DE69630292D1 - Verfahren zur Herstellung von integrierten Halbleiteranordnungen mit chemoresistivem Gasmikrosensor - Google Patents

Verfahren zur Herstellung von integrierten Halbleiteranordnungen mit chemoresistivem Gasmikrosensor

Info

Publication number
DE69630292D1
DE69630292D1 DE69630292T DE69630292T DE69630292D1 DE 69630292 D1 DE69630292 D1 DE 69630292D1 DE 69630292 T DE69630292 T DE 69630292T DE 69630292 T DE69630292 T DE 69630292T DE 69630292 D1 DE69630292 D1 DE 69630292D1
Authority
DE
Germany
Prior art keywords
production
integrated semiconductor
semiconductor arrangements
gas microsensor
chemoresistive gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69630292T
Other languages
English (en)
Inventor
Flavio Villa
Paolo Ferrari
Benedetto Vigna
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69630292D1 publication Critical patent/DE69630292D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
DE69630292T 1996-07-31 1996-07-31 Verfahren zur Herstellung von integrierten Halbleiteranordnungen mit chemoresistivem Gasmikrosensor Expired - Lifetime DE69630292D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96830436A EP0822578B1 (de) 1996-07-31 1996-07-31 Verfahren zur Herstellung von integrierten Halbleiteranordnungen mit chemoresistivem Gasmikrosensor

Publications (1)

Publication Number Publication Date
DE69630292D1 true DE69630292D1 (de) 2003-11-13

Family

ID=8225987

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69630292T Expired - Lifetime DE69630292D1 (de) 1996-07-31 1996-07-31 Verfahren zur Herstellung von integrierten Halbleiteranordnungen mit chemoresistivem Gasmikrosensor

Country Status (4)

Country Link
US (1) US5883009A (de)
EP (1) EP0822578B1 (de)
JP (1) JP4078413B2 (de)
DE (1) DE69630292D1 (de)

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US6121552A (en) 1997-06-13 2000-09-19 The Regents Of The University Of Caliofornia Microfabricated high aspect ratio device with an electrical isolation trench
US20060186438A1 (en) * 1997-12-19 2006-08-24 Vivactis N.V. Device for thermal sensing
US6545334B2 (en) 1997-12-19 2003-04-08 Imec Vzw Device and a method for thermal sensing
US6287885B1 (en) * 1998-05-08 2001-09-11 Denso Corporation Method for manufacturing semiconductor dynamic quantity sensor
DE69831075D1 (de) * 1998-10-21 2005-09-08 St Microelectronics Srl Herstellungsverfahren von integrierten Vorrichtungen, die Mikrostrukturen mit elektrischen schwebenden Zwischenverbindungen enthalten
US6218687B1 (en) * 1998-12-21 2001-04-17 General Atomics Smart microsensor arrays with silicon-on-insulator readouts for damage control
US6238085B1 (en) * 1998-12-31 2001-05-29 Honeywell International Inc. Differential thermal analysis sensor
DE19916798C2 (de) * 1999-04-14 2001-10-18 Daimler Chrysler Ag Dünnschicht-Halbleiter-Gassensor und Verfahren zum Nachweis von Gasen
US6193413B1 (en) * 1999-06-17 2001-02-27 David S. Lieberman System and method for an improved calorimeter for determining thermodynamic properties of chemical and biological reactions
US6265750B1 (en) 1999-07-15 2001-07-24 Teledyne Technologies Incorporated Electrochemical gas sensor and method of making the same
US7335965B2 (en) * 1999-08-25 2008-02-26 Micron Technology, Inc. Packaging of electronic chips with air-bridge structures
US6214719B1 (en) 1999-09-30 2001-04-10 Novellus Systems, Inc. Method of implementing air-gap technology for low capacitance ILD in the damascene scheme
US6677209B2 (en) * 2000-02-14 2004-01-13 Micron Technology, Inc. Low dielectric constant STI with SOI devices
US6890847B1 (en) * 2000-02-22 2005-05-10 Micron Technology, Inc. Polynorbornene foam insulation for integrated circuits
US6509623B2 (en) * 2000-06-15 2003-01-21 Newport Fab, Llc Microelectronic air-gap structures and methods of forming the same
US6580600B2 (en) 2001-02-20 2003-06-17 Nippon Soken, Inc. Capacitance type humidity sensor and manufacturing method of the same
US6828171B2 (en) * 2002-01-16 2004-12-07 Xerox Corporation Systems and methods for thermal isolation of a silicon structure
US20040084308A1 (en) * 2002-11-01 2004-05-06 Cole Barrett E. Gas sensor
JP4620687B2 (ja) * 2004-01-27 2011-01-26 エイチツースキャン コーポレイション ガスセンサの熱的分離のための方法と装置
DE112005000251B4 (de) * 2004-01-27 2016-03-10 H2Scan Corp. Isolierte Gassensoranordnung
ATE359496T1 (de) * 2004-07-02 2007-05-15 Vivactis Nv Messung der wärme erzeugt durch einen chemischen oder biologischen prozess.
US7664607B2 (en) 2005-10-04 2010-02-16 Teledyne Technologies Incorporated Pre-calibrated gas sensor
DE102006007040A1 (de) * 2006-02-15 2007-08-16 Austriamicrosystems Ag Bauelement mit integriertem Heizelement und Verfahren zum Beheizen eines Halbleiterkörpers
KR100777192B1 (ko) 2006-06-02 2007-11-16 호서대학교 산학협력단 가스센서용 마이크로 히터 제조방법 및 그에 의해 제조된마이크로히터
US20080273572A1 (en) * 2006-06-02 2008-11-06 James Madison University Thermal detector for chemical or biological agents
JP5297112B2 (ja) * 2008-08-04 2013-09-25 富士電機株式会社 薄膜ガスセンサ
US7927963B2 (en) * 2008-08-07 2011-04-19 International Business Machines Corporation Integrated circuit structure, design structure, and method having improved isolation and harmonics
US7804151B2 (en) * 2008-08-07 2010-09-28 International Business Machines Corporation Integrated circuit structure, design structure, and method having improved isolation and harmonics
US8274301B2 (en) * 2009-11-02 2012-09-25 International Business Machines Corporation On-chip accelerated failure indicator
JP5535610B2 (ja) * 2009-12-22 2014-07-02 三菱重工業株式会社 Ｓｏｉ半導体基板製造方法
TWI434037B (zh) 2010-12-03 2014-04-11 Ind Tech Res Inst 氣體感測器及其製造方法
US8354729B2 (en) 2010-12-27 2013-01-15 Industrial Technology Research Institute Gas sensor and manufacturing method thereof
EP2902109B1 (de) * 2011-09-23 2018-10-31 IMEC vzw Verfahren zur Herstellung einer Vorrichtung zur Wärmeisolierung von Mikroreaktoren
US10366883B2 (en) 2014-07-30 2019-07-30 Hewlett Packard Enterprise Development Lp Hybrid multilayer device
US10658177B2 (en) 2015-09-03 2020-05-19 Hewlett Packard Enterprise Development Lp Defect-free heterogeneous substrates
US10586847B2 (en) 2016-01-15 2020-03-10 Hewlett Packard Enterprise Development Lp Multilayer device
US11088244B2 (en) 2016-03-30 2021-08-10 Hewlett Packard Enterprise Development Lp Devices having substrates with selective airgap regions
US11391709B2 (en) 2016-08-18 2022-07-19 Carrier Corporation Isolated sensor and method of isolating a sensor
US10381801B1 (en) 2018-04-26 2019-08-13 Hewlett Packard Enterprise Development Lp Device including structure over airgap

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1216330A (en) * 1983-02-07 1987-01-06 Junji Manaka Low power gas detector
FI82774C (fi) * 1988-06-08 1991-04-10 Vaisala Oy Integrerad uppvaermbar sensor.
DE69028368T2 (de) * 1989-09-27 1997-03-27 Canon Kk Kamerasystem zur Wechselobjektsteuerung
CN1018844B (zh) * 1990-06-02 1992-10-28 中国科学院兰州化学物理研究所 防锈干膜润滑剂
US5203809A (en) * 1991-12-06 1993-04-20 Hans Oetiker Self-tightening clamp
FR2700003B1 (fr) * 1992-12-28 1995-02-10 Commissariat Energie Atomique Procédé de fabrication d'un capteur de pression utilisant la technologie silicium sur isolant et capteur obtenu.
CA2173612A1 (en) * 1993-10-08 1995-04-20 James Edward Van De Vyver A catalytic gas sensor
JP2560251B2 (ja) * 1994-03-18 1996-12-04 工業技術院長 シリコン単結晶自己支持薄膜の製造法
US5451371A (en) * 1994-06-09 1995-09-19 Ford Motor Company High-sensitivity, silicon-based, microcalorimetric gas sensor
US5622633A (en) * 1994-08-18 1997-04-22 Nippondenso Co., Ltd. Semiconductor sensor with suspended microstructure and method for fabricating same

Also Published As

Publication number Publication date
EP0822578A1 (de) 1998-02-04
JP4078413B2 (ja) 2008-04-23
US5883009A (en) 1999-03-16
JPH10148624A (ja) 1998-06-02
EP0822578B1 (de) 2003-10-08

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