GB2492532B - Transistor and its method of manufacture - Google Patents

Transistor and its method of manufacture

Info

Publication number
GB2492532B
GB2492532B GB1110834.7A GB201110834A GB2492532B GB 2492532 B GB2492532 B GB 2492532B GB 201110834 A GB201110834 A GB 201110834A GB 2492532 B GB2492532 B GB 2492532B
Authority
GB
United Kingdom
Prior art keywords
transistor
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1110834.7A
Other versions
GB201110834D0 (en
GB2492532A (en
Inventor
Richard Price
Scott White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pragmatic Semiconductor Ltd
Original Assignee
Pragmatic Printing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pragmatic Printing Ltd filed Critical Pragmatic Printing Ltd
Priority to GB1110834.7A priority Critical patent/GB2492532B/en
Publication of GB201110834D0 publication Critical patent/GB201110834D0/en
Priority to GB1505215.2A priority patent/GB2522565B/en
Priority to GB1207599.0A priority patent/GB2492442B/en
Priority to PCT/GB2012/051465 priority patent/WO2013001282A2/en
Priority to US14/129,630 priority patent/US9425193B2/en
Priority to EP12730616.5A priority patent/EP2724373B8/en
Publication of GB2492532A publication Critical patent/GB2492532A/en
Application granted granted Critical
Publication of GB2492532B publication Critical patent/GB2492532B/en
Priority to US15/236,057 priority patent/US10672765B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
GB1110834.7A 2011-06-27 2011-06-27 Transistor and its method of manufacture Active GB2492532B (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB1110834.7A GB2492532B (en) 2011-06-27 2011-06-27 Transistor and its method of manufacture
GB1505215.2A GB2522565B (en) 2011-06-27 2012-05-01 Transistor and its method of manufacture
GB1207599.0A GB2492442B (en) 2011-06-27 2012-05-01 Transistor and its method of manufacture
PCT/GB2012/051465 WO2013001282A2 (en) 2011-06-27 2012-06-22 Transistor and its method of manufacture
US14/129,630 US9425193B2 (en) 2011-06-27 2012-06-22 Methods of manufacturing transistors including forming a depression in a surface of a covering of resist material
EP12730616.5A EP2724373B8 (en) 2011-06-27 2012-06-22 Transistor and its method of manufacture
US15/236,057 US10672765B2 (en) 2011-06-27 2016-08-12 Methods of manufacturing transistors including forming a depression in a surface of a covering of resist material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1110834.7A GB2492532B (en) 2011-06-27 2011-06-27 Transistor and its method of manufacture

Publications (3)

Publication Number Publication Date
GB201110834D0 GB201110834D0 (en) 2011-08-10
GB2492532A GB2492532A (en) 2013-01-09
GB2492532B true GB2492532B (en) 2015-06-03

Family

ID=44485183

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1110834.7A Active GB2492532B (en) 2011-06-27 2011-06-27 Transistor and its method of manufacture

Country Status (1)

Country Link
GB (1) GB2492532B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9996173B2 (en) 2013-02-12 2018-06-12 Illinois Tool Works, Inc. Front panel overlay incorporating a logic circuit

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167372A (en) * 1984-02-09 1985-08-30 Seiko Epson Corp Manufacture of thin-film transistor
EP0684643A1 (en) * 1994-05-24 1995-11-29 Koninklijke Philips Electronics N.V. Method of manufacturing semiconductor devices in an active layer on an support substrate
WO1996036072A2 (en) * 1995-05-10 1996-11-14 Philips Electronics N.V. Method of manufacturing a device, by which method a substrate with semiconductor element and conductor tracks is glued to a support body with metallization
GB2396734A (en) * 2002-12-26 2004-06-30 Lg Philips Lcd Co Ltd Organic electroluminescent device and manufacturing method for the same
JP2004247716A (en) * 2003-01-23 2004-09-02 Mitsubishi Chemicals Corp Method for manufacturing laminated body
GB2421115A (en) * 2004-12-09 2006-06-14 Seiko Epson Corp A self-aligning patterning method for use in the manufacture of a plurality of thin film transistors
US20090159880A1 (en) * 2007-12-20 2009-06-25 Konica Minolta Holdings, Inc. Electronic device and method of manufacturing the same
GB2479150A (en) * 2010-03-30 2011-10-05 Nano Eprint Ltd Transistor and its method of manufacture

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167372A (en) * 1984-02-09 1985-08-30 Seiko Epson Corp Manufacture of thin-film transistor
EP0684643A1 (en) * 1994-05-24 1995-11-29 Koninklijke Philips Electronics N.V. Method of manufacturing semiconductor devices in an active layer on an support substrate
WO1996036072A2 (en) * 1995-05-10 1996-11-14 Philips Electronics N.V. Method of manufacturing a device, by which method a substrate with semiconductor element and conductor tracks is glued to a support body with metallization
GB2396734A (en) * 2002-12-26 2004-06-30 Lg Philips Lcd Co Ltd Organic electroluminescent device and manufacturing method for the same
JP2004247716A (en) * 2003-01-23 2004-09-02 Mitsubishi Chemicals Corp Method for manufacturing laminated body
GB2421115A (en) * 2004-12-09 2006-06-14 Seiko Epson Corp A self-aligning patterning method for use in the manufacture of a plurality of thin film transistors
US20090159880A1 (en) * 2007-12-20 2009-06-25 Konica Minolta Holdings, Inc. Electronic device and method of manufacturing the same
GB2479150A (en) * 2010-03-30 2011-10-05 Nano Eprint Ltd Transistor and its method of manufacture

Also Published As

Publication number Publication date
GB201110834D0 (en) 2011-08-10
GB2492532A (en) 2013-01-09

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