CN1055195A - 防锈干膜润滑剂 - Google Patents
防锈干膜润滑剂 Download PDFInfo
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- CN1055195A CN1055195A CN90104159.9A CN90104159A CN1055195A CN 1055195 A CN1055195 A CN 1055195A CN 90104159 A CN90104159 A CN 90104159A CN 1055195 A CN1055195 A CN 1055195A
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- dry film
- film lubricant
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- lubricant
- fluoride
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- 239000000314 lubricant Substances 0.000 title claims abstract description 32
- 239000004593 Epoxy Substances 0.000 claims abstract description 25
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229920005989 resin Polymers 0.000 claims abstract description 14
- 239000011347 resin Substances 0.000 claims abstract description 14
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- -1 rare earth fluoride Chemical class 0.000 claims abstract description 13
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- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 11
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- 239000000203 mixture Substances 0.000 claims abstract description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 12
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- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 4
- 150000008065 acid anhydrides Chemical group 0.000 claims description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
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- 241000863032 Trieres Species 0.000 description 1
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- 238000007743 anodising Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KVNRLNFWIYMESJ-UHFFFAOYSA-N butyronitrile Chemical compound CCCC#N KVNRLNFWIYMESJ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
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- 238000005553 drilling Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
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- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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Abstract
本发明属于固体润滑剂,用于经常接触盐雾和潮
湿气氛的设备的润滑与防锈。本发明的特点是选用
酚醛环氧树脂、环氧树脂、丁腈橡胶作为粘结剂,润滑
剂则由二硫化钼及氟化稀土组成,将三氧化二锑或碱
式亚磷酸铅作为防锈添加剂,再加入固化剂等组成防
锈干膜润滑剂,干膜润滑剂加入有机溶剂中制成喷
剂,喷涂在部件表面上并经加热固化后成为粘结牢
固,结构致密的固体薄膜,具有良好的耐磨损性能、低
摩擦系数和优异的防腐蚀能力。
Description
本发明是一种具有防锈功能的干膜润滑剂,属于固体润滑剂。它适用于飞机、汽车、印刷、复印、建筑、纺织、冶金以及军事武器的有关零件的润滑,尤其适用于露天搁置或经常接触盐雾船舶、海军飞机以及钻井平台等的设备的润滑与防锈。
为减少机械运动造成的摩擦对偶的磨损和动力消耗,人们通常以添加润滑油脂等方式减小摩擦和降低磨损。在一些不宜使用润滑油脂的工况环境下,干膜润滑剂已很好地解决了诸如辐照、真空、高低温、失重等环境下的润滑问题。但在某些特殊工况和环境中如海洋、露天等,防腐和防锈问题比较突出,一般的干膜润滑剂由于不具备这样的功能,使得干膜润滑剂的使用寿命大大下降。美国专利3223626为此叙述了一种粘结型干膜润滑剂,用于防腐,其组成中含有石墨,而石墨易与金属底材起电化学反应,从而致使器件易遭受腐蚀。美国专利3314885在前者基础上作了改进,其组份中不含石墨,采取加入碱式亚磷酸铅以提高干膜的防腐蚀作用。但该专利以环氧树脂作为粘结剂,使干膜较脆、耐水性也差,限制了它的使用范围。
本发明的目的在于克服上述现有技术中的缺点而提供一种润滑、防锈、抗磨损性能均好的干膜润滑剂并同时提供干膜的制备方法。
本发明的目的可通过如下措施来实现:
干膜润滑剂由粘结剂、固体润滑剂、防锈添加剂、固化剂等组成。粘结剂为酚醛环氧树脂、丁腈橡胶和环氧树脂。二硫化钼和氟化稀土为固体润滑剂。三氧化二锑或碱式亚磷酸铅为防锈添加剂。干膜润滑剂中各组分的重量百分比为:酚醛环氧树脂5~25%、环氧树脂0~22%、丁腈橡胶0~20%、二硫化钼40~60%、氟化稀土1~10%、三氧化二锑0~8%、碱式亚磷酸铅0~10%。为了使粘结剂在成膜时形成相互交联的体型结构,应在干膜润滑剂中加入酸酐、胺、双腈胺、间苯二酚等固化剂,干膜润滑剂中固化剂含量为5~15%(重量)。
选用酚醛环氧树脂、环氧树脂和丁腈橡胶作为粘结剂,能使干膜的粘结强度、柔韧性和耐磨性得到充分保证。
固体润滑剂除了加入最常用的二硫化钼外还加入耐磨性很好的氟化稀土。三氧化二锑和碱式亚磷酸铅的加入使干膜防锈性能增加。故本发明的干膜润滑剂具有极好的承受负荷能力、摩擦系数低、耐磨性能好,并且有优异的防锈性能。
本发明适用于一般的轴承、齿轮、涡轮涡杆、齿条、滑块、活塞、销轴等部件的润滑。尤其适于露天搁置机械的润滑,如建筑机械,也适于经常接触海水盐雾的海军装备(如飞机、舰艇)、海上井台以及经常处于酸、碱等蒸汽环境的化工设备的润滑与防锈。
本发明的上述配方中粘结剂、固体润滑剂、防锈添加剂等在未制成干膜前都是粉状固体或粘稠液体。因此,在制备干膜时,需将其制成干膜喷剂进行喷涂,就是把配方中的固体颗粒分散于分散介质中。按本发明的配方,将粉末状物料加入分散介质中,通过充分研磨后,制成浆状物喷剂。分散介质选用有机溶剂,即丁酮、丁醇、丙酮、甲苯的混合液,加入量为配方物料的4~5倍(重量)。分散介质的组成为:丁酮10~35%、丁醇10~40%、丙酮10~40%、甲苯10~25%(重量百分含量),之所以选用此四种溶剂,是充分考虑了成膜时间、强度等因素。
本发明选用的氟化稀土,可以是氟化镧、氟化铈、氟化钕等,也可以是混合稀土氟化物,但最好选用氟化铈。
本发明所用的固化剂为酸酐、胺、双腈胺、间苯二酚、邻苯二甲酸酐等,最好选用邻苯二甲酸酐。
本发明选用的酚醛环氧树脂,软化点小于70℃,环氧值大于等于0.46。环氧树脂软化点为12~20℃,环氧值0.41~0.47,平均分子量为450。丁腈橡胶中丙烯腈含量在37.2~38.5%之间,分子量为3000~10000。
本发明所用的二硫化钼纯度大于98%,过325目筛孔后网上残余物小于0.5%,粒度在5微米以下,三氧化二锑、碱式亚磷酸铅、氟化稀土均通过300目筛孔。
本发明的干膜润滑剂按最佳实施例制得的产品的主要技术指标列于下表:
* 在Timken试验机上,2.5米/秒,32公斤下
本发明的干膜润滑剂适合喷涂在各种碳钢、不锈钢、合金钢,铜、铝及其合金、铸铁等材质的机加工表面和研磨表面,也可喷涂在经喷砂、喷丸、磷化、阳极化、钝化的金属材料工件表面。
本发明可以通过如下措施来实施:
按本发明配方称取二硫化钼、氟化稀土、研磨至所需的粒度,然后加入部分分散介质中充分混合,称取酚醛环氧树脂、环氧树脂和丁腈橡胶加入剩余部分的分散介质中,使其溶化,和前面的配料相混合,研磨半小时左右,然后加入固化剂(酸酐、胺、双腈胺、间苯二酚、邻苯二甲酸酐等),搅拌均匀即为干膜润滑喷剂。制好的喷剂按常规方法将其喷涂在工件上,待其挥发掉有机溶剂(分散介质)后,在100±3℃下固化半小时,然后在204±2℃下固化2小时(指以邻苯二甲酸酐为固化剂,其他固化剂的最后固化温度一般在140~160℃),即在工件上形成干膜。
本发明实施例如下:
例1.
酚醛环氧树脂 8% 环氧树脂 12%
丁腈橡胶 9.5% 二硫化钼 52.5%
氟化铈 6% 三氧化二锑 6%
邻苯二甲酸酐 6%
例2.
酚醛环氧树脂 12% 环氧树脂 15%
二硫化钼 44% 氟化铈 8%
三氧化二锑 5% 碱式亚磷酸铅 7%
邻苯二甲酸酐 10%
例3.
酚醛环氧树脂 15% 环氧树脂 9%
丁睛橡胶 4% 二硫化钼 47%
氟化镧 8% 三氧化二锑 7%
双氰胺 10%
例4
酚醛环氧树脂 17% 环氧树脂 8%
丁腈橡胶 5% 二硫化钼 60%
氟化镧 3% 三氧化二锑 2%
双氰胺 5%
例5.
酚醛环氧树脂 15% 环氧树脂 9%
二硫化钼 55% 氟化铈 6%
三氟化二锑 8% 邻苯二甲酸酐 7%
例6
酚醛环氧 16% 丁腈橡胶 14%
二硫化钼 55% 氟化镧 4%
三氧化二锑 4% 邻苯二甲酸酐 7%
以上实施例配方中混合溶剂的加入量为配方物料总重量的4~5倍。
Claims (7)
1、一种防锈干膜润滑剂,其特征是由
酚醛环氧树脂 5~25
环氧树脂 0~22
丁腈橡胶 0~20
二硫化钼 40~60
氟化稀土 1~10
三氧化二锑 0~8
碱式亚磷酸铅 0~10
固化剂 5~15
(重量百分含量)组成,其中固化剂为酸酐,双腈胺、间苯二酚、邻苯二甲酸酐等,最好是邻苯二甲酸酐。
2、如权利要求1所述的干膜润滑剂,其特征是氟化稀土可以是氟化镧、氟化铈、氟化钕,最好选用氟化铈。
3、如权利要求1所述的防锈干膜润滑剂,其特征是酚醛环氧树脂的软化点小于70℃,环氧值大于等于0.46。
4、如权利要求1所述的防锈干膜润滑剂,其特征是环氧树脂的软化点12~20℃,环氧值为0.41~0.47。
5、如权利要求1所述的防锈干膜润滑剂,其特征是丁腈橡胶中丙烯腈含量在37.2~38.5%之间,分子量为3000~10000。
6、如权利要求1所述的防锈干膜润滑剂,其特征是二硫化钼纯度大于98%,粒度在5微米以下,三氧化二锑、氟化稀土均通过300筛孔。
7、一种防锈干膜润滑剂的制备方法,在干膜粉末状物料中加入分散介质制成喷剂进行喷涂,其特征是分散介质加入量是干膜润滑剂的4~5倍,分散介质为丁酮、丁醇、丙酮、甲苯的混合液,其组成(重量百分含量)为:丁酮10~35、丁酮10~40、丙酮10~40、甲苯10~25。
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US07/830,559 US5242863A (en) | 1990-06-02 | 1991-06-07 | Silicon diaphragm piezoresistive pressure sensor and fabrication method of the same |
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CN90104159.9A CN1018844B (zh) | 1990-06-02 | 1990-06-02 | 防锈干膜润滑剂 |
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Families Citing this family (125)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1027011C (zh) * | 1990-07-12 | 1994-12-14 | 涂相征 | 一种硅梁压阻加速度传感器及其制造方法 |
JP3315730B2 (ja) * | 1991-08-26 | 2002-08-19 | マイクロリス、コーパレイシャン | ピエゾ抵抗半導体センサ・ゲージ及びこれを作る方法 |
DE69313337T2 (de) * | 1992-04-17 | 1998-01-02 | Terumo Corp | Infrarotsensor und Verfahren für dessen Herstellung |
JP3352118B2 (ja) * | 1992-08-25 | 2002-12-03 | キヤノン株式会社 | 半導体装置及びその製造方法 |
DE4314888C1 (de) * | 1993-05-05 | 1994-08-18 | Ignaz Eisele | Verfahren zum Abscheiden einer ganzflächigen Schicht durch eine Maske und optionalem Verschließen dieser Maske |
US5387803A (en) * | 1993-06-16 | 1995-02-07 | Kulite Semiconductor Products, Inc. | Piezo-optical pressure sensitive switch with porous material |
JPH0723539A (ja) * | 1993-07-14 | 1995-01-24 | Isuzu Ceramics Kenkyusho:Kk | 超高速磁石回転子 |
DE4331798B4 (de) * | 1993-09-18 | 2004-08-26 | Robert Bosch Gmbh | Verfahren zur Herstellung von mikromechanischen Bauelementen |
JP3347203B2 (ja) * | 1993-12-27 | 2002-11-20 | 富士通株式会社 | 微細空洞形成方法及び微細空洞を有する微小装置 |
US5508231A (en) * | 1994-03-07 | 1996-04-16 | National Semiconductor Corporation | Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits |
JP3627761B2 (ja) * | 1994-03-09 | 2005-03-09 | 株式会社デンソー | 半導体力学量センサの製造方法 |
US5936159A (en) * | 1994-03-09 | 1999-08-10 | Nippondenso Co., Ltd. | Semiconductor sensor having multi-layer movable beam structure film |
DE4418207C1 (de) * | 1994-05-25 | 1995-06-22 | Siemens Ag | Thermischer Sensor/Aktuator in Halbleitermaterial |
JP3399660B2 (ja) * | 1994-10-06 | 2003-04-21 | 株式会社東海理化電機製作所 | 表面型の加速度センサの製造方法 |
US5883310A (en) * | 1994-11-04 | 1999-03-16 | The Regents Of The University Of California | Micromachined hot-wire shear stress sensor |
JPH08274350A (ja) * | 1995-03-29 | 1996-10-18 | Yokogawa Electric Corp | 半導体圧力センサ及びその製造方法 |
US5578528A (en) * | 1995-05-02 | 1996-11-26 | Industrial Technology Research Institute | Method of fabrication glass diaphragm on silicon macrostructure |
US5736430A (en) * | 1995-06-07 | 1998-04-07 | Ssi Technologies, Inc. | Transducer having a silicon diaphragm and method for forming same |
US6021675A (en) * | 1995-06-07 | 2000-02-08 | Ssi Technologies, Inc. | Resonating structure and method for forming the resonating structure |
CA2176052A1 (en) * | 1995-06-07 | 1996-12-08 | James D. Seefeldt | Transducer having a resonating silicon beam and method for forming same |
FR2736654B1 (fr) * | 1995-07-13 | 1997-08-22 | Commissariat Energie Atomique | Procede de fabrication d'elements de microstructures flottants rigides et dispositif equipe de tels elements |
US5526700A (en) * | 1995-09-29 | 1996-06-18 | Akeel; Hadi A. | Six component force gage |
FR2739977B1 (fr) * | 1995-10-17 | 1998-01-23 | France Telecom | Capteur monolithique d'empreintes digitales |
US5883420A (en) * | 1995-12-20 | 1999-03-16 | Motorola, Inc. | Sensor device having a pathway and a sealed cavity |
FR2748851B1 (fr) | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
DE69627645T2 (de) * | 1996-07-31 | 2004-02-05 | Stmicroelectronics S.R.L., Agrate Brianza | Integrierter piezoresistiver Druckwandler und Herstellungsverfahren dazu |
DE69630292D1 (de) * | 1996-07-31 | 2003-11-13 | St Microelectronics Srl | Verfahren zur Herstellung von integrierten Halbleiteranordnungen mit chemoresistivem Gasmikrosensor |
JPH10148591A (ja) * | 1996-09-19 | 1998-06-02 | Fuji Koki Corp | 圧力検出装置 |
SG83089A1 (en) * | 1996-10-18 | 2001-09-18 | Eg & G Internat | Isolation process for surface micromachined sensors and actuators |
FR2756973B1 (fr) * | 1996-12-09 | 1999-01-08 | Commissariat Energie Atomique | Procede d'introduction d'une phase gazeuse dans une cavite fermee |
US6379990B1 (en) * | 1997-01-03 | 2002-04-30 | Infineon Technologies Ag | Method of fabricating a micromechanical semiconductor configuration |
DE19710324A1 (de) * | 1997-03-13 | 1998-09-17 | Bosch Gmbh Robert | Verfahren zur Herstellung von mikromechanische Strukturen aufweisenden Halbleiterbauelemente |
US6309975B1 (en) | 1997-03-14 | 2001-10-30 | Micron Technology, Inc. | Methods of making implanted structures |
GR1003010B (el) * | 1997-05-07 | 1998-11-20 | "����������" | Ολοκληρωμενος αισθητηρας ροης αεριων χρησιμοποιωντας τεχνολογια πορωδους πυριτιου |
US6388279B1 (en) * | 1997-06-11 | 2002-05-14 | Denso Corporation | Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof |
EP0895276A1 (en) * | 1997-07-31 | 1999-02-03 | STMicroelectronics S.r.l. | Process for manufacturing integrated microstructures of single-crystal semiconductor material |
US5976767A (en) | 1997-10-09 | 1999-11-02 | Micron Technology, Inc. | Ammonium hydroxide etch of photoresist masked silicon |
DE19752208A1 (de) * | 1997-11-25 | 1999-06-02 | Bosch Gmbh Robert | Thermischer Membransensor und Verfahren zu seiner Herstellung |
FR2773261B1 (fr) * | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
DE69922727T2 (de) * | 1998-03-31 | 2005-12-15 | Hitachi, Ltd. | Kapazitiver Druckwandler |
US6022756A (en) * | 1998-07-31 | 2000-02-08 | Delco Electronics Corp. | Metal diaphragm sensor with polysilicon sensing elements and methods therefor |
DE19843984B4 (de) * | 1998-09-25 | 2013-10-24 | Robert Bosch Gmbh | Verfahren zur Herstellung von Strahlungssensoren |
US6225140B1 (en) | 1998-10-13 | 2001-05-01 | Institute Of Microelectronics | CMOS compatable surface machined pressure sensor and method of fabricating the same |
US6319743B1 (en) | 1999-04-14 | 2001-11-20 | Mykrolis Corporation | Method of making thin film piezoresistive sensor |
US7427526B2 (en) * | 1999-12-20 | 2008-09-23 | The Penn State Research Foundation | Deposited thin films and their use in separation and sacrificial layer applications |
US6520020B1 (en) | 2000-01-06 | 2003-02-18 | Rosemount Inc. | Method and apparatus for a direct bonded isolated pressure sensor |
US6508129B1 (en) | 2000-01-06 | 2003-01-21 | Rosemount Inc. | Pressure sensor capsule with improved isolation |
US6561038B2 (en) | 2000-01-06 | 2003-05-13 | Rosemount Inc. | Sensor with fluid isolation barrier |
US6516671B2 (en) | 2000-01-06 | 2003-02-11 | Rosemount Inc. | Grain growth of electrical interconnection for microelectromechanical systems (MEMS) |
US6505516B1 (en) | 2000-01-06 | 2003-01-14 | Rosemount Inc. | Capacitive pressure sensing with moving dielectric |
US6893892B2 (en) * | 2000-03-29 | 2005-05-17 | Georgia Tech Research Corp. | Porous gas sensors and method of preparation thereof |
JP4710147B2 (ja) * | 2000-06-13 | 2011-06-29 | 株式会社デンソー | 半導体圧力センサ |
GB0015500D0 (en) * | 2000-06-23 | 2000-08-16 | Randox Lab Ltd | Production of silicon diaphragms by precision grinding |
FR2811807B1 (fr) * | 2000-07-12 | 2003-07-04 | Commissariat Energie Atomique | Procede de decoupage d'un bloc de materiau et de formation d'un film mince |
DE10036724A1 (de) * | 2000-07-27 | 2002-02-14 | Infineon Technologies Ag | Verfahren zur Bildung eines Grabens in einem Halbleitersubstrat |
JP4250868B2 (ja) * | 2000-09-05 | 2009-04-08 | 株式会社デンソー | 半導体圧力センサの製造方法 |
DE10064494A1 (de) * | 2000-12-22 | 2002-07-04 | Bosch Gmbh Robert | Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement, wobei das Halbleiterbauelement insbesondere eine bewegliche Masse aufweist |
DE10065026A1 (de) * | 2000-12-23 | 2002-07-04 | Bosch Gmbh Robert | Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren |
FR2823599B1 (fr) | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
US6736982B2 (en) * | 2001-06-15 | 2004-05-18 | Xiang Zheng Tu | Micromachined vertical vibrating gyroscope |
FR2830983B1 (fr) * | 2001-10-11 | 2004-05-14 | Commissariat Energie Atomique | Procede de fabrication de couches minces contenant des microcomposants |
DE10154867A1 (de) * | 2001-11-08 | 2003-05-28 | Bosch Gmbh Robert | Halbleiterbauelement, insbesondere mikromechanischer Drucksensor |
AU2002364157A1 (en) * | 2001-12-12 | 2003-06-23 | The Pennsylvania State University | Chemical reactor templates: sacrificial layer fabrication and template use |
WO2003060986A2 (en) * | 2002-01-11 | 2003-07-24 | The Pennsylvania State University | Method of forming a removable support with a sacrificial layers and of transferring devices |
US6662663B2 (en) * | 2002-04-10 | 2003-12-16 | Hewlett-Packard Development Company, L.P. | Pressure sensor with two membranes forming a capacitor |
US6759264B2 (en) * | 2002-05-17 | 2004-07-06 | Ligh Tuning Technology Inc. | Pressure type fingerprint sensor fabrication method |
US7265429B2 (en) * | 2002-08-07 | 2007-09-04 | Chang-Feng Wan | System and method of fabricating micro cavities |
US7429495B2 (en) * | 2002-08-07 | 2008-09-30 | Chang-Feng Wan | System and method of fabricating micro cavities |
US7176108B2 (en) * | 2002-11-07 | 2007-02-13 | Soitec Silicon On Insulator | Method of detaching a thin film at moderate temperature after co-implantation |
FR2848336B1 (fr) | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | Procede de realisation d'une structure contrainte destinee a etre dissociee |
US6928879B2 (en) * | 2003-02-26 | 2005-08-16 | Robert Bosch Gmbh | Episeal pressure sensor and method for making an episeal pressure sensor |
US7094621B2 (en) * | 2003-03-05 | 2006-08-22 | Jbcr Innovations, L.L.P. | Fabrication of diaphragms and “floating” regions of single crystal semiconductor for MEMS devices |
US7075160B2 (en) | 2003-06-04 | 2006-07-11 | Robert Bosch Gmbh | Microelectromechanical systems and devices having thin film encapsulated mechanical structures |
US6936491B2 (en) | 2003-06-04 | 2005-08-30 | Robert Bosch Gmbh | Method of fabricating microelectromechanical systems and devices having trench isolated contacts |
FR2856844B1 (fr) | 2003-06-24 | 2006-02-17 | Commissariat Energie Atomique | Circuit integre sur puce de hautes performances |
FR2857953B1 (fr) | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | Structure empilee, et procede pour la fabriquer |
FR2861497B1 (fr) | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | Procede de transfert catastrophique d'une couche fine apres co-implantation |
WO2005058133A2 (en) * | 2003-12-11 | 2005-06-30 | Proteus Biomedical, Inc. | Implantable pressure sensors |
US7762138B2 (en) * | 2003-12-11 | 2010-07-27 | Proteus Biomedical, Inc. | Pressure sensor circuits |
DE102004036032A1 (de) * | 2003-12-16 | 2005-07-21 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements sowie ein Halbleiterbauelement, insbesondere ein Membransensor |
EP1544163B1 (de) * | 2003-12-16 | 2021-02-24 | Robert Bosch GmbH | Verfahren zur Herstellung eines Membransensors und entsprechender Membransensor |
US7569412B2 (en) * | 2003-12-16 | 2009-08-04 | Robert Bosch Gmbh | Method for manufacturing a diaphragm sensor |
US7772087B2 (en) * | 2003-12-19 | 2010-08-10 | Commissariat A L'energie Atomique | Method of catastrophic transfer of a thin film after co-implantation |
US7265477B2 (en) * | 2004-01-05 | 2007-09-04 | Chang-Feng Wan | Stepping actuator and method of manufacture therefore |
US20050181572A1 (en) * | 2004-02-13 | 2005-08-18 | Verhoeven Tracy B. | Method for acoustically isolating an acoustic resonator from a substrate |
EP1577656B1 (en) | 2004-03-19 | 2010-06-09 | STMicroelectronics Srl | Method for manufacturing a semiconductor pressure sensor |
US7367237B2 (en) | 2004-08-12 | 2008-05-06 | University Of Southern California | MEMS vascular sensor |
JP2006069151A (ja) * | 2004-09-06 | 2006-03-16 | Canon Inc | 圧電膜型アクチュエータの製造方法及び液体噴射ヘッド |
JP2006069152A (ja) * | 2004-09-06 | 2006-03-16 | Canon Inc | インクジェットヘッド及びその製造方法 |
US20060115919A1 (en) * | 2004-11-30 | 2006-06-01 | Gogoi Bishnu P | Method of making a microelectromechanical (MEM) device using porous material as a sacrificial layer |
KR100692593B1 (ko) * | 2005-01-24 | 2007-03-13 | 삼성전자주식회사 | Mems 구조체, 외팔보 형태의 mems 구조체 및밀봉된 유체채널의 제조 방법. |
US7884432B2 (en) * | 2005-03-22 | 2011-02-08 | Ametek, Inc. | Apparatus and methods for shielding integrated circuitry |
FR2886051B1 (fr) | 2005-05-20 | 2007-08-10 | Commissariat Energie Atomique | Procede de detachement d'un film mince |
FR2889887B1 (fr) | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
FR2891281B1 (fr) | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | Procede de fabrication d'un element en couches minces. |
TWI282587B (en) * | 2005-11-11 | 2007-06-11 | Touch Micro System Tech | Method of performing double-sided process |
US7732241B2 (en) * | 2005-11-30 | 2010-06-08 | Semiconductor Energy Labortory Co., Ltd. | Microstructure and manufacturing method thereof and microelectromechanical system |
US8039050B2 (en) * | 2005-12-21 | 2011-10-18 | Geo2 Technologies, Inc. | Method and apparatus for strengthening a porous substrate |
FR2897937B1 (fr) * | 2006-02-24 | 2008-05-23 | Commissariat Energie Atomique | Capteur de pression a jauges resistives |
JP4896963B2 (ja) * | 2006-03-16 | 2012-03-14 | 東京エレクトロン株式会社 | ウエハ状計測装置及びその製造方法 |
FR2899378B1 (fr) * | 2006-03-29 | 2008-06-27 | Commissariat Energie Atomique | Procede de detachement d'un film mince par fusion de precipites |
FR2910179B1 (fr) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
JP5110885B2 (ja) * | 2007-01-19 | 2012-12-26 | キヤノン株式会社 | 複数の導電性の領域を有する構造体 |
EP1997637B1 (en) * | 2007-05-30 | 2012-09-12 | Océ-Technologies B.V. | Method of manufacturing a piezoelectric ink jet device |
KR100964971B1 (ko) * | 2007-12-05 | 2010-06-21 | 한국전자통신연구원 | 초소형 압저항형 압력 센서 및 그 제조 방법 |
FR2925221B1 (fr) | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | Procede de transfert d'une couche mince |
JP5374077B2 (ja) | 2008-06-16 | 2013-12-25 | ローム株式会社 | Memsセンサ |
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JP2010098518A (ja) * | 2008-10-16 | 2010-04-30 | Rohm Co Ltd | Memsセンサの製造方法およびmemsセンサ |
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FR2947098A1 (fr) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
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Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4665610A (en) * | 1985-04-22 | 1987-05-19 | Stanford University | Method of making a semiconductor transducer having multiple level diaphragm structure |
US4744863A (en) * | 1985-04-26 | 1988-05-17 | Wisconsin Alumni Research Foundation | Sealed cavity semiconductor pressure transducers and method of producing the same |
US4771638A (en) * | 1985-09-30 | 1988-09-20 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Semiconductor pressure sensor |
US4766666A (en) * | 1985-09-30 | 1988-08-30 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Semiconductor pressure sensor and method of manufacturing the same |
US4975390A (en) * | 1986-12-18 | 1990-12-04 | Nippondenso Co. Ltd. | Method of fabricating a semiconductor pressure sensor |
US4893509A (en) * | 1988-12-27 | 1990-01-16 | General Motors Corporation | Method and product for fabricating a resonant-bridge microaccelerometer |
US5095401A (en) * | 1989-01-13 | 1992-03-10 | Kopin Corporation | SOI diaphragm sensor |
US4945769A (en) * | 1989-03-06 | 1990-08-07 | Delco Electronics Corporation | Semiconductive structure useful as a pressure sensor |
US4993143A (en) * | 1989-03-06 | 1991-02-19 | Delco Electronics Corporation | Method of making a semiconductive structure useful as a pressure sensor |
US4889590A (en) * | 1989-04-27 | 1989-12-26 | Motorola Inc. | Semiconductor pressure sensor means and method |
-
1990
- 1990-06-02 CN CN90104159.9A patent/CN1018844B/zh not_active Expired
-
1991
- 1991-06-07 US US07/830,559 patent/US5242863A/en not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0624900A2 (en) * | 1993-05-10 | 1994-11-17 | Delco Electronics Corporation | Method of micro-machining an integrated sensor on the surface of a silicon wafer |
EP0624900A3 (en) * | 1993-05-10 | 1997-10-08 | Delco Electronics Corp | Method for micromachining a sensor integrated into the surface of a silicon body. |
CN100340645C (zh) * | 2000-08-29 | 2007-10-03 | 长春汽车材料研究所 | 乳化型拉延防锈润滑剂 |
CN1120882C (zh) * | 2000-09-23 | 2003-09-10 | 中国科学院兰州化学物理研究所 | 工业齿轮蜗轮用润滑油复合添加剂 |
CN100413616C (zh) * | 2005-02-28 | 2008-08-27 | 合肥波林新材料有限公司 | 一种齿轮油泵粉末冶金侧板 |
CN104120001A (zh) * | 2014-08-07 | 2014-10-29 | 福建省将乐三华轴瓦股份有限公司 | 一种润滑剂及其用途 |
CN104804841A (zh) * | 2015-05-08 | 2015-07-29 | 苏州锴诚缝制设备有限公司 | 一种润滑剂及其制备方法 |
CN104804841B (zh) * | 2015-05-08 | 2017-09-01 | 苏州锴诚缝制设备有限公司 | 一种润滑剂及其制备方法 |
CN112058611A (zh) * | 2020-09-08 | 2020-12-11 | 中国科学院兰州化学物理研究所 | 一种采用激光织构化处理发动机轴套的方法 |
Also Published As
Publication number | Publication date |
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US5242863A (en) | 1993-09-07 |
CN1018844B (zh) | 1992-10-28 |
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