CN1075246C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

Info

Publication number
CN1075246C
CN1075246C CN96123937A CN96123937A CN1075246C CN 1075246 C CN1075246 C CN 1075246C CN 96123937 A CN96123937 A CN 96123937A CN 96123937 A CN96123937 A CN 96123937A CN 1075246 C CN1075246 C CN 1075246C
Authority
CN
China
Prior art keywords
film
silicon layer
oxide
conducting shell
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN96123937A
Other languages
English (en)
Chinese (zh)
Other versions
CN1160293A (zh
Inventor
金载甲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MagnaChip Semiconductor Ltd
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of CN1160293A publication Critical patent/CN1160293A/zh
Application granted granted Critical
Publication of CN1075246C publication Critical patent/CN1075246C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
CN96123937A 1995-12-30 1996-12-30 半导体器件及其制造方法 Expired - Fee Related CN1075246C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR69461/95 1995-12-30
KR1019950069461A KR970052023A (ko) 1995-12-30 1995-12-30 에스 오 아이 소자 및 그의 제조방법
KR69461/1995 1995-12-30

Publications (2)

Publication Number Publication Date
CN1160293A CN1160293A (zh) 1997-09-24
CN1075246C true CN1075246C (zh) 2001-11-21

Family

ID=19448459

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96123937A Expired - Fee Related CN1075246C (zh) 1995-12-30 1996-12-30 半导体器件及其制造方法

Country Status (6)

Country Link
JP (1) JPH1074921A (ko)
KR (1) KR970052023A (ko)
CN (1) CN1075246C (ko)
DE (1) DE19654280B4 (ko)
GB (1) GB2309825B (ko)
TW (1) TW312854B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9215962B2 (en) 2014-03-13 2015-12-22 Ecovacs Robotics, Inc. Autonomous planar surface cleaning robot

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100281109B1 (ko) * 1997-12-15 2001-03-02 김영환 에스오아이(soi)소자및그의제조방법
DE69925078T2 (de) 1998-08-29 2006-03-09 International Business Machines Corp. SOI-Transistor mit einem Substrat-Kontakt und Verfahren zu dessen Herstellung
EP0989613B1 (en) * 1998-08-29 2005-05-04 International Business Machines Corporation SOI transistor with body contact and method of forming same
KR100318463B1 (ko) * 1998-10-28 2002-02-19 박종섭 몸체접촉실리콘이중막소자제조방법
TW476993B (en) * 2000-01-19 2002-02-21 Advanced Micro Devices Inc Silicon on insulator circuit structure with buried semiconductor interconnect structure and method for forming same
US6368903B1 (en) * 2000-03-17 2002-04-09 International Business Machines Corporation SOI low capacitance body contact
JP2003100907A (ja) 2001-09-26 2003-04-04 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
JP5567247B2 (ja) * 2006-02-07 2014-08-06 セイコーインスツル株式会社 半導体装置およびその製造方法
CN101621009B (zh) * 2008-07-02 2012-03-21 中国科学院微电子研究所 一种制作部分耗尽soi器件体接触结构的方法
US9496227B2 (en) 2009-07-15 2016-11-15 Qualcomm Incorporated Semiconductor-on-insulator with back side support layer
US9390974B2 (en) 2012-12-21 2016-07-12 Qualcomm Incorporated Back-to-back stacked integrated circuit assembly and method of making
US9034732B2 (en) 2009-07-15 2015-05-19 Silanna Semiconductor U.S.A., Inc. Semiconductor-on-insulator with back side support layer
US8232597B2 (en) 2009-07-15 2012-07-31 Io Semiconductor, Inc. Semiconductor-on-insulator with back side connection
US8912646B2 (en) 2009-07-15 2014-12-16 Silanna Semiconductor U.S.A., Inc. Integrated circuit assembly and method of making
TWI538173B (zh) 2009-07-15 2016-06-11 瑟藍納半導體美國股份有限公司 具背側散熱能力之絕緣體上半導體結構、自絕緣體上半導體元件進行散熱之方法及製造具有絕緣體上半導體晶圓之積體電路之方法
US9466719B2 (en) 2009-07-15 2016-10-11 Qualcomm Incorporated Semiconductor-on-insulator with back side strain topology
CN102683417A (zh) * 2012-05-17 2012-09-19 中国科学院微电子研究所 Soi mos晶体管
KR20140047494A (ko) * 2012-10-12 2014-04-22 삼성전자주식회사 서브픽셀, 이를 포함하는 이미지 센서, 및 이미지 센싱 시스템
US9515181B2 (en) 2014-08-06 2016-12-06 Qualcomm Incorporated Semiconductor device with self-aligned back side features

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0562127A1 (en) * 1991-10-14 1993-09-29 Nippondenso Co., Ltd. Method for fabrication of semiconductor device
US5434444A (en) * 1987-02-26 1995-07-18 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3921038C2 (de) * 1988-06-28 1998-12-10 Ricoh Kk Verfahren zur Herstellung eines Halbleitersubstrats bzw. Festkörperaufbaus
JP2547663B2 (ja) * 1990-10-03 1996-10-23 三菱電機株式会社 半導体装置
KR100267755B1 (ko) * 1993-03-18 2000-10-16 김영환 박막트랜지스터 제조방법
JPH08162642A (ja) * 1994-12-07 1996-06-21 Nippondenso Co Ltd 半導体装置およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434444A (en) * 1987-02-26 1995-07-18 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
EP0562127A1 (en) * 1991-10-14 1993-09-29 Nippondenso Co., Ltd. Method for fabrication of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9215962B2 (en) 2014-03-13 2015-12-22 Ecovacs Robotics, Inc. Autonomous planar surface cleaning robot
US10188254B2 (en) 2014-03-13 2019-01-29 Ecovacs Robotics, Inc. Autonomous planar surface cleaning robot
US10258215B2 (en) 2014-03-13 2019-04-16 Ecovacs Robotics, Inc Autonomous planar surface cleaning robot
US11324377B2 (en) 2014-03-13 2022-05-10 Ecovacs Robotics, Inc. Autonomous planar surface cleaning robot

Also Published As

Publication number Publication date
GB2309825B (en) 2000-07-05
GB2309825A (en) 1997-08-06
JPH1074921A (ja) 1998-03-17
GB9626979D0 (en) 1997-02-12
DE19654280A1 (de) 1997-07-03
DE19654280B4 (de) 2005-11-10
KR970052023A (ko) 1997-07-29
CN1160293A (zh) 1997-09-24
TW312854B (ko) 1997-08-11

Similar Documents

Publication Publication Date Title
CN1075246C (zh) 半导体器件及其制造方法
KR100290787B1 (ko) 반도체 메모리 소자의 제조방법
KR100189966B1 (ko) 소이 구조의 모스 트랜지스터 및 그 제조방법
KR890004469B1 (ko) 종형 mosfet와 그 제조방법
US6437405B2 (en) Silicon-on-insulator (SOI) substrate, method for fabricating SOI substrate and SOI MOSFET using the SOI substrate
KR100297173B1 (ko) 반도체장치및그제조방법
US20070111423A1 (en) Method of fabricating semiconductor device
CN101017851B (zh) 半导体器件及其制造方法
US4864377A (en) Silicon on insulator (SOI) semiconductor device
KR100368083B1 (ko) 수직 채널 전계 효과 트랜지스터 및 그 제조 방법
US4536947A (en) CMOS process for fabricating integrated circuits, particularly dynamic memory cells with storage capacitors
GB2318685A (en) MOS gated device with self aligned cells
KR100526366B1 (ko) 반도체 장치와 그 제조 방법
KR20030050995A (ko) 고집적 트랜지스터의 제조 방법
JP3060976B2 (ja) Ｍｏｓｆｅｔおよびその製造方法
KR0128339B1 (ko) Cmos 기술을 이용하는 바이폴라 트랜지스터 제조방법
US20010000074A1 (en) Thin film transistor and method of manufacturing the same
KR100457726B1 (ko) Cmos회로를갖춘집적회로및cmos회로의절연된활성영역을제조하기위한방법
CN112054061B (zh) 一种部分耗尽绝缘体上硅的体接触结构及其制作方法
US20090065858A1 (en) Dmos transistor and fabrication method thereof
KR20040071742A (ko) 전기적으로 프로그램된 ｍｏｓ 트랜지스터 소스/드레인직렬 저항
KR0155840B1 (ko) 모스 트랜지스터 및 그 제조방법
CN1118101C (zh) 具有绝缘栅极的半导体器件及其制造方法
US5929484A (en) High voltage semiconductor device
JP3312683B2 (ja) Ｍｏｓ型半導体装置とその製造方法

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: HYNIX SEMICONDUCTOR INC.

Free format text: FORMER NAME OR ADDRESS: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: Gyeonggi Do, South Korea

Patentee after: Hairyoksa Semiconductor Co., Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Hyundai Electronics Industries Co., Ltd.

ASS Succession or assignment of patent right

Owner name: MAGNACHIP CO., LTD.

Free format text: FORMER OWNER: HYNIX SEMICONDUCTOR INC.

Effective date: 20070601

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20070601

Address after: North Chungcheong Province

Patentee after: Magnachip Semiconductor Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Hairyoksa Semiconductor Co., Ltd.

C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee