CN107452611B - 用于等离子体蚀刻工件的方法及装置 - Google Patents

用于等离子体蚀刻工件的方法及装置 Download PDF

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CN107452611B
CN107452611B CN201710363139.6A CN201710363139A CN107452611B CN 107452611 B CN107452611 B CN 107452611B CN 201710363139 A CN201710363139 A CN 201710363139A CN 107452611 B CN107452611 B CN 107452611B
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overetch
type
steps
etch
plasma
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Chinese (zh)
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CN107452611A (zh
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尼古拉斯·洛奈
马克西姆·瓦瓦拉
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SPTS Technologies Ltd
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SPTS Technologies Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201710363139.6A 2016-05-20 2017-05-22 用于等离子体蚀刻工件的方法及装置 Active CN107452611B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1608926.0A GB201608926D0 (en) 2016-05-20 2016-05-20 Method for plasma etching a workpiece
GB1608926.0 2016-05-20

Publications (2)

Publication Number Publication Date
CN107452611A CN107452611A (zh) 2017-12-08
CN107452611B true CN107452611B (zh) 2023-02-28

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Country Link
US (1) US10062576B2 (enExample)
EP (1) EP3285284B1 (enExample)
JP (1) JP6898149B2 (enExample)
KR (1) KR102241900B1 (enExample)
CN (1) CN107452611B (enExample)
GB (1) GB201608926D0 (enExample)
TW (1) TWI713110B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11270893B2 (en) 2019-04-08 2022-03-08 International Business Machines Corporation Layer-by-layer etching of poly-granular metal-based materials for semiconductor structures
JP7474651B2 (ja) * 2019-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置
CN114885614B (zh) * 2019-12-23 2023-12-12 应用材料公司 用于蚀刻用于半导体应用的材料层的方法

Citations (12)

* Cited by examiner, † Cited by third party
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EP0822582A2 (en) * 1996-08-01 1998-02-04 Surface Technology Systems Limited Method of surface treatment of semiconductor substrates
EP1336984A2 (en) * 2002-02-13 2003-08-20 Applied Materials, Inc. Method and apparatus for providing modulated bias power to a plasma etch reactor
CN1647254A (zh) * 2002-04-09 2005-07-27 优利讯美国有限公司 用于蚀刻通孔的改进方法
CN1802730A (zh) * 2003-04-09 2006-07-12 兰姆研究有限公司 用于利用气体化学剂周期调制的等离子体蚀刻的方法
CN1985335A (zh) * 2004-06-30 2007-06-20 兰姆研究有限公司 双层抗蚀剂等离子体蚀刻方法
CN101233072A (zh) * 2005-08-04 2008-07-30 阿维扎技术有限公司 加工衬底的方法
CN101331092A (zh) * 2005-12-16 2008-12-24 朗姆研究公司 用于等离子处理系统的刻痕停止脉冲工艺
CN101461072A (zh) * 2006-05-30 2009-06-17 朗姆研究公司 用于等离子处理系统的最小化掩模的底切及刻痕的方法
CN102165565A (zh) * 2008-08-27 2011-08-24 应用材料公司 用以使穿过衬底的过孔侧壁及其它深蚀刻特征部光滑的后蚀刻反应等离子体研磨
CN102983052A (zh) * 2011-09-06 2013-03-20 朗姆研究公司 3d闪存结构的蚀刻工艺
CN104704612A (zh) * 2012-11-01 2015-06-10 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置
CN104979153A (zh) * 2014-04-04 2015-10-14 Spts科技有限公司 蚀刻方法

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JPH06120174A (ja) * 1992-10-05 1994-04-28 Seiko Epson Corp 半導体装置の製造方法
TW506234B (en) 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
US6759339B1 (en) 2002-12-13 2004-07-06 Silicon Magnetic Systems Method for plasma etching a microelectronic topography using a pulse bias power
US7838430B2 (en) 2003-10-28 2010-11-23 Applied Materials, Inc. Plasma control using dual cathode frequency mixing
KR20070003021A (ko) * 2005-06-30 2007-01-05 주식회사 하이닉스반도체 반도체소자의 제조 방법
JP5174319B2 (ja) 2005-11-11 2013-04-03 株式会社日立ハイテクノロジーズ エッチング処理装置およびエッチング処理方法
US7713430B2 (en) * 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
JP4833890B2 (ja) 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
JP5097632B2 (ja) 2008-07-11 2012-12-12 株式会社日立ハイテクノロジーズ プラズマエッチング処理装置
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EP0822582A2 (en) * 1996-08-01 1998-02-04 Surface Technology Systems Limited Method of surface treatment of semiconductor substrates
EP1336984A2 (en) * 2002-02-13 2003-08-20 Applied Materials, Inc. Method and apparatus for providing modulated bias power to a plasma etch reactor
CN1647254A (zh) * 2002-04-09 2005-07-27 优利讯美国有限公司 用于蚀刻通孔的改进方法
CN1802730A (zh) * 2003-04-09 2006-07-12 兰姆研究有限公司 用于利用气体化学剂周期调制的等离子体蚀刻的方法
CN1985335A (zh) * 2004-06-30 2007-06-20 兰姆研究有限公司 双层抗蚀剂等离子体蚀刻方法
CN101233072A (zh) * 2005-08-04 2008-07-30 阿维扎技术有限公司 加工衬底的方法
CN101331092A (zh) * 2005-12-16 2008-12-24 朗姆研究公司 用于等离子处理系统的刻痕停止脉冲工艺
CN101461072A (zh) * 2006-05-30 2009-06-17 朗姆研究公司 用于等离子处理系统的最小化掩模的底切及刻痕的方法
CN102165565A (zh) * 2008-08-27 2011-08-24 应用材料公司 用以使穿过衬底的过孔侧壁及其它深蚀刻特征部光滑的后蚀刻反应等离子体研磨
CN102983052A (zh) * 2011-09-06 2013-03-20 朗姆研究公司 3d闪存结构的蚀刻工艺
CN104704612A (zh) * 2012-11-01 2015-06-10 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置
CN104979153A (zh) * 2014-04-04 2015-10-14 Spts科技有限公司 蚀刻方法

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Publication number Publication date
JP2017208548A (ja) 2017-11-24
JP6898149B2 (ja) 2021-07-07
TWI713110B (zh) 2020-12-11
TW201742148A (zh) 2017-12-01
KR20170131279A (ko) 2017-11-29
EP3285284A1 (en) 2018-02-21
US10062576B2 (en) 2018-08-28
EP3285284B1 (en) 2021-11-24
US20170338124A1 (en) 2017-11-23
KR102241900B1 (ko) 2021-04-16
GB201608926D0 (en) 2016-07-06
CN107452611A (zh) 2017-12-08

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