CN106031005A - 半导体模块 - Google Patents

半导体模块 Download PDF

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CN106031005A
CN106031005A CN201580009332.9A CN201580009332A CN106031005A CN 106031005 A CN106031005 A CN 106031005A CN 201580009332 A CN201580009332 A CN 201580009332A CN 106031005 A CN106031005 A CN 106031005A
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upper arm
distribution
underarm
diode
loss
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CN106031005B (zh
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龟山悟
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Toyota Motor Corp
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Toyota Motor Corp
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
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  • Inverter Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)

Abstract

本发明的半导体模块(2)具备高电位配线(300)、输出配线(400)、低电位配线(500)、上臂开关元件(110)、上臂二极管(120)、下臂开关元件(210)和下臂二极管(220)。上臂开关元件(110)的稳态损耗/开关损耗比率被形成为与下臂开关元件(210)的稳态损耗/开关损耗比率相比较小。另外，上臂二极管(120)的稳态损耗/开关损耗比率被形成为与下臂二极管(220)的稳态损耗/开关损耗比率相比较小。

Description

半导体模块
技术领域
本申请为2014年2月18日申请的日本专利申请特愿2014-028704的关联申请，并要求基于该日本专利申请的优先权，且将该日本专利申请所记载的全部内容作为构成本说明书的内容而进行援用。
本说明书中公开的技术涉及一种半导体模块。
背景技术
在日本特开2001-308263号公报(以下称为专利文献1)中公开了具有第一配线、第二配线、第三配线、被连接于第一配线与第二配线之间的上臂侧的半导体芯片和被连接于第二配线与第三配线之间的下臂侧的半导体芯片的半导体模块。第一配线、第二配线、第三配线、上臂侧的半导体芯片和下臂侧的半导体芯片被实施树脂模塑。各个半导体芯片包含开关元件以及二极管。
发明内容
发明所要解决的课题
在专利文献1的类型的半导体模块中，期望进一步的低损耗化。为了使这种半导体模块低损耗化，而需要开关元件与二极管的低损耗化。在这些元件中产生的损耗存在稳态损耗与开关损耗。但是，稳态损耗与开关损耗存在此消彼长的关系，从而难以同时减少两者。
用于解决课题的方法
本申请发明人发现，在具备上述类型的半导体模块的升降压电路中，大多情况下，在上臂中产生的损耗与在下臂中产生的损耗相比，稳态损耗的比例较高。因此，在本说明书中公开的一个半导体模块具有：第一配线；第二配线；第三配线；上臂开关元件，其被连接在第一配线与第二配线之间；下臂开关元件，其被连接在第二配线与第三配线之间；上臂二极管，其以第一配线被连接在阴极侧的方式而被连接在第一配线与第二配线之间；下臂二极管，其以第二配线被连接在阴极侧的方式而被连接在第二配线与第三配线之间。满足如下的条件中至少一个，即，(a)上臂二极管的稳态损耗/开关损耗比率与下臂二极管的稳态损耗/开关损耗比率相比较小；(b)上臂开关元件的稳态损耗/开关损耗比率与下臂开关元件的稳态损耗/开关损耗比率相比较小。
另外，上述(a)意味着，在使上臂开关元件与下臂开关元件在相同的电压条件下工作时，上臂二极管的稳态损耗/开关损耗比率与下臂二极管的稳态损耗/开关损耗比率相比较小。此外，上述(b)意味着，使上臂开关元件与下臂开关元件在相同的电压条件下工作时，上臂开关元件的稳态损耗/开关损耗比率与下臂开关元件的稳态损耗/开关损耗比率相比较小。
在上述的半导体模块中，如上述(a)以及(b)所记载的那样，在上臂中与在下臂中相比不易产生稳态损耗，并且在下臂中与在上臂中相比不易产生开关损耗。根据这样的结构，在开关损耗的比例较高的下臂中开关损耗被抑制，从而能够减少在下臂中产生的损耗的总量(即，稳态损耗与开关损耗的总量)。此外，根据这样的结构，在稳态损耗的比例较高的上臂中稳态损耗被抑制，从而能够减少在上臂中产生的损耗的总量。如此，通过在上臂与下臂中采用不同的特性的元件，从而能够减少半导体模块整体的损耗的总量。
上臂二极管的晶体缺陷可以与下臂二极管的晶体缺陷相比较少。
根据该结构，能够将上臂二极管的稳态损耗/开关损耗比率设为与下臂二极管的稳态损耗/开关损耗比率相比较小。
上臂开关元件以及下臂开关元件可以为IGBT。上臂开关元件的集电区的p型杂质浓度可以与下臂开关元件的集电区的p型杂质浓度相比较高。
根据该结构，能够将作为上臂开关元件的IGBT的稳态损耗/开关损耗比率设为与作为下臂开关元件的IGBT的稳态损耗/开关损耗比率相比较小。
在本说明书中公开的另一个半导体模块也具有：第一配线；第二配线；第三配线；上臂开关元件，其被连接在第一配线与第二配线之间；下臂开关元件，其被连接在第二配线与第三配线之间；上臂二极管，其以第一配线被连接在阴极侧的方式而被连接在第一配线与第二配线之间；下臂二极管，其以第二配线被连接在阴极侧的方式而被连接在第二配线与第三配线之间。上臂二极管的元件面积相对于上臂开关元件的元件面积的比率与下臂二极管的元件面积相对于下臂开关元件的元件面积的比率相比较大。
本申请发明人通过认真研究判断出在大多情况下，上臂二极管的通电量与下臂二极管的通电量相比较多，并且下臂开关元件的通电量与上臂开关元件的通电量相比较多。
关于这一点，在上述的半导体模块中，上臂二极管的元件面积相对于上臂开关元件的元件面积的比率与下臂二极管的元件面积相对于下臂开关元件的元件面积的比率相比较大。此处，“元件面积”包含在俯视观察时形成有开关元件、二极管的区域的面积。“元件面积”的用语也可以说是电流流通的区域的面积。即，与在下臂二极管中相比，在上臂二极管中能够流通大电流。此外，与在上臂开关元件中相比，在下臂开关元件中能够流通大电流。因此，在上述的半导体模块中，能够在使用时使各个元件适当地进行工作。
上臂开关元件与上臂二极管的合计元件面积只需同下臂开关元件与下臂二极管的合计元件面积相等即可。
根据该结构，能够将上臂侧的元件(即，上臂开关元件与上臂二极管)和下臂侧的元件(即，下臂开关元件与下臂二极管)形成为相同的大小。通过使用相同的大小的元件来形成半导体模块，从而模块内的元件以及配线的配置结构不会变得复杂。
上臂开关元件与上臂二极管可以被形成在第一半导体基板内。下臂开关元件与下臂二极管可以被形成在第二半导体基板内。
根据该结构，无需在不同的基板中设置上臂开关元件与上臂二极管。同样地，无需在不同的基板中设置下臂开关元件与下臂二极管。
第一半导体基板的基板面积可以与第二半导体基板的基板面积相等。
根据该结构，能够将上臂侧的元件与下臂侧的元件形成为相同的大小。通过使用相同的大小的元件来形成半导体模块，从而模块内的元件以及配线的配置结构不会变得复杂。
上臂开关元件、上臂二极管、下臂开关元件和下臂二极管可以被一体地实施树脂模塑。
根据该结构，能够抑制构成半导体模块的各个元件散乱的情况。
附图说明
图1为表示半导体模块的电路结构的图。
图2为表示半导体模块的电路结构的图。
图3为实施例1的上臂半导体装置以及下臂半导体装置的俯视图。
图4为实施例1的上臂半导体装置以及下臂半导体装置的剖视图。
图5为实施例3的上臂半导体装置以及下臂半导体装置的俯视图。
图6为实施例3的改变例的上臂半导体装置以及下臂半导体装置的俯视图。
图7为实施例3的参考例的上臂半导体装置以及下臂半导体装置的俯视图。
图8为改变例的上臂半导体装置的俯视图。
图9为改变例的上臂半导体装置的俯视图。
图10为改变例的上臂半导体装置的俯视图。
具体实施方式
(实施例1)
如图1所示，本实施例的半导体模块2具备高电位配线300、输出配线400、低电位配线500、上臂半导体装置100、下臂半导体装置200、蓄电池600和逆变器电路700。本实施例的半导体模块2被搭载在混合动力车或电动汽车中。上臂半导体装置100被连接在高电位配线300与输出配线400之间。下臂半导体装置200被连接在输出配线400与低电位配线500之间。逆变器电路700为用于对汽车的电动机进行驱动的电路。半导体模块2对蓄电池600的输出电压进行升压，并且向逆变器电路700进行供给。
高电位配线300、输出配线400、低电位配线500分别由具有导电性的配线部件，例如铝板形成。
蓄电池600的负极与低电位配线500连接。蓄电池600的正极与电抗器610的一端连接。电抗器610的另一端与输出配线400连接。此外，在输出配线400与低电位配线500之间，相对于蓄电池600与电抗器610的串联电路而并联地连接有滤波电容器620。
逆变器电路700被连接在高电位配线300与低电位配线500之间。此外，在高电位配线300与低电位配线500之间，主电容器710相对于逆变器电路700而并联连接。
上臂半导体装置100具备上臂开关元件110以及上臂二极管120。上臂开关元件110为IGBT。上臂开关元件110的集电极与高电位配线300连接，上臂开关元件110的发射极与输出配线400连接。上臂二极管120以高电位配线300被连接于阴极的方式，而被连接在高电位配线300与输出配线400之间。
下臂半导体装置200具备下臂开关元件210以及下臂二极管220。下臂开关元件210为IGBT。下臂开关元件210的集电极与输出配线400连接，下臂开关元件210的发射极与低电位配线500连接。下臂二极管220以输出配线400被连接在阴极侧的方式，而被连接在输出配线400与低电位配线500之间。
图1的电路使上臂开关元件110与下臂开关元件210交替地导通、断开。当在高电位配线300的电压与预定值相比较低的状态下，上臂开关元件110断开，且下臂开关元件210导通时，电流将在图1的箭头标记15所示的第一回流电路15中流通。由此，在电抗器610中蓄积有能量。接着，当上臂开关元件110导通，且下臂开关元件210断开时，电流将在图1的箭头标记16所示的电压供给电路16中流通。在该状态下，在电抗器610中向使输出配线400的电位上升的方向产生电动势。因此，将蓄电池600的输出电压与电抗器610的电动势重叠在一起所得到的高电压被供给至高电位配线300。由此，高电位配线300的电压被升压。
此外，当在高电位配线300的电压与预定值相比较高的状态下，上臂开关元件110断开，且下臂开关元件210导通时，电流将在图2的箭头标记17所示的第二回流电路17中流通。由此，在电抗器610中蓄积有能量。接着，当上臂开关元件110导通，且下臂开关元件210断开时，电流将在图2的箭头标记18所示的充电电路18中流通。在该状态下，在电抗器610中向使输出配线400的电位上升的方向产生电动势。因此，使输出配线400的电压降低与电抗器610的电动势相对应的量而得到的电压被施加于蓄电池600的正极。由此，蓄电池600被充电。
在本实施例中，如图3所示，上臂半导体装置100被形成在一张半导体基板10内。即，上臂半导体装置100为，在一张半导体基板10内具有上臂开关元件110与上臂二极管120的RC-IGBT(Reverse Conducting InsulatedGate Bipolar Transistor：反向导通型绝缘栅双极性晶体管)。如图3所示，在俯视观察半导体基板10的情况下，上臂开关元件110被设置在半导体基板10的中央附近，上臂二极管120被设置在上臂开关元件110的周围。另外，在图3中，省略了被形成在半导体基板10的表面上的层间绝缘膜以及表面电极的图示。
参照图4来对上臂半导体装置100的剖面结构进行说明。如上所述，上臂半导体装置100为，在半导体基板10中形成有上臂开关元件(IGBT)110与上臂二极管120的RC-IGBT。
上臂开关元件110内形成有n型的发射区20、p型的体区30、n型的漂移区40、n型的缓冲区70以及p型的集电区80。发射区20的上表面相对于表面电极60而欧姆接触。集电区80的下表面相对于背面电极90而欧姆接触。此外，在上臂开关元件110上形成有多个栅极沟槽32。在栅极沟槽32的内侧形成有被栅绝缘膜34覆盖的沟槽栅电极36。沟槽栅电极36的上表面被绝缘层38覆盖，从而与表面电极60绝缘。沟槽栅电极36在未图示的位置处与外部电连接。
上臂二极管120内形成有p型的阳极区50、n型的漂移区40、n型的缓冲区70以及n型的阴极区85。阳极区50的上表面相对于表面电极60而欧姆接触。阴极区85的下表面相对于背面电极90而欧姆接触。上臂二极管120内的漂移区40以及缓冲区70与上臂开关元件110内的漂移区40以及缓冲区70连续。此外，在上臂二极管120上也形成有与上臂开关元件110相同的多个沟槽栅电极36。
半导体基板10中存在通过氦离子被打入而形成的晶体缺陷区域44。在晶体缺陷区域44中，晶体缺陷密度与其周围的漂移区40相比较高。晶体缺陷区域44跨及上臂开关元件110与上臂二极管120而连续地形成。
在本实施例中，上臂半导体装置100的表面电极60与输出配线400连接，背面电极90与高电位配线300连接(参照图1)。
此外，下臂半导体装置200也具有与图3所示的上臂半导体装置100相同的俯视结构。即，下臂半导体装置200也为在一张半导体基板10内具有下臂开关元件210与下臂二极管220的RC-IGBT。在本实施例中，下臂半导体装置200被形成在基板面积与上臂半导体装置100相同的半导体基板10内。与上臂半导体装置100的情况相同，下臂开关元件210被设置在半导体基板10的中央附近，下臂二极管220被设置在下臂开关元件210的周围。
在本实施例中，上臂开关元件110的元件面积与下臂开关元件210的元件面积相等。同样地，上臂二极管120的元件面积与下臂二极管220的元件面积也相等。在本说明书中，“元件面积”是指，在俯视观察半导体基板10时，形成有开关元件、二极管的区域的面积。“元件面积”的用语也可以说是电流流通的区域的面积。因此，在本实施例中，上臂二极管120的元件面积相对于上臂开关元件110的元件面积的比率与下臂二极管220的元件面积相对于下臂开关元件210的元件面积的比率相等。此外，上臂开关元件110与上臂二极管120的合计元件面积同下臂开关元件210与下臂二极管220的合计元件面积相等。
此外，下臂半导体装置200的剖面结构与图4所示的上臂半导体装置100的剖面结构几乎相同。在图4中，对于下臂半导体装置200中的与上臂半导体装置100共同的要素使用相同的符号来进行表示。但是，在下臂半导体装置200的表面电极60与低电位配线500连接，背面电极90与输出配线400连接(参照图1)这一点上，与上臂半导体装置100不同。
在实施例1中，上臂开关元件110的集电区80的p型杂质浓度与下臂开关元件210的集电区80的p型杂质浓度相比较高。另外，在实施例1中，上臂二极管120内的晶体缺陷区域44中的晶体缺陷量与下臂二极管220内的晶体缺陷区域44中的晶体缺陷量大致相同。此处，“杂质浓度”的用语也可以为该区域中的平均杂质浓度。因此，例如当形成上臂开关元件110的集电区80时，与形成下臂开关元件210的集电区80时相比，被注入较多的p型杂质(例如磷)。因此，上臂开关元件110具有与下臂开关元件210相比不易产生稳态损耗，但却容易产生开关损耗的结构。即，假设在使开关元件110、210在相同的条件下工作的情况下，与在下臂开关元件210中相比，在上臂开关元件110中，稳态损耗较少，但开关损耗较多。
在图1以及图2所示的电路中，各个元件在如下的条件下进行工作，即，与在下臂中相比，在上臂中，容易产生稳态损耗，不易产生开关损耗的条件。即，在假设为开关元件110、210具有相同的特性的情况下，与在下臂开关元件210中相比，在上臂开关元件110中，稳态损耗变高，开关损耗变低。但是，在实施例1的结构中，如上所述，上臂开关元件110具有与下臂开关元件210相比不易产生稳态损耗的结构。因此，能够减少上臂开关元件110中的稳态损耗。此外，虽然上臂开关元件110具有容易产生开关损耗的结构，但在上臂开关元件110的工作条件下不太产生开关损耗。因此，在上臂开关元件110中产生的损耗的总量较少。
此外，由于在容易产生开关损耗的条件下工作的下臂开关元件210具有不易产生开关损耗的结构，因此能够减少开关损耗。此外，虽然下臂开关元件210具有容易产生稳态损耗的结构，但是在下臂开关元件210的工作条件下不太产生稳态损耗。因此，在下臂开关元件210中产生的损耗的总量较少。
如上文所说明的那样，根据实施例1的结构，能够减少在半导体模块2中产生的损耗的总量。
此外，在本实施例中，上臂开关元件110与上臂二极管120被形成在一张半导体基板10内。同样地，下臂开关元件210与下臂二极管220被形成在一张半导体基板10内。因此，在本实施例中，可以不将上臂开关元件110与上臂二极管120设置在不同的基板中。同样地，也可以不将下臂开关元件与下臂二极管设置在不同的基板中。
此外，在本实施例中，上臂开关元件110与上臂二极管120的合计元件面积同下臂开关元件210与下臂二极管220的合计元件面积相等。此外，在本实施例中，形成有上臂半导体装置100的半导体基板10的基板面积与形成有下臂半导体装置200的半导体基板10的基板面积相等。因此，能够使用相同大小的元件来形成半导体模块2，从而模块内的元件以及配线的配置结构不会变得复杂。
高电位配线300为“第一配线”的一个示例。输出配线400为“第二配线”的一个示例。低电位配线500为“第三配线”的一个示例。上臂二极管120(下臂二极管220)内的漂移区40、缓冲区70、阴极区85为“阴极区”的一个示例。形成有上臂半导体装置100的半导体基板10为“第一半导体基板”的一个示例。形成有下臂半导体装置200的半导体基板10为“第二半导体基板”的一个示例。
(实施例2)
在实施例2中，在上臂开关元件110与下臂开关元件210中，集电区80的p型杂质浓度大致相同。但是，在实施例2中，上臂二极管120内的晶体缺陷区域44的晶体缺陷量与下臂二极管220内的晶体缺陷区域44的晶体缺陷量相比较少。例如，在形成上臂二极管120内的晶体缺陷区域44时，与在形成下臂二极管220内的晶体缺陷区域44时相比，被打入较多的氦离子。对于其他的结构，实施例2与实施例1相同。
晶体缺陷区域44使二极管的开关损耗(在二极管进行反向恢复动作时产生的损耗)减少，另一方面，使二极管的稳态损耗增加。因此，晶体缺陷量较少的上臂二极管120具有与晶体缺陷量较少的下臂二极管220相比不易产生稳态损耗，容易产生开关损耗的结构。
在图1以及图2所示的电路中，各个元件在如下的条件下进行工作，即，与在下臂中相比，在上臂中，容易产生稳态损耗，不易产生开关损耗的条件。即，在假设二极管120、220具有相同的特性的情况下，与在下臂二极管220中相比，在上臂二极管120中，稳态损耗变高，开关损耗变低。但是，在实施例2的结构中，如上所述，上臂二极管120具有与下臂二极管220相比不易产生稳态损耗的结构。因此，能够减少上臂二极管120中的稳态损耗。此外，虽然上臂二极管120具有容易产生开关损耗的结构，但在上臂二极管120的工作条件下不太产生开关损耗。因此，在上臂二极管120中产生的损耗的总量较少。
此外，由于在容易产生开关损耗的条件下进行工作的下臂二极管220具有不易产生开关损耗的结构，因此能够减少开关损耗。此外，虽然下臂二极管220具有容易产生稳态损耗的结构，但在下臂二极管220的工作条件下不太产生稳态损耗。因此，在下臂二极管220中产生的损耗的总量较少。
如上文所说明的那样，根据实施例2的结构，能够减少在半导体模块2中产生的损耗的总量。
如上文所说明的那样，在实施例1中，上臂开关元件110的稳态损耗/开关损耗比率与下臂开关元件210的稳态损耗/开关损耗比率相比较小。在实施例2中，上臂二极管120的稳态损耗/开关损耗比率与下臂二极管220的稳态损耗/开关损耗比率相比较小。通过如实施例1、2那样对各个元件的稳态损耗/开关损耗比率进行设定，从而能够减少在半导体模块整体中产生的损耗的总量。
另外，也可以通过有别于实施例1、2的方法，而在上臂与下臂之间设置稳态损耗/开关损耗比率之差。此外，也可以在一个半导体模块2中采用实施例1、2双方的结构。
(实施例3)
在实施例3中，上臂开关元件110的集电区80的p型杂质浓度与下臂开关元件210的集电区80的p型杂质浓度大致相同。此外，上臂二极管120的晶体缺陷区域44的晶体缺陷量与下臂二极管220的晶体缺陷区域44的晶体缺陷量大致相同。但是，在实施例3中，如图5所示，上臂二极管120的元件面积相对于上臂开关元件110的元件面积的比率与下臂二极管220的元件面积相对于下臂开关元件210的元件面积的比率相比较大。如图5所示，在上臂半导体装置100中，在上臂开关元件110的周围形成有上臂二极管120。在下臂半导体装置200中，在下臂二极管220的周围形成有下臂开关元件210。对于其他的结构，实施例3与实施例1相同。另外，在实施例3中，上臂开关元件110与上臂二极管120的合计元件面积也同下臂开关元件210与下臂二极管220的合计元件面积相等。
如图5所示，在实施例3中，上臂半导体装置100以及下臂半导体装置200分别被形成在基板面积相同的半导体基板10内。因此，在本实施例中，上臂二极管120的元件面积与下臂二极管220的元件面积相比较大。即，与在下臂二极管220中相比，在上臂二极管120中能够流通大电流(即，允许电流较大)。此外，上臂开关元件110的元件面积与下臂开关元件210的元件面积相比较小。即，与在上臂开关元件110中相比，在下臂开关元件210中能够流通大电流(即，允许电流较大)。
在图1以及图2所示的电路中，与在下臂二极管220中相比，在上臂二极管120中流通有较大的电流。此外，与在上臂开关元件110中相比，在下臂开关元件210中流通有较大的电流。如上所述，在实施例3的结构中，上臂二极管120的允许电流较大，且下臂开关元件210的允许电流较大。因此，在实施例3的结构中，能够使各个元件更适当地工作。即，根据该结构，无需增大半导体模块2的尺寸，便能够将半导体模块2的各个元件的允许电流最优化。另外，在一个半导体模块2中，能够将实施例3的结构与实施例1、2一起采用。
此外，如图5所示，在实施例3中，在上臂半导体装置100中，在上臂开关元件110的周围形成有上臂二极管120。在下臂半导体装置200中，在下臂二极管220的周围形成有下臂开关元件210。在上臂半导体装置100中，流通有大电流的上臂二极管120成为最高温。在下臂半导体装置200中，流通有大电流的下臂开关元件210成为最高温。通过使成为高温的部分，即上臂二极管120以及下臂开关元件210从半导体基板10的中心偏离，从而能够高效地对上臂半导体装置100以及下臂半导体装置200进行冷却。因此，能够使上臂半导体装置100以及下臂半导体装置200的芯片尺寸小型化。
此外，作为实施例3的改变例，如图6所示，能够在流通有大电流的上臂二极管120以及下臂开关元件210上设置温度传感器130、230。通过在上臂半导体装置100与下臂半导体装置200中的流通有大电流从而成为高温的部分上设置温度传感器130、230，从而能够适当地对上臂半导体装置100以及下臂半导体装置200的芯片温度进行测量。
图7表示实施例3的参考例。如图7所示，在该参考例中，在上臂半导体装置100中，在流通大电流的上臂二极管120的周围形成有上臂开关元件110。在该参考例中，温度传感器130被设置在上臂二极管120的中心部(即，半导体基板10的中心部)处。同样地，在下臂半导体装置200中，在流通大电流的下臂开关元件210的周围形成有下臂二极管220。温度传感器230被设置在下臂开关元件210的中心部(即，半导体基板10的中心部)处。通过有意地在容易成为最高温的半导体基板10的中心部处配置流通大电流的元件(上臂二极管120、下臂开关元件210)，从而容易地实施由温度传感器130、230实现的温度监控。
以上，虽然对在本说明书中公开的技术的具体示例进行了详细说明，但这些只不过是示例，而并不对权利要求书进行限定。在权利要求书所记载的技术中，包括对上文所例示的具体示例进行了各种的改变、变更的内容。例如，也可以采用以下的改变例。
(改变例1)在上述的各个实施例中，如图3、图5所示，在俯视观察半导体基板10的情况下，上臂开关元件110被设置在半导体基板10的中央附近处，上臂二极管120被设置在上臂开关元件110的周围。上臂开关元件110与上臂二极管120的配置并不限定于上述的配置。例如，也可以如图8、图9、图10所示那样，在半导体基板10内，上臂开关元件110与上臂二极管120分别被分开设置在多个位置处。此外，上臂开关元件110与上臂二极管120也可以在半导体基板10内以相邻的方式被划分为两个而被配置。对于下臂开关元件210与下臂二极管220也相同。通常来说，只需上臂开关元件与上臂二极管的合计元件面积同下臂开关元件与下臂二极管的合计元件面积相等即可。
(改变例2)在上述的各个实施例中，形成有上臂半导体装置100的半导体基板10的基板面积与形成有下臂半导体装置200的半导体基板10的基板面积相等。并不限定于此，上臂半导体装置100的半导体基板10的基板面积与下臂半导体装置200的半导体基板10的基板面积也可以不同。
(改变例3)在上述的各个实施例中，上臂半导体装置100在一张半导体基板10内具有上臂开关元件110与上臂二极管120。同样地，下臂半导体装置200在一张半导体基板10内具有下臂开关元件210与下臂二极管220。并不限定于此，上臂开关元件110与上臂二极管120也可以被形成在不同的基板中。下臂开关元件210与下臂二极管220也可以被形成在不同的基板中。
(改变例4)在上述的各个实施例中，上臂开关元件110与上臂二极管120的合计元件面积同下臂开关元件210与下臂二极管220的合计元件面积相等。并不限定于此，上臂开关元件110与上臂二极管120的合计元件面积同下臂开关元件210与下臂二极管220的合计元件面积也可以不同。
(改变例5)在上述的各个实施例中，上臂开关元件110以及下臂开关元件210为IGBT。但是，开关元件并不限定于IGBT，例如也可以为MOSFET(Metallic Oxide Semiconductor Field Effect Transistor：金属氧化物半导体场效应晶体管)等任意的开关元件。
此外，本说明书或附图中所说明的技术要素通过单独或各种组合的方式来发挥技术上的有用性，并不限定于申请时权利要求所记载的组合。此外，本说明书或附图所例示的技术同时实现多个目的，并且实现其中一个目的本身便具有技术上的有用性。

Claims (8)

1.一种半导体模块，具有：
第一配线；
第二配线；
第三配线；
上臂开关元件，其被连接在所述第一配线与所述第二配线之间；
下臂开关元件，其被连接在所述第二配线与所述第三配线之间；
上臂二极管，其以所述第一配线被连接在阴极侧的方式而被连接在所述第一配线与所述第二配线之间；
下臂二极管，其以所述第二配线被连接在阴极侧的方式而被连接在所述第二配线与所述第三配线之间，
所述半导体模块满足如下的条件中的至少一个，即，
(a)所述上臂二极管的稳态损耗/开关损耗比率与所述下臂二极管的稳态损耗/开关损耗比率相比较小，
(b)所述上臂开关元件的稳态损耗/开关损耗比率与所述下臂开关元件的稳态损耗/开关损耗比率相比较小。
2.如权利要求1所述的半导体模块，其中，
所述上臂二极管的晶体缺陷与所述下臂二极管的晶体缺陷相比较少。
3.如权利要求1或2所述的半导体模块，其中，
所述上臂开关元件以及所述下臂开关元件为绝缘栅双极性晶体管，
所述上臂开关元件的集电区的p型杂质浓度与下臂开关元件的集电区的p型杂质浓度相比较高。
4.一种半导体模块，具有：
第一配线；
第二配线；
第三配线；
上臂开关元件，其被连接在所述第一配线与所述第二配线之间；
下臂开关元件，其被连接在所述第二配线与所述第三配线之间；
上臂二极管，其以所述第一配线被连接在阴极侧的方式而被连接在所述第一配线与所述第二配线之间；
下臂二极管，其以所述第二配线被连接在阴极侧的方式而被连接在所述第二配线与所述第三配线之间，
所述上臂二极管的元件面积相对于所述上臂开关元件的元件面积的比率与所述下臂二极管的元件面积相对于所述下臂开关元件的元件面积的比率相比较大。
5.如权利要求1至4中任意一项所述的半导体模块，其中，
所述上臂开关元件与所述上臂二极管的合计元件面积同所述下臂开关元件与所述下臂二极管的合计元件面积相等。
6.如权利要求1至5中任意一项所述的半导体模块，其中，
所述上臂开关元件与所述上臂二极管被形成在第一半导体基板内，
所述下臂开关元件与所述下臂二极管被形成在第二半导体基板内。
7.如权利要求6所述的半导体模块，其中，
所述第一半导体基板的基板面积与所述第二半导体基板的基板面积相等。
8.如权利要求1至7中任意一项所述的半导体模块，其中，
所述上臂开关元件、所述上臂二极管、所述下臂开关元件、所述下臂二极管被一体地实施树脂模塑。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111279476A (zh) * 2017-10-27 2020-06-12 日产自动车株式会社 半导体装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9793386B2 (en) * 2015-10-14 2017-10-17 Ford Global Technologies, Llc Multiple zone power semiconductor device
JP6540563B2 (ja) * 2016-03-15 2019-07-10 三菱電機株式会社 半導体装置
JP7268330B2 (ja) * 2018-11-05 2023-05-08 富士電機株式会社 半導体装置および製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002165439A (ja) * 2000-09-14 2002-06-07 Toyota Industries Corp スイッチ回路
CN101034526A (zh) * 2006-03-09 2007-09-12 株式会社日立制作所 等离子显示装置
CN102473645A (zh) * 2009-08-19 2012-05-23 松下电器产业株式会社 半导体元件、半导体装置以及功率变换器
CN102835017A (zh) * 2010-03-25 2012-12-19 松下电器产业株式会社 逆变器装置以及使用该逆变器装置的电气设备
JP2013038911A (ja) * 2011-08-08 2013-02-21 Toyota Motor Corp コンバータ

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2692765B2 (ja) 1989-12-22 1997-12-17 株式会社日立製作所 ダイオード及びｉｇｂｔとの並列回路とそのモジュール及びそれを用いた電力変換装置
JP2590284B2 (ja) 1990-02-28 1997-03-12 株式会社日立製作所 半導体装置及びその製造方法
JP2800780B2 (ja) 1996-05-31 1998-09-21 株式会社日立製作所 ダイオード及びｉｇｂｔとの並列回路とそのモジュール及びそれを用いた電力変換装置
JPH10108474A (ja) * 1996-09-27 1998-04-24 Denso Corp マルチレベルスイッチング式電力変換器
EP1148547B8 (en) 2000-04-19 2016-01-06 Denso Corporation Coolant cooled type semiconductor device
JP4192396B2 (ja) 2000-04-19 2008-12-10 株式会社デンソー 半導体スイッチングモジュ−ル及びそれを用いた半導体装置
CN100550383C (zh) * 2005-07-08 2009-10-14 松下电器产业株式会社 半导体装置和电气设备
JP2008061404A (ja) * 2006-08-31 2008-03-13 Daikin Ind Ltd 電力変換装置
JP5043445B2 (ja) * 2007-01-16 2012-10-10 三菱電機株式会社 半導体デバイスの製造方法
JP5086043B2 (ja) * 2007-11-30 2012-11-28 日立アプライアンス株式会社 電力変換装置および電力変換装置の制御方法
JP4988784B2 (ja) 2009-03-30 2012-08-01 株式会社日立製作所 パワー半導体装置
JP5333342B2 (ja) * 2009-06-29 2013-11-06 株式会社デンソー 半導体装置
JP5512377B2 (ja) 2010-04-28 2014-06-04 本田技研工業株式会社 回路基板
JP5341824B2 (ja) 2010-06-14 2013-11-13 日立オートモティブシステムズ株式会社 半導体装置
JP5634318B2 (ja) * 2011-04-19 2014-12-03 三菱電機株式会社 半導体装置
JP5874723B2 (ja) * 2011-05-18 2016-03-02 富士電機株式会社 半導体装置および半導体装置の製造方法
JP5456723B2 (ja) * 2011-06-20 2014-04-02 本田技研工業株式会社 燃料電池システム及び該システム搭載車両
JP2013051272A (ja) 2011-08-30 2013-03-14 Toyota Motor Corp 半導体装置
JP5626274B2 (ja) * 2012-06-29 2014-11-19 株式会社デンソー 半導体装置
JP5546664B2 (ja) 2013-03-15 2014-07-09 三菱電機株式会社 パワー半導体モジュール、電力変換装置および鉄道車両
DE112014001811B4 (de) * 2013-04-05 2024-07-25 Fuji Electric Co., Ltd. Halbleitervorrichtungsansteuerverfahren

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002165439A (ja) * 2000-09-14 2002-06-07 Toyota Industries Corp スイッチ回路
CN101034526A (zh) * 2006-03-09 2007-09-12 株式会社日立制作所 等离子显示装置
CN102473645A (zh) * 2009-08-19 2012-05-23 松下电器产业株式会社 半导体元件、半导体装置以及功率变换器
CN102835017A (zh) * 2010-03-25 2012-12-19 松下电器产业株式会社 逆变器装置以及使用该逆变器装置的电气设备
JP2013038911A (ja) * 2011-08-08 2013-02-21 Toyota Motor Corp コンバータ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111279476A (zh) * 2017-10-27 2020-06-12 日产自动车株式会社 半导体装置
CN111279476B (zh) * 2017-10-27 2023-10-17 日产自动车株式会社 半导体装置

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