CN1055195A - 防锈干膜润滑剂 - Google Patents

防锈干膜润滑剂 Download PDF

Info

Publication number
CN1055195A
CN1055195A CN90104159.9A CN90104159A CN1055195A CN 1055195 A CN1055195 A CN 1055195A CN 90104159 A CN90104159 A CN 90104159A CN 1055195 A CN1055195 A CN 1055195A
Authority
CN
China
Prior art keywords
dry film
film lubricant
antirust
lubricant
fluoride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN90104159.9A
Other languages
English (en)
Other versions
CN1018844B (zh
Inventor
于刚
聂明德
党鸿辛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lanzhou Institute of Chemical Physics LICP of CAS
Original Assignee
Lanzhou Institute of Chemical Physics LICP of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lanzhou Institute of Chemical Physics LICP of CAS filed Critical Lanzhou Institute of Chemical Physics LICP of CAS
Priority to CN90104159.9A priority Critical patent/CN1018844B/zh
Priority to US07/830,559 priority patent/US5242863A/en
Publication of CN1055195A publication Critical patent/CN1055195A/zh
Publication of CN1018844B publication Critical patent/CN1018844B/zh
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/763Polycrystalline semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/764Air gaps
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/128Proton bombardment of silicon
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/96Porous semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Lubricants (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

本发明属于固体润滑剂,用于经常接触盐雾和潮 湿气氛的设备的润滑与防锈。本发明的特点是选用 酚醛环氧树脂、环氧树脂、丁腈橡胶作为粘结剂,润滑 剂则由二硫化钼及氟化稀土组成,将三氧化二锑或碱 式亚磷酸铅作为防锈添加剂,再加入固化剂等组成防 锈干膜润滑剂,干膜润滑剂加入有机溶剂中制成喷 剂,喷涂在部件表面上并经加热固化后成为粘结牢 固,结构致密的固体薄膜,具有良好的耐磨损性能、低 摩擦系数和优异的防腐蚀能力。

Description

本发明是一种具有防锈功能的干膜润滑剂,属于固体润滑剂。它适用于飞机、汽车、印刷、复印、建筑、纺织、冶金以及军事武器的有关零件的润滑,尤其适用于露天搁置或经常接触盐雾船舶、海军飞机以及钻井平台等的设备的润滑与防锈。
为减少机械运动造成的摩擦对偶的磨损和动力消耗,人们通常以添加润滑油脂等方式减小摩擦和降低磨损。在一些不宜使用润滑油脂的工况环境下,干膜润滑剂已很好地解决了诸如辐照、真空、高低温、失重等环境下的润滑问题。但在某些特殊工况和环境中如海洋、露天等,防腐和防锈问题比较突出,一般的干膜润滑剂由于不具备这样的功能,使得干膜润滑剂的使用寿命大大下降。美国专利3223626为此叙述了一种粘结型干膜润滑剂,用于防腐,其组成中含有石墨,而石墨易与金属底材起电化学反应,从而致使器件易遭受腐蚀。美国专利3314885在前者基础上作了改进,其组份中不含石墨,采取加入碱式亚磷酸铅以提高干膜的防腐蚀作用。但该专利以环氧树脂作为粘结剂,使干膜较脆、耐水性也差,限制了它的使用范围。
本发明的目的在于克服上述现有技术中的缺点而提供一种润滑、防锈、抗磨损性能均好的干膜润滑剂并同时提供干膜的制备方法。
本发明的目的可通过如下措施来实现:
干膜润滑剂由粘结剂、固体润滑剂、防锈添加剂、固化剂等组成。粘结剂为酚醛环氧树脂、丁腈橡胶和环氧树脂。二硫化钼和氟化稀土为固体润滑剂。三氧化二锑或碱式亚磷酸铅为防锈添加剂。干膜润滑剂中各组分的重量百分比为:酚醛环氧树脂5~25%、环氧树脂0~22%、丁腈橡胶0~20%、二硫化钼40~60%、氟化稀土1~10%、三氧化二锑0~8%、碱式亚磷酸铅0~10%。为了使粘结剂在成膜时形成相互交联的体型结构,应在干膜润滑剂中加入酸酐、胺、双腈胺、间苯二酚等固化剂,干膜润滑剂中固化剂含量为5~15%(重量)。
选用酚醛环氧树脂、环氧树脂和丁腈橡胶作为粘结剂,能使干膜的粘结强度、柔韧性和耐磨性得到充分保证。
固体润滑剂除了加入最常用的二硫化钼外还加入耐磨性很好的氟化稀土。三氧化二锑和碱式亚磷酸铅的加入使干膜防锈性能增加。故本发明的干膜润滑剂具有极好的承受负荷能力、摩擦系数低、耐磨性能好,并且有优异的防锈性能。
本发明适用于一般的轴承、齿轮、涡轮涡杆、齿条、滑块、活塞、销轴等部件的润滑。尤其适于露天搁置机械的润滑,如建筑机械,也适于经常接触海水盐雾的海军装备(如飞机、舰艇)、海上井台以及经常处于酸、碱等蒸汽环境的化工设备的润滑与防锈。
本发明的上述配方中粘结剂、固体润滑剂、防锈添加剂等在未制成干膜前都是粉状固体或粘稠液体。因此,在制备干膜时,需将其制成干膜喷剂进行喷涂,就是把配方中的固体颗粒分散于分散介质中。按本发明的配方,将粉末状物料加入分散介质中,通过充分研磨后,制成浆状物喷剂。分散介质选用有机溶剂,即丁酮、丁醇、丙酮、甲苯的混合液,加入量为配方物料的4~5倍(重量)。分散介质的组成为:丁酮10~35%、丁醇10~40%、丙酮10~40%、甲苯10~25%(重量百分含量),之所以选用此四种溶剂,是充分考虑了成膜时间、强度等因素。
本发明选用的氟化稀土,可以是氟化镧、氟化铈、氟化钕等,也可以是混合稀土氟化物,但最好选用氟化铈。
本发明所用的固化剂为酸酐、胺、双腈胺、间苯二酚、邻苯二甲酸酐等,最好选用邻苯二甲酸酐。
本发明选用的酚醛环氧树脂,软化点小于70℃,环氧值大于等于0.46。环氧树脂软化点为12~20℃,环氧值0.41~0.47,平均分子量为450。丁腈橡胶中丙烯腈含量在37.2~38.5%之间,分子量为3000~10000。
本发明所用的二硫化钼纯度大于98%,过325目筛孔后网上残余物小于0.5%,粒度在5微米以下,三氧化二锑、碱式亚磷酸铅、氟化稀土均通过300目筛孔。
本发明的干膜润滑剂按最佳实施例制得的产品的主要技术指标列于下表:
Figure 901041599_IMG1
*  在Timken试验机上,2.5米/秒,32公斤下
本发明的干膜润滑剂适合喷涂在各种碳钢、不锈钢、合金钢,铜、铝及其合金、铸铁等材质的机加工表面和研磨表面,也可喷涂在经喷砂、喷丸、磷化、阳极化、钝化的金属材料工件表面。
本发明可以通过如下措施来实施:
按本发明配方称取二硫化钼、氟化稀土、研磨至所需的粒度,然后加入部分分散介质中充分混合,称取酚醛环氧树脂、环氧树脂和丁腈橡胶加入剩余部分的分散介质中,使其溶化,和前面的配料相混合,研磨半小时左右,然后加入固化剂(酸酐、胺、双腈胺、间苯二酚、邻苯二甲酸酐等),搅拌均匀即为干膜润滑喷剂。制好的喷剂按常规方法将其喷涂在工件上,待其挥发掉有机溶剂(分散介质)后,在100±3℃下固化半小时,然后在204±2℃下固化2小时(指以邻苯二甲酸酐为固化剂,其他固化剂的最后固化温度一般在140~160℃),即在工件上形成干膜。
本发明实施例如下:
例1.
酚醛环氧树脂  8%  环氧树脂  12%
丁腈橡胶  9.5%  二硫化钼  52.5%
氟化铈  6%  三氧化二锑  6%
邻苯二甲酸酐  6%
例2.
酚醛环氧树脂  12%  环氧树脂  15%
二硫化钼  44%  氟化铈  8%
三氧化二锑  5%  碱式亚磷酸铅  7%
邻苯二甲酸酐  10%
例3.
酚醛环氧树脂  15%  环氧树脂  9%
丁睛橡胶  4%  二硫化钼  47%
氟化镧  8%  三氧化二锑  7%
双氰胺  10%
例4
酚醛环氧树脂  17%  环氧树脂  8%
丁腈橡胶  5%  二硫化钼  60%
氟化镧  3%  三氧化二锑  2%
双氰胺  5%
例5.
酚醛环氧树脂  15%  环氧树脂  9%
二硫化钼  55%  氟化铈  6%
三氟化二锑  8%  邻苯二甲酸酐  7%
例6
酚醛环氧  16%  丁腈橡胶  14%
二硫化钼  55%  氟化镧  4%
三氧化二锑  4%  邻苯二甲酸酐  7%
以上实施例配方中混合溶剂的加入量为配方物料总重量的4~5倍。

Claims (7)

1、一种防锈干膜润滑剂,其特征是由
酚醛环氧树脂  5~25
环氧树脂      0~22
丁腈橡胶      0~20
二硫化钼      40~60
氟化稀土      1~10
三氧化二锑    0~8
碱式亚磷酸铅  0~10
固化剂        5~15
(重量百分含量)组成,其中固化剂为酸酐,双腈胺、间苯二酚、邻苯二甲酸酐等,最好是邻苯二甲酸酐。
2、如权利要求1所述的干膜润滑剂,其特征是氟化稀土可以是氟化镧、氟化铈、氟化钕,最好选用氟化铈。
3、如权利要求1所述的防锈干膜润滑剂,其特征是酚醛环氧树脂的软化点小于70℃,环氧值大于等于0.46。
4、如权利要求1所述的防锈干膜润滑剂,其特征是环氧树脂的软化点12~20℃,环氧值为0.41~0.47。
5、如权利要求1所述的防锈干膜润滑剂,其特征是丁腈橡胶中丙烯腈含量在37.2~38.5%之间,分子量为3000~10000。
6、如权利要求1所述的防锈干膜润滑剂,其特征是二硫化钼纯度大于98%,粒度在5微米以下,三氧化二锑、氟化稀土均通过300筛孔。
7、一种防锈干膜润滑剂的制备方法,在干膜粉末状物料中加入分散介质制成喷剂进行喷涂,其特征是分散介质加入量是干膜润滑剂的4~5倍,分散介质为丁酮、丁醇、丙酮、甲苯的混合液,其组成(重量百分含量)为:丁酮10~35、丁酮10~40、丙酮10~40、甲苯10~25。
CN90104159.9A 1990-06-02 1990-06-02 防锈干膜润滑剂 Expired CN1018844B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN90104159.9A CN1018844B (zh) 1990-06-02 1990-06-02 防锈干膜润滑剂
US07/830,559 US5242863A (en) 1990-06-02 1991-06-07 Silicon diaphragm piezoresistive pressure sensor and fabrication method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN90104159.9A CN1018844B (zh) 1990-06-02 1990-06-02 防锈干膜润滑剂

Publications (2)

Publication Number Publication Date
CN1055195A true CN1055195A (zh) 1991-10-09
CN1018844B CN1018844B (zh) 1992-10-28

Family

ID=4878422

Family Applications (1)

Application Number Title Priority Date Filing Date
CN90104159.9A Expired CN1018844B (zh) 1990-06-02 1990-06-02 防锈干膜润滑剂

Country Status (2)

Country Link
US (1) US5242863A (zh)
CN (1) CN1018844B (zh)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0624900A2 (en) * 1993-05-10 1994-11-17 Delco Electronics Corporation Method of micro-machining an integrated sensor on the surface of a silicon wafer
CN1120882C (zh) * 2000-09-23 2003-09-10 中国科学院兰州化学物理研究所 工业齿轮蜗轮用润滑油复合添加剂
CN100340645C (zh) * 2000-08-29 2007-10-03 长春汽车材料研究所 乳化型拉延防锈润滑剂
CN100413616C (zh) * 2005-02-28 2008-08-27 合肥波林新材料有限公司 一种齿轮油泵粉末冶金侧板
CN104120001A (zh) * 2014-08-07 2014-10-29 福建省将乐三华轴瓦股份有限公司 一种润滑剂及其用途
CN104804841A (zh) * 2015-05-08 2015-07-29 苏州锴诚缝制设备有限公司 一种润滑剂及其制备方法
CN112058611A (zh) * 2020-09-08 2020-12-11 中国科学院兰州化学物理研究所 一种采用激光织构化处理发动机轴套的方法

Families Citing this family (125)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1027011C (zh) * 1990-07-12 1994-12-14 涂相征 一种硅梁压阻加速度传感器及其制造方法
JP3315730B2 (ja) * 1991-08-26 2002-08-19 マイクロリス、コーパレイシャン ピエゾ抵抗半導体センサ・ゲージ及びこれを作る方法
DE69313337T2 (de) * 1992-04-17 1998-01-02 Terumo Corp Infrarotsensor und Verfahren für dessen Herstellung
JP3352118B2 (ja) * 1992-08-25 2002-12-03 キヤノン株式会社 半導体装置及びその製造方法
DE4314888C1 (de) * 1993-05-05 1994-08-18 Ignaz Eisele Verfahren zum Abscheiden einer ganzflächigen Schicht durch eine Maske und optionalem Verschließen dieser Maske
US5387803A (en) * 1993-06-16 1995-02-07 Kulite Semiconductor Products, Inc. Piezo-optical pressure sensitive switch with porous material
JPH0723539A (ja) * 1993-07-14 1995-01-24 Isuzu Ceramics Kenkyusho:Kk 超高速磁石回転子
DE4331798B4 (de) * 1993-09-18 2004-08-26 Robert Bosch Gmbh Verfahren zur Herstellung von mikromechanischen Bauelementen
JP3347203B2 (ja) * 1993-12-27 2002-11-20 富士通株式会社 微細空洞形成方法及び微細空洞を有する微小装置
US5508231A (en) * 1994-03-07 1996-04-16 National Semiconductor Corporation Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits
JP3627761B2 (ja) * 1994-03-09 2005-03-09 株式会社デンソー 半導体力学量センサの製造方法
US5936159A (en) * 1994-03-09 1999-08-10 Nippondenso Co., Ltd. Semiconductor sensor having multi-layer movable beam structure film
DE4418207C1 (de) * 1994-05-25 1995-06-22 Siemens Ag Thermischer Sensor/Aktuator in Halbleitermaterial
JP3399660B2 (ja) * 1994-10-06 2003-04-21 株式会社東海理化電機製作所 表面型の加速度センサの製造方法
US5883310A (en) * 1994-11-04 1999-03-16 The Regents Of The University Of California Micromachined hot-wire shear stress sensor
JPH08274350A (ja) * 1995-03-29 1996-10-18 Yokogawa Electric Corp 半導体圧力センサ及びその製造方法
US5578528A (en) * 1995-05-02 1996-11-26 Industrial Technology Research Institute Method of fabrication glass diaphragm on silicon macrostructure
US5736430A (en) * 1995-06-07 1998-04-07 Ssi Technologies, Inc. Transducer having a silicon diaphragm and method for forming same
US6021675A (en) * 1995-06-07 2000-02-08 Ssi Technologies, Inc. Resonating structure and method for forming the resonating structure
CA2176052A1 (en) * 1995-06-07 1996-12-08 James D. Seefeldt Transducer having a resonating silicon beam and method for forming same
FR2736654B1 (fr) * 1995-07-13 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'elements de microstructures flottants rigides et dispositif equipe de tels elements
US5526700A (en) * 1995-09-29 1996-06-18 Akeel; Hadi A. Six component force gage
FR2739977B1 (fr) * 1995-10-17 1998-01-23 France Telecom Capteur monolithique d'empreintes digitales
US5883420A (en) * 1995-12-20 1999-03-16 Motorola, Inc. Sensor device having a pathway and a sealed cavity
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
DE69627645T2 (de) * 1996-07-31 2004-02-05 Stmicroelectronics S.R.L., Agrate Brianza Integrierter piezoresistiver Druckwandler und Herstellungsverfahren dazu
DE69630292D1 (de) * 1996-07-31 2003-11-13 St Microelectronics Srl Verfahren zur Herstellung von integrierten Halbleiteranordnungen mit chemoresistivem Gasmikrosensor
JPH10148591A (ja) * 1996-09-19 1998-06-02 Fuji Koki Corp 圧力検出装置
SG83089A1 (en) * 1996-10-18 2001-09-18 Eg & G Internat Isolation process for surface micromachined sensors and actuators
FR2756973B1 (fr) * 1996-12-09 1999-01-08 Commissariat Energie Atomique Procede d'introduction d'une phase gazeuse dans une cavite fermee
US6379990B1 (en) * 1997-01-03 2002-04-30 Infineon Technologies Ag Method of fabricating a micromechanical semiconductor configuration
DE19710324A1 (de) * 1997-03-13 1998-09-17 Bosch Gmbh Robert Verfahren zur Herstellung von mikromechanische Strukturen aufweisenden Halbleiterbauelemente
US6309975B1 (en) 1997-03-14 2001-10-30 Micron Technology, Inc. Methods of making implanted structures
GR1003010B (el) * 1997-05-07 1998-11-20 "����������" Ολοκληρωμενος αισθητηρας ροης αεριων χρησιμοποιωντας τεχνολογια πορωδους πυριτιου
US6388279B1 (en) * 1997-06-11 2002-05-14 Denso Corporation Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof
EP0895276A1 (en) * 1997-07-31 1999-02-03 STMicroelectronics S.r.l. Process for manufacturing integrated microstructures of single-crystal semiconductor material
US5976767A (en) 1997-10-09 1999-11-02 Micron Technology, Inc. Ammonium hydroxide etch of photoresist masked silicon
DE19752208A1 (de) * 1997-11-25 1999-06-02 Bosch Gmbh Robert Thermischer Membransensor und Verfahren zu seiner Herstellung
FR2773261B1 (fr) * 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
DE69922727T2 (de) * 1998-03-31 2005-12-15 Hitachi, Ltd. Kapazitiver Druckwandler
US6022756A (en) * 1998-07-31 2000-02-08 Delco Electronics Corp. Metal diaphragm sensor with polysilicon sensing elements and methods therefor
DE19843984B4 (de) * 1998-09-25 2013-10-24 Robert Bosch Gmbh Verfahren zur Herstellung von Strahlungssensoren
US6225140B1 (en) 1998-10-13 2001-05-01 Institute Of Microelectronics CMOS compatable surface machined pressure sensor and method of fabricating the same
US6319743B1 (en) 1999-04-14 2001-11-20 Mykrolis Corporation Method of making thin film piezoresistive sensor
US7427526B2 (en) * 1999-12-20 2008-09-23 The Penn State Research Foundation Deposited thin films and their use in separation and sacrificial layer applications
US6520020B1 (en) 2000-01-06 2003-02-18 Rosemount Inc. Method and apparatus for a direct bonded isolated pressure sensor
US6508129B1 (en) 2000-01-06 2003-01-21 Rosemount Inc. Pressure sensor capsule with improved isolation
US6561038B2 (en) 2000-01-06 2003-05-13 Rosemount Inc. Sensor with fluid isolation barrier
US6516671B2 (en) 2000-01-06 2003-02-11 Rosemount Inc. Grain growth of electrical interconnection for microelectromechanical systems (MEMS)
US6505516B1 (en) 2000-01-06 2003-01-14 Rosemount Inc. Capacitive pressure sensing with moving dielectric
US6893892B2 (en) * 2000-03-29 2005-05-17 Georgia Tech Research Corp. Porous gas sensors and method of preparation thereof
JP4710147B2 (ja) * 2000-06-13 2011-06-29 株式会社デンソー 半導体圧力センサ
GB0015500D0 (en) * 2000-06-23 2000-08-16 Randox Lab Ltd Production of silicon diaphragms by precision grinding
FR2811807B1 (fr) * 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
DE10036724A1 (de) * 2000-07-27 2002-02-14 Infineon Technologies Ag Verfahren zur Bildung eines Grabens in einem Halbleitersubstrat
JP4250868B2 (ja) * 2000-09-05 2009-04-08 株式会社デンソー 半導体圧力センサの製造方法
DE10064494A1 (de) * 2000-12-22 2002-07-04 Bosch Gmbh Robert Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement, wobei das Halbleiterbauelement insbesondere eine bewegliche Masse aufweist
DE10065026A1 (de) * 2000-12-23 2002-07-04 Bosch Gmbh Robert Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
US6736982B2 (en) * 2001-06-15 2004-05-18 Xiang Zheng Tu Micromachined vertical vibrating gyroscope
FR2830983B1 (fr) * 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
DE10154867A1 (de) * 2001-11-08 2003-05-28 Bosch Gmbh Robert Halbleiterbauelement, insbesondere mikromechanischer Drucksensor
AU2002364157A1 (en) * 2001-12-12 2003-06-23 The Pennsylvania State University Chemical reactor templates: sacrificial layer fabrication and template use
WO2003060986A2 (en) * 2002-01-11 2003-07-24 The Pennsylvania State University Method of forming a removable support with a sacrificial layers and of transferring devices
US6662663B2 (en) * 2002-04-10 2003-12-16 Hewlett-Packard Development Company, L.P. Pressure sensor with two membranes forming a capacitor
US6759264B2 (en) * 2002-05-17 2004-07-06 Ligh Tuning Technology Inc. Pressure type fingerprint sensor fabrication method
US7265429B2 (en) * 2002-08-07 2007-09-04 Chang-Feng Wan System and method of fabricating micro cavities
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
US7176108B2 (en) * 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
US6928879B2 (en) * 2003-02-26 2005-08-16 Robert Bosch Gmbh Episeal pressure sensor and method for making an episeal pressure sensor
US7094621B2 (en) * 2003-03-05 2006-08-22 Jbcr Innovations, L.L.P. Fabrication of diaphragms and “floating” regions of single crystal semiconductor for MEMS devices
US7075160B2 (en) 2003-06-04 2006-07-11 Robert Bosch Gmbh Microelectromechanical systems and devices having thin film encapsulated mechanical structures
US6936491B2 (en) 2003-06-04 2005-08-30 Robert Bosch Gmbh Method of fabricating microelectromechanical systems and devices having trench isolated contacts
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
WO2005058133A2 (en) * 2003-12-11 2005-06-30 Proteus Biomedical, Inc. Implantable pressure sensors
US7762138B2 (en) * 2003-12-11 2010-07-27 Proteus Biomedical, Inc. Pressure sensor circuits
DE102004036032A1 (de) * 2003-12-16 2005-07-21 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein Halbleiterbauelement, insbesondere ein Membransensor
EP1544163B1 (de) * 2003-12-16 2021-02-24 Robert Bosch GmbH Verfahren zur Herstellung eines Membransensors und entsprechender Membransensor
US7569412B2 (en) * 2003-12-16 2009-08-04 Robert Bosch Gmbh Method for manufacturing a diaphragm sensor
US7772087B2 (en) * 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
US7265477B2 (en) * 2004-01-05 2007-09-04 Chang-Feng Wan Stepping actuator and method of manufacture therefore
US20050181572A1 (en) * 2004-02-13 2005-08-18 Verhoeven Tracy B. Method for acoustically isolating an acoustic resonator from a substrate
EP1577656B1 (en) 2004-03-19 2010-06-09 STMicroelectronics Srl Method for manufacturing a semiconductor pressure sensor
US7367237B2 (en) 2004-08-12 2008-05-06 University Of Southern California MEMS vascular sensor
JP2006069151A (ja) * 2004-09-06 2006-03-16 Canon Inc 圧電膜型アクチュエータの製造方法及び液体噴射ヘッド
JP2006069152A (ja) * 2004-09-06 2006-03-16 Canon Inc インクジェットヘッド及びその製造方法
US20060115919A1 (en) * 2004-11-30 2006-06-01 Gogoi Bishnu P Method of making a microelectromechanical (MEM) device using porous material as a sacrificial layer
KR100692593B1 (ko) * 2005-01-24 2007-03-13 삼성전자주식회사 Mems 구조체, 외팔보 형태의 mems 구조체 및밀봉된 유체채널의 제조 방법.
US7884432B2 (en) * 2005-03-22 2011-02-08 Ametek, Inc. Apparatus and methods for shielding integrated circuitry
FR2886051B1 (fr) 2005-05-20 2007-08-10 Commissariat Energie Atomique Procede de detachement d'un film mince
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
TWI282587B (en) * 2005-11-11 2007-06-11 Touch Micro System Tech Method of performing double-sided process
US7732241B2 (en) * 2005-11-30 2010-06-08 Semiconductor Energy Labortory Co., Ltd. Microstructure and manufacturing method thereof and microelectromechanical system
US8039050B2 (en) * 2005-12-21 2011-10-18 Geo2 Technologies, Inc. Method and apparatus for strengthening a porous substrate
FR2897937B1 (fr) * 2006-02-24 2008-05-23 Commissariat Energie Atomique Capteur de pression a jauges resistives
JP4896963B2 (ja) * 2006-03-16 2012-03-14 東京エレクトロン株式会社 ウエハ状計測装置及びその製造方法
FR2899378B1 (fr) * 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
JP5110885B2 (ja) * 2007-01-19 2012-12-26 キヤノン株式会社 複数の導電性の領域を有する構造体
EP1997637B1 (en) * 2007-05-30 2012-09-12 Océ-Technologies B.V. Method of manufacturing a piezoelectric ink jet device
KR100964971B1 (ko) * 2007-12-05 2010-06-21 한국전자통신연구원 초소형 압저항형 압력 센서 및 그 제조 방법
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
JP5374077B2 (ja) 2008-06-16 2013-12-25 ローム株式会社 Memsセンサ
WO2010022321A1 (en) * 2008-08-21 2010-02-25 Georgia Tech Research Corporation Gas sensors, methods of preparation thereof, methods of selecting gas sensor materials, and methods of use of gas sensors
JP2010098518A (ja) * 2008-10-16 2010-04-30 Rohm Co Ltd Memsセンサの製造方法およびmemsセンサ
KR101498334B1 (ko) * 2009-01-27 2015-03-03 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 음향 에너지 변환기
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
US8329053B2 (en) * 2009-11-23 2012-12-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Micromachined transducers and method of fabrication
JP2012026856A (ja) * 2010-07-23 2012-02-09 Hitachi Automotive Systems Ltd 熱式空気流量センサ
FR2967294B1 (fr) * 2010-11-10 2012-12-07 Commissariat Energie Atomique Procédé de formation d'une structure multicouches
US8881596B2 (en) * 2012-01-30 2014-11-11 Continental Automotive Systems, Inc. Semiconductor sensing device to minimize thermal noise
US9212940B2 (en) * 2012-09-07 2015-12-15 Xiang Zheng Tu Vacuum cavity-insulated flow sensors
WO2014074092A2 (en) * 2012-11-07 2014-05-15 Empire Technology Development Llc Motion sensing
US9452923B2 (en) * 2012-12-20 2016-09-27 Infineon Technologies Dresden Gmbh Method for manufacturing a micromechanical system comprising a removal of sacrificial material through a hole in a margin region
US9176018B2 (en) * 2013-02-22 2015-11-03 Bin Qi Micromachined ultra-miniature piezoresistive pressure sensor and method of fabrication of the same
US9070499B2 (en) * 2013-05-14 2015-06-30 Universal Cement Corporation Light emitting key
US10151647B2 (en) * 2013-06-19 2018-12-11 Honeywell International Inc. Integrated SOI pressure sensor having silicon stress isolation member
USD776664S1 (en) * 2015-05-20 2017-01-17 Chaya Coleena Hendrick Smart card
JP6589810B2 (ja) * 2016-10-18 2019-10-16 株式会社デンソー 圧力センサ
WO2020170175A1 (en) 2019-02-19 2020-08-27 Fontem Holdings 1 B.V. Electronic smoking device
US20230129720A1 (en) * 2021-10-26 2023-04-27 Stmicroelectronics S.R.L. Micro-electro-mechanical device for transducing high-frequency acoustic waves in a propagation medium and manufacturing process thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665610A (en) * 1985-04-22 1987-05-19 Stanford University Method of making a semiconductor transducer having multiple level diaphragm structure
US4744863A (en) * 1985-04-26 1988-05-17 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
US4771638A (en) * 1985-09-30 1988-09-20 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor pressure sensor
US4766666A (en) * 1985-09-30 1988-08-30 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor pressure sensor and method of manufacturing the same
US4975390A (en) * 1986-12-18 1990-12-04 Nippondenso Co. Ltd. Method of fabricating a semiconductor pressure sensor
US4893509A (en) * 1988-12-27 1990-01-16 General Motors Corporation Method and product for fabricating a resonant-bridge microaccelerometer
US5095401A (en) * 1989-01-13 1992-03-10 Kopin Corporation SOI diaphragm sensor
US4945769A (en) * 1989-03-06 1990-08-07 Delco Electronics Corporation Semiconductive structure useful as a pressure sensor
US4993143A (en) * 1989-03-06 1991-02-19 Delco Electronics Corporation Method of making a semiconductive structure useful as a pressure sensor
US4889590A (en) * 1989-04-27 1989-12-26 Motorola Inc. Semiconductor pressure sensor means and method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0624900A2 (en) * 1993-05-10 1994-11-17 Delco Electronics Corporation Method of micro-machining an integrated sensor on the surface of a silicon wafer
EP0624900A3 (en) * 1993-05-10 1997-10-08 Delco Electronics Corp Method for micromachining a sensor integrated into the surface of a silicon body.
CN100340645C (zh) * 2000-08-29 2007-10-03 长春汽车材料研究所 乳化型拉延防锈润滑剂
CN1120882C (zh) * 2000-09-23 2003-09-10 中国科学院兰州化学物理研究所 工业齿轮蜗轮用润滑油复合添加剂
CN100413616C (zh) * 2005-02-28 2008-08-27 合肥波林新材料有限公司 一种齿轮油泵粉末冶金侧板
CN104120001A (zh) * 2014-08-07 2014-10-29 福建省将乐三华轴瓦股份有限公司 一种润滑剂及其用途
CN104804841A (zh) * 2015-05-08 2015-07-29 苏州锴诚缝制设备有限公司 一种润滑剂及其制备方法
CN104804841B (zh) * 2015-05-08 2017-09-01 苏州锴诚缝制设备有限公司 一种润滑剂及其制备方法
CN112058611A (zh) * 2020-09-08 2020-12-11 中国科学院兰州化学物理研究所 一种采用激光织构化处理发动机轴套的方法

Also Published As

Publication number Publication date
US5242863A (en) 1993-09-07
CN1018844B (zh) 1992-10-28

Similar Documents

Publication Publication Date Title
CN1055195A (zh) 防锈干膜润滑剂
JP5001646B2 (ja) 平軸受
US4383970A (en) Process for preparation of graphite-containing aluminum alloys
JP2595386B2 (ja) 高速用多層摺動材料及びその製造方法
GB2239027A (en) Bearing material
JPH08199327A (ja) 斜板式コンプレッサーの斜板
GB2345095A (en) Sliding bearing including a resin layer consisting of soft metal particles dispersed in a thermosetting resin
JP2004277883A (ja) 熱間加工アルミニウム合金、その合金から作られた基層と軸受素子
CN1050569A (zh) 铁铬合金
JPH0979262A (ja) 滑り軸受
US5326384A (en) Sliding material
CN1450139A (zh) 一种耐高温触变型聚酰亚胺基防腐润滑涂料
US7375060B2 (en) Plating concentrate
CN108515178A (zh) 一种铁铜基含油轴承材料及其制备方法
KR0144646B1 (ko) 금속냉간가공용 복합피막형성을 위한 금속표면처리화학조성물 및 복합피막의 형성방법
GB2277935A (en) Copper-lead based bearing material
US5665480A (en) Copper-lead alloy bearing
JPS6138759B2 (zh)
JPS58108299A (ja) アルミニウム合金軸受
CN1323147C (zh) 一种聚苯胺防腐脂及其制备方法
CN113337204B (zh) 减摩漆
Montgomery Friction and wear of some bronzes under lubricated reciprocating sliding
JPS5881220A (ja) スラスト軸受
CN111360244B (zh) 轴承合金坯料、轴承合金、轴承材料及其制备方法、应用
JP2004010707A (ja) 摺動用被覆組成物及び摺動部材

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C13 Decision
GR02 Examined patent application
C14 Grant of patent or utility model
GR01 Patent grant