JP6611727B2 - 熱電デバイス及びシステム - Google Patents

熱電デバイス及びシステム Download PDF

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JP6611727B2
JP6611727B2 JP2016558675A JP2016558675A JP6611727B2 JP 6611727 B2 JP6611727 B2 JP 6611727B2 JP 2016558675 A JP2016558675 A JP 2016558675A JP 2016558675 A JP2016558675 A JP 2016558675A JP 6611727 B2 JP6611727 B2 JP 6611727B2
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thermoelectric
semiconductor substrate
holes
etching
heat
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JP2017510992A (ja
JP2017510992A5 (enExample
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ボウカイ，アクラム，アイ．
サム，ダグラス，ダブリュー．
リアン，ハイファン
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マトリックス インダストリーズ，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
JP2016558675A 2014-03-25 2015-03-24 熱電デバイス及びシステム Expired - Fee Related JP6611727B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461970322P 2014-03-25 2014-03-25
US61/970,322 2014-03-25
US201462013468P 2014-06-17 2014-06-17
US62/013,468 2014-06-17
PCT/US2015/022312 WO2015148554A1 (en) 2014-03-25 2015-03-24 Thermoelectric devices and systems

Publications (3)

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JP2017510992A JP2017510992A (ja) 2017-04-13
JP2017510992A5 JP2017510992A5 (enExample) 2018-05-10
JP6611727B2 true JP6611727B2 (ja) 2019-11-27

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JP2016558675A Expired - Fee Related JP6611727B2 (ja) 2014-03-25 2015-03-24 熱電デバイス及びシステム

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US (3) US9263662B2 (enExample)
EP (1) EP3123532B1 (enExample)
JP (1) JP6611727B2 (enExample)
KR (1) KR20170026323A (enExample)
CN (1) CN106537621B (enExample)
WO (1) WO2015148554A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12352503B2 (en) 2019-06-19 2025-07-08 Pascal Lalanne Thermoelectric device for storage or conversion of energy

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