TW288193B - - Google Patents

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Publication number
TW288193B
TW288193B TW084105282A TW84105282A TW288193B TW 288193 B TW288193 B TW 288193B TW 084105282 A TW084105282 A TW 084105282A TW 84105282 A TW84105282 A TW 84105282A TW 288193 B TW288193 B TW 288193B
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TW
Taiwan
Prior art keywords
layer
supplied
contact windows
wafer
elements
Prior art date
Application number
TW084105282A
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English (en)
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Philips Electronics Nv
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Publication of TW288193B publication Critical patent/TW288193B/zh

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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Wire Bonding (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Weting (AREA)

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2β〇103 Α7 Β7 五、發明説明（1 ) (請先閲讀背面之注意事項再填寫本頁) 本發明係闞於製造半導體裝置的方法，由多個半導H元 件和導«軌道形成在一供應著一半導體材料層於一絕緣β 上之半導雅晶片的一第一側上•其後該半等體晶Η則以該 第一側固定至一支持晶片*其後該材料被從該半導賭晶Η 移走，從第二俩移走，直至該絕緣層已被暘霓，在該方法 中，該闼緣層則被供應著多個接觸窗，其中供應著多個H 接至該等半等體元件的傳辱元件。 該支持晶片可Μ —般方法分成多儸分麯的匾塊，如用鋸 的，Μ形成可Μ包含一個或幾僑半導體元件的各別的半導 «装置。在前例可獲得多個離散半等«装置•在後例則聚 集成多個半等«装置。該等半等體元件可以是雙極《晶麵 或埸效鬣晶體。 經濟部中央標準局員工消費合作社印製 既然該半等艚晶片在形成該等半導《元件後不需被加熱 到攝氏溫度約200度Μ上，而固定該半等《晶片至該支持 晶片及在該支持晶片本身上並不霈要特別之需求。該半等 體晶片可藉著一合成樹脂膠•如環氧樹脂或亞克力膠，被 固定在一金靨製的一傳等支持晶片如網，或固定至一由一 絕緣«製成的一絕緣支持晶片如玻璃或鋁。該支持晶片可 以有一不同於該半導嫌晶片的材料之膨脹係數。在接鑛處 理步»期間膨脹係數差將會較小且可由膠合層所容納。 該半導體材料層•如由矽製成，可Κ是單晶的•也可以 是多晶或非晶的。該絕緣層，如由氧化矽製成，可由沉》 法所提供，也可Μ由其他方法提供。經由將氧雛子植入矽 晶片可獲得一氧化矽靥。 _-4- 本紙張尺度適用中國國家橾準（CNS ) Α4規格（2丨0 X 2们公釐） 經濟部中央標準局員工消費合作杜印製 A7 B7 五、發明説明（2 ) 在該嬅緣雇曝霣的巨1減少處理期間 > 供應有該半等Η 材料曆的該絕緣靥其作用係在其上該巨量減少會自動停止 •如同在蝕刻處理期間之蝕刻停止層或抛光處理期間之抛 光停止暦。該絕緣曆本身並未被移走且其後之作用宛如其 他半等體元件的絕緣。該絕缘靥被供應著多個接觴窗，其 中有傅導元件Μ埋接至該等半導體元件。該等半等體元件 可經由這些傳導元件外部連接。 JP-A-1/184 28的英文摘要揭露一種如前述摘要說明所述 之方法，由該絕緣曆被供應著多個接觸窗及因此該等接觴 窗内的該等傳導元件在該絕緣靥由該巨量減少處理曝霣後 所供應。 一般而言•一光阻劑罩被供應在該絕緣靥上Μ在該絕緣 靥内形成該等接觸窗。一光阻劑靥因此被供應在該_露絕 緣曆上·在其後一光阻劑罩則被像化。該巳知方法的缺黏 是不能在該光學石版的處理期間使用排列整齊的罩供應於 該半導體晶片的第一側上，同時供懕該半導艚元件和該導 道在本側面上。一光阻單也應該被供應Κ提供該等傳 導元件於該等接觸窗内，因此該等排整的單也不能被用。 另外，不同於使用Μ形成該等半導體元件和該半導腰晶 片上的該等等體軌道之設備將為供應該等接觸窗和該等傅 所必須的。該等半導賭元件和該等導髑軌道及該絕 緣》被固定在上之該支持晶片則有一不同於該半導體晶片 的厚度。 本發明之目的係供應一方法，係可能使用相同的光學石 ___ - 5 - 本紙張尺度適用中國國家標隼（CNS ) Λ4規格（2丨Ο X 297公釐） (請先閱讀背面之注意事項再填寫本頁)
、1Τ 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（3 ) 版術設備和相同的排轚箪在該半等腰晶片的第一供上，其 是使用以形成在該半導艚晶片的第一供上之該等半導«元 件和該等等體軌道，也係用Μ形成該絕緣靥内的該等接觸 窗和形成該等傳導元件。 發明摘要所述之方法就是為了此目的•其特微在於在後 者被固定至該支持晶片之前•該絕缘層被供應著多愐接觸 窗且從該半等體晶片的第一側該等傳辱元件被供應於該等 接觴窗内。 該相同半辱鱷晶片被處理在其相同第一供如同在形成該 等半導體元件和該等等«軌道期間也用Μ提供該等接觸窗 於該絕緣層内及提供該等傅導元件。該相同的光學石版術 的設備和該等相同的排轚罩可被使用於此。本發明也根基 於此認知，係在該半導《晶片固定在該支持晶片上之前，供 應在該等接觴窗內的該等傅等元件在曝露該絕緣層的該巨 量減少處理期間將被曝露。然后因此曝II的該等傅等元件 使得該等半等«元件的外部連接為可能。 · 實際上•前述的固定該半等《晶片於該支持晶片上的所 有處理步驟可在與完成該刺餘步驟不同之空間完成之。前 者的步》必須在一相當潔淨的室内完成，而另剌餘步驟可 在無塵室内完成，因此所受的需求較不嚴苛。既然後者之 空間較一潔淨室便宜，本發明之方法可以較低成本完成之 〇 該等等«軌道和該等傳導元件可以一單一光學石版術的 步》形成之，假如在該絕緣層内的該等接觸窗完成後•一 一 6 — 本紙浪尺度適用中國國家標隼（CNS ) Μ規格（210Χ297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 A7 B7五、發明説明（4 ) 傳等層被沉澱在該半導體晶片的第一側上•之後該等等« 軌道和該等傳等元件則被形成。 較佳地，在該等等體軌道和該等傳導元件形成在該傳等 靥内和該基礎層内之後，該傳導曆則沉澱在一傳導基礎層 上。另外當該等導«軌道有一相當低的霣阻時，該基礎曆 和該傅導層的該等材料然後可被選擇Μ使得該傅導層在曝 露該絕緣層的遇程中可由該基礎層充分地保護。假如一由 矽製的半導《晶片與一半等«材料的矽暦被供應在上之氧 化矽絕緣層被使用•然后在曝霣該絕緣曆的β程中 > 矽則 被移走。然后當該氧化矽絕緣曆到達時，該巨量減少處理 必須停止。這可Μ用一般方法完成·如高堪擇性地在含氫 氧化鉀的蝕刻液内。假使那樣，該傳導層可非常有效地由 一钛、鎢或一鈦搏合金的基礎層保護。例如*在該基礎層 上供應鋁層或铝合金層使得形成具一較低霣阻之等道 為可能，此電阻是遠較形成於鈦、鎢或呔鎢合金之等《軌 道的電阻堪低。 在該傳等曆被沉澱之前，該等接觸窗也可供應著一輔助 層在其底端上。在曝露該絕缘曆的《程中•該傅導靥可由 •«助層來保護。使用如上之相同的半等《晶片，該輔助層 可由钛、鎢或钛_合金製成。或者•該輔助層也可從一非 傳等物質所製造。在此之例子係可使用氮化矽*其作用是 在含氫氧化鉀的蝕刻液内蝕刻期間當作一非常有效的蝕刻 停止劑。在該巨最滅少處理期間或之後•其必須曝Β該傳 等靨於該接觸窗内。 (請先閱讀背面之注意事項再填寫本頁) 一 7 一 本紙張尺度適用中國國家橾準（CNS > Λ4規格（210Χ 297公釐） A7 ______B7_ 五、發明説明（5) 該傳導層之曝《不僅是當該輔助層是由一絕緣材料所製 成•較佳也是當該輔肋層是由一傳導材料製成，且在該例 裡，其中該傳導層被供應在一傅等基礎曆上。在這些例子 裡*它可能之後從一材料如鋁或鋁合金製成該傅導層，在 其上一傳導等線藉著一般接合技術以為外部連接可被供應 〇 附圖之簡單說明 本發明可由相翮的園示做更詳盡的說明，其中： _1至圖6則Μ _解及横截面圈示本發明之方法的一些-步驟製造之半等體裝置的一部份；及 麵7至_ 10則Κ圖解及横截面圖示本發明較佳實施例之 方法的一些步驟製造之半等《裝置的一部份。 發明之詳细說明 圈1至圈6則以圖解及横截面圓示本發明之方法的一些 步驟製造之半導體裝置的一部份。製造起始於一供應在其 第一側2具一半導體材料層4 Κ置於一絕緣靥3上的約 7〇〇微米厚度的半等體晶片1 。在本例•一單晶矽半等» 經濟部中央標率局員工消費合作社印繁 I - - - - - . ------ --衣 I (請先閱讀背面之注意事項再填寫本頁) 晶片1被使用•其中烴由植入氧離子，一約0.4微米厚度 的氧化矽層3則被供應。在該氧化矽曆3上，有一約0.1 微米厚度的半導體材料靥，係由單晶矽4所製成的。然而 這對本發明是不重要的。該半等腰層或可是多晶或非晶的 半導«材料，也可Κ是非矽之半等《材料。該絕緣層也可 由非氧化矽的其他材料所製成。 多個半導«元件係以一般方法形成在該第一側2上。這 一 8 _ 本紙張尺度適用中國國家標準.（CNS ) Α4規格（W 〇 X 297公釐） Α7 Β7 j、發明説明（6 ) 些可以是不同的元件，如埸效電晶«和雙極轚晶«。在本 例*以一場效電晶體形成供應單一元件是為了清楚之緣故 。該矽曆4則是為了 K —般方法供應著一 P型摻雜•接著 再區分成多個互相絕緣島5 ，在本例因為該矽靥4則從該 等島5間的該絕緣層3所蝕刻掉。一場效電晶《被形成於 每~個島内。該矽層4則為此目的而供應著一閛極介質層 6 ，之後該矽層4則必須承受一般的熱氧化。然后一多晶 矽層7則被沉澱，其中一閛槿電極8則被形成。具有該作 動如一罩之該閛極轚極8 、源極9及汲極10則接著經由一- η型接雜劑植入而形成。最后，因此形成的電晶體則被一 婼緣氧化矽層11所覆董。 多個接觸窗12則供應於該氧化矽靥11內，之後多儸等體 軌道14則Μ —般方法在該半等《晶片1的該第一側2上形 成在一傅等層13内。 在該等等腰軌道14已被形成之後，該半導«晶片1 Μ其 第一側2被固定至一支持晶Η15。在本例•該半等《晶片 —-------i 衣------訂 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作杜印製 璃片該要如該屬 。 玻晶定不-。金以 的«固並膠15一可 度等麽身脂片是也 厚半什本樹晶以成 米該為15成持可製 微，是片合支也S 邂後就晶一該但緣 5之也持Κ至，絕 1.14這支可定的之 約道，該1固成鋁 1 軌度和片膠製化 至«015晶力所氧 定導20片腰克璃或 固等氏晶導亞玻， 16該攝持半的由的 層成過支該例是成 膠形超該。本例製 力在至至求如本綢 克。熱1箱或在由 亞15加片的膠15如 1 片需晶度脂片 ， 著晶不體邊樹晶板 藉持並導受氣抟持 1支1半承環支支 本紙張尺度適用中國國家榡牟（CNS ) Λ·4規格（2丨0X 297公釐） 經濟部中央標準局員工消費合作社印製 Α7 Β7 五'、發明説明（7 ) 大體而言，該支持晶片可容許有一不同於半導«晶片材料 的除脹係數。在順序的處理步驟期間，膨脹之差將很小， 且可由該膠合曆所容纳。 在該半導體晶片1已被固定在該支持晶片15之後•材料 從該半導體晶片被移走，並從第二側17移走直至該絕緣曆 3被曝K。為此目的•該第二側17首先被曝霉於一般的化 學楗械抛光處理直到該氧化矽絕緣曆3僅僅是幾激米遠· 在其上該層3則曝露在一含氳氣化鉀的蝕刻液内。該蝕刻 處理在該層3到達時將自動停止，該層之作動就如一姓刻-停止曆。 該氧化矽絕緣層3則供應著多届接觸窗18·其中連接至 該等半導》元件的多個傅等元件19則被供應，如圏示至該 霣晶體的該源極9 。根據本發明，在後者被固定至該支持 晶片15之前，該等接觸窗18和該等傳等元件19從該等半導 體晶片1的第一側2形成。在本例，該等接觸窗18則在該 等接觴窗12形成在該氧化矽曆11内之相同光學石販術的處 理步驟期間形成在該絕緣氧化矽曆3内。因此，使用Μ形 成該等接觸窗12的該等相同的排整罩（園未示）也可Κ使 用以形成該等接觸窗18。該等等體軌道14和該等傅導元件 19在本例被形成在一起和該相同的傅導靥13内。該等導» 軌道14和該等傅導元件19也可Μ—般方法和該相同光學石 版術處理步驟形成在一起。使用Μ形成該等接觸窗12和 18的該等排整罩則也可以為此目的被使用。 在該絕緣氧化矽靥3從該半導«晶Η1的第二側17已被 一 1 0 _ 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 、νβ 經濟部中央標準局員工消費合作杜印製 A7 B7 ____ 五、發明説明（8) 曝露，供懕在該等接觸窗18内的該等傅導元件19也會被曝 露。該等半導«元件，在本例的場效電晶鱷，也可Μ藉著 埴些曝露的傳導元件19而被接觸。在本例*埴也可Κ藏著 一般接合技術所供應之一接觸導線20有效施行。或者•也 可能由電鍍供應一外部連接在該等嚅Β傅導元件18上° 為供應那些外部接觸等線20，該支持晶片以一般方法區 分成多個各別區塊•如用鋸的*由是多涸分離半導體裝置 被形成。這些也各包含一個或數届半導體元件。在前例獲 得分立的半等Μ装置，在後側則聚集成半導體裝置。 前述的固定該半等«晶片1在該支持晶片15上的所有處 理步驟可被完成在一空間内，且不同於剌餘處理步驟完成 之空間。前者步驟是完成在一潔淨室内，另一些步驟則在 無屋室完成•因其要求較不嚴苛。結果，根據本發明的方 法可在一較低成本下完成。 _7圓示本方法較佳實施例的一階段，其中該傳導層 13被沉澱在一傳導基礎層21上，之後該等導體軌道14， 14Α和該等傳等元件19，19Α則形成在該傅導層13 (14和 19)和在該基礎靥（14Α#19Α)内。該基礎層21和該傳等 層13的該等材料可被選用使得該傅等層13在曝《該絕緣層 3的過程中被該基礎曆21迪當地保護，且另外該等傳等軌 逋14有一較低電阻。在此之本例，钛，辑或一钛鎢合金可 被埋為該基礎層21的材料。該氧化矽絕緣層3則曝露在一 具氫氧化鉀的蝕刻液内。該傅導層13被該基礎層21在該蝕 刻液内有效地保護。鋁或一鋁合金則被遵為該傅導層13的 一 11 — 本紙張尺度適用中國國家標隼（CNS ) Α4規格（21〇Χ 297公釐） (請先閱讀背面之注意事項再填寫本頁) ，vs Α7 Β7 五、發明説明（9) 材料。结果•該等導體軌道14有一電阻’且比由一形成在 钛、鉋、或钛餽合金層内的多倨等體軌道的罨阻堪低。 圔8則圖示本方法較佳簧腌例之一階段，其中在該傳等 層13被沉澱之前，該等接觸窗18被供應著一輔助層23在其 底部22上。此被完成係因一輔助層24被沉澱在該絕緣靥 11上及在該等接觸留12和18内，該_助層嫌後被一光阻罩 所覆Μ (圈未示）’該光阻罩也覆藎該窗18和圃繞著這窗 的一邊緣15。然後一牲刻處理完成，由是該輔助層未被覆 蓋的部份則被移走。因此該輔助曆2 3保留在該等接觸窗 18的底部22上。在該底部22已被覆蓋著該輔助層23後’該 傅導層13被沉澱，其中随後該等導《軌道14和該等傳等元 件19被形成。 經濟部中央標準局員工消費合作社印製 --------叫 -衣-- (請先閱讀背面之注意事項再填寫本頁) 在_露該闼缘層3的過程中•該傳導曆13被該輔助層 23所保護。在圓8内所描述之例，該輔助曆2 3和該傳導餍 13材料可完全獨立地被埋用；該輔助靥的材料使得它能有 效抗拒該氫氧化鉀蝕刻液，該傅導靥13的材料使得該導體 軌道14有一低電阻且將使與該等半等«元間有一好的接觸 。在此之本例，一輔助層23可由钛、鎢、或一钛鎢合金所 製成，及該傳辱層13可由鋁或一鋁合金所製成。在本例一 具厚度約〗0亳微米的輔助曆供應該等傳辱元件19— «當保 護。 9圖示本方法較佳簧施例之一階段，其中該輔助曆 26是由一非傅導材料所製成，如在本例一約2〇奄微米厚的 S化矽曆，其對在含氫氧化鉀蝕刻液内之蝕刻期間是一很 -12- 本紙張尺度適用中國國家標準（CNS ) Α4規格（2】〇Χ29*7公釐） 五、發明説明（10 ) 有效的胜 10所示， 可由一簡 在該氮氧 四氟化碳 當該輔 1 9或者也 之例子， 。此亦可 導層13， 外部連接 刻停止繭》 該等接觸窗 單方法完成 化鉀蝕刻液 電漿中完成 助層23是由 可選擇有利 當該等傳導 A7 B7 在該涵緣靥3 18内的該等傅 ，因為在該氧 _露期間或之後，如_ 導元件19也被曝R。這 化矽絕緣曆3已被曝露 内之後，一蝕刻處理是以·-般的二氧 一傳導材料所製成時，該等傅導元件 8所示*或如鼷7所示 在一傅導基礎雇19A上 能在這些例子裡從一材料如鋁或鋁合金製造該傅 在其上一傅等等線20可糴蓍一般接合技術供應為 地_ 31，如麵 元件19被形成 (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 13 本紙張尺度中HU家縣（CNS ) A4規格（21QX 297公釐）

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  1. 288193 ί! D8 六、申請專利範圍 1. 一種製造半導《装置之方法，由多届半等Μ元件和導》 (請先閱讀背面之注意事項再填寫本頁) 軌道被形成在一供應著半等《材料層於一絕緣靥上之半 導體晶片的一第一側上 > 在該半等體晶片Μ第一俩固定 至一支持晶Η之後，且在該材料從該半導體晶片被移走 •並從第二俩移走直至該絕緣層已被曝露之後，在此方 法中該絕緣層被供應著多儷接觸窗•其中多個傅導元件 被供應Μ連接至該等半等體元件*其特徴在於該絕緣層 被供應著多儷接觸窗及該等傅導元件從該半導體晶片的 第一側供應於接觸窗之内•在後者被固定至該支持晶Η-之前。 2. 根據申請專利範園第1項之方法，其特激在於在該等接 觸窗形成於該絕緣層内之後，一傅導層被沉澱在該半等 體晶片的第一側上*其中接著該等等《軌道和該等傳等 元件被形成。 3. 根據申請専利範圈第2項之方法·其特微在於在該等等 體軌道和該等傅等元件被形成於該傅等體内和該基礎層 内之後，該傅等材料曆沉《在一傳導基礎靥上。 4， 根據申講専利範圃第2項之方法，其特徽在於在該傅導 雇f沉澱之前，該等接觸窗被供應著一輔助靥於其底部上 Ο 5 · 根據申讅專利範園第3或4項之方法，其特徵在於在該 絕緣靥已被曝露之後，該等接觸窗内部的該傳導曆也 被曝露。 _______ ____ 一 1 4 一 本紙張尺度適用令國g|家標準（CNS )( 2⑴公董）
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