CN1059219C - 含聚合微元成分的聚合物基材及其制作和使用方法 - Google Patents
含聚合微元成分的聚合物基材及其制作和使用方法 Download PDFInfo
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Abstract
本发明涉及修整工件表面用的加工制品或抛光垫板,例如抛光或修平半导体器件。该制品包括了渗透有许多聚合微元成分的聚合物基材,每个聚合微元成分中包含有空腔。该制品具有工作表面和贴近工作表面的内层表面。当该制品与工作环境接触时,该制品工作表面上的聚合微元成分的刚度低于嵌在内层表面中的聚合微元成分。当该制品的工作表面在使用过程中磨损时,该垫板的工作表面可以不断得到再生。
Description
本发明涉及渗透有聚合微元成分的聚合物基材及其制作和使用方法,特别是涉及对各种物料(如半导体器件)进行抛光用的制品。
在抛光、修平和其它操作中(本发明的制品也可用在这些操作中)常用的聚合物基材或抛光垫板会经受各种各样的操作条件,这些条件影响对基材物料的选择。例如,被抛光工件性质的变化,抛光速率和压力,抛光操作中产生的升温,以及操作中所用的任何抛光浆液的性质都会影响对基材的选择。
由于对聚合与混和过程以及最终垫板产品的切割成型的控制不精确,通常的聚合物抛光垫板的质量往往变化不定,因而赋予被抛光工件的抛光特性(如表面性质,物料去除速率以及修平速率)在各批垫板之间往往变化很大。
通常的抛光垫板一般由多层夹层材料或层叠基材构成,垫板的整个厚度中物理性质是不均匀的。广泛用于半导体器件抛光的典型层状垫板的例子为商品名Politex Supreme(超级抛光)的垫板,这种垫板可从特拉华州纽沃克市的罗得尔公司(Rodel Incorporat-ed)购得。这种典型的超级抛光垫板由若干层构成,其中包括厚度为1至2毫米的牢固而有弹性的一个多孔底层,该底层由聚酯毡片与聚氨酯粘合剂构成。在此底层上面层压有厚度为约0.05至0.3毫米的海绵状弹性微孔聚氨酯层。顶层由竖式聚氨酯结构组成,其中带有垂直的锥形孔,孔的锥形朝垫板顶部方向逐渐变细。顶层非常柔软,多孔而且有弹性。在通常的抛光操作中,这种层状垫板的顶层很快磨损。当顶层磨损并暴露出下面各层时,垫板的抛光性能就会改变,其后果是抛光速率不均匀而且在工件表面上产生不均一的抛光特性。
通常的抛光垫板一般具有纹理结构的表面。垫板的“微观结构”就是加工后垫板所固有的微观本体纹理结构。影响常用垫板的静态形态或微观本体纹理结构的若干因素有:工作表面的性质或结构(例如波纹、孔洞、皱折、肋条、缝隙、凹陷、隆起和缺口),各个构成零件或加工图形的大小,形状,以及分布、出现频率或间隔。在一般抛光垫板中,垫板的微观结构大多是不规则的,这是加工过程固有的因素所造成的结果。由于加工过程中的参数非常多,迄今为止很少试图对这些参数(如孔的大小、形状和分布)进行控制。可能影响垫板纹理结构的其它特性(所提到的只是一部分)有硬度、弹性、厚度、渗透性和阻抗性能。
“小纹理结构”的垫板上带有中间尺寸的加工纹理,这种加工纹理可以用激光或者在垫板材料中导入空气或气体而产生。
“大纹理结构”,或大尺寸加工纹理可用下列方法加在垫板的工作表面上:例如压花、割片、打孔和/或切削。在通常的抛光垫板中,单个大加工纹理结构或构成零件的间隔和/或尺寸一般大于5毫米。这类加工纹理的间隔和尺寸一般+分规则而且重复。
通常的抛光垫板可包含各种固体粒子,例如氧化铈、氧化钛、氧化铝、碳酸钡、玻璃粉和纤维、硅藻土、铁丹、碳酸钙、金刚石和碳。一般来说,这类粒子的机械混合和分布都设有很好的控制。
希望能有一种用于抛光和其它操作的底材,其中添加剂的颗粒分布可在分子规模上加以优化。还希望能有一种聚合物底材,其中的底材表面可自行再生,而且当表面与工件接触时底材表面不发生很大变化。如下所述的抛光底材也将是很有利的:这种底材在微观规模上具有一系列的硬度变化,而且可以使之具有小尺寸或大尺寸加工纹理结构以便有助于去除抛光操作中的废物(废液、磨屑等)。
简要地说,本发明的一个方面涉及修整工件表面用的加工制品。该制品由渗透有许多微元成分的聚合物基材构成。每个聚合微元成分中间包含有空腔空间。该制品具有工作表面和贴近工作表面的内层表面。当该制品接触工作环境时,制品工作表面上的聚合微元成分的刚度比嵌在内层表面中的聚合微元成分要低一些。
本发明的又一个方面是指修整工件表面用的加工制品。该制品由渗透有许多聚合微元成分的聚合物基材构成。每个聚合微元成分中间包含有空腔空间。该制品具有带纹理构造的工作表面和贴近工作表面的内层表面。当该制品接触工作环境时,制品工作表面上的聚合微元成分的刚度比嵌在内层表面中的聚合微元成分要低一些。
本发明的另一个方面是指通过与加工制品接触而修平的半导体器件。该制品由渗透有许多聚合微元成分的聚合物基材构成。每个聚合微元成分中间包含有腔腔空间。该制品具有工作表面和贴近工作表面的内层表面。当该制品接触工作环境时,制品工作表面上的聚合微元成分的刚度比嵌在内层表面中的聚合微元成分要低一些。该半导体器件包含有与所述制品的工作表面相接触而得以修平的表面。
本发明的再一个方面是指与工作环境相接触的制品的工作表面的再生方法。该制品用于修整工件的表面。该方法包括以下步骤:提供由聚合物基材构成的制品;用许多聚合微元成分渗入该聚合物基材,每个聚合微元成分中间包含有空腔空间,其中所述的制品具有工作表面和贴近工作表面的内层表面;使位于工作表面附近的至少一部分聚合微元成分的一部分壳层开口,这样开口的聚合微元成分的刚度就比嵌在内层表面中的聚合微元成分要低一些。
本发明的还有一个方面是指制品工作表面的再生方法。该制品用于修整工件的表面。该方法包括以下步骤:提供由聚合物基材构成的制品;用许多聚合微元成分渗入该聚合物基材,每个聚合微元成分中间包含有空腔空间,其中所述的制品具有工作表面和贴近工作表面的内层表面;使所述的制品与工作环境接触;使位于工作表面附近的至少一部分聚合微元成分的一部分壳层发生化学变化,这样就使化学变化后的聚合物微元成分的刚度低于嵌在内层表面中的聚合微元成分。
本发明的另外一个方面是指降低聚合微元成分有效刚度的方法,这些聚合微元成分位于与工作环境接触的制品的一部分工作表面上。该方法包括下列步骤:提供由聚合物基材构成的制品;用许多聚合微元成分渗入该聚合物基材,每个聚合微元成分中间包含有空腔空间,其中所述的制品具有工作表面和贴近工作表面的内层表面;使工作表面中包含所述聚合微元成分的部分具有纹理结构。
本发明的又一个方面是指用制品修平半导体器件表面的方法。该方法包括以下步骤:提供由聚合物基材构成的制品;用许多聚合微元成分渗入该聚合物基材,每个聚合微元成分中间包含有空腔空间,其中所述的制品具有工作表面和贴近工作表面的内层表面;该制品与工作环境接触并使制品工作表面上的聚合微元成分的刚度低于处在内层表面中的聚合微元成分;使半导体器件的表面与该制品的工作表面接触。
结合附图阅读本说明书可以更好地理解以上的概述和下面有关较好实施方案的详细描述。为了说明本发明,图中示出目前认为较好的实施方案,但是应该理解,本发明并非限于所披露的具体方法和手段。在附图中:
图1为根据本发明所述的制品的示意截面图;
图2为根据本发明所述的制品的另一种实施方案的示意截面图;
图3为根据本发明所述的制品的又一种实施方案的示意截面图,其中制品工作表面上的微元成分在与工作环境接触时已发生膨胀;
图4为修平速率与典型半导体器件表面上部件之间间距的函数关系图;
图5为根据本发明所述的小纹理结构垫板的另一种实施方案的示意图;
图6为沿线段6-6截取的图5中垫板的部分放大截面图;
图7为根据本发明所述的大纹理结构垫板的另一种实施方案的示意图;
图8为沿线段8-8截取的图7中垫板的部分放大截面图;
图9为根据本发明所述的分片图案小纹理结构垫板的另一种实施方案;
图10为根据本发明所述的制品的比重与微球流动速率的函数关系条块图;
图11为用于对本发明所述制品工作表面上的一部分微元成分壳层进行冲击和穿剌的装置的示意图。
参见附图,其中相同的数字始终指示相同的成分,在图1至3,图5至9和图11中表示出根据本发明所述的加工制品的各种实施方案,在图中一般标为代号10,110,210,310和410。
制品10通常宜为图片或抛光垫板12,恰如图5和图7所示,但具有本领域一般技术水平的人员都知道,譬如说垫板12也可以按需要呈大致的方形,长方形,或任何合适的形状。
本发明的制品10等等可以自身用作抛光垫板,或者用作抛光操作中的底材,该操作中用抛光浆液提供对下列工件的所需要的表面加工:半导体器件、硅器件、晶体、玻璃、陶瓷、聚合塑性材料、金属、石料或其它表面。用本发明的制品10等等制成的抛光垫板12可与润滑剂、冷却剂和各种研磨浆液一起使用,这一些对本领域熟练人员都是熟知的,而且很容易在市场上购得。这类浆液的典型成分包括液体介质(如水或油);磨料(如氧化铝、碳化硅、二氧化硅、氧化铈和石榴石);碱;酸;盐;表面活性剂和/或取决于工件性质的其它物料。
制品10等可用于通过抛光操作修整工件(未在图中示出)的表面(亦未示出),可以提到的这类操作有研磨、修平、磨光或加工成形。待抛光工件宜由脆性物质构成,例如石英、硅、玻璃,电子和光学底材,以及高密度多组分电子器件。所述的工件可以是带有多层聚硅氧烷、热氧化物和金属材料的半导体器件(未示出),其中的每一层在沉积上去下一层之前都可进行修平。
正如图1所示,制品10由聚合物基材14构成,该基材最好是对于抛光和修平操作中常用的水质流体浆液来说是不透性的。所述的聚合物基材14可由下列物料构成:聚氨酯,三聚氰胺,聚酯,聚砜,聚乙酸乙烯酯,氟代烃等,以及它们的混合物,共聚物和接枝聚合物。具有本领域一般技术水平的人员都会理解,在本发明的主旨和范围内,凡是具有足够的韧性和刚度以耐受抛光操作中的磨损的任何其它聚合物均可使用。目前较倾向于该聚合物基材14由氨基酯聚合物构成。所述的氨基酯聚合物宜由聚醚基的液体氨基酯生成,例如可从康
狄格州密特尔伯里市的Uniroyal化学公司购得的商品名为Adiprene系列的产品氨基酯。较适用的液体氨基酯含有约9%至约9.3%(重量)的自由异氰酸酯。在符合本发明主旨及范围的条件下,其它含异氰酸酯的产品和预聚物也可以采用。
所述液体氨基酯宜为如下类型:它能与多官能胺、二胺、三胺,或多官能羟基化合物,或混合官能度的化合物(如处于氨基酯/脲交联网络中的羟基/胺类)反应以形成脲键联和固化的/交联的聚合物网络。目前倾向于该液体氨基酯和4,4’-亚甲基-双〔2-氯苯胺〕(“MOCA”)反应,后者可从密歇根州阿德里安市的安德逊发展公司(Anderson Development Co.)以产品名Curene442购得。
正如图1中所示,聚合物基材14用许多聚合微元成分16渗透。至少一部分聚合微元成分宜大致呈挠性。适用的聚合微元成分包括无机盐、糖类以及水溶性树胶和树脂。这类聚合微元成分的例子有聚乙烯醇、果胶、聚乙烯吡咯烷酮、羟乙基纤维素、甲基纤维素、羟丙基甲基纤维素、羧甲基纤维素、羟丙基纤维素、聚丙烯酸、聚丙烯酰胺、聚乙二醇、聚羟基醚丙烯酸酯、淀粉、马来酸共聚物、聚环氧乙烷、聚氨酯,以及以上物质的各种组合。该微元成分16可以化学改性以通过例如支化、封端和交联作用而改变其溶解度、溶胀性和其它性质。
目前倾向于每个聚合微元成分16的平均直径小于约150微米,平均直径为约10微米更好。具有本领域一般技术水平的人员都能理解,微元成分的平均直径是可以变化的,可以根据需要用尺寸相同或不同的微元成分16或者不同种类的微元成分16的混合物渗入聚合物基材14中。
目前倾向于聚合微元成分之间间隔为约1微米至约100微米。聚合微元成分16宜通过高剪切混合而使之基本上均匀地分布在整个聚合物基材14中。在已反应的氨基酯聚合物的粘度变得过高以致微元成分不能与聚合物混合物充分混和之前,将所得的复合混合物转入常见的模具中。具有本领域一般技术水平的人员都知道,对于不同的热固性塑料和固化剂而言,不同温度下的这一低粘度窗口区间是可变的。所得混合物在模具中凝胶化15分钟左右。根据温度以及聚合物基材和微元成分的选择等因素不同,胶凝时间亦可变化。然后将组合物在约93.3至107.2℃下固化约4至6小时,冷却至室温(约21.1℃),除了其它因素之外,固化温度可根据聚合物基材以及所用微元成分的类型而变化。
所得制品10从模具中取出并通过切割、切片等做成所需厚度,加工成形为抛光垫板12。具有本领域一般技术水平的人员都知道,模制的组合物可根据本发明切片、切割或另行加工成形以做成任何所需的厚度或形状。
根据预计的应用或操作,至少一部分聚合微元成分16的形状大致可为球形,如图1中所示。这类微球宜为中空的,每个微球具有厚度约为0.1微米的壳层。
正如图1所示,每个聚合微元成分16中包含有空腔22。正如图3所示,至少若干聚合微元成分16中宜包含有多个空腔22。每个空腔22通常宜(但并非必须)包含压力高于大气压的气体以利于维持微元成分16’和16的结构完整性,这两种微元成分分别位于聚合物基材14的工作表面18和内层表面24上。
正如图11所示,所述的聚合微元成分可以具有可渗透的或可穿剌的壳层20,因此可使微元成分16’中的空腔22对工作环境开放。
正如图1所示,在本发明的一种较好的实施方案中,当与工作环境(未示出)或抛光浆液接触时,处于工作表面18上的至少一部分聚合微元成分16’发生软化。例如水溶性的纤维素醚(如甲基纤维素)在与水质抛光浆液中的水接触时就会溶解。
正如图1所示,在另一种较好的实施方案中,在与工作环境接触时位于工作表面18上的至少一部分聚合微元成分16’会发生膨胀。例如长链纤维素醚与水质抛光浆液中的水接触会发生溶胀。
正如图1至图3所示,制品10具有工作表面18和贴近工作表面18的内层表面24。工作表面18的厚度宜为约5微米至约60微米。在大致垂直于工作表面18的主平面(未示出)的方向上,制品10的厚度宜在约300微米至约400微米之间。
本发明的一个优点是,当制品10与工作环境接触时制品10的工作表面18上的聚合微元成分16’的刚度低于嵌在内层表面24中的聚合微元成分16。而且刚度较低的聚合微元成分16’对聚合物基材14中围绕低刚度微元成分的那一部分15所提供的支承力也较小,这样就降低了聚合物基材的围绕部分15的有效刚度。所以在制品10中至少形成了两级硬度,其工作表面18一般要比内层表面24软一些。
本发明的另一个优点是,当所述制品的工作表面磨损时(例如由于与工作表面或工作环境接触),贴近工作表面18的内层表面24就成为新的工作表面,从而连续不断地重新形成两级硬度,这就使工件抛光更加均匀一致,垫板12的磨损也更加均衡。
现在参照下面的具体的、说明性的、非限制性的实施例对本发明的不同方面作进一步描述和解释。
实施例1
将2997克Uniroyal公司生产的Adiprene L-325聚醚基液体氨基酯与768克Curene442(4,4’-亚甲基-双〔2-氯苯胺〕,“MOCA”)在约150°F下混合以制备聚合物基材。在此温度下,该氨基酯/多官能胺混合物的使用期限约为2.5分钟(“低粘度窗口区间”)。
在这一低粘度窗口期间,在3450转/分的转速下将69克Ex-pancel 551 DE中空聚合微球掺入上述聚合物混合物中,采用的是Rodel公司生产的高剪切掺和与混合设备使微球大致均匀地分布在聚合物混合物中。将该混合物在低粘度窗口期间转入常规的模具中,使之胶凝化约15分钟。
将型模随即放入固化烘箱中(例如可从Koch烘箱公司购得的烘箱)。所述混合物在烘箱中约93.3℃温度下固化约5小时。然后断开烘箱电源,让混合物在烘箱中冷却约4至6小时,直到模制的制品10的温度约为21.1℃(室温)。接着将模制的制品切割成形为抛光垫板。据认为在所得的抛光垫板12中微球之间的平均距离为约75微米至约300微米之间。
如图4所示,其中嵌有Expancel微球的厚度为0.51mm的聚氨酯垫板的修平速率(微米-1,在图中以方形表示)为无微球的类似的聚氨酯垫板的速率(在图中以圆形表示)的四倍多,比较条件是这两种垫板均用于修平典型的半导体器件,器件上带有间隔约为1毫米的零件或芯片。换言之,图4表明,根据本发明用嵌入有微元成分的聚氨酯垫板修平器件可比无微元成分时快四倍多。
如图10所示,模制制品的比重随微球流动速率的增大而减小。一般来说,垫板比重宜为约0.75至约0.8,这相当于Expancel微球的流动速率约为53克/分。
实施例2
将2997克Uniroyal公司生产的Adiprene L-325氨基酯与768克CureneTM 442 MOCA混合,再在高剪切条件下将所述的氨基酯聚合物与87克粉末状部分乙酰化的聚乙烯醇混合以制备聚合物基材,所说的聚乙烯醇可从宾夕法尼亚州阿仑顿Air Prod-ucts and chemicals公司购得。在低粘度窗口期(2.5分钟)内,以实施例1制品的类似方法将混合物倾注入型模,胶凝化,在约107.2℃下在烘箱中固化约6小时,冷却至室温。据信由于氨基酯和MO-CA氨基基团的反应要快得多,所以聚乙烯醇的OH基团与液体氨基酯的异氰酸根基团之间基本上不发生反应。
实施例3
将3625克Adiprene L-213与930克CureneTM 442 MOCA混合,以类似于实施例1的方法制备聚合物基材。在低粘度窗口期(约2.5分钟)内将58克果胶粉末(可从纽约州塔卡霍市的Free-man工业公司购得)与氨基醌聚合物进行高剪切混合使果胶粉末均匀分布在整个氨基酯混合物中。在低粘度窗口期(2.5分钟)内将所得的氨基酯/果胶混合物倾注入型模,凝胶化,在107.2℃下固化约6小时并冷却,处理方法与实施例1中所述相似。
实施例4
将2997克Adiprene L-325和65克聚乙烯吡咯烷酮粉末(可从新泽西州帕西派尼市的BASF化学公司或怀恩市的GAF化学公司购得)混和约30秒钟生成均匀混合物以制备聚合物基材。在约100-108.9℃温度下使768克CureneTM442 MOCA熔化并与氨基酯/聚乙烯吡咯烷酮混合物进行高剪切混和,在低粘度窗口期内(即在过掉约2.5分钟之前)将其倾注入型模中。所得混合物凝胶化,在约107.2℃下加热约6小时,冷却,切割成抛光垫板,所用的方法类似于实施例1中所述。
实施例5
将3625克Adiprene L-213与930克CureneTM 442 MOCA混合以制备聚合物基材。在低粘度窗口期内将65克白色自由流动的羟乙基纤维素(可从康
狄格州邓伯里市联合碳化物化学和塑料公司购得)与氨基酯混合物混和。羟乙基纤维素不溶于有机溶剂但可溶于热水或冷水中。随后以类似于实施例1中所述的方法处理该复合混合物。
在图5至图9所示的其它变通实施方案中,制品10的工作表面18可以进一步包含小尺寸或大尺寸图案或纹理构造26,其中包括凹陷和/或隆起的部分或者加工图形28。在至少一部分工作表面18上可用机械加工纹理的方法形成纹理结构26,例如对工作表面18进行机床加工、压花、车削、研磨、型模复制和激光加工。具有本领域一般技术水平的人员都知道,纹理结构26可以通过多种其它机械加工或化学方法形成,例如蚀刻法。
通过使工作表面18纹理化,高达50%或更多的表面积会暴露出来以利于除去抛光过程中的废渣。此外,工作表面18的纹理化通过使较多数量的微元成分16’接触工作环境而增强了抛光作用。纹理结构26可按需要而形成各种各样的图案、外形、槽、螺旋线、射线、点阵或任何其它需要的形状。使垫板12的工作表面18纹理结构化以微观规模提供一系列的硬度变化。例如,可使加工图形28形成锥体或刀片状,除了较硬的内层表面之外,还具有较硬的芯部和较软的外表面。
加工图形28的间隔宜在约0.1毫米至约10毫米之间,深度宜在约1毫米至约10毫米之间。一般来说,希望加工图形28第一维方向的长度在聚合微元成分16平均直径的约1000倍以下。还希望加工图形28的深度在聚合微元成分16平均直径的约2000倍以下。
正如图5和图6所示,工作表面18可包含小纹理结构,其中包括宽度在约1000微米至5毫米之间的加工图形28。在图5和图6中所示的小纹理结构为同心圆图案,但是具有本领域一般技术水平的人员都知道,这种小纹理结构可以是螺旋线或其它图案,包括前面所讨论过的那些图案。
正如图7和图8所示,工作表面1 8可包含大纹理结构,其中包括加工图形28,每个加工图形28的宽度大于约5毫米。如图7和图8所示,该纹理结构大致为方形网栅格,但是具有本领域中一般 技术水平的人员都知道,可使该纹理结构成为任何所需的图案,包括前述的那些图案。
大纹理结构和小纹理结构可用常见的机械加工方法形成,如压花、车削、研磨、印模复制、激光加工,以及具有本领域一般技术水平的人员所熟知的其它方法。
实施例6
使用标准车床和单点式刀具切削图5至图8所示的工作表面18,具体做法是将工作表面18真空吸装在车床或铣床的转台上,然后在该表面上叠加圆形或方栅格形图案。用装有成套切削刀具或带有规则分隔锯齿的特制切削梳的普通水平铣床加工工作表面18使成所需图案。
正如图5所示,在抛光垫板上机械加工出环形小纹理结构以形成齿节距为1.397毫米(0.055英寸)的槽纹,每个槽纹的深度为0.356毫米(0.014英寸)。槽纹形状为朝垫板内径方向成60度倾斜的梯形丝扣,如图6所示。
图7和图8所示的方栅格大纹理结构28是在水平铣床上加工的,所产生的是带有宽0.813毫米(0.032英寸),深0.635毫米(0.025英寸)槽纹的方块形,这些槽纹界定出边长为6.35毫米(0.025英寸)的加工图形28。
正如图9所示,工作表面18还可以包含有小纹理结构,其中包括用二氧化碳激光形成的宽度在约1000微米至5毫米之间的加工图形28。这种微小纹理结构宜按分片图案形式在工作表面18上生成。这里所定义的“分片图案”是指重复出现的图案,图案中包含重复出现的各种加工图形,这些加工图形彼此不同。分片图案可用确定性或非确定性数学公式生成,例如Koch岛和湖分片图案的Gosper Island方案(“Gosper图案”)(如图9所示)。适用的分片模型包括圆形、球形和硬干酪裂孔形,但是具有本领域一般技术水平的人员可以理解,需要时可依据本发明采用其它适用的分片图案。分片图案宜为无序的或随机的。
实施例7
正如图9所示,用常用的连续波输出功率100瓦的二氧化碳激光在抛光垫板12上加工出槽纹或小纹理结构。选择额定功率、输出和激光束聚焦参数使切削出的槽纹的深度为约0.458毫米(0.018英寸),宽度小于约0.127毫米(0.005英寸)。小纹理结构为前述的Koch岛和湖分片图案的Gosper Island变通方案。用电子方法将分片图案的图象读入并编程存入常用的计算机数值控制器中,该控制器控制激光束的运动以在垫板12的工作表面18上形成分片图案。使用吸着罩以防止蒸汽残迹积聚在垫板上。吸着罩还减少了槽纹边缘处附带的少量熔化现象。
另外,或者附加地,还可以将隔离的“凸平台”图案压花到工作表面18上以形成小纹理结构。例如用常规的30吨压机以约25吨的压力将小纹理结构压花在垫板12的工作表面18上。可以加热以增强压花效果。
现在来总体介绍一下采用如本发明所述的制品10等按照本发明对半导体器件表面进行修平的方法。
参照图1至图3,该方法一般包括的起始步骤为提供由聚合物基材14构成的制品10或110。聚合物基材14用许多聚合微元成分16渗入。提供聚合物基材14以及用微元成分16渗入基材14的细节已在前面讨论,有关于此的进一步论述可以认为是既不必要,也不具有限制性。制品10或110的工作表面18宜加工成纹理结构以形成加工图形28,这样可以提供增大的工作表面积并使微元成分16接触工作环境,如果工作表面18基本上是平的,这些微元成分一般就露不出来。
该方法还包括这样一个步骤,即让制品10或110的至少一部分工作表面18与工作环境接触,从而使制品10或110工作表面18上的聚合微元成分16’的刚度低于处在邻近的内层表面24中的聚合微元成分16。例如,至少一部分位处工作表面18附近的聚合微元成分16的部分壳层20可通过下列方法而打开:用削片、研磨、切割和穿剌等操作中的至少一种作用于壳层20的一部分,或者用化学方法改变或软化壳层20的一部分。这样就使工作表面18上的一部分聚合微元成分16’的刚度低于处在内层表面24中的微元成分16。有关如何使工作表面18上的聚合微元成分16’的刚度降低的细节已在前面讨论,可以认为进一步有关于此的讨论既非必要亦无限制性。
该方法还包括这样一个步骤,即让半导体器件(未示出)的表面(亦未示出)与所述制品的至少一部分工作表面18相接触,从而使半导体器件的表面充分修平。像具有本领域一般技术水平的人员所熟知的那样,制品10或抛光垫板12可附着在常用的抛光机上。工作表面18的取向宜大致平行于待修平的半导体器件的表面,工作表面可按要求例如作线性或圆周形滑动接触运动,从而使半导体器件的表面得以修平或研磨。
在与半导体器件表面滑动接触过程中,垫板12的工作表面18会受到磨损,这时部分内层表面24暴露出来,内层表面中的微元成分16受到研磨或化学变化或软化作用并形成新的工作表面18,其物理性质与前已磨损的工作表面相似。因此与半导体器件表面相接触的工作表面18基本上是连续再生的,从而对半导体器件表面提供了均一的修平或抛光作用。
现在总体上介绍一下对本发明所述制品的工作表面18按本发明进行再生的方法。
参照图11,该方法一般包含以下起始步骤:提供由聚合物基材14所构成的制品410或垫板12,用许多聚合微元成分16渗入基材14中。形成制品10的细节已在前面详尽讨论,可以认为有关于此的进一步讨论既不必要亦无限制性。
该方法还包括如下步骤:使位于工作表面18附近的至少一部分聚合微元成分16的壳层20中至少有一部分被打开,这样打开的微元成分16’的刚度就低于处在内层表面24中的微元成分16。打开聚合微元成分的步骤可以包括使微元成分16的每个壳层20的一部分受到下列四种操作中至少一种的作用:削片、研磨、切割和穿剌。正如图11所示,工作表面18上微元成分16’的壳层20可用冲击一穿孔复合装置30穿剌,它的一部分以剖面形式示于图11中。装置30可用任何刚度足以穿剌工作表面18及微元成分16的材料构成,例如不锈钢、铝和其它金属。装置30包括许多尖利刀具或针32用以穿剌位于工作表面18附近的聚合微元成分16的至少一部分壳层20。
除了针32之外,装置30还包括至少一个,最好是许多个垫板34以防止针32穿透工作表面18过深。针32宜穿剌工作表面18至深度约为60微米,但是具有本领域一般技术水平的人员都理解,装置30的穿剌深度当需要时可以是大于或小于60微米的任何深度。例如可用较长的针32穿剌工作表面18至深度大于60微米。
掌握本领域一般技术的人员都会理解,需要时可以一次或多次打开微元成分16或者穿剌垫板12。
在另一种实施方案中,位于工作表面18附近的聚合微元成分16的壳层20的至少一部分可以通过工作环境使之发生化学变化或软化,这样一来,工作表面18上发生部分变化的聚合微元成分的硬度低于嵌在内层表面24中的聚合微元成分16。例如,聚合微元成分16可由包含甲基纤维素或羟丙基甲基纤维素的水溶性纤维素醚形成,它们在与含水的工作环境接触时至少会部分溶解。
根据以上介绍可见,本发明包括修整工件(如半导体器件)表面用的加工制品以及下列三个方法,即减小位于上述制品部分工作表面上的聚合微元成分的有效刚度的方法;使这种制品的工作表面再生的方法;以及用这种制品修平半导体器件表面的方法。本发明制品可用于更快速而均匀的抛光或修平某种基材或其它工件。
本领域的熟练技术人员将能理解,在不脱离实施方案中所包含的广义发明概念的前提下,可以对上面介绍的实施方案作很多其它改变。因此应该理解,本发明并非局限于所披露的特定实施方案,本发明是要按所附的权利要求书中所定义的那样包括本发明主旨及范围之内的所有修改变通方案。
Claims (34)
1.用于修整工件表面的加工制品、所述的制品由渗透有许多聚合微元成分的聚合物基材构成,每个聚合微元成分中包含有空腔,至少一部分所述的聚合微元成分通常呈挠性,所述的聚合微元成分基本均匀地分布在整个所述的聚合物基材中,所述的制品具有工作表面和贴近所述工作表面的内层表面,其中所述的制品与工作环境接触时,该制品所述工作表面上的聚合微元成分的刚度低于嵌在所述内层表面中的聚合微元成分。
2.根据权利要求1所述的制品,其中所述的聚合物基材由聚氨酯聚合物构成。
3.根据权利要求1所述的制品,其中位于所述工作表面上的至少一部分所述的聚合微元成分在与所述的工作环境接触时发生软化。
4.根据权利要求1所述的制品,其中位于所述工作表面上的至少一部分所述的聚合微元成分在与所述的工作环境接触时发生膨胀。
5.根据权利要求1所述的制品,其中至少若干所述的聚合微元成分中包含有多个空腔。
6.根据权利要求1所述的制品、其中所述的空腔中包含有压力高于大气压的气体。
7.根据权利要求1所述的制品,其中每个所述的聚合微元成分的平均直径小于约150微米。
8.根据权利要求7所述的制品,其中每个所述的聚合微元成分的所述的平均直径为约10微米。
9.根据权利要求1所述的制品,其中所述的聚合微元成分的间隔为约1微米到约100微米。
10.根据权利要求1所述的制品,其中至少一部分所述的聚合微元成分的形状大致呈球形。
11.根据权利要求1所述的制品,其中至少若干所述的聚合微元成分为中空微球,每个微球的壳层厚度约为0.1微米。
12.根据权利要求1所述的制品。其中至少一部分所述的聚合微元成分具有可渗透壳层,因此可使空腔对所述的工作环境开放。
13.根据权利要求1所述的制品,其中所述的聚合微元成分包含选自以下一组物质中的至少一种物质:聚乙烯醇,果胶、聚乙烯基吡咯烷酮、羟乙基纤维素、甲基纤维素、羟丙基甲基纤维素、羧甲基纤维素、羟丙基纤维素、聚丙烯酸、聚丙烯酰胺、聚乙二醇、聚羟乙醚丙烯酸酯、淀粉、马来酸共聚物、聚环氧乙烷和聚氨酯。
14.根据权利要求1所述的制品、其中所述的工作表面的厚度为约5微米至约60微米。
15.根据权利要求1所述的制品,其中所述制品沿大致垂直于所述工作表面的主平面的方向的厚度在约300微米至约400微米之间。
16.根据权利要求1所述的制品。其中所述的工作表面还包含有微纹理结构,其中包括宽度小于约1000微米的加工图形。
17.根据权利要求1所述的制品,其中所述的工作表面还包含有小纹理结构,其中包括宽度在约1000微米至约5毫米之间的加工图形。
18.根据权利要求1所述的制品。其中所述的工作表面还包含有大纹理结构,其中包括宽度大于约5毫米的加工图形。
19.根据权利要求1所述的制品,其中所述的工作表面还包含有纹理结构,其中包括许多加工图形,每个所述的加工图形间隔约0.1毫米至约10毫米,其深度为约1毫米至约10毫米。
20.根据权利要求1所述的制品,其中所述的工作表面还包含有纹理结构,其中所包括的加工图形沿第一维方向的长度比所述聚合微元成分平均直径的约1000倍小
21.根据权利要求1所述的制品,其中所述的工作表面还包含有纹理结构,其中所包括的加工图形的深度比所述聚合微元成分平均直径的约2000倍小。
22.用于修整工件表面的加工制品,所述制品由渗透有许多聚合微元成分的聚合物基材构成,每个聚合微元成分中包含有空腔,所述制品具有带纹理结构其中包含加工图形的工作表面和贴近所述工作表面的内层表面,其中所述制品与工作环境接触时,处于该制品所述工作表面上的聚合微元成分的刚度低于嵌在所述内层表面中的聚合微元成分。
23.通过与加工制品接触而得到修平的半导体器件,所述制品由渗透有许多聚合微元成分的聚合物基材构成,每个聚合微元成分中包含有空腔,所述制品具有工作表面和贴近所述工作表面的内层表面,其中所述制品与工作环境接触时,处于该制品所述工作表面上的聚合微元成分的刚度低于嵌在所述内层表面中的聚合微元成分,由此,所述的半导体器件含有通过与所述制品的所述工作表面接触而得到修平的表面。
24.使接触工作环境的制品的工作表面再生的方法,所述制品用于修整工件的表面,该方法包括以下步骤:
提供由聚合物基材构成的制品;
用许多聚合微元成分渗入所述的聚合物基材中,每个聚合微元成分中包含有空腔,其中所述的制品具有工作表面和贴近所述工作表面的内层表面;
使处于所述工作表面邻近的聚合微元成分的壳层至少有一部分打开,这样就使所述的开放的聚合微元成分的刚度低于嵌在所述内层表面中的聚合微元成分。
25.根据权利要求24所述的方法,其中使所述聚合微元成分的所述壳层打开的步骤中还包括以下操作中的至少一种:对所述微元成分的所述壳层的一部分进行割片、研磨、切削和穿孔。
26.使制品工作表面再生的方法,所述制品用于修整工件的表面,该方法包括以下步骤:
提供由聚合基材构成的制品;
用许多聚合微元成分渗入所述的聚合物基材中,每个聚合微元成分中包含有空腔,其中所述的制品具有工作表面和贴近所述工作表面的内层表面;
使所述制品与工作环境接触;
使处于所述工作表面邻近的聚合微元成分的壳层至少有一部分发生化学变化,这样就使所述的发生了部分变化的聚合微元成分的刚度低于嵌在所述内层表面中的聚合微元成分。
27.降低聚合微元成分有效刚度的方法,这些微元成分处于与工作环境相接触的制品的部分工作表面上,该方法包括以下步骤:
提供由聚合物基材构成的制品。
用许多聚合微元成分渗入所述的聚合物基材中,每个聚合微元成分中包含有空腔,其中所述的制品具有工作表面和贴近所述工作表面的内层表面;
使包含所述聚合微元成分的该工作表面的所述部分纹理结构化。
28.根据权利要求27所述的方法,其中包括使所述工作表面的所述部分微纹理结构化步骤。
29.根据权利要求27所述的方法,其中包括使所述工作表面的所述部分小纹理结构化步骤。
30.根据权利要求27所述的方法,其中包括使所述工作表面的所述部分大纹理结构化步骤。
31.根据权利要求27所述的方法,其中使所述工作表面的所述部分纹理结构化的步骤中还包括对所述工作表面的所述部分施行下列操作中的至少一种:机械加工、压花、车削、研磨、印模复制和激光加工。
32.根据权利要求27所述的方法,其中包括使所述工作表面的所述部分形成分片图案的步骤。
33.根据权利要求27所述的方法,其中包括使所述工作表面的所述部分形成无序分片图案的步骤。
34.利用加工制品修平半导体器件表面的方法,该方法包括以下步骤:
提供由聚合物基材构成的制品;
用许多聚合微元成分渗入所述的聚合物基材中,每个聚合微元成分中包含有空腔,其中所述的制品具有工作表面和贴近所述工作表面的内层表面;
使所述制品与工作环境接触以使所述制品的所述工作表面上的聚合微元成分的刚度低于处在所述内层表面中的聚合微元成分;
使所述半导体器件的所述表面与所述制品的所述工作表面接触。
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US93216192A | 1992-08-19 | 1992-08-19 | |
US07/932,161 | 1992-08-19 |
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EP (2) | EP0656031B1 (zh) |
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CN (1) | CN1059219C (zh) |
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DE (2) | DE69319435T2 (zh) |
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- 1993-06-21 TW TW82104869A patent/TW264493B/zh not_active IP Right Cessation
- 1993-08-02 EP EP19930918581 patent/EP0656031B1/en not_active Expired - Lifetime
- 1993-08-02 DE DE1993619435 patent/DE69319435T2/de not_active Expired - Lifetime
- 1993-08-02 EP EP97120317A patent/EP0829328B1/en not_active Expired - Lifetime
- 1993-08-02 DE DE1993632490 patent/DE69332490T2/de not_active Expired - Lifetime
- 1993-08-02 JP JP6506309A patent/JP3013105B2/ja not_active Expired - Lifetime
- 1993-08-02 AU AU47984/93A patent/AU4798493A/en not_active Abandoned
- 1993-08-02 WO PCT/US1993/007256 patent/WO1994004599A1/en active IP Right Grant
- 1993-08-02 SG SG1996008436A patent/SG43335A1/en unknown
- 1993-08-02 KR KR1019950700607A patent/KR100191227B1/ko not_active IP Right Cessation
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1994
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1997
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1999
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2002
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2004
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Cited By (2)
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CN102686362A (zh) * | 2009-12-30 | 2012-09-19 | 3M创新有限公司 | 包括分相共混聚合物的抛光垫及其制备和使用方法 |
US9162340B2 (en) | 2009-12-30 | 2015-10-20 | 3M Innovative Properties Company | Polishing pads including phase-separated polymer blend and method of making and using the same |
Also Published As
Publication number | Publication date |
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EP0829328A3 (en) | 1998-12-09 |
SG43335A1 (en) | 1997-10-17 |
WO1994004599A1 (en) | 1994-03-03 |
AU4798493A (en) | 1994-03-15 |
US20050221741A1 (en) | 2005-10-06 |
DE69332490T2 (de) | 2003-09-25 |
TW264493B (zh) | 1995-12-01 |
EP0829328B1 (en) | 2002-11-13 |
US5900164A (en) | 1999-05-04 |
US20030068960A1 (en) | 2003-04-10 |
KR950703019A (ko) | 1995-08-23 |
US20040224142A1 (en) | 2004-11-11 |
JP3013105B2 (ja) | 2000-02-28 |
EP0656031A4 (en) | 1995-07-26 |
DE69319435D1 (de) | 1998-08-06 |
US6439989B1 (en) | 2002-08-27 |
EP0656031B1 (en) | 1998-07-01 |
DE69319435T2 (de) | 1999-02-25 |
JPH08500622A (ja) | 1996-01-23 |
EP0656031A1 (en) | 1995-06-07 |
US5578362A (en) | 1996-11-26 |
JP2008238399A (ja) | 2008-10-09 |
KR100191227B1 (ko) | 1999-06-15 |
US6903021B2 (en) | 2005-06-07 |
US6899611B2 (en) | 2005-05-31 |
MY114512A (en) | 2002-11-30 |
CN1082567A (zh) | 1994-02-23 |
DE69332490D1 (de) | 2002-12-19 |
EP0829328A2 (en) | 1998-03-18 |
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