CN101621009B - 一种制作部分耗尽soi器件体接触结构的方法 - Google Patents
一种制作部分耗尽soi器件体接触结构的方法 Download PDFInfo
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- CN101621009B CN101621009B CN2008101160430A CN200810116043A CN101621009B CN 101621009 B CN101621009 B CN 101621009B CN 2008101160430 A CN2008101160430 A CN 2008101160430A CN 200810116043 A CN200810116043 A CN 200810116043A CN 101621009 B CN101621009 B CN 101621009B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 38
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000012212 insulator Substances 0.000 title claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000005260 corrosion Methods 0.000 claims abstract description 20
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- 229910021332 silicide Inorganic materials 0.000 claims abstract description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000002513 implantation Methods 0.000 abstract 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2008101160430A CN101621009B (zh) | 2008-07-02 | 2008-07-02 | 一种制作部分耗尽soi器件体接触结构的方法 |
Applications Claiming Priority (1)
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CN2008101160430A CN101621009B (zh) | 2008-07-02 | 2008-07-02 | 一种制作部分耗尽soi器件体接触结构的方法 |
Publications (2)
Publication Number | Publication Date |
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CN101621009A CN101621009A (zh) | 2010-01-06 |
CN101621009B true CN101621009B (zh) | 2012-03-21 |
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CN2008101160430A Active CN101621009B (zh) | 2008-07-02 | 2008-07-02 | 一种制作部分耗尽soi器件体接触结构的方法 |
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CN (1) | CN101621009B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102569359B (zh) * | 2010-12-08 | 2015-07-29 | 四川长虹电器股份有限公司 | 部分soi横向双扩散器件 |
CN102347367B (zh) * | 2011-11-03 | 2014-07-02 | 中国电子科技集团公司第五十八研究所 | 一种基于部分耗尽型soi工艺的抗辐射mos器件结构 |
CN102683417A (zh) * | 2012-05-17 | 2012-09-19 | 中国科学院微电子研究所 | Soi mos晶体管 |
CN102709296B (zh) * | 2012-06-11 | 2014-12-03 | 中国电子科技集团公司第五十八研究所 | 通过负电荷泵在背栅接负电压的soi/mos器件结构及制造方法 |
CN102916047B (zh) * | 2012-10-23 | 2015-09-30 | 哈尔滨工程大学 | 一种利用埋氧腐蚀技术的soi体接触结构及形成方法 |
CN106298526B (zh) * | 2015-06-01 | 2019-05-28 | 中芯国际集成电路制造(上海)有限公司 | 准绝缘体上硅场效应晶体管器件的制作方法 |
CN112054061B (zh) * | 2020-08-25 | 2024-04-05 | 中国科学院微电子研究所 | 一种部分耗尽绝缘体上硅的体接触结构及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1160293A (zh) * | 1995-12-30 | 1997-09-24 | 现代电子产业株式会社 | 半导体器件及其制造方法 |
US20020089031A1 (en) * | 2001-01-08 | 2002-07-11 | Chartered Semiconductor Manufacturing Ltd. | Novel method of body contact for SOI mosfet |
CN1564323A (zh) * | 2004-03-26 | 2005-01-12 | 中国科学院上海微系统与信息技术研究所 | 双埋层结构的绝缘体上的硅材料、制备及用途 |
-
2008
- 2008-07-02 CN CN2008101160430A patent/CN101621009B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1160293A (zh) * | 1995-12-30 | 1997-09-24 | 现代电子产业株式会社 | 半导体器件及其制造方法 |
US20020089031A1 (en) * | 2001-01-08 | 2002-07-11 | Chartered Semiconductor Manufacturing Ltd. | Novel method of body contact for SOI mosfet |
CN1564323A (zh) * | 2004-03-26 | 2005-01-12 | 中国科学院上海微系统与信息技术研究所 | 双埋层结构的绝缘体上的硅材料、制备及用途 |
Non-Patent Citations (1)
Title |
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JP特开平11-26769A 1999.01.29 |
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CN101621009A (zh) | 2010-01-06 |
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Owner name: BEIJING CAS MICRO-INVESTMENT MANAGEMENT CO., LTD. Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20131121 |
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Effective date of registration: 20140108 Address after: 100029 Beijing city Chaoyang District Beitucheng No. 11 Institute of microelectronics building 4 layer Patentee after: BEIJING ZHONGKE XINWEITE SCIENCE & TECHNOLOGY DEVELOPMENT Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3, building 15, room 328 Patentee before: Beijing Zhongke micro Investment Management Co.,Ltd. |