CN106537621B - 热电设备和系统 - Google Patents

热电设备和系统 Download PDF

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Publication number
CN106537621B
CN106537621B CN201580023749.0A CN201580023749A CN106537621B CN 106537621 B CN106537621 B CN 106537621B CN 201580023749 A CN201580023749 A CN 201580023749A CN 106537621 B CN106537621 B CN 106537621B
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China
Prior art keywords
thermoelectric
semiconductor substrate
etching
heat
substrate
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Chinese (zh)
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CN106537621A (zh
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阿克拉姆·I·布卡伊
道格拉斯·W·谭
梁海帆
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Silicium Energy Inc
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Silicium Energy Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
CN201580023749.0A 2014-03-25 2015-03-24 热电设备和系统 Expired - Fee Related CN106537621B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461970322P 2014-03-25 2014-03-25
US61/970,322 2014-03-25
US201462013468P 2014-06-17 2014-06-17
US62/013,468 2014-06-17
PCT/US2015/022312 WO2015148554A1 (en) 2014-03-25 2015-03-24 Thermoelectric devices and systems

Publications (2)

Publication Number Publication Date
CN106537621A CN106537621A (zh) 2017-03-22
CN106537621B true CN106537621B (zh) 2018-12-07

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CN201580023749.0A Expired - Fee Related CN106537621B (zh) 2014-03-25 2015-03-24 热电设备和系统

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US (3) US9263662B2 (enExample)
EP (1) EP3123532B1 (enExample)
JP (1) JP6611727B2 (enExample)
KR (1) KR20170026323A (enExample)
CN (1) CN106537621B (enExample)
WO (1) WO2015148554A1 (enExample)

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