TW476993B - Silicon on insulator circuit structure with buried semiconductor interconnect structure and method for forming same - Google Patents

Silicon on insulator circuit structure with buried semiconductor interconnect structure and method for forming same Download PDF

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Publication number
TW476993B
TW476993B TW89126335A TW89126335A TW476993B TW 476993 B TW476993 B TW 476993B TW 89126335 A TW89126335 A TW 89126335A TW 89126335 A TW89126335 A TW 89126335A TW 476993 B TW476993 B TW 476993B
Authority
TW
Taiwan
Prior art keywords
substrate
silicon
insulator
interconnect structure
method
Prior art date
Application number
TW89126335A
Inventor
Matthew S Buynoski
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US48708300A priority Critical
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of TW476993B publication Critical patent/TW476993B/en

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003Characterised by the substrate
    • H01L21/2007Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642Isolation within the component, i.e. internal isolation
    • H01L29/0649Dielectric regions, e.g. SiO2 regions, air gaps

Abstract

A silicon on insulator (SOI) substrate is formed with a base substrate, a buried oxide layer over the base substrate, and a thin silicon device layer over the buried oxide layer. A buried semiconductor interconnect structure is embedded in the buried oxide layer for providing high resistance semiconductor coupling between various devices fabricated in the silicon device layer. A method for forming an SOI substrate with a buried semiconductor interconnect structure includes forming the structure as a protrusion on the face of a first substrate and filling the non-protruding regions with an insulator to create a smooth face. The substrate is fused face down on a second substrate to form the silicon on insulator substrate.
TW89126335A 2000-01-19 2000-12-11 Silicon on insulator circuit structure with buried semiconductor interconnect structure and method for forming same TW476993B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US48708300A true 2000-01-19 2000-01-19

Publications (1)

Publication Number Publication Date
TW476993B true TW476993B (en) 2002-02-21

Family

ID=23934336

Family Applications (1)

Application Number Title Priority Date Filing Date
TW89126335A TW476993B (en) 2000-01-19 2000-12-11 Silicon on insulator circuit structure with buried semiconductor interconnect structure and method for forming same

Country Status (2)

Country Link
TW (1) TW476993B (en)
WO (1) WO2001054174A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2847077B1 (en) * 2002-11-12 2006-02-17 Soitec Silicon On Insulator Semiconductor components, including self mixed type, and method of realization
AU2003294783A1 (en) 2002-11-12 2004-06-03 S.O.I. Tec Silicon On Insulator Technologies Semiconductor structure, and methods for fabricating same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW312854B (en) * 1995-12-30 1997-08-11 Hyundai Electronics Ind
KR0176202B1 (en) * 1996-04-09 1999-04-15 김광호 Soi transistor and its fabrication method
KR100200703B1 (en) * 1996-06-07 1999-06-15 윤종용 Silicon-on-insulator device and method of manufacturing the same
US6020222A (en) * 1997-12-16 2000-02-01 Advanced Micro Devices, Inc. Silicon oxide insulator (SOI) semiconductor having selectively linked body
KR100562539B1 (en) * 1997-12-19 2006-03-22 어드밴스드 마이크로 디바이시즈, 인코포레이티드 Silicon-on-insulator configuration which is compatible with bulk cmos architecture
US6100564A (en) * 1998-09-30 2000-08-08 International Business Machines Corporation SOI pass-gate disturb solution

Also Published As

Publication number Publication date
WO2001054174A1 (en) 2001-07-26

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