JP2019501489A - 傾斜イオンビームを用いて空洞を満たすための装置及び技術 - Google Patents
傾斜イオンビームを用いて空洞を満たすための装置及び技術 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000010884 ion-beam technique Methods 0.000 title claims description 32
- 239000000463 material Substances 0.000 claims abstract description 104
- 150000002500 ions Chemical class 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 238000000151 deposition Methods 0.000 claims abstract description 49
- 239000011261 inert gas Substances 0.000 claims abstract description 17
- 239000000945 filler Substances 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 38
- 230000008021 deposition Effects 0.000 claims description 33
- 230000008569 process Effects 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 22
- 238000000605 extraction Methods 0.000 claims description 10
- 239000002243 precursor Substances 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 229910000077 silane Inorganic materials 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 238000005429 filling process Methods 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 230000007935 neutral effect Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- -1 N 2 O Chemical compound 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
Description
方法は、また、前記凝縮種を用いて、充填材料を前記空洞内に蒸着する、ステップを含んでもよい。さらに、前記方法は、エッチャントイオンビームを、前記プラズマチャンバから前記空洞へ、前記基板の平面の垂線に対して選択した非ゼロの入射角で、向ける、ステップを有する、選択エッチングを実施する、ステップを含んでもよい。このように、前記側壁の上部分の上で蒸着された充填材料は、前記空洞の他の領域で蒸着された充填材料に対して、選択的に除去される。
Claims (15)
- プラズマをプラズマチャンバの中で生成する、ステップと、
前記プラズマからの凝縮種及び不活性ガス種の内の少なくとも1つを含むイオンを、基板内の空洞へ、前記基板の平面の垂線に対して非ゼロの入射角で、向ける、ステップと、
前記凝縮種を用いて、充填材料を前記空洞内に蒸着するステップであって、該蒸着するステップは前記イオンを向けるステップと同時に行われる、ステップと、を有し、
前記充填材料は、前記空洞の下部面上に第1の速度で堆積し、前記空洞の側壁の上部部分上に前記第1の速度より遅い第2の速度で堆積する、方法。 - 前記イオンを向けるステップは、細長いアパーチャを有する引出しプレートを通って前記イオンを引出すステップを有する、請求項1に記載の方法。
- 前記イオンを向けるステップは、さらに、
前記細長いアパーチャに隣接して、前記プラズマチャンバ内にビームブロッカーを設けるステップと、
第1のイオンビームとして、前記細長いアパーチャの第1の部分を通って前記イオンの第1の部分を引出すステップであって、前記イオンの第1の部分は、前記垂線に対して第1の非ゼロの入射角を形成する、ステップと、
第2のイオンビームとして、前記細長いアパーチャの第2の部分を通って前記イオンの第2の部分を引出すステップであって、前記イオンの第2の部分は、前記垂線に対して第2の非ゼロの入射角を形成する、ステップと、を有し、
前記垂線は、前記第1の非ゼロの入射角及び前記第2の非ゼロの入射角を2等分する、
請求項2に記載の方法。 - 反応種を、前記プラズマチャンバを横切ることなく、前記基板に供給する、ステップと、をさらに有し、前記反応種は前記充填材料の一部を形成する、請求項1に記載の方法。
- 前記充填材料の最も低いレベルが前記空洞の頂部と少なくとも同一平面になるまで、前記充填材料は再入不可プロフィルを備える、請求項1に記載の方法。
- 前記非ゼロの入射角は30度以下である、請求項1に記載の方法。
- 前記イオンを向けるステップ中、前記非ゼロの入射角の大きさを低減するステップをさらに有する、請求項1に記載の方法。
- 前記大きさを低減するステップは、前記基板と、前記プラズマチャンバから前記イオンを引出すために用いる前記引出しプレートとの間のギャップを増大するステップを有する、請求項7に記載の方法。
- 前記凝縮種は、前記プラズマチャンバの中に向けられる前駆ガスから形成され、前記方法は、さらに、
前記蒸着するステップ中の、第1の過程中、第1の速度で前記前駆ガスを前記プラズマチャンバの中に流すステップと、
前記蒸着するステップ中の、前記第1の過程の後の第2の過程において、第1の速度より遅い第2の速度で前記前駆ガスを前記プラズマチャンバの中に流すステップと、を有する、請求項1に記載の方法。 - 前記基板は前記充填材料と異なる第2の材料を備え、前記方法は、さらに、
前記充填材料を蒸着するステップの後に、前記充填材料の選択エッチングを実施するステップを有し、
前記充填材料の一部は、前記第2の材料に対して、選択的に除去される、請求項1に記載の方法。 - プラズマチャンバと、
該プラズマチャンバへ、不活性ガス及び凝縮種を、それぞれ供給する、第1のガス源及び第2のガス源と、
前記不活性ガスから得られる第1のイオン及び前記凝縮種から得られる第2のイオンを含むプラズマを、前記プラズマチャンバの中で生成する、プラズマジェネレータと、
前記プラズマから前記第1のイオン及び前記第2のイオンのイオンビームを引出し、蒸着露出の前記イオンビームを、基板の平面の垂線に対して非ゼロの入射角で、前記基板内の空洞へ向ける、引出しアセンブリと、
蒸着パラメータの1組を制御する、コントローラと、
命令を含む少なくとも1つのコンピュータ可読記憶媒体と、を備え、
前記命令は、実行されるとき、前記コントローラに、
前記蒸着露出中、前記非ゼロの入射角を調整するために、第1の制御信号を送信するステップ、及び、
前記プラズマチャンバの中への前記凝縮種のガスの流れを調整するために、第2の制御信号を送信するステップ、の内の少なくとも1つを実行させる、装置。 - 反応ガス種を、前記プラズマチャンバを横切ることなく、前記基板に供給する、反応ガスアセンブリを、さらに、備える、請求項11に記載の装置。
- 前記引出しアセンブリは、
細長い引出しアパーチャを有する引出しプレートと、
前記細長い引出しアパーチャに隣接して配置される、ビームブロッカーと、を備え、
該ビームブロッカー及び前記細長い引出しアパーチャは、前記イオンビームを第1のリボンビームとして引出し、第2のリボンビームを引出すように配置され、
前記第1のリボンビーム及び前記第2のリボンビームは、前記垂線に対して、それぞれ、
第1の非ゼロ角度及び第2の非ゼロ角度を画定する、請求項11に記載の装置。 - プラズマをプラズマチャンバの中で生成する、ステップと、
前記プラズマからの凝縮種及び不活性ガス種の内の少なくとも1つを含むイオンを、基板内の下部面及び側壁を備える空洞へ、向ける、ステップと、
前記凝縮種を用いて、充填材料を前記空洞内に蒸着する、ステップと、
エッチャントイオンビームを、前記プラズマチャンバから前記空洞へ、前記基板の平面の垂線に対して選択した非ゼロの入射角で、向ける、ステップを有する、選択エッチングを実施する、ステップと、を有し、
前記側壁の上部分の上で蒸着された充填材料は、前記空洞の他の領域で蒸着された充填材料に対して、選択的に除去される、方法。 - 前記イオンは、前記基板の平面の前記垂線に対して第2の非ゼロの入射角を備える、請求項14に記載の方法。
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