅电极的底部覆盖所述凹槽的底部，所述栅电极的侧壁贴覆于所述凹槽的侧壁上。
6.如权利要求1-5任一项所述的薄膜晶体管，其特征在于，还包括：位于所述源漏电极上方的钝化层；和/或
位于所述有源层与所述源漏电极之间的刻蚀阻挡层，且所述源漏电极通过贯穿所述刻蚀阻挡层的过孔与所述有源层电连接。
7.如权利要求6所述的薄膜晶体管，其特征在于，还包括位于所述钝化层上方的滤光层；
所述滤光层在所述衬底基板的正投影覆盖所述有源层在所述衬底基板的正投影。
8.如权利要求7所述的薄膜晶体管，其特征在于，所述滤光层为红色滤光层。
9.如权利要求1-5任一项所述的薄膜晶体管，其特征在于，所述有源层的材料为氧化物半导体材料。
10.一种阵列基板，其特征在于，包括如权利要去1-9任一项所述的薄膜晶体管。
11.一种显示装置，其特征在于，包括如权利要求10所述的阵列基板。
12.一种薄膜晶体管的制备方法，其特征在于，包括：
在所述衬底基板上形成栅电极的图形；其中，所述栅电极具有底部以及由所述底部的边缘向面向所述有源层方向延伸的侧壁；
形成覆盖所述栅电极的图形的栅极绝缘层；
在所述栅极绝缘层上形成有源层的图形；其中，所述栅电极的底部在所述衬底基板的正投影覆盖所述有源层在所述衬底基板的正投影，且所述栅电极的侧壁作为所述有源层的侧面的遮光层；
在所述有源层上方形成源漏电极的图形。
13.如权利要求12所述的制备方法，其特征在于，在所述衬底基板上形成栅电极的图形具体包括：
在衬底基板上形成栅电极薄膜；
对所述栅电极薄膜进行构图形成栅电极的图形；其中所述栅电极中设置有凹槽，且所述凹槽的底部构成所述栅电极的底部，所述凹槽的侧壁构成所述栅电极的侧壁。
14.如权利要求13所述的制备方法，其特征在于，采用半色调掩模板或灰色调掩模板对所述栅电极薄膜进行构图，通过一次构图工艺形成所述栅电极的图形。
15.如权利要求12所述的制备方法，其特征在于，在所述衬底基板上形成栅电极的图形具体包括：
在所述衬底基板中形成凹槽；
在形成有所述凹槽的衬底基板上形成栅电极薄膜，且所述栅电极薄膜的厚度小于所述凹槽的厚度；
对所述栅电极薄膜进行构图，至少保留覆盖所述凹槽底部和贴覆于所述凹槽侧壁的栅电极薄膜，形成所述栅电极的图形，其中所述栅电极的底部覆盖所述凹槽的底部，所述栅电极的侧壁贴覆于所述凹槽的侧壁上。
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