CN104733288B - 用于加工半导体器件的方法 - Google Patents

用于加工半导体器件的方法 Download PDF

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Publication number
CN104733288B
CN104733288B CN201410806947.1A CN201410806947A CN104733288B CN 104733288 B CN104733288 B CN 104733288B CN 201410806947 A CN201410806947 A CN 201410806947A CN 104733288 B CN104733288 B CN 104733288B
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passivation layer
metal level
methods described
layer
passivation
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CN104733288A (zh
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W.莱纳特
M.罗加利
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本发明涉及用于加工半导体器件的方法。依据一个实施例，提供用于加工半导体器件的方法，所述方法包含：形成最终金属层；在最终金属层之上形成钝化层；并且结构化钝化层和最终金属层以形成图案化的金属层和图案化的钝化层，其中图案化的金属层包含被图案化的钝化层覆盖的焊盘区。

Description

用于加工半导体器件的方法
技术领域
各种实施例通常涉及用于加工半导体器件的方法。
背景技术
典型地，半导体器件要求最终金属（或金属化）层。为此，金属层比如被沉积在半导体器件的整个表面之上，例如铝层借助于溅射工艺被沉积，被结构化并且被钝化（例如借助于包含借助于化学气相沉积来沉积的氮化物层和等离子体氧化物层的堆叠）。替选地，金属可以被电镀在已经结构化的抗蚀剂掩膜中（例如铜的流电沉积）。
然而，对于半导体器件的最终组装，典型地要求金属层的开口部分（即开口键合焊盘）。借助于使用卤素的刻蚀将钝化层开口典型地导致开口的焊盘的污染，所述开口的焊盘可能在从前端加工进行到后端加工的过程中和在后端加工（例如锯切）期间腐蚀。这可能导致键合质量的高波动。在极端情形下，焊盘可能是不可键合的（NSOP，不粘附在焊盘上的问题）。进一步，腐蚀的焊盘可能降低完成的半导体器件的可靠性。
发明内容
依据一个实施例，提供用于加工半导体器件的方法，所述方法包含：形成最终金属层；在最终金属层之上形成钝化层；并且结构化钝化层和最终金属层以形成图案化的金属层和图案化的钝化层，其中图案化的金属层包含被图案化的钝化层覆盖的焊盘区。
依据另一个实施例，提供用于加工半导体器件的方法，所述方法包含：形成最终金属层；将处于不完全固化的状态的第一钝化层沉积在最终金属层之上；在第一钝化层处于不完全固化的状态时结构化第一钝化层以将最终金属层的部分开口；在第一钝化层处于不完全固化的状态时将第二钝化层沉积在第一钝化层之上以及在最终金属层的部分之上；并且在沉积第二钝化层之后，至少部分地固化第一钝化层。
依据进一步实施例，提供用于加工半导体器件的方法，所述方法包含：形成最终金属层；将第一钝化层沉积在最终金属层之上；部分地使第一钝化层聚合；在第一钝化层处于部分聚合的状态时结构化第一钝化层以将最终金属层的部分开口；在第一钝化层处于部分聚合的状态时将第二钝化层沉积在第一钝化层之上以及在最终金属层的部分之上；并且在沉积第二钝化层之后，使第一钝化层聚合。
附图说明
在附图中，贯穿不同视图，相同的参考字符通常指的是相同的部分。附图不必成比例，而通常将重点放在图解本发明的原理上。在下面的描述中，参考附图描述本发明的各种实施例，在附图中：
图1示出图解依据实施例的用于加工半导体器件的方法的流程图。
图2示出图解依据另一个实施例的用于加工半导体器件的方法的流程图。
图3示出图解依据进一步实施例的用于加工半导体器件的方法的流程图。
图4A到4E示出依据实施例的用于加工半导体器件的方法中的各种阶段。
图5A到5D示出依据实施例的用于加工半导体器件的方法中的各种阶段。
图6示出图解可以在依据各种实施例的用于加工半导体器件的方法中被用来生长包含氧化铝的层的原子层沉积工艺的工艺原理的各种视图。
具体实施方式
下面的详细描述参考附图，所述附图通过图解的方式示出在其中可以实践本发明的特定细节和实施例。这些实施例被足够详细描述以使本领域技术人员能够实践本发明。可以采用其它实施例并且可以进行结构、逻辑、和电气改变而没有脱离本发明的范围。各种实施例不必相互排斥，因为一些实施例能够与一个或多个其它实施例组合以形成新的实施例。各种用于结构或器件的实施例被描述，并且各种用于方法的实施例被描述。可以理解的是连同结构或器件被描述的一个或多个（例如所有的）实施例可以等同地可应用到方法，并且反之亦然。
词“示范性的”在本文中被用来表示“用作示例、实例、或图解”。在本文中描述为“示范性的”任何实施例或设计不必被理解为与其它实施例或设计相比是优选的或有优势的。
在本文中用来描述“在侧或表面之上”形成特征（例如层）的词“在...之上”可以被用来表示特征（例如层）可以“直接地在暗示的侧或表面上”形成，例如与暗示的侧或表面直接接触。在本文中用来描述“在侧或表面之上”形成特征（例如层）的词“在...之上”可以被用来表示特征（例如层）可以“间接地在暗示的侧或表面上”形成，其中一个或多个额外的层被布置在暗示的侧或表面和形成的层之间。
在一个或多个实施例中，术语“最终金属层”可以包含（比如包含半导体器件的晶片或芯片的）半导体器件的最终金属化级（例如顶金属化级）的金属层。
最终金属层可以使用比如借助于原子层沉积（ALD）来沉积的诸如Al2O3的电介质材料被钝化。在该方法中，电介质材料可以被沉积在整个金属层之上（称为在内部ALD）或在包含聚酰亚胺层和一个或多个开口焊盘的最终晶片表面之上（称为在顶上ALD）。该方法可以在制造工艺中被容易地实施。进一步，该方法要求低成本，其不要求额外的结构化。然而，用该方法，额外的界面分别形成在金属化层和钝化层、钝化层和聚酰亚胺层、以及聚酰亚胺层和成型化合物之间。这导致增加的结构复杂性并且可能在最坏的情形下在各种界面处导致问题。
鉴于以上，依据各种实施例，提供可以被看成生成自对准的焊盘保护的用于加工半导体器件的方法。这样的方法在下面被描述。
图1示出图解依据实施例的用于加工半导体器件的方法的流程图100。
在101中，形成最终金属层。
在102中，在最终金属层之上形成钝化层。
在103中，钝化层和最终金属层被结构化以形成图案化的金属层和图案化的钝化层，其中图案化的金属层包含被图案化的钝化层覆盖的焊盘区。
依据一个实施例，换句话说，沉积在最终金属层（金属化层）上的钝化层与半导体器件的最终金属层一起被结构化（即比如使用相同的掩膜）。比如在结构化最终金属层之前使用ALD沉积钝化层以覆盖整个最终金属层（例如铝金属层）。钝化层和金属层随后例如通过使用图案化的抗蚀剂作为刻蚀掩膜来刻蚀而被结构化。在最终金属层和抗蚀剂之间具有钝化层的部分在刻蚀之后导致自对准的焊盘保护。也就是说，钝化层在金属层也被去除的区中被去除。然而，钝化层保留在金属层不被去除（例如金属层不被去除以形成键合焊盘）的区中。
钝化层比如包含金属氧化物。
比如金属氧化物是与最终金属层的材料的自然氧化物（native oxide）不同的氧化物。
钝化层比如包含氧化铝。
依据一个实施例，钝化层借助于原子层沉积（ALD）工艺在最终金属层之上形成。对ALD层可替选地，在各种实施例中，包含SiO2、TiO2、一个或多个无机材料和其组合的层可以被使用。钝化层也可以被掺杂。
原子层沉积工艺比如包含铝前体（包含三甲基铝）。
依据一个实施例，原子层沉积工艺包含来自下面氧化前体组的至少一个氧化前体，该氧化前体组由下述组成：水、醇、异丙醇、乙醇和甲醇。
钝化层比如形成在最终金属层的整个表面之上，例如在包含半导体器件的整个晶片之上。
依据一个实施例，结构化钝化层和最终金属层包含：形成掩膜；图案化掩膜；并且使用图案化的掩膜刻蚀钝化层和金属层。
掩膜比如包含刻蚀抗蚀剂。
掩膜比如覆盖焊盘区。
依据一个实施例，刻蚀钝化层和金属层包含干法刻蚀或湿法刻蚀钝化层和金属层。
依据一个实施例，最终金属层包含来自下面金属组的至少一个金属，该金属组由下述组成：铜、银、钯、钨、铝和锡。
依据一个实施例，最终金属层可以在半导体器件的前侧处（例如在包含半导体器件的晶片或芯片的前侧处）形成。依据另一个实施例，最终金属层可以在半导体器件的背侧处（例如在包含半导体器件的晶片或芯片的背侧处）形成。
最终金属层比如形成在半导体器件的整个表面之上，例如在晶片或芯片的整个表面之上，例如在晶片或芯片的整个前侧或背侧之上。
图2示出图解依据另一个实施例的用于加工半导体器件的方法的流程图200。
在201中，形成最终金属层。
在202中，将处于不完全固化的状态的第一钝化层沉积在最终金属层之上。
在203中，在第一钝化层处于不完全固化的状态时结构化第一钝化层以将最终金属层的部分开口。
在204中，在第一钝化层处于不完全固化的状态时将第二钝化层沉积在第一钝化层之上以及在最终金属层的部分之上。
在205中，在沉积第二钝化层之后，至少部分地固化第一钝化层。
依据一个实施例，换句话说，第一钝化层（例如通过旋涂）被形成在最终金属层上并且只被预固化（即不完全固化，例如软烘），换句话说被部分地固化，例如被部分地聚合。这可以比如表示第一钝化层被大部分地固化，例如被固化到90%或更多、95%或更多、或99%或更多。第一钝化层被结构化并且第二钝化层随后在结构化的第一钝化层上形成以使得第二钝化层覆盖第一钝化层在结构化之后存在的区域和第一钝化层在结构化之后不存在的区域，以使得第二钝化在这些区域中直接覆盖金属层。通过进一步固化（例如全部地固化或至少进一步部分地固化）第一钝化层，第二钝化层可以在第一钝化层在结构化之后存在的区域（即第二钝化层覆盖第一钝化层的区域）中被去除。
第二钝化层比如在结构化的第一钝化层上在低于第一钝化层的固化温度的温度形成。
比如，结构化的第一钝化层是结构化的有机前体（例如光敏聚酰亚胺）并且第二钝化层借助于原子层沉积被沉积。第二钝化层在第一钝化层被预聚合时形成。比如，聚酰亚胺通过例如在300℃和400℃之间或250℃到400℃硬烘达200s到400s的时段例如300s而被加工。在第二钝化层的沉积（例如以覆盖整个晶片）之后，第一钝化层被最终交联，即至少基本上全部地固化。由于在固化期间第一钝化层的典型地大规模收缩，在第一钝化层上的第二钝化层被去除同时第二钝化层保留在其被直接沉积在金属层上的区域中。
依据一个实施例，在第一钝化层的固化期间第一钝化层收缩并且沉积在第一钝化层上的第二钝化层的部分与第一钝化层分离或沉入第一钝化层中。
第一钝化层比如包含有机前体。
比如第一钝化层包含酰亚胺。
依据一个实施例，第一钝化层包含光敏聚酰亚胺。
至少部分地固化第一钝化层可以比如包含将第一钝化固化到比不完全固化的状态更完全固化的状态。
至少部分地固化第一钝化层比如包含硬烘第一钝化层。
至少部分地固化第一钝化层比如包含使第一钝化层聚合。
第二钝化层比如包含金属氧化物。
金属氧化物比如是与最终金属层的材料的自然氧化物不同的氧化物。
比如第二钝化层包含氧化铝。
第二钝化层比如借助于原子层沉积工艺被沉积。
原子层沉积工艺可以包含铝前体（包含三甲基铝）。
依据一个实施例，原子层沉积工艺包含来自下面氧化前体组的至少一个氧化前体，该氧化前体组由下述组成：水、醇、异丙醇、乙醇和甲醇。
依据一个实施例，第二钝化层形成在金属层的部分和第一钝化层的整个表面之上，例如在包含半导体器件的整个晶片之上。
结构化第一钝化层比如包含：形成掩膜；图案化掩膜；并且使用图案化的掩膜刻蚀第一钝化层。
掩膜比如包含刻蚀抗蚀剂。
刻蚀第一钝化层比如包含干法刻蚀或湿法刻蚀第一钝化层。
依据一个实施例，最终金属层包含来自下面金属组的至少一个金属，该金属组由下述组成：铜、银、钯、银、钨、铝和锡。
依据一个实施例，最终金属层可以在半导体器件的前侧处（例如在包含半导体器件的晶片或芯片的前侧处）形成。依据另一个实施例，最终金属层可以在半导体器件的背侧处（例如在包含半导体器件的晶片或芯片的背侧处）形成。
最终金属层比如形成在半导体器件的整个表面之上，例如在晶片或芯片的整个表面之上，例如在晶片或芯片的整个前侧或背侧之上。
图3示出图解依据进一步实施例的用于加工半导体器件的方法的流程图300。
流程图300图解用于加工半导体器件的方法。
在301中，形成最终金属层。
在302中，将第一钝化层形成在最终金属层之上。
在303中，部分地使第一钝化层聚合。
在304中，在第一钝化层处于部分聚合的状态时结构化第一钝化层以将最终金属层的部分开口。
在305中，在第一钝化层处于部分聚合的状态时将第二钝化层沉积在第一钝化层之上以及在最终金属层的部分之上。
在306中，在沉积第二钝化层之后，使第一钝化层聚合。
应该指出的是，在可应用的情况下，在图1中图解的方法的语境中所描述的实施例对于在图2和3中图解的方法是类似有效的，并且反之亦然。
在下面，用于图1到3的方法的示例被更详细地描述。
图4A到4E示出依据实施例的用于加工半导体器件的方法中的各种阶段。
如在图4A到4E中图解的加工方法能够被看作用于参考图1所描述的方法的示例。
如在图4A中示出，在衬底401上提供钝化层402。衬底401可以包含各种掺杂或不掺杂的半导体区、绝缘区、金属层等以形成一个或多个半导体器件部件（例如晶体管等）。钝化层402比如包含绝缘材料（比如包含由氮化硅、氧化硅、或两者的各种组合组成的堆叠）。在钝化层402上形成最终金属层403。金属层403比如包含例如使用物理气相沉积（PVD）来沉积的铝或铜。
如在图4B中示出，可以被看成对应于参考图1所描述的钝化层的ALD（钝化）层404借助于ALD被沉积，例如Al2O3层。
ALD钝化层404随后与金属层403一起被结构化。为此，如在图4C中图解，抗蚀剂层405在ALD钝化层404上形成，并且抗蚀剂层405如在图4D中示出的那样被图案化以在ALD钝化层404之上形成刻蚀掩膜405。
随后使用刻蚀掩膜405执行湿法刻蚀工艺，所述湿法刻蚀工艺使用能够刻蚀金属层403以及ALD钝化层404的材料的刻蚀剂（例如0.1% HF）。在金属和金属氧化物（在该示例中Al和Al2O3）之间刻蚀速率的不同（例如超过10的因子）导致ALD钝化层在抗蚀剂被开口的所有区域中和在铝的侧壁处的全部去除。因为ALD层404在（结构化的）金属层403的侧壁上和在钝化层402的开口的区域上不存在，所以不创建额外的界面。在钝化层402的开口的区域上方在金属层403中由刻蚀生成的孔可以比如形成通孔，所述通孔用额外的（例如最终）钝化层（例如氧化物、氮化物或模制物）填充。
在图4E中图解刻蚀的结果。在金属层403和抗蚀剂405之间ALD钝化层404的底切典型地可忽略（典型地近似5um）。
可以形成最终钝化层（例如包含酰亚胺），所述最终钝化层比如只在要被用于键合的区域诸如键合焊盘区406（其比如不与金属层403的剩余部分不同）中被开口。在这样的区域中，ALD层仍存在并且最终钝化层的开口在ALD层404处停止。因而开口的区域（例如键合焊盘区406）被保护以防腐蚀。比如金属层403被ALD层404的纯（没有氟）氧化铝保护并且因而被很好保护以防腐蚀。因为只有要被用于键合的区域和金属层403的覆盖的区域具有保护的ALD层404（例如Al2O3层），所以避免在最终钝化层（在ALD层404和金属层403上）之间的附着或经由ALD层404在金属层403的金属线之间的可能泄露电流路径的问题。
可以通过穿透比如ALD层404的氧化铝的薄层（比如大约5nm到大约10nm）来完成到键合焊盘区406的键合。
因为金属层403被ALD层404很好保护免于外部环境，所以半导体器件可以从前端加工设施被输送到后端加工设施而没有将金属层暴露到氧化和污染并且在后端加工（例如锯切）期间被保护免于腐蚀和污染。
图5A到5D示出依据实施例的用于加工半导体器件的方法中的各种阶段。
如在图5A到5D中图解的加工方法能够被看作用于参考图2或3分别描述的方法的示例。
如在图5A中示出，在衬底501上提供钝化层502。衬底501可以包含各种掺杂或不掺杂的区、绝缘区、金属层等以形成一个或多个半导体器件部件（例如晶体管等）。钝化层502比如包含绝缘材料（比如包含由氮化硅、氧化硅、或两者的各种组合组成的堆叠）。在钝化层502上形成最终金属层503。金属层503比如包含例如使用物理气相沉积（PVD）来沉积的铝或铜。
如在图5B中示出，聚酰亚胺层504随后在金属层503之上（比如在金属层503上）形成。应该指出的是在金属层503和聚酰亚胺层504之间可以形成一个或多个额外的层，例如诸如氮化硅的氮化层。聚酰亚胺层504（例如通过硬烘）被预固化，即部分地固化，换句话说预聚合。聚酰亚胺层504随后被结构化（例如使用光刻）并且ALD（钝化）层505被沉积在如在图5C中示出的结构化的聚酰亚胺层504上。ALD层505在低于聚酰亚胺层504的固化温度的温度（例如在100℃和200℃之间）被沉积。它具有比如5nm到10nm的厚度。
随后聚酰亚胺层504被进一步（例如全部地）固化。因为在该工艺中，如在图5D中示出，聚酰亚胺层504收缩（例如收缩到它的原有厚度（例如10nm到40nm）的近似40%、例如收缩到5um到20um的厚度），ALD层505与聚酰亚胺分离并且只保留在其在金属层503上形成的区域中。因而，用于键合的区域（诸如键合焊盘区506）被ALD层505保护。
图6示出图解可以在依据各种实施例的用于加工半导体器件的方法中被用来在金属层（诸如金属层403）之上生长包含氧化铝的层（例如氧化铝层，诸如层404）的原子层沉积工艺的工艺原理的各种视图。在下面的描述中，假设金属层403包含铜或由铜组成，然而金属层403依据其它实施例可以包含其它金属或金属合金，诸如铝。
视图610到670示出在ALD生长包含氧化铝的层404中初始反应循环的图解，其中可以实现原位Cu氧化物还原和通过包含氧化铝的层404的钝化。
在示例中，包含氧化铝的层404（即用于金属层403的铜的保护层）可以在金属层403的最终调节之后（例如在铜的结晶化和/或回火工艺之后）被施加和/或被沉积。在包含氧化铝的层404的沉积前的退火工艺可以导致期望的最终金属化的结晶化。
合成气体例如氮气和氢气的混合物可以将在金属层403中形成的任何氧化铜还原到铜。虽然由于各种原因，例如甚至在合成气体的使用之后，但是薄的自然氧化物652（例如氧化铜）可能仍存在于表面（例如金属层403的顶侧）上。氧化前体（诸如水和/或醇，例如异丙醇或乙醇或甲醇）可以在金属层403的表面上被引入（在视图610中）。
在视图620中，铝ALD前体654可以在金属层403之上被引入。该铝前体654典型地可以是三甲基铝（Al（CH3）3）（TMA）。
如在视图620中示出，铝ALD前体654（这里：TMA）可以能够在ALD生长氧化铝的初始阶段还原自然氧化物652。如在620中示出，TMA 654可以在氧化的金属焊盘表面处经由代替TMA 654的Al-CH3键的Al-O-Cu键被化学吸附，直到发生具有化学吸附的TMA 656的表面饱和，如在视图630中示出。过量的CH3基658以及过量的TMA 654可以用惰性气体清洗，如在视图640中示出。
在视图650中，氧化前体，例如水662（如在视图650中示出）和/或醇（例如异丙醇（IPA），在视图650中未被示出），可以被引入以将化学吸附的TMA 654的甲基用OH基代替并且在相邻的化学吸附的TMA 654分子之间形成Al-O-Al键。水和/或醇的化学吸附可以发生直到表面饱和，如在视图660中示出。
用惰性气体的清洗可以在视图670中被执行以去除过量的甲基664和水662（和/或醇）。在视图670中示出的表面结构随后可以用作用于进一步ALD反应循环的开始表面。在用于沉积氧化铝层404的ALD的使用期间，由于TMA的还原效应，氧化铜可以不被形成或不被创建。此外，因为TMA还原氧化铜，包含氧化铝的层404因此可以被直接形成和/或沉积到铜表面上。
典型的工艺温度可以处在宽的温度窗口内，例如从大约室温变化到大约450℃，例如在大约80℃到大约400℃之间，其可以与Cu完全兼容。在铜可能特别易受腐蚀（例如被水腐蚀）的情形下，沉积可以用TMA和醇（例如异丙醇）而不是水来执行。
可以理解的是将包含氧化铝的层404安置在金属层403之上可以包含在金属层403的表面处形成化学反应以使得铜的氧化物从金属层403被去除。
将包含氧化铝的层404安置在金属层403之上可以包含将包含氧化铝的层404安置在金属层403之上以使得包含氧化铝的层404阻止铜的氧化物在金属层403的表面处的形成。
将包含氧化铝的层404安置在金属层403之上可以包含将包含氧化铝的层404安置在金属层403之上，其中包含氧化铝的层404可以阻止铜结构从金属层403的生长。依据一些实施例，原子层沉积工艺可以包含铝前体（典型地三甲基铝（TMA））和氧化前体（典型地水或氧气和/或臭氧）。依据其它实施例，氧化铝的原子层沉积工艺可以包含作为氧化前体的醇（例如异丙醇）。
（如依据视图610到670图解的）循环可以被重复直到可以获得包含氧化铝的层404的期望的厚度。
各种实施例为铜提供包含氧化铝的保护层。氧化铝层404（例如无定形氧化铝）可以针对环境影响（例如加热）是稳定的并且针对潮湿是足够密封的。即使加热高达300℃，包含氧化铝的层404可以在铜焊盘403之上保持稳定而没有退化。此外，可以阻止氧化铜的形成。
包含氧化铝的层404可以使用ALD来沉积，由此在金属结构（例如金属层403）之上产生优异的共形涂层。包含氧化铝的层404可以提供针对氧化的优异的铜保护。此外，使用ALD沉积包含氧化铝的层404可以在铝前体的第一循环期间去除初始金属氧化物层（例如氧化铜）。包含氧化铝的层404可以提供针对电化学的优异的保护并且因此没有枝晶生长。包含氧化铝的层404只使用非常薄的氧化铝层（比如大约5nm）或使用例如批量工艺（比如通过在垂直炉中的沉积）可以提供优异的拥有成本（CoO），表示沉积可以是便宜的。包含氧化铝的层404也可以被用来保护其它金属表面并且可以被沉积在几乎每个材料上。
尽管参考特定实施例已特别地示出并且描述了本发明，但是本领域的那些技术人员应该理解的是，可以在其中进行形式和细节上的各种改变而没有脱离如所附权利要求定义的本发明的精神和范围。本发明的范围因而被所附权利要求指示，并且因此意欲涵盖在权利要求的等价物的含义和范围之内的所有改变。

Claims (26)

1.一种用于加工半导体器件的方法，包括：
形成最终金属层；
在最终金属层之上形成钝化层；
一起结构化钝化层和最终金属层以形成图案化的金属层和图案化的钝化层，其中图案化的金属层包含被图案化的钝化层覆盖的焊盘区。
2.依据权利要求1的所述方法，其中钝化层包括金属氧化物。
3.依据权利要求2的所述方法，其中金属氧化物是与最终金属层的材料的自然氧化物不同的氧化物。
4.依据权利要求1的所述方法，其中钝化层包括氧化铝。
5.依据权利要求1的所述方法，其中钝化层借助于原子层沉积工艺形成在最终金属层之上。
6.依据权利要求5的所述方法，其中原子层沉积工艺包括铝前体，所述铝前体包括三甲基铝。
7.依据权利要求5的所述方法，其中原子层沉积工艺包括来自下面氧化前体组的至少一个氧化前体，该氧化前体组由水和醇组成。
8.依据权利要求7的所述方法，其中所述醇包括异丙醇、乙醇和甲醇。
9.依据权利要求1的所述方法，其中钝化层在最终金属层的整个表面之上形成。
10.依据权利要求1的所述方法，其中结构化钝化层和最终金属层包括：形成掩膜，图案化掩膜，并且使用图案化的掩膜刻蚀钝化层和金属层。
11.依据权利要求10的所述方法，其中掩膜包括刻蚀抗蚀剂。
12.依据权利要求10的所述方法，其中掩膜覆盖焊盘区。
13.依据权利要求1的所述方法，其中刻蚀钝化层和金属层包括干法刻蚀或湿法刻蚀钝化层和金属层。
14.依据权利要求1的所述方法，其中最终金属层包括来自下面金属组的至少一个金属，该金属组由铜、银、钯、钨、铝和锡组成。
15.一种用于加工半导体器件的方法，包括：
形成最终金属层；
将处于不完全固化的状态的第一钝化层沉积在最终金属层之上；
在第一钝化层处于不完全固化的状态时结构化第一钝化层以将最终金属层的部分开口；
在第一钝化层处于不完全固化的状态时将第二钝化层沉积在第一钝化层之上以及在最终金属层的所述部分之上；并且
在沉积第二钝化层之后，至少部分地固化第一钝化层。
16.依据权利要求15的所述方法，其中在第一钝化层的固化期间第一钝化层收缩，并且沉积在第一钝化层上的第二钝化层的部分与第一钝化层分离或沉入第一钝化层中。
17.依据权利要求15的所述方法，其中第一钝化层包含有机前体。
18.依据权利要求15的所述方法，其中第一钝化层包含酰亚胺。
19.依据权利要求15的所述方法，其中第一钝化层包含光敏聚酰亚胺。
20.依据权利要求15的所述方法，其中至少部分地固化第一钝化层包含将第一钝化固化到比不完全固化的状态更完全固化的状态。
21.依据权利要求15的所述方法，其中至少部分地固化第一钝化层包含硬烘第一钝化层。
22.依据权利要求15的所述方法，其中至少部分地固化第一钝化包含使第一钝化层聚合。
23.依据权利要求15的所述方法，其中第二钝化层包含金属氧化物。
24.依据权利要求15的所述方法，其中第二钝化层借助于原子层沉积工艺被沉积。
25.依据权利要求15的所述方法，其中第二钝化层形成在金属层的所述部分和第一钝化层的整个表面之上。
26.一种用于加工半导体器件的方法，包括：
形成最终金属层；
将第一钝化层沉积在最终金属层之上；
部分地使第一钝化层聚合；
在第一钝化层处于部分聚合的状态时结构化第一钝化层以将最终金属层的部分开口；
在第一钝化层处于部分聚合的状态时将第二钝化层沉积在第一钝化层之上以及在最终金属层的所述部分之上；并且
在沉积第二钝化层之后，使第一钝化层聚合。
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