KR100348233B1 - 반도체장치의제조방법 - Google Patents

반도체장치의제조방법 Download PDF

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Publication number
KR100348233B1
KR100348233B1 KR1019950012817A KR19950012817A KR100348233B1 KR 100348233 B1 KR100348233 B1 KR 100348233B1 KR 1019950012817 A KR1019950012817 A KR 1019950012817A KR 19950012817 A KR19950012817 A KR 19950012817A KR 100348233 B1 KR100348233 B1 KR 100348233B1
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South Korea
Prior art keywords
semiconductor
layer
slice
conductive
insulating layer
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Expired - Lifetime
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KR1019950012817A
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Korean (ko)
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KR950034534A (ko
Inventor
로날드데커
헨리쿠스고데프리더스라파엘마스
빌헬르무스테오도러스안토니우스요하네스반덴아인덴
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코닌클리케 필립스 일렉트로닉스 엔.브이.
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Publication of KR950034534A publication Critical patent/KR950034534A/ko
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Publication of KR100348233B1 publication Critical patent/KR100348233B1/ko
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
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    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/012—Bonding, e.g. electrostatic for strain gauges

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Wire Bonding (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Weting (AREA)
KR1019950012817A 1994-05-24 1995-05-23 반도체장치의제조방법 Expired - Lifetime KR100348233B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
BE09400527 1994-05-24
BE9400527A BE1008384A3 (nl) 1994-05-24 1994-05-24 Werkwijze voor het vervaardigen van halfgeleiderinrichtingen met halfgeleiderelementen gevormd in een op een dragerplak aangebrachte laag halfgeleidermateriaal.
BE941527 1994-05-24

Publications (2)

Publication Number Publication Date
KR950034534A KR950034534A (ko) 1995-12-28
KR100348233B1 true KR100348233B1 (ko) 2002-11-02

Family

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Family Applications (1)

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KR1019950012817A Expired - Lifetime KR100348233B1 (ko) 1994-05-24 1995-05-23 반도체장치의제조방법

Country Status (8)

Country Link
US (1) US5504036A (cg-RX-API-DMAC7.html)
EP (1) EP0684643B1 (cg-RX-API-DMAC7.html)
JP (1) JP2987081B2 (cg-RX-API-DMAC7.html)
KR (1) KR100348233B1 (cg-RX-API-DMAC7.html)
CN (1) CN1061783C (cg-RX-API-DMAC7.html)
BE (1) BE1008384A3 (cg-RX-API-DMAC7.html)
DE (1) DE69505048T2 (cg-RX-API-DMAC7.html)
TW (1) TW288193B (cg-RX-API-DMAC7.html)

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EP1148546A1 (de) * 2000-04-19 2001-10-24 Infineon Technologies AG Verfahren zur Justierung von Strukturen auf einem Halbleiter-substrat
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JP3788268B2 (ja) * 2001-05-14 2006-06-21 ソニー株式会社 半導体装置の製造方法
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BE1008384A3 (nl) 1996-04-02
EP0684643B1 (en) 1998-09-30
CN1115118A (zh) 1996-01-17
JP2987081B2 (ja) 1999-12-06
US5504036A (en) 1996-04-02
DE69505048T2 (de) 1999-05-12
CN1061783C (zh) 2001-02-07
JPH07321298A (ja) 1995-12-08
KR950034534A (ko) 1995-12-28
EP0684643A1 (en) 1995-11-29
TW288193B (cg-RX-API-DMAC7.html) 1996-10-11
DE69505048D1 (de) 1998-11-05

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