CN107533971A - 湿式蚀刻方法和蚀刻液 - Google Patents
湿式蚀刻方法和蚀刻液 Download PDFInfo
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- CN107533971A CN107533971A CN201680027447.5A CN201680027447A CN107533971A CN 107533971 A CN107533971 A CN 107533971A CN 201680027447 A CN201680027447 A CN 201680027447A CN 107533971 A CN107533971 A CN 107533971A
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- Prior art keywords
- wet
- etching solution
- beta
- diketon
- etching method
- Prior art date
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- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 77
- 239000002184 metal Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000003960 organic solvent Substances 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 16
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims abstract description 13
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000654 additive Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 11
- 230000000996 additive effect Effects 0.000 claims description 11
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical compound FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 claims description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 7
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 7
- CVZIHXRHSDYALS-UHFFFAOYSA-N 1-fluoropentane-2,4-dione Chemical class CC(=O)CC(=O)CF CVZIHXRHSDYALS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 150000002576 ketones Chemical class 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 150000002978 peroxides Chemical class 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000005368 silicate glass Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 125000000175 2-thienyl group Chemical group S1C([*])=C([H])C([H])=C1[H] 0.000 claims description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 2
- 150000001408 amides Chemical class 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 2
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- VTIIJXUACCWYHX-UHFFFAOYSA-L disodium;carboxylatooxy carbonate Chemical compound [Na+].[Na+].[O-]C(=O)OOC([O-])=O VTIIJXUACCWYHX-UHFFFAOYSA-L 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 claims description 2
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 2
- 235000019394 potassium persulphate Nutrition 0.000 claims description 2
- XXQBEVHPUKOQEO-UHFFFAOYSA-N potassium superoxide Chemical group [K+].[K+].[O-][O-] XXQBEVHPUKOQEO-UHFFFAOYSA-N 0.000 claims description 2
- 150000003138 primary alcohols Chemical class 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 150000003333 secondary alcohols Chemical class 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229940045872 sodium percarbonate Drugs 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- SHXHPUAKLCCLDV-UHFFFAOYSA-N 1,1,1-trifluoropentane-2,4-dione Chemical compound CC(=O)CC(=O)C(F)(F)F SHXHPUAKLCCLDV-UHFFFAOYSA-N 0.000 claims 4
- RPXLNSNMPLHDLQ-UHFFFAOYSA-N 1,1,1,5,5,5-hexafluoro-3-methylpentane-2,4-dione Chemical class FC(F)(F)C(=O)C(C)C(=O)C(F)(F)F RPXLNSNMPLHDLQ-UHFFFAOYSA-N 0.000 claims 1
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims 1
- 150000003509 tertiary alcohols Chemical class 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 125000005594 diketone group Chemical group 0.000 abstract 2
- 230000000052 comparative effect Effects 0.000 description 14
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- YVXIQVXKXBYVRO-UHFFFAOYSA-N 2,2,2-trifluoroacetic acid 1,1,1-trifluoropentane-2,4-dione Chemical compound OC(=O)C(F)(F)F.CC(=O)CC(=O)C(F)(F)F YVXIQVXKXBYVRO-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000009835 boiling Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- -1 amine compound Chemical class 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XXZCIYUJYUESMD-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-(morpholin-4-ylmethyl)pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)CN1CCOCC1 XXZCIYUJYUESMD-UHFFFAOYSA-N 0.000 description 1
- WWSJZGAPAVMETJ-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-ethoxypyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)OCC WWSJZGAPAVMETJ-UHFFFAOYSA-N 0.000 description 1
- ZRNSSRODJSSVEJ-UHFFFAOYSA-N 2-methylpentacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCC(C)C ZRNSSRODJSSVEJ-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JTABHYSLUVGCPP-UHFFFAOYSA-N CC(=O)C.C(C)(=O)F Chemical compound CC(=O)C.C(C)(=O)F JTABHYSLUVGCPP-UHFFFAOYSA-N 0.000 description 1
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 229910002535 CuZn Inorganic materials 0.000 description 1
- 229910002555 FeNi Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 229910003266 NiCo Inorganic materials 0.000 description 1
- 229910003962 NiZn Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Chemical class 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- ZEWMZYKTKNUFEF-UHFFFAOYSA-N indium;oxozinc Chemical compound [In].[Zn]=O ZEWMZYKTKNUFEF-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N monofluoromethane Natural products FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 125000004044 trifluoroacetyl group Chemical group FC(C(=O)*)(F)F 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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Abstract
一种湿式蚀刻方法,其特征在于,其是使用蚀刻液对基板上的含金属膜进行蚀刻的湿式蚀刻方法,前述蚀刻液是三氟甲基与羰基键合而成的β‑二酮的有机溶剂溶液,前述含金属膜包含能够与前述β‑二酮形成络合物的金属元素。
Description
技术领域
本发明涉及在半导体制造工序等中使用的含金属膜的湿式蚀刻方法、蚀刻液。
背景技术
在半导体元件的制造工序中,为了将作为金属栅材料、电极材料或磁性材料等的金属膜、作为压电材料、LED发光材料、透明电极材料或介电材料等的金属化合物膜等含金属膜形成期望图案而进行蚀刻处理。
作为含金属膜的蚀刻方法,已知使用了β-二酮的干法蚀刻方法。例如,公开了一种图案化金属膜的形成方法,其具备如下工序:对包含过渡金属的晶种进行各向异性地氧化,使用HFAc等气体进行去除的干法蚀刻工序(专利文献1)。另外,公开了一种干法蚀刻方法,其使用包含β-二酮和H2O的蚀刻气体,对在基板上形成的Co、Fe、Zn、Mn、Ni等的金属膜进行干法蚀刻(专利文献2)。
然而,除了专利文献1~2所记载的使用气体的干法蚀刻以外,有使用化学溶液的湿式蚀刻。半导体元件的制造工序中的湿式蚀刻使用了包含无机酸、有机酸、氧化性物质的蚀刻液(例如,专利文献3、4、5)。
此外,公开了一种蚀刻方法,其使用水性介质中包含有机胺化合物、碱性化合物和氧化剂且pH为7~14的蚀刻液对Ti进行选择性地蚀刻(专利文献6)。
现有技术文献
专利文献
专利文献1:日本特开2012-114287号公报
专利文献2:日本特开2014-236096号公报
专利文献3:日本特开2013-149852号公报
专利文献4:日本特表2008-541447号公报
专利文献5:日本特表2008-512869号公报
专利文献6:日本特开2013-33942号公报
发明内容
发明要解决的问题
与干法蚀刻相比,湿式蚀刻在装置、化学溶液的成本低且能够一次性处理大量的基板这方面有利。然而,以往的蚀刻液的情况,不仅与作为蚀刻对象的含金属膜反应,有时还与不是蚀刻对象的基板等反应,而存在使安装有含金属膜的器件的特性恶化这样的问题。
本发明是鉴于上述问题而完成的,其目的在于提供使用蚀刻液来有效地对基板上的含金属膜进行蚀刻的方法。
用于解决问题的方案
本发明人等发现:若使用三氟甲基与羰基键合而成的β-二酮的有机溶剂溶液作为蚀刻液,则β-二酮与金属形成络合物,能够对基板上的含金属膜进行蚀刻,以至完成了本发明。
即,本发明的第一方案是一种湿式蚀刻方法,其特征在于,其是使用蚀刻液对基板上的含金属膜进行蚀刻的湿式蚀刻方法,前述蚀刻液是三氟甲基与羰基键合而成的β-二酮、及有机溶剂的溶液,前述含金属膜包含能够与前述β-二酮形成络合物的金属元素。
另外,本发明的第二方案是一种蚀刻液,其特征在于,包含:选自由异丙醇、甲醇、乙醇、丙二醇单甲醚乙酸酯(PGMEA)、甲乙酮(MEK)、和丙酮组成的组中的至少1种有机溶剂、及三氟甲基与羰基键合而成的β-二酮。
发明的效果
根据本发明,能够提供:使用蚀刻液来有效地对基板上的含金属膜进行蚀刻的方法。
具体实施方式
(含金属膜的湿式蚀刻方法)
本发明的湿式蚀刻方法中,使用包含三氟甲基与羰基键合而成的β-二酮的蚀刻液对基板上的含金属膜进行蚀刻。
在本发明的湿式蚀刻方法中作为蚀刻对象的含金属膜包含能够与前述β-二酮形成络合物的金属元素。例如,作为含金属膜所包含的金属元素,可列举出:Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Mn、Re、Fe、Ru、Os、Co、Rh、Ir、Ni、Pd、Pt、Cu、Ag、Au、Zn、Cd、Al、Ga、In、Sn、Pb、和As。这些金属能与β-二酮形成络合物,与蚀刻液中的β-二酮形成络合物而溶解于蚀刻液中。进而,作为含金属膜所包含的金属元素,优选:Ti、Zr、Hf、V、Cr、Mn、Fe、Ru、Os、Co、Rh、Ir、Ni、Pd、Pt、Cu、Zn、Al、Ga、In、Sn、Pb和As,更优选:Ti、Zr、Hf、Cr、Fe、Ru、Co、Ni、Pt、Cu、Zn、Al、Ga、In、Sn和Pb。
含金属膜优选为:由一种金属元素形成的单质的膜、包含金属元素的合金的膜、包含金属元素的化合物的膜的任一种。也可以对这些含金属膜层叠而成膜进行蚀刻。作为包含多种上述金属元素的合金的膜,不仅可以是NiCo、CoFe、CoPt、MnZn、NiZn、CuZn、FeNi等合金膜,而且还可以是CoFeB等掺杂了其它元素而成的合金膜。另外,作为上述金属元素的化合物膜,可列举出:包含多个上述金属元素的金属间化合物;铪氧化物、钌氧化物、钛氧化物、铟锡氧化物(ITO)、铟锌氧化物(IZO)、镓氧化物、锆钛酸铅等氧化物膜;GaN、AlGaN等氮化物膜;NiSi、CoSi、HfSi等硅化物膜;InAs、GaAs、InGaAs等砷化物膜;InP、GaP等磷化物膜等。另外,对于包含多个元素的含金属膜,各元素的组成比可以取任意的值。
需要说明的是,在本发明中,基板只要是能够成膜含金属膜且由在湿式蚀刻时不与蚀刻液反应的材料形成就没有特别限定,例如可以使用:氧化硅、多晶硅、氮化硅、氮氧化硅、碳化硅等硅系半导体材料基板、钠钙玻璃、硼硅酸玻璃、石英玻璃等硅酸盐玻璃材料基板。另外,除了含金属膜以外基板上还可以具有硅系半导体材料的膜等。
本发明的蚀刻液是三氟甲基与羰基键合而成的β-二酮的有机溶剂溶液。相比于三氟甲基未与羰基键合的β-二酮,三氟甲基(CF3)与羰基(C=O)键合的β-二酮可以快速地进行蚀刻,而且与金属形成的络合物不易发生聚集且不易析出固体。因此,即使不向蚀刻液中添加酸等,三氟甲基与羰基键合而成的β-二酮也能够实现实用上的蚀刻速度。蚀刻液中所包含的β-二酮只要是包含三氟甲基(CF3)与羰基(C=O)键合的部位(三氟乙酰基)的β-二酮就没有特别限定,例如,优选为:选自由六氟乙酰丙酮(1,1,1,5,5,5-六氟-2,4-戊二酮)、三氟乙酰丙酮(1,1,1-三氟-2,4-戊二酮)、1,1,1,6,6,6-六氟-2,4-己二酮、4,4,4-三氟-1-(2-噻吩基)-1,3-丁二酮、4,4,4-三氟-1-苯基-1,3-丁二酮、1,1,1,5,5,5-六氟-3-甲基-2,4-戊二酮、1,1,1,3,5,5,5-七氟-2,4-戊二酮和1,1,1-三氟-5,5-二甲基-2,4-己二酮组成的组中的1种或它们的组合。
作为用于蚀刻液的有机溶剂,没有特别限定,例如可以使用:一级醇、二级醇、三级醇、苄醇、醚、酯、酮、胺、酰胺、甘醇、甘醇醚、卤代烷烃或它们的组合。具体而言,作为有机溶剂,可以使用:异丙醇、甲醇、乙醇、丙二醇单甲醚乙酸酯(PGMEA)、甲乙酮(MEK)、丙酮或它们的组合。原因在于这些有机溶剂常用且价格便宜,而且与β-二酮的相容性优异。
需要说明的是,β-二酮形成水合物时会以固体的形式析出,因此使用水作为溶剂时,会析出大量固体,而无法用作蚀刻液。因此,蚀刻液中所包含的水分优选为1质量%以下。β-二酮形成水合物时,以固体的形式析出,因此包含较多水分时在蚀刻液中会以微粒的形式生成固体成分。具有微粒的蚀刻液,其微粒会残留在处理对象中,就对器件产生不良影响,故而不优选。
另外,蚀刻液中的β-二酮的浓度优选为1~80质量%、更优选为5~50质量%、进一步优选为10~20质量%。β-二酮过多时,由于通常β-二酮比有机溶剂昂贵而使蚀刻液变得过于昂贵。另一方面,β-二酮过少时,有蚀刻无法继续的担心。
蚀刻液可以仅由有机溶剂和β-二酮构成,进而,为了提高蚀刻速度、或提高蚀刻选择性,也可以进一步使蚀刻液包含过氧化物作为添加剂。添加剂特别优选为选自由过氧化氢、过乙酸、过碳酸钠、过硫酸铵、过硫酸钠、过硫酸钾和过氧硫酸钾组成的组中的过氧化物。这些添加剂可以普遍获得,而且能够使形成含金属膜的金属元素的氧化进行、促进金属元素与β-二酮的络合反应,故而优选在蚀刻液中添加。
另外,只要不对处理对象物产生不良影响,为了提高蚀刻速度、或提高蚀刻选择性,蚀刻液中就可以进一步包含各种酸作为添加剂。添加剂特别优选选自由柠檬酸、甲酸、乙酸和三氟乙酸组成的组。
添加剂的添加量相对于蚀刻液优选为0.01~20质量%、更优选为0.5~15质量%、进一步优选为1~10质量%。另外,也可以仅由有机溶剂、β-二酮和添加剂构成蚀刻液。
在本发明中,将具有含金属膜的处理对象物浸渍在蚀刻液中、或将蚀刻液放入配置了具有含金属膜的处理对象物的蚀刻装置内等,来使蚀刻液与处理对象物的含金属膜接触并反应,而形成金属络合物,由此使含金属膜溶解于蚀刻液中,进行蚀刻。
因此,本发明的蚀刻液对含有能与β-二酮形成络合物的金属的材料进行蚀刻,但不蚀刻不与β-二酮形成络合物的硅系半导体材料、硅酸盐玻璃材料,因此若使用本发明的湿式蚀刻方法,则能够相对于基板仅对含金属膜进行选择性地蚀刻。另外,基板上具有2种以上含金属膜时,也可以利用所包含的金属等导致的蚀刻速度之差,相对于别的含金属膜选择性地对某一含金属膜进行蚀刻。
在本发明的湿式蚀刻方法中,蚀刻时的蚀刻液的温度只要是使蚀刻液保持液体状态的温度就没有特别限定,可以适宜设定为在-10~100℃左右。例如,六氟乙酰丙酮、1,1,1,3,5,5,5-七氟-2,4-戊二酮的沸点为约70℃,三氟乙酰丙酮的沸点为约105~107℃。需要说明的是,虽然并不知晓六氟乙酰丙酮和三氟乙酰丙酮的经严格测定的熔点值,但通常有机物被氟化时熔点和沸点会降低,故而乙酰丙酮的沸点为140℃、熔点为-23℃,因此可认为被氟化的六氟乙酰丙酮和三氟乙酰丙酮的熔点会更低。
蚀刻时间没有特别限制,考虑到半导体器件制造工艺的效率,优选为60分以内。此处,蚀刻时间是处理对象物与蚀刻液接触的时间,例如,是指在蚀刻液中浸渍作为处理对象物的基板的时间;向在进行蚀刻处理的内部设置基板的处理室的内部导入蚀刻液,然后,为了结束蚀刻处理而将该处理室内的蚀刻液排出为止的时间。
若使用本发明的湿式蚀刻方法,则能够不对蚀刻对象以外的基板、硅系半导体材料的膜进行蚀刻,而对蚀刻对象的含金属膜进行蚀刻。
另外,若使用本发明的湿式蚀刻方法,则能够使用比干法蚀刻装置价格便宜的湿式蚀刻装置对含金属膜进行蚀刻,因此可以价格便宜地制造半导体器件。
(器件)
根据本发明的湿式蚀刻方法,能够对以往的半导体制造工艺中所制造的器件的含金属膜进行蚀刻。本发明的器件通过使用利用本发明的湿式蚀刻方法蚀刻的含金属膜,从而能够价格便宜地制造。作为这样的器件,例如可以列举出:太阳能电池池、硬盘驱动器、逻辑IC(integrated circuit)、微处理器、动态随机存取存储器、相变型存储器、强介电体存储器、磁阻存储器、电阻变化型存储器、MEMS等。
实施例
以下通过实施例对本发明进行详细地说明,但本发明不限定于前述实施例。
作为样品,使用具有厚度0.1mm的各种膜的2cm×2cm的硅基板。各种金属的单质、合金、化合物的膜通过溅射或化学气相沉积法(CVD)进行制膜。
需要说明的是,p-Si是多晶硅(polysilicon)的简写,是指多晶硅(polycrystalline silicon)。SiN是氮化硅,化学式由SiNx表示。SiON是氮氧化硅,化学式由SiOxNy表示。ITO是铟锡氧化物,是氧化铟中包含少量氧化锡的复合氧化物。IZO是铟锌氧化物,是氧化铟中包含少量氧化锌的复合氧化物。PZT是锆钛酸铅,化学式中由Pb(ZrxTi1-x)O3表示。CoFe、GaN、NiSi、CoSi、HfSi并不意味着各元素是1比1的组成比,各组成比可以取任意的值。
在湿式蚀刻试验中,作为β-二酮使用六氟乙酰丙酮(HFAc)与三氟乙酰丙酮(TFAc)、1,1,1,3,5,5,5-七氟-2,4-戊二酮(HFPD)、乙酰丙酮(AcAc),作为有机溶剂使用异丙醇(IPA)与丙酮、甲醇,作为添加剂使用过氧化氢(H2O2),进而添加少量水等,由上述各种组成制作蚀刻液。在实施例4-1等中,以相对于蚀刻液整体为1质量%的方式加入浓度35质量%的过氧化氢水溶液。
另外,作为比较例,使用1质量%的稀硝酸,对SiN、SiOx和Co的膜进行湿式蚀刻。
蚀刻速度根据各种膜的湿式蚀刻前后的膜厚及蚀刻处理时间而计算出。
以下将实验结果示于表1~3。
[表1]
[表2]
※在比较例10-1、10-2中,在蚀刻液中产生微粒。
[表3]
如实施例1-1和1-2、及比较例1-1和1-2所示,在本发明的蚀刻液中,Co与SiN或与SiOx的选择比为33以上,Fe与SiN或与SiOx的选择比为52以上。进而,如实施例1-1~1-23和比较例1-1~1-5所示,本发明的蚀刻液可以相对于硅系材料选择性地蚀刻包含规定的金属元素的含金属膜。
另外,如实施例2-1、2-2、比较例2-1、2-2所示,即使使用TFAc作为β-二酮,Co与SiN或与SiOx的选择比也为25以上,Fe与SiN或与SiOx的选择比也为46以上,能够相对于硅系材料选择性地蚀刻含金属膜。
另外,如实施例3-1、3-2、比较例3-1、3-2所示,即使使用HFPD作为β-二酮,Co与SiN或与SiOx的选择比也为28以上,Fe与SiN或与SiOx的选择比也为48以上,可以相对于硅系材料选择性地蚀刻含金属膜。
如实施例4-1、4-2、比较例4-1、4-2所示,即使使用丙酮作为有机溶剂,也能够同样地相对于硅系材料选择性地蚀刻含金属膜。
如实施例5-1、5-2、比较例5-1、5-2所示,即使使用甲酮作为有机溶剂,也能够同样地相对于硅系材料选择性地蚀刻含金属膜。
如实施例6-1、6-2、比较例6-1、6-2所示,通过加入过氧化氢作为添加剂,从而使Co与Fe的蚀刻速度提高,使含金属膜与硅系材料的选择比进一步提高。
如实施例7-1、8-1、比较例7-1、8-1所示,无论HFAc的量为5质量%或为50质量%,均能够相对于硅系材料选择性地蚀刻含金属膜。
另外,在实施例9-1、比较例9-1中,即使使用包含1质量%水分的蚀刻液,也能够相对于硅系材料选择性地蚀刻含金属膜。实施例10-1、比较例10-1的蚀刻液中包含5质量%的水分,因此在蚀刻液中产生微粒,被蚀刻物中也残留有微粒。像这样残留了微粒的蚀刻液无法在用于半导体器件的含金属膜的蚀刻中使用。
另一方面,如比较例11-1、11-2所示,若使用乙酰丙酮作为β-二酮,则无论对于Co还是对于SiO2蚀刻速度均慢,而难以用作蚀刻液。
另外,如比较例12-1~12-3所示,稀硝酸也与SiN和SiOx反应,因此也会蚀刻硅系材料。Co与SiN的选择比为6左右,Co与SiOx的选择比为3左右,选择比也欠佳。
Claims (17)
1.一种湿式蚀刻方法,其特征在于,其是使用蚀刻液对基板上的含金属膜进行蚀刻的湿式蚀刻方法,
所述蚀刻液是β-二酮及有机溶剂的溶液,所述β-二酮是三氟甲基与羰基键合而成的β-二酮,
所述含金属膜包含能够与所述β-二酮形成络合物的金属元素。
2.根据权利要求1所述的湿式蚀刻方法,其特征在于,所述金属元素是选自由Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Mn、Re、Fe、Ru、Os、Co、Rh、Ir、Ni、Pd、Pt、Cu、Ag、Au、Zn、Cd、Al、Ga、In、Sn、Pb和As组成的组中的至少1种金属元素。
3.根据权利要求1或2所述的湿式蚀刻方法,其特征在于,所述含金属膜是所述金属元素的单质的膜、包含所述金属元素的合金的膜或包含所述金属元素的化合物的膜中的任一种。
4.根据权利要求1~3中任一项所述的湿式蚀刻方法,其特征在于,所述有机溶剂是选自由一级醇、二级醇、三级醇、苄醇、醚、酯、酮、胺、酰胺、甘醇、甘醇醚和卤代烷烃组成的组中的至少1种有机溶剂。
5.根据权利要求4所述的湿式蚀刻方法,其特征在于,所述有机溶剂是选自由异丙醇、甲醇、乙醇、丙二醇单甲醚乙酸酯(PGMEA)、甲乙酮(MEK)、和丙酮组成的组中的至少1种有机溶剂。
6.根据权利要求1~5中任一项所述的湿式蚀刻方法,其特征在于,所述蚀刻液中所包含的水的量为1质量%以下。
7.根据权利要求1~6中任一项所述的湿式蚀刻方法,其特征在于,所述蚀刻液中的所述β-二酮的浓度为1~80体积%。
8.根据权利要求1~7中任一项所述的湿式蚀刻方法,其特征在于,所述β-二酮是选自由六氟乙酰丙酮、三氟乙酰丙酮、1,1,1,6,6,6-六氟-2,4-己二酮、4,4,4-三氟-1-(2-噻吩基)-1,3-丁二酮、4,4,4-三氟-1-苯基-1,3-丁二酮、1,1,1,5,5,5-六氟-3-甲基-2,4-戊二酮、1,1,1,3,5,5,5-七氟-2,4-戊二酮和1,1,1-三氟-5,5-二甲基-2,4-己二酮组成的组中的至少1种。
9.根据权利要求1~8中任一项所述的湿式蚀刻方法,其特征在于,所述蚀刻液进一步包含过氧化物的添加剂。
10.根据权利要求9所述的湿式蚀刻方法,其特征在于,所述添加剂是选自由过氧化氢、过乙酸、过碳酸钠、过硫酸铵、过硫酸钠、过硫酸钾和过氧硫酸钾组成的组中的至少1种。
11.根据权利要求1~10中任一项所述的湿式蚀刻方法,其特征在于,所述基板的材料为硅系半导体材料或硅酸盐玻璃材料。
12.一种蚀刻液,其特征在于,包含:选自由异丙醇、甲醇、乙醇、丙二醇单甲醚乙酸酯(PGMEA)、甲乙酮(MEK)和丙酮组成的组中的至少1种有机溶剂;及三氟甲基与羰基键合而成的β-二酮。
13.根据权利要求12所述的蚀刻液,其特征在于,所述β-二酮是选自由六氟乙酰丙酮、三氟乙酰丙酮、1,1,1,6,6,6-六氟-2,4-己二酮、4,4,4-三氟-1-(2-噻吩基)-1,3-丁二酮、4,4,4-三氟-1-苯基-1,3-丁二酮、1,1,1,5,5,5-六氟-3-甲基-2,4-戊二酮、1,1,1,3,5,5,5-七氟-2,4-戊二酮和1,1,1-三氟-5,5-二甲基-2,4-己二酮组成的组中的至少1种。
14.根据权利要求12或13所述的蚀刻液,其特征在于,所述蚀刻液中的所述β-二酮的浓度为1~80质量%。
15.根据权利要求12~14中任一项所述的蚀刻液,其中,所述蚀刻液实质上仅由所述有机溶剂和所述β-二酮构成。
16.根据权利要求12~14中任一项所述的蚀刻液,其特征在于,所述蚀刻液进一步包含过氧化物的添加剂,
所述蚀刻液实质上仅由所述有机溶剂、所述β-二酮和所述添加剂构成。
17.一种器件的制造方法,其特征在于,包括如下工序:使用权利要求1所述的湿式蚀刻方法对基板上的含金属膜进行湿式蚀刻。
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TW201504397A (zh) * | 2013-06-06 | 2015-02-01 | Advanced Tech Materials | 選擇性蝕刻氮化鈦之組成物及方法 |
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CN112921320B (zh) | 2023-04-28 |
TWI661089B (zh) | 2019-06-01 |
KR102509446B1 (ko) | 2023-03-14 |
CN112921320A (zh) | 2021-06-08 |
KR20180020273A (ko) | 2018-02-27 |
JP2017028257A (ja) | 2017-02-02 |
TW201708613A (zh) | 2017-03-01 |
CN107533971B (zh) | 2021-01-26 |
KR20230006034A (ko) | 2023-01-10 |
WO2017013988A1 (ja) | 2017-01-26 |
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