CN1061783C - 制造半导体器件的方法 - Google Patents

制造半导体器件的方法 Download PDF

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Publication number
CN1061783C
CN1061783C CN95108567A CN95108567A CN1061783C CN 1061783 C CN1061783 C CN 1061783C CN 95108567 A CN95108567 A CN 95108567A CN 95108567 A CN95108567 A CN 95108567A CN 1061783 C CN1061783 C CN 1061783C
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layer
semiconductor
conductive
contact window
wafer
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Expired - Lifetime
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CN95108567A
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Chinese (zh)
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CN1115118A (zh
Inventor
R·德克尔
H·G·R·马斯
W·T·A·J·艾因邓
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Adeia Semiconductor Solutions LLC
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Koninklijke Philips Electronics NV
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    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
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    • H01L2924/11Device type
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    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/012Bonding, e.g. electrostatic for strain gauges

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Wire Bonding (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Weting (AREA)
CN95108567A 1994-05-24 1995-05-24 制造半导体器件的方法 Expired - Lifetime CN1061783C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
BE09400527 1994-05-24
BE9400527A BE1008384A3 (nl) 1994-05-24 1994-05-24 Werkwijze voor het vervaardigen van halfgeleiderinrichtingen met halfgeleiderelementen gevormd in een op een dragerplak aangebrachte laag halfgeleidermateriaal.

Publications (2)

Publication Number Publication Date
CN1115118A CN1115118A (zh) 1996-01-17
CN1061783C true CN1061783C (zh) 2001-02-07

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Application Number Title Priority Date Filing Date
CN95108567A Expired - Lifetime CN1061783C (zh) 1994-05-24 1995-05-24 制造半导体器件的方法

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US (1) US5504036A (cg-RX-API-DMAC7.html)
EP (1) EP0684643B1 (cg-RX-API-DMAC7.html)
JP (1) JP2987081B2 (cg-RX-API-DMAC7.html)
KR (1) KR100348233B1 (cg-RX-API-DMAC7.html)
CN (1) CN1061783C (cg-RX-API-DMAC7.html)
BE (1) BE1008384A3 (cg-RX-API-DMAC7.html)
DE (1) DE69505048T2 (cg-RX-API-DMAC7.html)
TW (1) TW288193B (cg-RX-API-DMAC7.html)

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US5897371A (en) * 1996-12-19 1999-04-27 Cypress Semiconductor Corp. Alignment process compatible with chemical mechanical polishing
EP1148546A1 (de) * 2000-04-19 2001-10-24 Infineon Technologies AG Verfahren zur Justierung von Strukturen auf einem Halbleiter-substrat
US6717254B2 (en) 2001-02-22 2004-04-06 Tru-Si Technologies, Inc. Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture
JP3788268B2 (ja) * 2001-05-14 2006-06-21 ソニー株式会社 半導体装置の製造方法
TW487958B (en) * 2001-06-07 2002-05-21 Ind Tech Res Inst Manufacturing method of thin film transistor panel
US7831151B2 (en) 2001-06-29 2010-11-09 John Trezza Redundant optical device array
US6753199B2 (en) * 2001-06-29 2004-06-22 Xanoptix, Inc. Topside active optical device apparatus and method
US6787916B2 (en) 2001-09-13 2004-09-07 Tru-Si Technologies, Inc. Structures having a substrate with a cavity and having an integrated circuit bonded to a contact pad located in the cavity
JP4110390B2 (ja) * 2002-03-19 2008-07-02 セイコーエプソン株式会社 半導体装置の製造方法
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US8294172B2 (en) 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
JP2005150686A (ja) 2003-10-22 2005-06-09 Sharp Corp 半導体装置およびその製造方法
US20080094725A1 (en) * 2004-08-09 2008-04-24 Koninklijke Philips Electronics, N.V. Method for bringing together at least two predetermined quantities of fluid and/or gas
US20080191260A1 (en) * 2004-10-05 2008-08-14 Koninklijke Philips Electronics N.V. Semiconductor Device And Use Thereof
WO2007000697A2 (en) * 2005-06-29 2007-01-04 Koninklijke Philips Electronics N.V. Method of manufacturing an assembly and assembly
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GB2492442B (en) 2011-06-27 2015-11-04 Pragmatic Printing Ltd Transistor and its method of manufacture
GB2492532B (en) * 2011-06-27 2015-06-03 Pragmatic Printing Ltd Transistor and its method of manufacture
US9728498B2 (en) * 2015-06-30 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure

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Publication number Publication date
BE1008384A3 (nl) 1996-04-02
EP0684643B1 (en) 1998-09-30
CN1115118A (zh) 1996-01-17
KR100348233B1 (ko) 2002-11-02
JP2987081B2 (ja) 1999-12-06
US5504036A (en) 1996-04-02
DE69505048T2 (de) 1999-05-12
JPH07321298A (ja) 1995-12-08
KR950034534A (ko) 1995-12-28
EP0684643A1 (en) 1995-11-29
TW288193B (cg-RX-API-DMAC7.html) 1996-10-11
DE69505048D1 (de) 1998-11-05

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