CN106486431B - 具有增强的热耗散的电子功率模块及其制造方法 - Google Patents

具有增强的热耗散的电子功率模块及其制造方法 Download PDF

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CN106486431B
CN106486431B CN201610113344.2A CN201610113344A CN106486431B CN 106486431 B CN106486431 B CN 106486431B CN 201610113344 A CN201610113344 A CN 201610113344A CN 106486431 B CN106486431 B CN 106486431B
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substrate
thermally
bare die
metal region
power module
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CN106486431A (zh
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R·里扎
A·米诺蒂
G·蒙塔尔托
F·萨拉莫内
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STMicroelectronics SRL
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STMicroelectronics SRL
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Abstract

本公开涉及具有增强的热耗散的电子功率模块及其制造方法。一种包括容纳堆叠体(88)的壳体(22)的电子功率模块(20)，其包括：DBC类型或类似的第一衬底(26)；集成了具有一个或多个电传导端子的电子部件的裸片(27)，被机械和热耦合至第一衬底的；和在第一衬底之上和在裸片之上延伸并且呈现出面对裸片的导电路径(32)的DBC类型或类似的第二衬底(29)。裸片通过烧结的热传导膏的第一耦合区域(30)被机械和热耦合至第一衬底；并且电子部件的一个或多个传导端子通过烧结的热传导膏的第二耦合区域(34)被机械、电和热耦合至第二衬底(29)的第一导电路径(32)。

Description

具有增强的热耗散的电子功率模块及其制造方法
技术领域
本发明涉及设置有具有增强的热耗散的封装结构的电子功率模块并涉及用于制造电子功率模块的方法。
背景技术
如已知的，在半导体器件的制造中，封装是将包括电子和机电功能元件的经过处理的衬底转换成可以安装在印刷电路板(PCB)上的部件的最终步骤。封装体提供了对于衬底的保护并且提供了通过其能够将信号供应至功能元件并且获取来自那里的信号的必要的电连接。
为满足不断增加的集成度和尺寸上的减小的需要，目前所使用的封装方法包括晶片级封装(WLP)和3D封装。进一步的解决方案设想出表面安装器件(SMD)，其使得能够实现封装体的尺寸和组装成本的进一步减小。
除所包含的尺寸之外，封装体、特别是用于功率器件的封装体必须同样保证几千瓦的峰值功率的供应和同时几百瓦的耗散。用于功率器件的封装体因此必须满足关于所使用的材料和关于组成它们的元件的相互布置两者的精确要求。在现有技术中已知提供了图1中的横截面图中所图示出的类型的电子器件1，其中设置有侧壁2(典型地是塑料材料的)和基板4(典型地是铜的)的壳体10在其内部容纳包括底部衬底6、被布置在底部衬底6上的一个或多个裸片8和在裸片8之上延伸的顶部衬底9的三维组件。顶部衬底9通过焊料球12被机械和电耦合至底部衬底6。同样，裸片8也被布置在底部衬底6的适当的外壳中并且通过焊料球13被机械和电耦合至顶部衬底9的导电路径。裸片8通过无铅焊料膏或焊料的预制品(典型地是由SnAgCu合金组成的焊料膏或焊料的预制品)被耦合至底部衬底6。
根据一个实施例，裸片8分别集成了被以反并联配置可操作地耦合到一起的IGBT和二极管。顶部衬底9和底部衬底6是直接接合铜(DBC)类型的(或类似的)。DBC技术已被发展以提供陶瓷衬底与相对厚的铜薄层的直接接合，而不用添加进一步的接合材料。DBC衬底典型地被用于功率电路/模块。更详细地，DBC衬底由陶瓷材料(典型地是氧化铝(Al2O3)或氮化铝(AlN))的绝缘层构成，通过高温工艺使两个金属层、特别是呈薄层形式的纯铜(Cu-OFE：99.99％)的两个金属层附着至该绝缘层。最终结果是在铜薄层与中间陶瓷层之间的亲密接合。目前，该类型的衬底被广泛用于将部件安装在电子功率电路中，只要中间陶瓷层保证良好的电绝缘但同时使得能够实现热的良好的向外传递。用于被安装在所述衬底上的部件的连接的导电路径通过对铜层进行蚀刻直到达到绝缘的陶瓷层而获得，由此形成了彼此绝缘的导电区域(路径)。
然而，用于衬底之间的相互耦合和用于裸片与衬底之间的耦合的焊料球的使用是所得到的堆叠体的过度厚度以及由于球与衬底之间的熔化区域的存在而产生的寄生效应的引入的原因。
此外，已知类型的实施例势必造成在制造时间方面长的工艺步骤，引起了生产效率的降低。
发明内容
本发明的目的因此是提供将克服已知解决方案的缺点的配备有具有增强的热耗散的封装结构的电子功率模块和用于制造电子功率模块的方法。
根据本发明，电子功率模块及其制造方法如随附权利要求中所限定地提供。
附图说明
为了理解本发明，现在纯粹通过非限制性示例的方式参照附图来描述其优选实施例，其中：
-图1示出根据已知类型的实施例的功率模块；
-图2示出根据本公开的实施例的功率模块；
-图3示出根据本公开的进一步实施例的功率模块；
-图4至图12示出图2的功率模块的制造步骤；
-图13至图16示出根据本公开的相应的进一步实施例的功率模块；
-图17在俯视立体图中示出了呈现出被设计成各容纳集成了IGBT的相应裸片和集成了二极管的相应裸片的两个凹部的DBC类型的衬底；
-图18示出通过将IGBT和二极管连接到一起而形成的电配置；和
-图19示出被容纳在凹部中的两个裸片以及进一步的裸片。
具体实施方式
图2在横截面图和X、Y、Z轴的三轴系统中示出根据本发明的一个方面的功率模块(或电子功率器件)20。
功率模块20包括：
-封装体22，包括：电和热传导材料的(特别是诸如铜等的金属材料的)处于XY平面中的基板23，和沿着基板23的周缘部分平行于XZ和YZ平面延伸的侧壁24；侧壁24是绝缘材料的、例如塑料材料的；
-利用DBC技术获得的底部衬底26，其通过包括电和热传导材料的烧结膏(特别是包括银的膏)的第一耦合区域25被热耦合至基板23的与第一表面23a相对的第二表面23b；
-第一裸片27和第二裸片28，它们通过包括电和热传导材料的(特别是包括银的)烧结膏的相应的第二耦合区域30被机械和热耦合至底部衬底26的表面26a；和
-利用DBC技术获得的顶部衬底29，其在第一和第二裸片27、28之上延伸并且具有通过包括电和热传导材料的(特别是包括银的)烧结膏的相应的第三耦合区域34被机械、热和电耦合至第一和第二裸片27、28的选择性部分的表面29a。
热耗散器31可以在功率模块20的使用之前被可操作地耦合至基板23的第一表面23a。该操作一般由功率模块20的最终用户进行。然而，根据不同的实施例，热耗散器31可以由制造商直接安装。
根据本公开的进一步方面，封装体22进一步包括顶帽19，其被设计成在顶部封闭封装体22，以用于形成由侧壁24、基板23和顶帽19界定的收容区域。
顶部衬底29在对应于表面29a的位置处具有被获得用于接触第一裸片27的电端子和将所述电端子中的一个或多个电连接至第二裸片的相应的电端子的导电路径。例如，第一裸片27是IGBT器件，其电端子包括集电极区、栅极区和发射极区，而第二裸片28是包括阴极端子和阳极端子的二极管。被设置在顶部衬底29的表面29a上的导电路径在该示例中具有将第二裸片28的二极管以反并联配置与第一裸片27的IGBT器件连接的功能，即将二极管的阴极连接至IGBT的集电极并且将二极管的阳极连接至IGBT的发射极。
根据本公开的一个方面，存在导电路径用于形成IGBT器件的电端子与封装体22的外部之间的电连接。进一步的导电路径形成二极管的电端子与封装体22的外部之间的电连接。
以上导电路径包括：
-被形成在顶部衬底29的表面29a上的导电路径32、37；
-在底部衬底26与顶部衬底29之间的电耦合区域36(其中仅一个被图示在图2中)，其中电耦合区域36包括电和热传导材料(特别是银)的膏；和
-在底部衬底26的表面26a之上延伸并且将电耦合区域36电连接至端子引脚38的导电路径，端子引脚38进而穿过侧壁24在底部衬底26的表面26a与封装体22的外部之间延伸。
以该方式，被集成在第一和第二裸片27、28中的IGBT和二极管器件的电端子可从封装体22的外部电访问。
如已经说过的，顶部和底部衬底26、29是DBC类型的并且各具有陶瓷材料的(例如氧化铝(Al2O3)或氮化铝(AlN)的)相应的绝缘层46、49。呈薄层形式的铜的两个金属层47和48附着至绝缘层46的相对侧。呈薄层形式的铜(优选纯铜)的两个金属层50、51附着至绝缘层49的相对侧。作为电绝缘体的陶瓷层46、49的使用确保随时间保持稳定的高的功能性质(电绝缘、热耗散)。
典型地，绝缘层46、49的厚度被包括在0.25mm与1mm之间，而金属层47、48、50、51的厚度被包括在0.12mm与0.5mm之间。
在图2中图示出的实施例中，裸片27、28如已经描述的通过相应的耦合区域30、34在顶部被耦合至金属层50并且在底部被耦合至金属层48。金属层48、50通过耦合区域36被耦合到一起。
在顶部衬底29的表面29a之上延伸的导电路径32、37通过用于使绝缘层49的一部分露出并因此界定导电区域的对金属层50的蚀刻来获得，以用于致使它们彼此电绝缘。同样，底部衬底26的金属层48也可以被选择性地蚀刻以将容纳第一和第二裸片27、28的区域界定并彼此电绝缘，和/或以将金属层48的用于耦合端子引脚38的区域界定并电绝缘。
此外，根据图2的实施例，底部衬底26的金属层48具有有着小于金属层48的厚度的深度的凹部，其被设计成容纳第一和第二裸片27、28。如此形成的凹部的深度使得第一和第二裸片27、28在Z轴的方向上不从凹部中显著地突出，并且因此通过第一衬底26和通过底部衬底29及通过第一和第二裸片27、28形成的堆叠体的总厚度大致用第一衬底26和顶部衬底29的厚度的和来表示。
底部和顶部衬底26、29及第一和第二裸片27、28被浸在电绝缘封装硅凝胶52中。硅凝胶52保证金属层51的顶部电绝缘，以及裸片27、28与分别属于第一衬底26和顶部衬底29的金属层48和50的面对裸片的部分之间的电绝缘。硅凝胶52进一步具有保护功率模块的裸片、端子和内部区域的表面免受任何污染、氧化和免受潮湿的伤害的功能，以及使功率模块20在使用期间所经受的振动和任何可能的机械冲击衰减的功能。
热耗散器31通过被设计成有助于热从底部衬底26传递至热耗散器31的热界面材料(TIM)56(例如硅脂)的层被热耦合至基板23。热耗散器31通过处于本身已知的方式的螺钉(图2中未示出)被机械耦合至基板23。
图3示出根据本公开的进一步实施例的功率模块60。功率模块60的与图2的功率模块20的那些特征共有的特征没有进行任何进一步的描述并且用相同的附图标记指定出。
功率模块60进一步包括被布置在底部衬底26与顶部衬底29之间的DBC类型的中间衬底62。中间衬底62根据DBC技术具有通过陶瓷材料的绝缘层66被分开的两个金属层64、65、特别是纯铜的两个金属层。中间衬底62在对应于底部表面62a的位置处(即，在金属层64中)具有通过用于使绝缘层49的一部分露出因此形成彼此绝缘的导电区域的金属层64的蚀刻而获得的导电路径。如参照顶部衬底29先前描述的，金属层64的导电路径被耦合至第一和第二裸片27、28的选择性区域，例如以便将相应的电子器件、IGBT和二极管以反并联配置连接到一起，并且以便形成与端子引脚38的连接。
第一和第二裸片27、28通过包括导电材料的(特别是包括银的)烧结膏的耦合区域30被机械和热耦合至底部衬底26的表面26a，并且通过电和热传导材料的(特别是包括银的)烧结膏的相应的耦合区域70被进一步地机械、热和电耦合至中间衬底62的导电路径。
中间衬底62进一步在顶表面62b上(即，在金属层65中)具有被设计成容纳进一步的第三和第四裸片67、68的凹部。如参照第一和第二裸片27、28所描述的，第三和第四裸片67、68通过包括电和热传导材料的(特别是包括银的)烧结膏的耦合区域72被机械和热耦合至中间衬底62的表面62b。
顶部衬底29在中间衬底62之上延伸并且如参照图2先前所描述的具有通过包括电和热导电性材料的(特别是包括银的)烧结膏的相应的耦合区域74被机械、热和电耦合至裸片67、68的导电端子。
硅凝胶72覆盖第一衬底26、第二衬底62和第三衬底29以及存在于它们之间的空间。
端子引脚38穿过封装体22的侧壁24延伸。一些端子引脚38仅接触存在于底部衬底26上的接触焊盘61，而其他端子引脚38仅接触存在于中间衬底62上的接触焊盘63。接触焊盘61、63被形成在底部衬底26的和中间衬底62的周缘区域中。为此目的，为了便于侧壁24在基板23上的组装操作和同时提供端子引脚38与衬底26和62之间的接触，底部衬底26沿着X轴的水平延伸大于中间衬底62的沿着X轴的水平延伸。进而，中间衬底62沿着X轴的水平延伸大于顶部衬底29的沿着X轴的水平延伸。以该方式，在俯视图中，底部衬底26的呈现出用于端子引脚38的接触焊盘的周缘部分从中间衬底62在横向上伸出。同样，中间衬底62的呈现出用于端子引脚38的接触焊盘的周缘部分从顶部衬底29在横向上伸出。以该方式，侧壁2可以被竖直地、即通过使侧壁24沿着Z轴滑动而被安装在基板23上。
参照图4至图12，现在描述用于制造图2的功率模块20的方法。方法以明显的方式也适用于图3的功率模块60的制造。
参照图4，提供呈现出用于容纳裸片27、28的凹部79的DBC类型的底部衬底26。DBC衬底是商业上可得到的并且基于消费者的指示由供应商进行了预处理(例如，以形成凹部79)。
接着(图5)，通过丝网印刷技术或者写入/分配技术，形成电和热传导材料的(特别是包括银的)膏的第一中间耦合区域81。第一中间耦合区域81被形成在凹部79中，并且随后的制造步骤中、在烧结步骤之后将变为形成耦合区域30(图6)。所使用的导电膏具有例如以下特性(其作为烧结压力(例如在10MPa至30MPa范围内选择出的压力)的函数而变化)：
热传导率 150-250W/m·K
电阻 <0.008mΩ·cm
CTE 21ppm/K
弹性模量 50-60GPa
在烘箱中的干燥的步骤已经以近似100℃执行了近似10分钟之后，随后是(图6)将裸片27、28在120℃至125℃在对应于相应的中间耦合区域81的位置处放置(使用选取和放置技术)几秒的步骤，和在压力的施加下的热处理的随后步骤，以使得能够实现烧结。烧结步骤以近似230℃的温度和被包括在10MPa与30MPa之间的压力进行1至3分钟。
接下来(图7)，提供DBC类型的顶部衬底29。如已经说过的，DBC衬底是商业上可得到的并且基于消费者的指示由供应商进行了预处理。顶部衬底29具有在金属层50中被蚀刻出的多个沟槽，以形成彼此电绝缘的导电路径。各导电路径被设计用于当顶部衬底29被面对底部衬底26布置时接触裸片27、28的选择性部分(特别地，被集成在裸片27、28中的器件的电端子)和底部衬底26的选择性部分(特别地，以形成来自和朝向相应的端子引脚38的电路径)。
接着使用丝网印刷技术或写入/分配技术形成电和热传导材料的(特别是包括银的)膏的第二中间耦合区域84、86。第二中间耦合区域84、86被形成在第一裸片27上(选择性地、即仅在对应于后者的电端子的区域中)、在第二裸片28上(选择性地、即仅在对应于后者的电端子的区域中)和在金属层48的被设置用于与金属层50的相应部分机械和电耦合的表面区域中。在随后的制造步骤中，在烧结之后，耦合区域84、86将分别形成耦合区域34和36。
在干燥步骤已经在烤箱中在100℃执行了近似10分钟之后，接着进行用于将顶部衬底29耦合至底部衬底26的倒装芯片步骤。
接着(图8)，在压力P的施加下的热处理的随后步骤实现烧结步骤。更详细地，该烧结步骤以近似230℃的温度和被包括在10MPa与30MPa之间的压力进行1至3分钟。由此通过用耦合区域30、34和36被从机械、热和电角度耦合到一起的底部衬底26、第一和第二裸片27、28及顶部衬底29形成了堆叠体或子组件88。
接着(图9)，提供基板23。使用丝网印刷技术或者写入/分配技术，形成电和热传导材料的(特别是包括银的)膏的层90，用于随后的烧结步骤。
接下来(图10)，在以100℃在烤箱中执行了干燥的步骤近似10分钟之后，接下来的步骤是在已经形成导电膏的层90所在的区域中将图8的堆叠体88耦合至图9的基板23的步骤。
接着，以近似230℃的温度和被包括在10MPa与30MPa之间的压力持续1至3分钟的随后的热处理实现烧结步骤。因此堆叠体88的至基板23的良好的附着以及堆叠体88的至基板23的最佳的热耦合通过如此形成的耦合区域25被保证。
接下来(图11)，组装侧壁24，这些壁24已经设置有端子引脚38。这些步骤牵涉到沿着基板23的周缘区域(或者在任何情况中，基板23的包围堆叠体88的区域)沉积胶(例如专门用于密封和保护电子部件的硅胶)的层91，以及将侧壁24(即，壳体的)安装在胶的层91上。同时，使端子引脚38与金属层48的被设置用于规定目的的区域(即配备有用于通过焊料焊接与端子引脚38连接的金属焊盘61的区域)接触地布置。
接下来(图12)，倒入由侧壁24界定的空间的一部分的是封装硅凝胶52，其被设计成保护堆叠体88连同组成堆叠体88的元件免受任何机械、热或振动冲击以及免受有害的化学或大气制剂、污染、氧化和潮湿的伤害。封装硅凝胶52完全覆盖堆叠体88并且渗透到存在于包围裸片27、28的底部衬底26与顶部衬底29之间的间隙和空腔内。
接着，安装帽19，其典型地通过使端子引脚滑动到被设置用于该目的的通孔内而被固定并装配在壳体的外周界24上。
同样，接着执行耗散器31的安装，其包括形成热界面层56、分配典型地由聚合材料(其从热的角度是高度地传导的但从电的角度是较差地传导的)的化合物形成的导热油脂并接着通过将耗散器31经由热界面层56耦合至基板23的步骤。以本身已知的方式且图中未示出的，通过螺钉将耗散器31保持机械地耦合至基板23。由此获得了图2的功率模块20。
图3的功率模块60的制造通过遵照图4至图12的步骤来获得，只是图7的步骤同样地设想使用倒装芯片技术将进一步的中间衬底62耦合至底部衬底26、使用导电膏将进一步的裸片67、68耦合至中间衬底、用于使导电膏硬化的随后的烧结和使用倒装芯片技术将顶部衬底29耦合至中间衬底62。
图13示出根据本公开的进一步的实施例的功率模块100。
功率模块100包括图8中图示出的且如先前所描述的类型的堆叠体88。图2的功率模块20和图13的功率模块100共有的元件通过相同的附图标记指定出并且没有任何进一步的描述。
然而，根据图13的实施例，基板23不存在，形成封装体22的外部壳体的侧壁24和帽19也不存在。事实上，在该情况中，封装体101是通过使设置有被焊料焊接的端子引脚38的堆叠体88经受注塑成型步骤、用通过专用模具(典型地是环氧树脂、也称作环氧树脂注塑化合物-EMC的模具)获得的塑料壳体102完全地涂覆底部衬底26和顶部衬底29的横向部分而获得。顶部衬底29的和底部衬底26的表面29b和26b分别未由塑料壳体102覆盖并且通过相应的热界面层106和108被热耦合至相应的耗散器108和31。
端子引脚38未完全由塑料壳体102覆盖，并且从封装体101中伸出来，由此使得能够实现从外部的电访问。
为了使可能在注塑成型步骤期间未填充有树脂的可能的空隙的存在最小化，分配硅凝胶，其通过毛细作用填充在衬底26耦合至衬底29之后存在的所有间隙和可能的空隙。该步骤在两个衬底26和29的耦合之后且在注塑成型步骤之前使用分配技术(可能是真空辅助下的)进行。
图14示出根据本发明的进一步的实施例的功率模块110。功率模块110与图13的功率模块100类似；即，它具有由通过注塑成型获得的塑料壳体102形成的封装体；然而，在该情况中，功率模块110进一步包括在第一衬底26与顶部衬底29之间延伸的DBC类型的中间衬底62，如已经参照图3图示出且描述的并且在这里没有任何进一步描述。
先前所描述的功率模块20、60、100和110被设计成待安装在容纳对于功率模块20、60、100和110的控制所必要的电路的印刷电路板(PCB)上。然而，根据进一步的实施例，图13和图14的功率模块100和110的控制电路可以被至少部分地集成在它自己的封装体内。
图15通过示例的方式示出具有中间衬底62和以与参照中间衬底62已在先前所描述的类似的方式被布置在中间衬底62和顶部衬底29之间的进一步的中间衬底122的功率模块120。中间衬底122进一步在其顶表面122b上具有被设计成容纳进一步的第五裸片127和进一步的第六裸片128的凹部。如参照第一的第二裸片27和28所描述的，第五和第六裸片127、128通过包括电和热传导烧结膏材料(特别是包括银)的膏材料的耦合区域124被机械和热耦合至中间衬底122的表面122b。
具有有着以反并联配置连接的相应的二极管的三个IGBT的该类型的功率模块可以例如用作IPM(智能功率模块)。
顶部衬底29在中间衬底122之上延伸并且具有(如先前已经描述的)通过包括电和热传导材料(特别是包括银)的烧结膏的相应的耦合区域129被机械、热和电耦合至裸片127、128的导电端子的导电路径(未图示)。
顶部衬底29的顶表面29b容纳PCB 115，其通过非导电环氧树脂胶的层116被机械耦合至顶表面29b。PCB 115进而容纳驱动器件118，其被配置成驱动被集成在裸片27、67和127中的IGBT。驱动器件118通过接合导线130被可操作地连接至PCB 115，并且通过接合导线132和穿过顶部衬底29与中间衬底62、122形成的相应的通孔(未图示)被可操作地连接至裸片27、67和127。
PCB 115进一步可选地容纳温度传感器134和/或进一步的无源元件136(电阻器、电容器等等)，其具有电容和RC滤波器的功能(以本身已知的方式并且未形成本发明的主题)。
此外，附加的温度传感器138可以被布置在容纳裸片27、28的凹部中、在容纳裸片67、68的凹部中和在容纳裸片127、128的凹部中。温度传感器138通过穿过顶部衬底29和中间衬底62、122形成的通孔(通过示例的方式用虚线表示出通孔123)并通过在PCB115与顶部衬底29的表面29b之间延伸的接合导线140被电连接至PCB 115。
图15的功率模块120具有由通过注塑成型获得的塑料壳体142所形成的封装体，其在衬底26、62、122、29的旁边并且在衬底29的顶部延伸。结果，在该情况中仅存在有被热耦合至底部衬底26的耗散器31。
端子引脚139延伸穿过塑料壳体142并且与底部衬底26、中间衬底62、中间衬底122和顶部衬底29电接触(例如，通过焊料焊接)。
根据进一步的实施例(图16中图示出)，功率模块150包括多个驱动器件152，各布置在底部衬底26、中间衬底62和中间衬底122的容纳集成了IGBT的相应裸片27、67、127的相应凹部中。各驱动器件152被配置成控制和驱动相应的IGBT器件。各驱动器件152通过一个或多个接合导线156和通过彼此绝缘的导电路径被电连接至相应的IGBT器件，导电路径是通过对相应的衬底26、62、122的金属层进行蚀刻直到到达下层绝缘层由此限定出适当的导电路径而在相应的衬底26、62、122的金属层中获得的。底部衬底26的、中间衬底62的和中间衬底122的各凹部可选地容纳有相应的温度传感器160。
根据图16的实施例，顶部衬底29的表面29b未容纳PCB 115并因此如已经在图13中图示出并参照其描述的那样自由地被耦合至热耗散器108。
参照图15，可能需要注意的是，PCB 115可以使用被认为最适当的技术被电耦合至顶部衬底29。可能的技术包括导线接合或焊料球接合。同样，驱动器件118和温度传感器134可以使用从导线接合或利用导电焊料膏(例如，烧结膏)的接合之间选取的最适当的技术被电耦合至PCB 115。
同样，参照图16，驱动器件152可以使用从导线接合或焊料球接合之间选取的技术被电耦合至相应的衬底，而温度传感器160使用导电焊料膏(例如，烧结膏)被耦合至相应的衬底26、62、122。
上述描述中所呈现出的内容发现了例如在包括高侧IGBT和低侧IGBT的半桥功率模块的制造上的应用，各IGBT如先前所讨论的被反并联地连接至相应的二极管。IGBT器件无论低侧的还是高侧的都具有功率开关的功能，并且二极管是续流二极管(FWD)。
其他应用可能关于包括六个IGBT和FWD的六组类型的三相功率模块。
图17在俯视立体图中示出了呈现出被设计成各容纳集成了IGBT的相应裸片和集成了二极管的相应裸片的两个凹部200、202的DBC类型的衬底226。凹部是在衬底226的顶部金属层248中获得的。根据已经与DBC技术有关地所注意到的，金属层248在绝缘层246之上延伸。通过在在底部衬底的正上方延伸的DBC衬底(未图示)的金属层中形成导电路径而获得的适当的连接(根据已经讨论的堆叠体88的实施例)，能够将IGBT和二极管连接到一起以提供图18的电配置(半桥配置)。如可以从图17注意到的，凹部200、202通过对金属层248进行蚀刻直到到达下层的绝缘层246而获得的沟槽206彼此电绝缘。
图19示出被容纳在凹部200中的两个裸片207和208，及被容纳在凹部202中的进一步的裸片217、218。裸片207和217各集成了IGBT，其中的每一个设置有集电极端子C、发射极端子E和栅极端子G。裸片208和218各集成了设置有相应的阴极端子K和相应的阳极端子A的二极管。所有端子可从顶部访问，使得它们可以通过烧结膏的层的介入由在衬底226之上延伸的衬底(未图示)的导电路径接触。
可利用本文中所公开的发明获得的优点从上述描述中清楚地显现出。
特别地，根据本公开的发明使得能够实现待获得的部件的高集成水平、高可靠性和高密度。
最后，很显然可以对本文中所描述和图示出的内容进行许多修改和变化，其所有均落入如所附权利要求中所限定的发明构思的范围内。
特别地，组成根据所图示出的实施例中的任何一个的堆叠体88的衬底的数量可以大于或小于所描述的和图中所图示出的；特别地，可以根据具体应用的和必要数量的裸片(电子部件)而根据需要选取。
此外，IGBT和二极管可以并联连接到一起，而不是如先前所描述的反并联。

Claims (15)

1.一种电子功率模块(20；100)，包括容纳堆叠体(88)的壳体(22；102)，所述电子功率模块包括：
第一衬底(26；62)，包括顶部金属区域、底部金属区域和被布置在所述顶部金属区域与所述底部金属区域之间的绝缘区域；
第一裸片(27；67)，集成了具有一个或多个电传导端子的第一电子部件，所述第一裸片被机械和热耦合至所述第一衬底(26；62)的第一表面(26a)；以及
第二衬底(29)，包括顶部金属区域、底部金属区域和被布置在所述顶部金属区域与所述底部金属区域之间的绝缘区域，所述第二衬底在所述第一衬底(26；62)之上和所述第一裸片(27；67)之上延伸并且在所述第二衬底(29)的底部金属区域中具有第一导电路径(32)，
其特征在于，所述第一裸片(27；67)通过烧结的热传导膏的第一耦合区域(30；72)被机械和热耦合至所述第一衬底(26；62)；并且
所述第一电子部件的所述一个或多个传导端子通过烧结的热传导膏的第二耦合区域(34；74)被机械、电和热耦合至所述第二衬底(29)的所述第一导电路径(32)，
其中所述第一衬底(26；62)的所述顶部金属区域具有第一凹部(79)，所述第一裸片(27；67)被容纳在所述第一凹部(79)中。
2.根据权利要求1所述的电子功率模块，其中所述第一耦合区域(30；72)和所述第二耦合区域(34；74)是银的烧结层。
3.根据权利要求1或2所述的电子功率模块，其中所述第一衬底(26；62)通过烧结的热传导膏的第三耦合区域(36)从机械、电和热的角度被直接耦合至所述第二衬底(29)。
4.根据权利要求3所述的电子功率模块，其中所述第一衬底(26；62)具有被焊料焊接至所述壳体(22；102)的端子引脚(38)的至少一个导电焊盘(61；63)，所述端子引脚(38)在所述壳体内的区域与所述壳体外的区域之间形成电连接，
并且其中所述第二衬底(29)的所述第一导电路径通过烧结的热传导膏的所述第三耦合区域(36)被进一步电耦合至所述第一衬底(26；62)的所述导电焊盘(61；63)。
5.根据权利要求1所述的电子功率模块，其中所述堆叠体(88)进一步包括第二裸片(28)，所述第二裸片(28)被容纳在所述凹部(79)中并且集成了具有一个或多个传导端子的第二电子部件，所述第二裸片(28)通过烧结的热传导膏的第四耦合区域(30；72)被机械和热耦合至所述第一衬底(26；62)的所述顶部金属区域，并且其中被集成在所述第二裸片(28)中的所述第二电子部件的所述传导端子中的一个被机械、电和热耦合至所述第二衬底(29)的所述第一导电路径(32)。
6.根据权利要求5所述的电子功率模块，其中所述第一裸片(27；67)的所述第一电子部件是具有集电极端子和发射极端子的IGBT，并且所述第二裸片(28)的所述第二电子器件是具有阴极端子和阳极端子的二极管，
所述第二衬底(29)进一步具有与所述第一导电路径(32)电绝缘的第二导电路径(37)，所述第二导电路径(37)将所述发射极端子电连接至所述阳极端子，并且其中所述第一导电路径(32)将所述集电极端子电连接至所述阴极端子，由此形成了所述二极管和所述IGBT的反并联连接。
7.根据权利要求1-2和4-6中的任一项所述的电子功率模块，进一步包括：电和热传导材料的基板(23)，被热耦合至所述第一衬底(26；62)；和被热耦合至所述基板(23)的热耗散器(31)。
8.根据权利要求1-2和4-6中的任一项所述的电子功率模块，其中所述壳体(22；102)包括：
环氧树脂的塑料壳体(102)，其在横向上包围所述堆叠体(88)，使所述堆叠体(88)的顶表面(29b)和所述堆叠体(88)的底表面露出，其中所述堆叠体的所述顶表面和所述底表面被配置成被热耦合至相应的热耗散器(31，108)。
9.根据权利要求1-2和4-6中的任一项所述的电子功率模块，进一步包括：
至少一个第三衬底(26)，包括顶部金属区域、底部金属区域和被布置在所述顶部金属区域与所述底部金属区域之间的绝缘区域，所述第三衬底在所述第一衬底(62)的下面延伸并且在所述第三衬底的顶部金属区域中呈现出凹部(79)；和
第三裸片(27)和第四裸片(28)，其被容纳在所述第三衬底的所述凹部中并且集成了具有相应的传导端子的相应的电子部件，
其中所述第三裸片(27)通过烧结的热传导膏的第五耦合区域(30)被机械和热耦合至所述第三衬底(26)，
并且其中被集成在所述第三裸片和所述第四裸片中的所述电子部件的所述传导端子通过烧结的热传导膏的第五耦合区域(70)被机械、电和热耦合至在所述第一衬底(62)的所述底部金属区域中延伸的导电路径。
10.根据权利要求1-2和4-6中的任一项所述的电子功率模块，其中所述堆叠体(88)进一步包括具有用于驱动所述第一电子部件的器件的印刷电路板(115)，所述印刷电路板(115)被机械耦合至所述第二衬底(29)的所述顶部金属区域并且通过穿过所述第二衬底(29)形成的通孔(123)被可操作地耦合至所述第一电子部件。
11.根据权利要求10所述的电子功率模块，进一步包括被机械耦合在所述第一衬底(26)和所述第二衬底(29)之间的至少一个温度传感器(138)。
12.根据权利要求1-2和4-6中的任一项所述的电子功率模块，进一步包括被布置在所述第一衬底(26)和所述第二衬底(29)之间的用于驱动所述第一电子部件的至少一个器件(152)。
13.根据权利要求1-2、4-6和11中的任一项所述的电子功率模块，其中所述第一衬底(26)的所述顶部金属区域、所述底部金属区域和被布置在其间的所述绝缘区域的相应的面积大于所述第二衬底(29)的所述顶部金属区域、所述底部金属区域和被布置在其间的所述绝缘区域的相应的面积。
14.一种用于制造电子功率模块(20；100)的方法，包括以下步骤：
提供包括顶部金属区域、底部金属区域和被布置在所述顶部金属区域与所述底部金属区域之间的绝缘区域的第一衬底(26；62)；
将集成了具有一个或多个电传导端子的第一电子部件的第一裸片(27；67)机械和热耦合至所述第一衬底(26；62)的第一表面(26a)；
在所述第一衬底(26；62)上和所述第一裸片(27；67)上提供第二衬底(29)，所述第二衬底包括顶部金属区域、底部金属区域和被布置在所述顶部金属区域与所述底部金属区域之间的绝缘区域并且在所述第二衬底(29)的底部金属区域中呈现出第一导电路径(32)，
其特征在于，将所述第一裸片(27；67)机械和热耦合至所述第一衬底(26；62)的步骤包括将第一层的热传导膏(81)分配在所述第一衬底(26；62)上，并且执行所述第一层的热传导膏的烧结的操作，并且在于所述方法进一步包括以下步骤：
将第二层的热传导膏(84)仅在对应于所述第一电子部件的所述一个或多个传导端子的区域中分配在所述第一裸片(27)上；
将所述第一导电路径(32)布置为与所述第二层的热传导膏(84)接触；和
执行所述第二层的热传导膏(84)的烧结的操作，以用于将所述第一电子部件的所述一个或多个传导端子与所述第一导电路径(32)机械、电和热耦合，
其中所述第一衬底(26；62)的所述顶部金属区域具有第一凹部(79)，所述第一裸片(27；67)被容纳在所述第一凹部(79)中。
15.根据权利要求14所述的制造方法，其中将所述第二衬底(29)布置在所述第一衬底(26；62)上的步骤包括：
将第三层的热传导膏(86)分配在所述第一衬底(26；62)的选择性区域中；
将所述第二衬底(29)的所述第一导电路径(32)在所述第三层的热传导膏(86)存在的地方耦合至所述第一衬底(26；62)；
执行所述第三层的热传导膏(86)的烧结的操作，以用于将所述第二衬底(29)机械、电和热固定至所述第一衬底(26；62)。
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